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application and design manual for high performance rf products june 2012 rf manual 16 th edition

4 nxp semiconductors rf manual 16 th edition nxp's rf manual is one of the most important reference tools on the market for todays rf designers. it features our complete range of rf products, from low- to high-power signal conditioning, organized by application and function, and with a focus on design-in support. when it comes to rf, the first thing on the designer's mind is to meet the specified performance. nxp brings clarity to every aspect of your design challenge, so you can unleash the performance of your rf and microwave designs. nxp delivers a portfolio of high-performance rf technology that allows you to differentiate your product C no matter where in the rf world you are. thats why customers trust us with their mission-critical designs. whether its ldmos and gan for high-power rf applications or si and sige:c bicmos for your small-signal needs, weve got you covered. our broad portfolio of far-reaching technologies gives you the freedom to design with confidence. shipping more than four billion rf products annually, nxp is a clear industry leader in high performance rf. from satellite receivers, cellular base stations, and broadcast transmitters to ism (industrial, scientific, medical) and aerospace and defense applications, you will find the high performance rf products that will help you realize a clear advantage in your products, your reputation, and your business. so if you're looking to improve your rf performance, design a highly efficient signal chain, or break new ground with an innovative ism application, nxp will help you unleash the performance of your next-generation rf and microwave designs. nxp enables you to unleash the performance of next-generation rf and microwave designs
5 nxp semiconductors rf manual 16 th edition whats new? this rf manual provides updated information on rf applications that are grouped as follows: wireless and broadband communication infrastructure, tv and satellite, portable devices, automotive, ism, and aerospace and defense. we describe in detail the new developments in our core technologies, qubic4 (sige:c) and ldmos. we have also added gan technology to our product offering; this key technology lets high-power amplifiers deliver very high efficiency in next-generation wireless communication systems. new products include gan power amplifiers, a complete line of overmolded plastic (omp) rf power transistors and mmics, and our eighth generation ldmos transistors (gen8). next-generation devices and improved products include gps lnas, medium power amplifiers, if gain blocks, satellite lnb ics and catv modules. our portfolio for the wireless communication infrastructure has expanded, with a comprehensive set of amplifiers (low noise, variable gain, medium power, and high power doherty amplifiers), mixers, iq modulators and synthesizers, so you can build a highly efficient signal chain for transmit line-ups and receive chains. the design support section is updated and includes all available tools, documents, materials and links that ease the design-in of our products. rf manual web page www.nxp.com/rfmanual kind regards, john croteau sr. vice president & general manager business line high performance rf were relentless in our commitment to rf innovation, and have the infrastructure and insight to inspire confidence in your performance-critical applications. we bring focus to complex rf problems so you are free to push the performance limits of your application, realize your design vision, and gain a competitive edge for your enterprise. what you are reading is more than a guide, it's a tool that lets you unleash your rf performance: the 16 th edition of the rf manual.
6 nxp semiconductors rf manual 16 th edition contents 1 products by application 9 1.1 wireless communication infrastructure _______________________________________________________________________________________________________________________________________________________________ 9 1.1.1 base stations (all cellular standards and frequencies) ______________________________________________________________________________________________________________________________ 9 1.1.2 point-to-point communications ________________________________________________________________________________________________________________________________________________________________ 12 1.1.3 repeater ___________________________________________________________________________________________________________________________________________________________________________________________________ 14 1.2 broadband communication infrastructure _________________________________________________________________________________________________________________________________________________________ 15 1. 2.1 catv optical (optical node with multiple out-ports) ________________________________________________________________________________________________________________________________ 15 1.2.2 catv electrical (line extenders) ______________________________________________________________________________________________________________________________________________________________ 16 1.3 tv and satellite ____________________________________________________________________________________________________________________________________________________________________________________________________ 17 1.3.1 network interface module (nim) for tv reception ___________________________________________________________________________________________________________________________________ 17 1.3.2 basic tv tuner ___________________________________________________________________________________________________________________________________________________________________________________________ 19 1.3.3 satellite outdoor unit, twin low-noise block (lnb) with discrete components ______________________________________________________________________________________ 20 1.3.4 satellite outdoor unit, twin low-noise block (lnb) with integrated mixer / oscillator / downconverter __________________________________________________ 21 1.3.5 satellite multi-switch box - 4 x 4 (up to 16 x 16) / diseqc / smatv ________________________________________________________________________________________________________ 22 1.3.6 vsat ________________________________________________________________________________________________________________________________________________________________________________________________________ 23 1.4 portable devices _________________________________________________________________________________________________________________________________________________________________________________________________ 25 1.4.1 gps __________________________________________________________________________________________________________________________________________________________________________________________________________ 25 1.4.2 fm radio ________________________________ ________________________________________________________________________________________________ ___________________________________________________________________ 26 1.4.3 china mobile multimedia broadcasting (cmmb) in uhf band 470 C 862 mhz _______________________________________________________________________________________ 27 1.4.4 cellular receiver ________________________________________________________________________________________________________________________________________________________________________________________ 28 1.4.5 802.11n dbdc and 802.11ac wlan ________________________________________________________________________________________________________________________________________________________ 29 1.4.6 generic rf front-end _______________________________________________________________________________________________________________________________________________________________________________ 30 1.5 automotive __________________________________________________________________________________________________________________________________________________________________________________________________________ 31 1.5.1 sdars & hd radio ______________________________________________________________________________________________________________________________________________________________________________________ 31 1.5.2 remote keyless entry, rf generic front-end with dedicated antenna for reception and transmission ___________________________________________________ 32 1.5.3 tire pressure monitoring system _____________________________________________________________________________________________________________________________________________________________ 33 1.5.4 car radio receiver (crest ics: tef6860hl, tef6862hl) _______________________________________________________________________________________________________________________ 34 1.6 industrial, scientific & medical (ism) __________________________________________________________________________________________________________________________________________________________________ 35 1.6.1 broadcast / ism _______________________________________________________________________________________________________________________________________________________________________________________ 35 1.6.2 e-metering, rf generic front-end with a single antenna / zigbee ______________________________________________________________________________________________________________ 36 1.6.3 rf microwave furnace application ____________________________________________________________________________________________________________________________________________________________ 37 1.6.4 rf plasma lighting ___________________________________________________________________________________________________________________________________________________________________________________ 38 1.6.5 medical imaging _______________________________________________________________________________________________________________________________________________________________________________________ 39 1.7 aerospace and defense __________________________________________________________________________________________________________________________________________________________________________ 40 1.7.1 microwave products for l- and s-band radar and avionics applications ________________________________________________________________________________________________ 40 2 focus applications, products & technologies 42 2.1 wireless communication infrastructure _____________________________________________________________________________________________________________________________________________________________ 42 2.1.1 build a highly efficient signal chain with rf components for transmit line-ups and receive chains ________________________________________________________ 42 2.1. 2 digital wideband vgas with high linearity & flexible current settings ___________________________________________________________________________________________________ 44 2.1.3 doherty amplifier technology for state-of-the-art wireless infrastructure ______________________________________________________________________________________________ 46 2.1.4 the new generation of ldmos rf power for wireless infrastructures: nxp's gen8 _____________________________________________________________________________ 48 2.2 broadband communication infrastructure ________________________________________________________________________________________________________________________________________________________ 49 2.2.1 connecting people, protecting your network : nxp's catv c-family for the chinese sarft standard _________________________________________________ 49 2.2.2 highly efficient line-up of 1 ghz gaas modules for sustainable catv networks ___________________________________________________________________________________ 52 2.3 tv and satellite ___________________________________________________________________________________________________________________________________________________________________________________________________ 54 2. 3.1 lnas with programmable gain & bypass option for improved tuner performance _______________________________________________________________________________ 54 2.3.2 complete satellite portfolio for all lnb architectures _____________________________________________________________________________________________________________________________ 56 2.3.3 vsat, 2-way communication via satellite _________________________________________________________________________________________________________________________________________________ 58 2.3.4 low noise lo generators for microwave & mmwave radios ___________________________________________________________________________________________________________________ 60 2.4 portable devices __________________________________________________________________________________________________________________________________________________________________________________________________ 61 2. 4.1 the best reception of gnss signals with the smallest footprint ______________________________________________________________________________________________________________ 61 2.5 industrial, scientific & medical ___________________________________________________________________________________________________________________________________________________________________________ 63 2. 5.1 medical applications driven by rf power ________________________________________________________________________________________________________________________________________________ 63 2.5.2 rf-driven plasma lighting ________________________________________________________________________________________________________________________________________________________________________ 64 2.5.3 qubic4 si and sige:c transistors for any rf function ____________________________________________________________________________________________________________________________ 65 2.5.4 building on decades of innovation in microwave and radar ___________________________________________________________________________________________________________________ 66 2.5.5 digital broadcasting at its best _______________________________________________________________________________________________________________________________________________________________ 68 2.5.6 setting the benchmark for ultra low-power and high-performance wireless connectivity solutions ______________________________________________________ 69 2.6 technology __________________________________________________________________________________________________________________________________________________________________________________________________________ 70 2. 6.1 the first mainstream semiconductor company to offer gan products ___________________________________________________________________________________________________ 70
7 nxp semiconductors rf manual 16 th edition 2.6.2 completing nxp's rf power transistor offering: products in plastic packages (omp) ___________________________________________________________________________ 71 2.6.3 looking for a leader in sige:c? you just found us! ____ ______________________________________________________________________________________________________________________________ 72 2.6.4 high-performance, small-size packaging enabled by nxp's leadless package platform and wl-csp technology ________________________________ 74 3 products by function 75 3.1 new products ______________________________________________________________________________________________________________________________________________________________________________________________________ 75 3.2 rf diodes ____________________________________________________________________________________________________________________ 78 3. 2.1 varicap diodes _________________________________________________________________________________________________________________________________________________________________________________________ 78 3.2.2 pin diodes _______________________________________________________________________________________________________________________________________________________________________________________________ 79 3.2.3 band-switch diodes __________________________________________________________________________________________________________________________________________________________________________________ 81 3.2.4 schottky diodes ________________________________________________________________________________________________________________________________________________________________________________________ 81 3.3 rf bipolar transistors ________________________________________________________________________________________________________________________________________________________________________________________ 82 3.3.1 wideband transistors ______________________________________________________________________________________________________________________________________________________________________________ 82 3.4 rf ics _________________________________________________________________________________________________________________________________________________________________________________________________________________ 85 3.4.1 rf mmic amplifiers and mixers _______________________________________________________________________________________________________________________________________________________________ 85 3.4.2 wireless infrastructures ics _____________________________________________________________________________________________________________________________________________________________________ 88 3.4.3 satellite lnb rf ics _________________________________________________________________________________________________________________________________________________________________________________ 89 3.4.4 low-noise lo generators for vsat and general microwave applications ______________________________________________________________________________________________ 89 3.5 rf mos transistors ______ __________________________________________________________________________________________________________________________ ____________________________________________________________ 90 3.5.1 jfets _________________________________________________________________________________ ______________________________________________________________________________________________________________________ 90 3.5.2 mosfets __________________________________________________________________________________________________________________________________________________________________________________________________ 91 3.6 rf modules ________________________________________________________________________________________________________________________________________________________________________________________________________ 93 3.6.1 catv push-pulls ______________________________________________________________________________________________________________________________________________________________________________________ 93 3.6.2 catv push-pulls 1 ghz ____________________________________________________________________________________________________________________________________________________________________________ 93 3.6.3 catv power doublers ______________________________________________________________________________________________________________________________________________________________________________ 94 3.6.4 catv optical receivers _____________________________________________________________________________________________________________________________________________________________________________ 94 3.6.5 catv reverse hybrids _______________________________________________________________________________________________________________________________________________________________________________ 94 3.7 rf power transistors __________________________________________________________________________________________________________________________________________________________________________________________ 95 3 .7.1 rf power transistors for base stations ____ ____________________________________________________________________________________________________________________________ ____________________ 95 3 .7. 2 rf power transistors for broadcast / ism applications ____________________________________________________________________________________________________________________________ 99 3 .7. 3 rf power transistors for aerospace and defense __________________________________________________________________________________________________________________________________ 100 3 .7. 4 gallium nitride (gan) rf power amplifiers ____________________________________________________________________________________________________________________________________________ 101 3.8 wireless microcontroller chipsets and modules ______________________________________________________________________________________________________________________________________________ 101 4 design support 102 4.1 knowing nxps rf portfolio _____________________________________________________________________________________________________________________________________________________________________________ 102 4.2 product selection on nxp.com _________________________________________________________________________________________________________________________________________________________________________ 102 4.3 product evaluation ____________________________________________________________________________________________________________________________________________________________________________________________ 102 4.4 additional design-in support ____________________________________________________________________________________________________________________________________________________________________________ 103 4.5 application notes ______________________________________________________________________________________________________________________________________________________________________________________________ 103 4.6 simulation models _____________________________________________________________________________________________________________________________________________________________________________________________ 104 4.6.1 simulation models for rf power devices ____ ____________________________________________________________________________________________________________________________ _______________ 104 4.6.2 simulation models for rf bipolar wideband transistors _________________________________________________________________________________________________________________________ 105 4.6.3 simulation models for rf mosfet transistors _______________________________________________________________________________________________________________________________________ 106 4.6.4 simulation models for rf varicap diodes _______________________________________________________________________________________________________________________________________________ 106 4.6.5 simulation models for rf mmic amplifiers ____________________________________________________________________________________________________________________________________________ 107 5 cross-references & replacements _______________________________________________________ 108 5.1 cross-references: manufacturer types versus nxp types ______________________________________________________________________________________________________________________________ 108 5.2 cross-references: nxp discontinued types versus nxp replacement types __________________________________________________________________________________________________ 117 6 packing quantities per package with relevant ordering code _____________________________ 119 6.1 packing quantities per package with relevant ordering code _________________________________________________________________________________________________________________________ 119 6.2 marking codes ___________________________________________________________________________________________________________________________________________________________________________________________________ 122 7 abbreviations _________________________________________________________________________ 124 8 contacts and web links ________________________________________________________________ 125 9 product index _________________________________________________________________________ 126
8 nxp semiconductors rf manual 16 th edition
9 nxp semiconductors rf manual 16 th edition products by application 1. products by application 1.1 wireless communication infrastructure the block diagram above shows transmit (upper part, tx) and receive (lower part, rx) functions of a base station, and includes the tx feedback function (middle part, tx feedback). the signals generated in the "digital baseband & control" block follow the requirements of the air-interface standard. these signals are interfaced to the dac via serial interface ser. the ser can use the lvds or jedec standard. after the signals are fed to the i-dac and q-dac, they are converted to the analog domain. before the i and q signals enter the iq modulator, they are first low-pass filtered to remove any aliasing signals. at the iq modulator, the signals are up-converted to rf using an lo signal coming from the pll/vco device, typically called the lo generator. due to device aging and variation in cell load, the up-converted signals are fed to the vga to control the power level. an additional band-pass filter is needed to remove the out-of-band spurs. the clean signal is fed to the rf power board, where the desired transmit power is made. finally, the rf power signal is fed to the antenna via a duplexer. directly after the final-stage amplifier, a signal coupler picks up a certain amount of the rf signal, which is attenuated and then down-mixed using the if mixer. this signal is called the observation signal, and is used to derive coefficients for the digital pre-distortion algorithm. since power levels vary, the observation is first fed to the vga to control the power level, and after band-pass filtering, the signal is converted to the digital domain using an adc. the same serial interface is used to send the digital signals to the baseband processor. at the receiver, the received signal directly after the duplexer is fed to the lna for direct amplification, since the received signal level is quite low. if the first lna is mounted in the tower top, a long rf cable is used to interface the rf signals with a base transceiver station (bts). a second lna is used to amplify the received signals. band-pass filtering is applied to reduce the out-of-band signals levels before these signals are applied to the if mixer. signal levels that change dramatically require a vga to maintain the full scale ranges of the i-adc and q-adc for optimal conversion performance. low-pass filtering is used before the adc to remove the aliasing signals. these digital signals are interfaced to the baseband using a serial interface such as jedec. the sample clocks and lo signals are derived from clock cleaners and plls respectively. this is denoted as clock and pll / vco in the block diagram. this set-up is required to make a synchronized system. typically denoted in snrs, and in order to improve reception quality, the receive function is equipped with a second receiver, called a diversity receiver. adc pll vco dvga att. lo dual dvga transmitter dual dac dual mixer 0 90 pll vco lna bp or lp if-saw rf-saw mpa hpa dual adc jedec if jedec interface jedec interface iq-modulator i q rf-bp if-saw power amplifier rx2 tx / rx1 digital front end dpd cfr duc ddc micro controller clock generator jitter cleaner obsai / cpri digital baseband tower - mounted amplifier c duplexer filter unit lna +vga (jedec) interface dvga mixer+lo data converter rf small signal rf power lna+vga tx rx 1.1.1 base stations (all cellular standards and frequencies) see also brochure: 'your partner in mobile communication infrastructure design', nxp document number 9397 750 16837. application diagram
10 nxp semiconductors rf manual 16 th edition product highlight: blf8g10ls -160 160 w ldmos power transistor for base w-cdma base station and multi-carrier applications at frequencies from 920 to 960 mhz. features ` excellent ruggedness ` high efficiency ` low r th providing excellent thermal stability ` designed for broadband operation (920 to 960 mhz) ` lower output capacitance for improved performance in doherty applications ` low memory effects for excellent pre-distortability ` internally matched for ease of use ` integrated esd protection ` compliant to restriction of hazardous substances (rohs) directive 2002/95/ec recommended products function product f min (mhz) f max (mhz) p1db (w) matching package type hpa driver 700 2200 10 - sot1179 blp7g22-10* driver/final 2110 2170 40 i/o sot1121 blf6g22l(s)-40p 2500 2700 40 i/o sot1121 blf6g27l(s)-40p mmic 2000 2200 60 i/o sot1212 blm7g22s-60pb(g)* final 700 1000 160 - sot4 67 blf6h10l(s)-160 700 1000 200 i/o sot1244c blf8g10ls-200gv 700 1000 270 i/o sot1244c blf8g10ls-270gv 850 960 300 i/o sot539 blf8g10l(s)-300p* 900 1000 140 o sot1224 blp7g09s-140p(g)* 920 960 160 i/o sot502 blf8g10l(s)-160* 920 960 250 i/o sot502 blf7g10l(s)-250 1800 1900 260 i/o sot539b blf7g20ls-260a* 1805 1880 250 i/o sot539 blf7g20l(s)-250p 2000 2200 160 i/o sot502b blf7g22l(s)-160* 2000 2200 200 i/o sot1244c blf8g22ls-200gv* 2000 2200 270 i/o sot1244c blf8g22ls-270gv* 2500 2700 100 i/o sot502 blf7g27l(s)-100 2500 2700 140 i/o sot502 blf7g27l(s)-140 3400 3600 100 i/o sot502 blf6g38(ls)-100 integrated doherty 2010 2025 50 o sot113 0 bld6g21l(s)-50 * check status in section 3.1, as this type is not yet released for mass production
11 nxp semiconductors rf manual 16 th edition products by application product highlight: digital vgas bga7204 & bga7210 these 6-bit digital vgas offer high linearity (35 dbm @ 2.2-2.8 ghz) and high output power (23 dbm @ 2.2-2.8 ghz) across a large bandwidth without external matching. smart routing with no connection crosses simplifies design and decreases footprint by 25%. the unique power-save mode can effectively reduce the current consumption in tdd systems up to 45%. the bga7210 adds flexible current distribution across its two amplifiers, depending on the attenuation state, to save current. features ` internally matched for 50 - bga7204 = 0.4 to 2.75 ghz - bga7210 = 0.7 to 3.8 ghz ` high maximum power gain - bga7204 = 18.5 db - bga7210 = 30 db ` high output third-order intercept, ip3 o - bga7204 = 38 db - bga7210 = 39 db ` attenuation range of 31.5 db, 0.5 db step size (6 bit) ` fast switching power-save mode (power-down pin) ` digitally controlled current setting from 120 to 195 ma with an optimum at 185ma (bga7210 only) ` simple control interfaces (spi) ` esd protection on all pins (hbm 4 kv; cdm 2 kv) function product package type discrete attenuator rf diode pin diode sot753 bap64q sot753 bap70q various bap64^ function product package type lna (low noise amplifier) rf transistor sige:c transistor sot343f bfu725f/n1 bfu690f bfu730f bfu760f bfu790f mmic sige:c mmic sot650 bgu7051 bgu7052 bgu7053 sot1301 bgu7060 bgu7061 bgu7062 bgu7063 function product gain range package type single vga (variable-gain amplifier) mmic 31 db sot617 bga7210 bga7204 function product gain range package type dual vga (variable-gain amplifier) mmic 24 db sot617 bga7350 28 db bga7351 function product p l (1db) @ 940 mhz package type mpa (medium power amplifier) mmic 24 dbm sot89 bga7024 28 dbm bga7027 25 dbm sot908 bga7124 28 dbm bga7127 30 dbm bga7130 function product frequency package type dual mixer mmic 0.7 - 1.2 ghz sot1092 bgx7220 1.7 -2.7 ghz bgx7221 function product noise package type pll + vco (lo generator) mmic 131 dbc/hz @ 1 mhz offset @ 5.3 ghz sot617 bgx7300* function product output power package type iq modulator mmic 0 dbm sot616 bgx7100 4 dbm bgx7101 * check status in section 3.1, as this type is not yet released for mass production for mass production ^ sod523, sod323, sot23 & sot323
12 nxp semiconductors rf manual 16 th edition 1.1.2 point-to-point communications application diagram brb406 indoor unit outdoor unit ref ref to/from idu lna vga if mpa buf pmu pmu mpx pll vco mpx lpf bpf antenna data interface analog vga 0 90 power supply digital signal processor lna lna vga vga vga vga synth pll pll if mpa pa pll vco 0 90 recommended products indoor unit function product gain range package type single vga (variable-gain amplifier) mmic 23 db sot617 bga7202 31 db bga7204 function product gain range package type dual vga (variable-gain amplifier) mmic 24 db sot617 bga7350 28 db bga7351 function product p l (1db) @ 940 mhz package type mpa (medium power amplifier) mmic 24 dbm sot89 bga7024 28 dbm bga7027 25 dbm sot908 bga7124 28 dbm bga7127 30 dbm bga7130 function product output power package type iq modulator mmic 0 dbm sot616 bgx7100 4 dbm bgx7101 function product package type if if gain block mmic sot363 bga2800 bga2801 bga2815 bga2816 mmic general- purpose wideband amplifiers bgm1012 bga2714 bga2748 bga2771 function product package type lna rf mmic sige:c mmic sot891 bgu7003 sot650 bgu7051 bgu7052 bgu7053 sot1301 bgu7060 bgu7061 bgu7062 bgu7063 rf transistor sige:c transistor sot343f bfu725f/n1 bfu710f bfu730f wideband transistor sot343r bfg425w bfg424w sot143r bfg325/xr
13 nxp semiconductors rf manual 16 th edition products by application outdoor unit function product gain range package type single vga (variable- gain amplifier) mmic 31 db sot617 bga7210 bga7204 function product p l (1db) @ 940 mhz package type mpa (medium power amplifier) mmic 24 dbm sot89 bga7024 28 dbm bga7027 25 dbm sot908 bga7124 28 dbm bga7127 30 dbm bga7130 function product package type buffer rf transistor sige:c transistor sot343f bfu725f/n1 bfu730f bfu760f bfu790f function product package type lna rf transistor sige:c transistor sot343f bfu725f/n1 bfu730f bfu760f bfu790f function product package type if if gain block mmic sot363 bga2800 bga2801 bga2815 bga2816 bga2850 bga2865 bga2866 mmic general- purpose wideband amplifiers bgm1014 bgm1013 bgm1012 bga2714 function product gain range package type dual vga (variable- gain amplifier) mmic 24 db sot617 bga7350 28 db bga7351 function product noise package type pll + vco (lo generator) mmic -131 dbc/hz @ 1 mhz offset @ 5.3 ghz sot617 bgx7300* function product package type oscillator rf transistor wideband transistor sot343r bfg424w bfg425w sige:c transistor sot343f bfu725f/n1 bfu730f bfu760f bfu790f * check status in section 3.1, as this type is not yet released for mass production product highlight: bga7350 mmic variable-gain amplifier the bga7350 mmic is a dual independent digitally controlled if variable-gain amplifier (vga) operating from 50 to 250 mhz. each if vga amplifies with a gain range of 24 db and, at its maximum gain setting, delivers 17 dbm output power at 1 db gain compression with superior linear performance. the bga7350 is optimized for a differential gain error of less than 0.1 db for accurate gain control and has a total integrated gain error of less than 0.4 db. it is housed in a 32-pin leadless hvqfn package (5 x 5 mm). features ` dual independent digitally controlled 24 db gain range vgas, with 5-bit control interface ` 50 to 250 mhz frequency operating range ` gain step size: 1 db 0.1 db ` 18.5 db power gain ` fast gain stage switching capability ` 17 dbm output power at 1 db gain compression ` 5 v single supply operation with power-down control ` logic-level shutdown control pin reduces supply current ` esd protection at all pins ` unconditionally stable nxp bts tx component demonstrator board
14 nxp semiconductors rf manual 16 th edition 1.1.3 repeater application diagram recommended products product highlight: bgx7221 mmic dual down-mixer the bgx7221 combines a pair of high performance, high linearity down-mixers for use in receivers that have a common local oscillator used with, for example, main and diversity paths. the device covers frequency bands from 1700 to 2700 mhz with an extremely flat behavior. features ` 8.5 db conversion gain over all bands ` 13 dbm input, 1 db compression point ` 25.5 dbm input third-order intercept point ` 10 db (typ) small signal noise figure ` integrated active biasing ` single +5 v supply operation ` power-down per mixer with hardware control pins ` low bias current in power-down mode ` matched 50 single-ended rf and lo input impedances ` esd protection at all pins brb631 i-dac q-dac pa tx0 lpf lpf lpf lpf rf saw rf saw pa vga vga tx1 rx0 rx1 dual mixer dual dac pll vco lo signal clock recovery jitter cleaner ddc/ duc filtering mixer mixer adc adc dual adc dual vga dual mixer mixer mixer lna lna lna function product p l (1 db) @ 940 mhz package type 4m0 fbuhoybpg kudppbgcoioude mmic 24 dbm sot89 bga7024 28 dbm bga7027 25 dbm sot908 bga7124 28 dbm bga7127 30 dbm bga7130 function product gain range package type nypcpl(0p fbpdop)cu@gpoappbgcoioude mmic 24 db sot617 bga7350 28 db bga7351 function product frequency range package type nypcpbozud mmic 1.7 - 2.7 ghz sot1092 bgx7220 0.7 - 1.2 ghz bgx7221 function product package type 1.0 sige:c mmic sot650 bgu7051 bgu7052 bgu7053 sot1301 bgu7060 bgu7061 bgu7062 bgu7063 function product noise package type m11pqplnop f1opguaudpl dep mmic -131 dbc/hz @ 1 mhz offset @ 5.3 ghz sot617 bgx7300* * check status in section 3.1, as this type is not yet released for mass production function product f min (mhz) f max (mhz) p1db (w) matching package type wm0 driver 700 2200 10 - sot1179 blp7g22-10* 2300 2700 10 i sot975 blf6g27-10(g) driver/final 700 1000 45 i sot608 blf6g10(s)-45 1450 1550 40 i/o sot1135 blf6g15l(s)-40rn 1800 2000 45 i/o sot608 blf6g20(s)-45 2110 2170 40 i/o sot1121 blf6g22l(s)-40p 2500 2700 40 i/o sot1121 blf6g27l(s)-40p 3400 3800 50 i/o sot502 blf6g38(ls)-50 integrated doherty 2010 2025 50 o sot113 0 bld6g21l(s)-50 2110 2170 50 i/o sot113 0 bld6g22l(s)-50
15 nxp semiconductors rf manual 16 th edition products by application 1.2.1 catv optical (optical node with multiple out-ports) application diagram bra852 coax out port 1 rf pre- amplifier splitter duplex filter rf power amplifier rf forward receiver fiber in coax out port 2 coax out port 3 coax out port 4 recommended products function product frequency package type rf forward receiver forward path receiver 870 mhz sot115 bgo807c sot115 bgo807ce function product frequency gain (db) type rf pre-amplifier power doubler 870 mhz 18.2 - 18.8 bgd812 push-pulls 870 mhz 18 - 19 bgy885a 21 - 22 bgy887 1 ghz 23 - 24.5 cgy1043 27 - 28.5 cgy1047 function product frequency gain (db) type rf power amplifier power doublers 870 mhz 22 - 24 cgd942c 24 - 26 cgd944c 1 ghz 22 - 23.5 cgd1042hi 26.5 - 28 cgd1046hi product highlight: bgo807ce optical receiver the bgo807ce is an integrated optical receiver module that provides high output levels and includes an integrated temperature- compensated circuitry. in your optical node design, bgo807ce enables a high performance/ price ratio and ruggedness. when upgrading an hfc network from analog to digital, our bgo807ce is the perfect fit. features ` excellent linearity ` low noise ` excellent flatness ` standard catv outline ` rugged construction ` gold metallization ensures excellent reliability ` high optical input power range 1.2 broadband communication infrastructure
16 nxp semiconductors rf manual 16 th edition 1.2.2 catv electrical (line extenders) application diagram duplex filter duplex filter rf pre- amplifier rf power amplifier rf reverse amplifier coax in coax out bra505 recommended products function product frequency gain (db) type rf pre-amplifier push-pulls 550 mhz 33.5 - 35.5 bgy588c 750 mhz 33.2 - 35.2 bge788c 18 - 19 bgy785a 21 - 22 bgy787 870 mhz 18 - 19 bgy885a 21 - 22 bgy887 33.5 - 34.5 bgy888 34.5 - 36.5 cgy888c 1003 mhz 18 - 19 bgy1085a 21 - 22.5 cgy1041 23 - 24.5 cgy1043 27 - 28.5 cgy1047 29 - 31 cgy1049 32 - 34 cgy1032 function product frequency gain (db) type rf reverse amplifier reverse hybrids 5-75 mhz 29.2 - 30.8 bgy68 5-120 mhz 24.5 - 25.5 bgy66b 5-200 mhz 23.5 - 24.5 bgy67a all available in sot115 package function product frequency gain (db) type rf power amplifier power doublers 750 mhz 18.2 - 18.8 bgd712 18.2 - 18.8 bgd712c 20 - 20.6 bgd714 870 mhz 18.2 - 18.8 bgd812 19.7 - 20.3 bgd814 22 - 23 cgd942c 24 - 26 cgd944c 1003 mhz 22 - 24 cgd1042h 24 - 26 cgd1044h 19.5 - 22 cgd1040hi 22 - 23.5 cgd1042hi 23.5 - 25.5 cgd1044hi 26 - 28 cgd1046hi 22 - 24 cgd982hci 23.5 - 25.5 cgd985hci 26 - 28 cgd987hci product highlight: cgd1046hi capable of supporting high output power, the cgd1046hi is primarily designed for use in fiber deep-optical-node applications (n+1/2/3). this 1 ghz hybrid amplifier solution offers an extended temperature range, high-power overstress capabilities in case of surges, and high esd levels. the result is a low cost of ownership, with durability and superior ruggedness. features ` high output power ` high power gain for power doublers ` extremely low noise ` dark green products ` gaas hfet dies for high-end applications ` rugged construction ` superior levels of esd protection ` integrated ringwave protection ` design optimized for digital channel loading ` temperature-compensated gain response ` optimized heat management ` excellent temperature resistance
17 nxp semiconductors rf manual 16 th edition products by application 1.3.1 network interface module (nim) for tv reception application diagram brb403 rf input rf sw vga wb lna surge rf output conventional tuner or silicon tuner 1.3 tv and satellite looking for more information on our wideband lnas supporting multi-tuner applications in tvs, dvr/pvrs, and stbs? see section 2.3.1 lnas with programmable gain & bypass option for improved tuner performance. recommended products function product v cc (v) gain (db) package type lna mmic 5 10 sot363 bgu7031 5 10 sot363 bgu7032 -2 5 10 sot363 bgu7033 5 -2 3.3 10 sot363 bgu7041 3.3 10 sot363 bgu7042 -2 3.3 14 sot363 bgu7044 3.3 14 sot363 bgu7045 -2 product highlight: make a high-performance active splitter in a nim tuner with the bgu703x/ bgu704x today's tv tuners require complicated signal handling and benefit from flexibility in design. the front-end of a tv signal receiver is no longer just a tuned receiver, but has evolved into an rf network interface module (nim) with tuned demodulators, active splitters, and remodulators. the active splitter requires an lna with excellent linearity. nxp has developed two new series of lna/vga mmics (bgu703x/bgu704x), designed especially for high linearity (p3o of 29 dbm) in low-noise applications such as an active splitter in a nim tuner. the bgu703x family operates at a supply voltage of 5 v and is intended for use with normal can tuners. the bgu704x family operates at 3.3 v and works seamlessly with our si tuner ics, which also operate at 3.3 v.
18 nxp semiconductors rf manual 16 th edition recommended products product highlight: save energy with the bf11x8 the bf11x8 series are small-signal, rf-switching mosfets that can be used to switch rf signals up to 1 ghz. using the bf11x8 series as an rf switch saves a considerable amount of energy. when a recording device (dvd-r, hdd-r, vcr, dvr) is powered off, viewers can still watch tv, although the antenna is looped via the recording device. without the bf11x8, the antenna signal is lost. when power to the recording device is on, the bf11x8 is open, so the rf signal travels via the recording device to the tv tuner. when power to the recording device is off, the bf11x8 closes. this ensures that the rf signal is looped through directly to the tv tuner and guarantees tv reception. this saves energy because the recording device can be powered off. function product package type rf switch / plt switch mosfet 5 v silicon rf switch sot23 bf1107 sot143b bf110 8 sot143r bf110 8r sot343 bf110 8w sot343r bf110 8wr 3.3 v silicon rf switch sot143b bf1118 sot143r bf1118r sot343 bf1118w sot343r bf1118wr function product package type agc control amplifier mosfet 2-in-1 with band switch @ 5 v sot363 bf1215 2-in-1 @ 5 v sot363 bf1216 5 v sot343 bf1217 note: given that there is now an lna before the mosfet, the gain of these mosfets is made slightly lower and the cross-modulation somewhat higher. that way, the mosfet is not under agc even under nominal rf input level. bgu703x evaluation board
19 nxp semiconductors rf manual 16 th edition products by application 1.3.2 basic tv tuner application diagram bra500 rf input mosfet v agc from antenna, cable, active splitter, etc. mopll ic if recommended products function product package type input filter varicap diode vhf low sod323 bb152 sod523 bb182 vhf high sod323 bb153 sod523 bb178 sod523 bb187 sod882d bb178l x sod882d bb187lx uhf sod323 bb149a sod882d bb179l x sod523 bb179 sod523 bb189 function product package type rf pre-amplifier mosfet 5 v sot143 bf1201 sot143 bf1202 sot143 bf1105 sot143 bf1211 sot143 bf1212 2-in-1 @ 5 v sot363 bf1102r sot363 bf1203 sot363 bf1204 sot363 bf1206 sot363 bf1207 sot666 bf1208 sot666 bf1208d sot363 bf1210 sot363 bf1214 sot363 bf1218 v function product package type bandpass filter varicap diode vhf low sod323 bb152 sod523 bb182 vhf high sod323 bb153 sod882d bb178l x sod523 bb178 sod882d bb187lx sod523 bb187 uhf sod323 bb149a sod882d bb179l x sod523 bb179 sod523 bb189 function product package type oscillator varicap diode vhf low sod323 bb152 sod523 bb182 vhf high sod323 bb153 sod882d bb178l x sod523 bb178 sod882d bb187lx sod523 bb187 uhf sod323 bb149a sod882d bb179l x sod523 bb179 sod523 bb189 function product package type rf pre-amplifier mosfet 2-in-1 with band switch @ 5 v sot363 bf1215 2-in-1 @ 5 v sot363 bf1216 5 v sot343 bf1217 product highlight: bgu7045 1 ghz wideband low-noise amplifier with bypass the bgu7045 mmic is a 3.3 v wideband amplifier with bypass mode. it is designed specifically for high-linearity, low-noise applications over a frequency range of 40 mhz to 1 ghz. it is especially suited to set-top box applications. the lna is housed in a 6-pin sot363 plastic smd package. features ` internally biased ` noise figure of 2.8 db ` high linearity with an ip3 o of 29 dbm ` 75 ? input and output impedance ` power-down during bypass mode ` bypass mode current consumption < 5 ma ` esd protection > 2 kv hbm and >1.5 kv cdm on all pins function product package type bandswitching bandswitch diode sod523 ba277 sod523 ba891 sod523 ba591
20 nxp semiconductors rf manual 16 th edition product highlight: bga28xx-family of if gain blocks the bga28xx if gain blocks are silicon monolitic microwave integrated circuit (mmic) wideband amplifiers with internal matching circuitry in a 6-pin sot363 plastic smd package. features ` no output inductor necessary when used at the output stage ` internally matched to 50 ` reverse isolation > 30 db up to 2 ghz ` good linearity with low second- and third-order products ` unconditionally stable (k > 1) 1.3.3 satellite outdoor unit, twin low-noise block (lnb) with discrete components application diagram horizontal antenna brb022 h low if out 1 low 3 rd stage lna (4 x 2) if switch oscillator vertical antenna 2 nd stage lna 1 st stage lna 3 rd stage lna 2 nd stage lna 1 st stage lna bias ic if amplifier if amplifier if out 2 if amplifier v low if amplifier h high high oscillator if amplifier v high if amplifier bias ic mixer mixer mixer mixer recommended products function product package type 2 nd & 3 rd stage lna rf transistor sige:c transistor sot343f bfu710f bfu730f function product package type oscillator rf bipolar transistor wideband transistor sot343 bfg424w sot343f bfg424f rf transistor sige:c transistor sot343f bfu660f bfu710f bfu730f function product package type if switch rf diode pin diode various bap64^ various bap51^ various bap1321^ various bap50^ various bap63^ function product package type 1 st stage if amplifier mmic if gain block sot363 bga2800 sot363 bga2801 sot363 bga2802 sot363 bga2803 sot363 bga2815 sot363 bga2816 sot363 bga2817 sot363 bga2818 sot363 bga2850 sot363 bga2851 sot363 bga2866 rf bipolar transistor wideband transistor sot343 bfg424w sot343f bfg424f ^ also available in ultra-small leadless package sod882d function product package type output stage if amplifier mmic if gain block sot363 bga2800 sot363 bga2801 sot363 bga2815 sot363 bga2816 sot363 bga2818 sot363 bga2850 sot363 bga2865 sot363 bga2866 sot363 bga2867 sot363 bga2870 sot363 bga2874 sot363 bgm1014 rf bipolar transistor wideband transistor sot343 bfg325 2 nd stage lna rf transistor sige:c sot343f bfu710f bfu730f function product package type mixer rf transistor sige:c transistor sot343f bfu710f bfu730f looking for fully integrated mixer / oscillator / downconverter for universal single lnb? see section 2.3.2 complete satellite portfolio for all lnb architectures
21 nxp semiconductors rf manual 16 th edition products by application recommended products function product package type 2 nd & 3 rd stage lna rf transistor sige:c transistor sot343f bfu710f bfu730f function product package type mixer/ oscillator/ downconverter rf ic sot763 tff1014hn product highlight: industrys lowest-power integrated ku-band downconverters these universal dvb-s compliant ku-band downconverters consume about 50% less current (52 ma) than other integrated solutions. they are fully integrated (pll synthesizer/mixer/if gain block) and rf tested C which results in significantly decreased manufacturing time. stability of the local oscillator is guaranteed, which improves overall system reliability over temperature and time, and eliminates the need for manual alignment in production. features ` ultra-low current consumption (i cc = 52 ma) ` low phase noise (1.5 rms typ) ` integration bandwidth from 10 khz to 13 mhz ` small pcb footprint - dhvqfn16 package (2.5 x 3.5 x 0.85 mm) - only 7 external components - no inductors necessary 1.3.4 satellite outdoor unit, twin low-noise block (lnb) with integrated mixer / oscillator / downconverter application diagram aaa-002896 lna1 splitter splitter combiner combiner h v lna2 3 lna3 lna3 lna3 shared crystal lna3 h/v detect bpf tff1014 switched to low-band bpf lna1 lna2 22 khz tone detect tff1014 switched to high-band if out 1 if out 2
22 nxp semiconductors rf manual 16 th edition 1.3.5 satellite multi-switch box - 4 x 4 (up to 16 x 16) / diseqc / smatv application diagram brb023 output amplifiers input amplifiers lnb input amplifier terrestrial satellite dishe(s) terrestrial input coax out to stb coax out to stb coax out to stb coax out to stb switch matrix for 4 4, needs 16 (single) pin diodes recommended products function product package type input amplifier terrestrial mmic general purpose medium power amplifier sot89 bga6289 bga6489 bga6589 bga7024 sot908 bga7124 function product package type input amplifier lnb mmic general purpose amplifier sot363 bga2771 sot363 bga2866 sot363 bga2867 sot363 bga2818 rf bipolar transistor wideband transistor sot343 bfg325 sot343 bfg425w sot143 bfg520 sot143 bfg540 sige:c transistor sot343f bfu660f bfu725f/n1 bfu730f function product package type switch matrix rf diode pin diode various bap50^ bap51^ bap63^ bap64^ bap70^ bap1321^ rf transistor sige:c transistor sot343f bfu725f/n1 bfu730f ^ also available in ultra-small leadless package sod882d function product package type output amplifier mmic general purpose medium power amplifier sot89 bga6289 bga6489 bga6589 bga7024 sot908 bga7124 general purpose amplifier sot363 bgm1011 sot363 bga2869 rf bipolar transistor wideband transistor sot223 bfg135 sot223 bfg 591 sot223 bfg198 sot143 bfg540 sige:c transistor sot343f bfu725f/n1 bfu730f product highlight: pin diodes for switching matrix in addition to delivering outstanding rf performance, this component simplifies design-in because of its extremely low forward resistance, diode capacitance, and series inductance. significant board space is saved by supplying a range of highly compact package options, including sod523, sod323 and leadless sod882d. features ` high isolation, low distortion, low insertion loss ` low forward resistance (rd) and diode capacitance (cd) ` ultra-small package options
23 nxp semiconductors rf manual 16 th edition products by application 1.3.6 vsat application diagram brb405 indoor unit outdoor unit ref ref antenna to/from idu lna if if2 if1 buf buf pmu pmu mpx mpx omt mod demod da ta interface power supply digital signal processor lna2 pa lna1 if1 synth pll pll n recommended products indoor unit function product package type if mmic if gain block sot363 bga2714 bga2748 bga2771 bga2800 bga2801 bga2815 bga2816 bgm1012 function product package type lna rf transistor sige:c transistor sot343f bfu725f/n1 bfu710f bfu725f/n1 bfu730f wideband transistor sot343r bfg425w bfg424w sot143r bfg325/xr product highlight: tff1003hn low phase noise lo generator for vsat applications ydply422do6lbalilgfoi:0l1npwgp: nlsp:pnihtnlb:hp:0p0l1tnl ctbludiapl:tbaplct icfta bccihtnl/iv?l bn gbhal1tnlgfoi:0luaxyl hni:a8bhhpnali:0lhni:a pb,pna5lydplaup b1bp0ludiapl:tbapl t8ucbpal bbhdlghaafd23l1nt8lg:hpcaih5 features l ` ` ` ` ` ` `
24 nxp semiconductors rf manual 16 th edition recommended products outdoor unit function product package type if mmic if gain block sot363 bga2800 bga2801 bga2815 bga2816 bga2850 bga2865 bga2866 bgm1014 bgm1013 bgm1012 bga2714 function product package type lna2 rf transistor sige:c transistor sot343f bfu610f bfu630f bfu660f bfu690f bfu710f bfu725f/n1 bfu730f bfu760f bfu790f mmic sige:c mmic sot891 bgu7003 function product package type pll rf ic sige:c ic sot616 tff1003hn tff1007hn tff11x x xhn^ function product package type oscillator rf transistor wideband transistor sot343r bfg424w bfg425w sige:c transistor sot343f bfu610f bfu630f bfu660f bfu690f bfu710f bfu725f/n1 bfu730f bfu760f bfu790f function product package type synth rf diode varicap diode sod523 bb202 function product package type buffer rf transistor sige:c transistor sot343f bfu610f bfu630f bfu660f bfu690f bfu710f bfu725f/n1 bfu730f bfu760f bfu790f ^ 17 different types with lo ranges: 7-15 ghz, see 3.4.4 product highlight: tff1007hn low phase noise lo generator for vsat applications the tff1007hn is a ku-band frequency generator intended for low phase noise local-oscillator (lo) circuits for ku-band vsat transmitters and transceivers. the specified phase noise complies with iess-308 from intelsat. features ` divider settings: 64 ` input signal 230.46 to 234.38 mhz ` internally stabalized voltage references for loop filter and output power level ` lo generator with vco range: 14.75 to 15 ghz ` output level -4 dbm minimum ` phase noise compliant with iess-308 (intelsat) ` third- or fourth-order pll
25 nxp semiconductors rf manual 16 th edition products by application 1.4.1 gps application diagram 1.4 portable devices recommended products function product package type spdt switch rf diode pin diode various bap64^ bap1321^ bap51^ function product package type lna rf transistor sige:c transistor sot343f bfu725f /n1 bfu710f bfu730f mmic sige:c mmic sot891 bgu7003 sot886 bgu7003w bgu7004 bgu7005 bgu7007 bgu7008 bgu8007 wl-csp bgu8006 ^ also available in ultra-small leadless package sod882d product highlight: bgu8007 sige:c lna mmic for gps, glonass, and galileo the bgu8007 is a low-noise amplifier (lna) for gnss receiver applications in a plastic leadless 6-pin extremely-small sot886 package. it requires only one external matching inductor and one external decoupling capacitor. features ` covers full gnss l1 band, from 1559 to 1610 mhz ` noise figure (nf) = 0.75 db ` gain = 19.5 db ` high 1 db compression point of -12 dbm ` high out-of-band ip3 i of 4 dbm ` supply voltage 1.5 to 2.85 v ` power-down mode current consumption < 1 a ` optimized performance at low supply current of 4.8 ma ` integrated temperature stabilized bias for easy design ` requires only one input matching inductor and one supply decoupling capacitor 001aan955 external active antenna bpf lna spdt embedded antenna bpf lna bpf gps receiver ic
26 nxp semiconductors rf manual 16 th edition 1.4.2 fm radio application diagram recommended products function product package type spdt switch rf diode pin diode various bap64^ bap 65^ bap1321^ bap51^ function product package type lna rf transistor sige:c transistor sot343f bfu725f /n1 mmic sige:c mmic sot1209 bgu6101 bgu6102 bgu6104 sot891 bgu7003 sot886 bgu7003w ^ also available in ultra-small leadless package sod882d product highlight: bgu6102 mmic wideband amplifier the bgu6102 is an unmatched mmic featuring an integrated bias- enable function and a wide supply voltage. it is part of a family of three products (bgu6101, bgu6102, bgu6104), and is optimized for 2 ma operation. features ` applicable between 40 mhz and 4 ghz ` high ohmic fm lna: 13 db gain and 1.0 db nf at 100 mhz ` 50 fm lna: 15 db gain and 1.3 db nf at 100 mhz ` integrated temperature-stabilized bias for easy design ` bias current configurable with external resistor ` power-down mode current consumption < 6 a ` esd protection > 1 kv human body model (hbm) on all pins ` supply voltage from 1.5 to 5 v 001aan956 headset antenna lna spdt embedded antenna lna fm receiver ic
27 nxp semiconductors rf manual 16 th edition products by application 1.4.3 china mobile multimedia broadcasting (cmmb) in uhf band 470 C 862 mhz application diagram product highlight: bgu7003w mmic wideband amplifier the bgu7003w mmic is a wideband amplifier in sige:c technology for high-speed, low-noise applications. it is housed in a plastic leadless 6-pin extremely thin small outline sot886 package. features ` low-noise, high-gain microwave mmic ` bias current configurable with external resistor ` noise figure nf = 1.2 db at 600 mhz ` insertion power gain = 19.5 db at 600 mhz ` power-down mode current consumption < 1 a ` optimized performance at low supply current of 5 ma ` esd protection > 1 kv hbm on all pins recommended products function product package type lna mmic sige:c mmic sot891 bgu7003 sot886 bgu7003w sot1209 bgu6101 bgu6102 bgu6104
28 nxp semiconductors rf manual 16 th edition 1.4.4 cellular receiver application diagram recommended products function product package type lna mmic sige:c mmic sot891 bgu7003 sot886 bgu7003w product highlight: bgu7003 mmic wideband amplifier the bgu7003 mmic is a wideband amplifier in sige:c technology for high-speed, low-noise applications. it is housed in a plastic leadless 6-pin extremely thin small outline sot886 package. features ` applicable between 40 mhz and 6 ghz ` lte lna: 1 db nf, 18.5 db gain and -5 dbm iip3 at 750 mhz ` integrated temperature-stabilized bias for easy design ` bias current configurable with external resistor ` power-down mode current consumption < 1 a ` esd protection > 1 kv human body model (hbm) on all pins 001aan957 bpf pa umts lte gsm/ edge transceiver gsm/edge fe switch duplexer
29 nxp semiconductors rf manual 16 th edition products by application 1.4.5 802.11n dbdc and 802.11ac wlan application diagram bra502 antenna low pass lter bandpass lter medium power amplier tx rx application chipset pactrl spdt spdt switch lna recommended products function product package type medium power amplifier mmic medium power amplifier sot89 bga7024 bga7027 sot908 bga7124 bga7127 function product package type lna rf transistor sige:c transistor sot343f bfu730f bfu760f mmic sige:c mmic sot883c bfu730lx product highlight: bfu760f npn silicon germanium microwave transistor ydplzv&2lbaluinhlt1lhdpl1i8bcnlt1l& hd l/ab?li:0lv hd l/abzprf?l sp:pnihbt:ltlhni:abahtnali:0l i:loplgap0lhtlupn1tn8l:pincnli:nltl 1g: hbt:5lydpapl:pkhfsp:pnihbt:lbb0poi:0lhni:abahtnalt11pnlhdplopahl tl:tbapl1bsgnpl,pnagalsib:lupn1tn8i: p-l0nibb:slhdplctbpahl gnnp:h5l ydbalupn1tn8i: plicctbal1tnlophhpnlabs:iclnp puhbt:lihlctblutbpnli:0l p:iocpaltlnp pb,pnalhtltupnihpl8tnplntogahcnlb:l:tbanlp:,bnt:8p:ha5 features l ` ` ` ` `
30 nxp semiconductors rf manual 16 th edition 1.4.6 generic rf front-end application diagram bra850 low frequency chip set spdt switch vco mixer filter lna filter antenna buffer vco driver pa filter recommended products function product package type spdt switch rf diode bandswitch diode sod523 ba277 sod323 ba591 pin diode various bap51^ various bap1321^ function product package type lna rf bipolar transistor wideband transistor sot23 pbr951 sot323 prf957 sot323 prf947 sige:c transistor sot343f bfu610f bfu630f bfu660f bfu690f bfu710f bfu725f/n1 bfu730f bfu760f bfu790f mmic low-noise wideband ampl. sot1209 bgu6101 bgu6102 bgu6104 function product package type driver rf bipolar transistor wideband transistor sot323 prf957 sot23 pbr951 mmic gen-purp wideband amp sot363 bga2771 sot363 bga2866 ^ also available in ultra-small leadless package sod882d function product package type mixer rf bipolar transistor wideband transistor sot343 bfg410w sot343 bfg425w sot343 bfg480w mmic linear mixer sot363 bga2022 function product package type buffer rf bipolar transistor wideband transistor sot23 pbr951 sot323 prf957 sot323 prf947 sot416 prf949 function product package type power amplifier mmic general- purpose wideband amplifier sot89 bga6289 bga6489 bga6589 bga7024 bga7027 function product package type vco varicap diodes vco varicap diodes sod523 bb198 sod323 bb156 product highlight: bfu790f silicon npn germanium microwave transistor silicon npn germanium microwave transistor for high-speed, low- noise applications in a plastic, 4-pin dual-emitter sot343f package. features ` low-noise, high-linearity microwave transistor ` 110 ghz f t silicon germanium technology ` high maximum output power at 1 db compression of 20 dbm at 1.8 ghz
31 nxp semiconductors rf manual 16 th edition products by application 1.5 automotive 1.5.1 sdars & hd radio application diagram recommended products function product package type 1 st stage lna mmic low-noise wideband amplifier sot343f bfu730f function product package type 2 nd stage lna mmic general-purpose wideband amplifier sot343f bfu690f sot363 bga2869 bga2851 bga2803 function product package type 3 rd stage lna rf transistor sige:c transistor sot343f bfu690f bfu725f/n1 bfu790f product highlight: bfu730f npn wideband silicon germanium rf transistor the bgu730f is part of the family of 6 th (si) and 7 th (sige:c) generation rf transistors and can be used to perform nearly any rf function. these next-generation wideband transistors offer the best rf noise figure versus gain performance, drawing the lowest current. this performance allows for better signal reception at low power and enables rf receivers to operate more robustly in noisy environments. features at 2.3 ghz ` high maximum power gain (gp) of 17.6 db ` noise figure (nf) of 0.8 db ` input 1db gain compression (p i(1db) ) of -15 dbm ` input third order intercept point ip3 i of +4.7 dbm 001aan958 1st stage lna antenna 2nd stage lna 3rd stage lna filter chipset
32 nxp semiconductors rf manual 16 th edition 1.5.2 remote keyless entry, rf generic front-end with dedicated antenna for reception and transmission bra851 low frequency chip set vco mixer receiver transmitter filter lna filter antenna antenna buffer low frequency chip set vco driver pa filter recommended products function product package type lna rf bipolar transistor wideband transistor sot23 pbr951 sot323 prf957 sot323 prf947 mmic low-noise wideband ampl. sot1209 bgu6101 bgu6102 bgu6104 sige:c mmic sot886 bgu7003w function product package type driver rf bipolar transistor wideband transistor sot323 prf957 sot23 pbr951 mmic gen-purp wideband amp sot363 bga2771 sot363 bga2866 function product package type vco varicap diodes vco varicap diodes sod323 bb148 sod323 bb149a sod523 bb198 sod323 bb156 ^ aec-q101 qualified (some limitations apply) function product package type mixer rf bipolar transistor wideband transistor sot343 bfg410w sot343 bfg425w sot343 bfg480w function product package type buffer rf bipolar transistor wideband transistor sot23 pbr951 sot323 prf957 sot323 prf947 sot416 prf949 function product package type power amplifier rf bipolar transistor wideband transistor sot323 prf957 sot23 pbr951 mmic general-purpose wideband amplifier sot363 bga2771 sot363 bga2866 sot908 bga7124 product highlight: varicap diodes as vco varicap diodes are principally used as voltage varicap capacitors, with their diode function a secondary option. these devices are ideal for voltage controlled oscillators (vcos) in ism band applications. features ` excellent linearity ` excellent matching ` very low series resistance ` high capacitance ratio application diagram
33 nxp semiconductors rf manual 16 th edition products by application 1.5.3 tire pressure monitoring system application diagram recommended products function product package type pa rf bipolar transistor wideband transistor sot23 bfr92a sot323 bfr92aw sot23 bfr94a^ sot323 bfr93aw sot323 bfr94aw^ function product package type driver rf bipolar transistor wideband transistor sot323 prf957 sot23 pbr951 mmic amplifier sot363 bga2031/1 gen-purp wideband amp sot363 bga2771 sot363 bga2866 function product package type vco varicap diodes vco varicap diodes sod523 bb198 sod323 bb156 ^ aec-q101 qualified (some limitations apply) product highlight: bgu6101 mmic wideband amplifier the bgu6101 is an unmatched mmic featuring an integrated bias- enable function and a wide supply voltage. it is part of a family of three products (bgu6101, bgu6102, bgu6104), and is optimized for 2 ma operation. features ` applicable between 40 mhz and 6 ghz ` 13 db gain and 0.8 db nf at 450 mhz ` 50 fm lna: 15 db gain and 1.4 db nf at 100 mhz ` integrated temperature-stabilized bias for easy design ` bias current configurable with external resistor ` power-down mode current consumption < 1 a ` esd protection > 1 kv human body model (hbm) on all pins driver vco pa filter antenna sensor brb216
34 nxp semiconductors rf manual 16 th edition 1.5.4 car radio receiver (crest ics: tef6860hl, tef6862hl) application diagram bra501 agc & hum filter fm input filter & agc am lna if limiter amplifier fm de- modulator 1 st mixer oscillator if bandpass filter 2 nd mixer 1 st mixer 2 nd mixer oscillator fm mpx am audio det f v variable bw filter rf input filter if amplifier am de- modulator if bandpass filter if bandpass filter recommended products function product package type am lna rf transistor jfet sot23 bf862 function product package type fm input filter & agc rf diode varicap diode sot23 bb201^ sot23 bb207 pin diode sod523 bap70-02 sod323 bap70-03 ^ oirt function product package type agc & hum filter rf diode pin diode sot363 bap70am function product package type oscillator rf diode varicap diode sod323 bb156 sod523 bb208-02 note 1: the following recommended discrete products are applicable for nicepacs, ccc and ddice: nice:tea6840h,tea6845h,tea684 6h, nicepacs:tea6848h,tea6849h; ccc:tef6901h,tef6903h; ddice:tea6721hl. all recommended discrete products are applicable, excluding am lna in: dice2:tef6730hwce. note 2: phones and portable radios (ic:tea5767/68) use varicap bb202 as the fm oscillator. product highlight: bf862 junction field effect transistor our tuning portfolio contains advanced products for car radio reception applications and in-vehicle media platforms. the nxp devices for this application ensure excellent reception quality and ease of design-in. performance is demonstrated in reference designs. the high-performance junction fet bg862 is specially designed for am radio amplifiers. features ` high transition frequency and optimized input capacitance for excellent sensitivity ` high transfer admittance resulting in high gain ` encapsulated in the versatile and easy-to-use sot23 package
35 nxp semiconductors rf manual 16 th edition products by application * check status in section 3.1, as this type is not yet released for mass production 1.6 industrial, scientific & medical (ism) 1.6.1 broadcast / ism application diagram recommended ism products typ. 0.5 kw dvb-t typ. 5 kw dvb-t output po we r tv exciter dvb-t driver stages amplifiers harmonic filter po we r monitor 8 final product highlight: blf578xr power ldmos transistor designed for broadband operation, this 1400 w extremely rugged ldmos power transistor supports broadcast and industrial applications in the hf to 500 mhz band. this product is an enhanced version of the blf578. it uses nxp's xr process to provide maximum ruggedness capability in the most severe applications without compromising rf performance. features ` output power = 1400 w ` power gain = 23 db ` high efficiency = 69 % ` integrated esd protection ` excellent ruggedness ` excellent thermal stability se also broceal h us :'yptn h uim :'yptn bccm:'in yilafs d 937:'9n d (%) g b (db) lgmoymdep1h c1rt1eg l(bg hpa driver 1 2500 12 i 28 60 19 cw sot975 blf25m612(g)* final 10 128 600 - 50 75 28 pulsed sot539 blf174xr(s)* 10 128 1400 - 50 72 29 pulsed sot539 blf178xr(s) 10 500 200 - 50 70 24 pulsed sot1121 blf572xr(s)* 10 500 600 - 50 70 26 pulsed sot539 blf574xr(s)* 10 500 1400 - 50 69 23 pulsed sot539 blf578xr(s) 130 0 130 0 250 i 50 56 17 cw sot1121 blf6g13l(s)-250p 2400 2500 180 i/o 28 55 12 cw sot539 blf2425m6l(s)180p* 2400 2500 140 i/o 28 52 17. 5 cw sot502 blf2425m7l(s)140* 2400 2500 200 i/o 28 52 15 cw sot502 blf2425m7l(s)200* 2400 2500 250 i/o 28 55 15 cw sot539 blf2425m7l(s)250p* recommended broadcast products aplicatl ont pic d gal rmpuh: d gbl rmpuh: of 8rmg: rdvrmr: d (%) z b yasfn lgmoymdep1h c1rt1eg l(bg 89p 89pro9 tu )uu cu )u du c dw ) 4h bye ld4 plg)dt t teuu q) qc lq ta 4h bye ld4 plglec gpfkg t tuuu tuu eu lu ct 4h bye ld plghdt( b t tuuu teu )u ea ct 4h bye ld plghht( b tu teuu cuu qc du th 56g7o2 byttct plgledi( b1 tu tch tcuu )u d) chw) 56g7o2 by)qan plgtdhi edu hlu )uu ec ed ct 4h by)qan plghdai edu hlu quu )u el ct 4h byttct plghhei( b edu hlu luu )u el ct 4h by)qa plghhhn( b edu hlu luu )u el ct 4h by)qa plghhhp( b
36 nxp semiconductors rf manual 16 th edition 1.6.2 e-metering, rf generic front-end with a single antenna / zigbee application diagram bra850 low frequency chip set spdt switch vco mixer filter lna filter antenna buffer vco driver pa filter recommended products function product package type spdt switch rf diode bandswitch diode sod523 ba277 sod323 ba591 pin diode various bap51^ various bap1321^ function product package type lna rf transistor sige:c transistor sot343f bfu610f bfu630f bfu660f bfu690f bfu710f bfu725f/n1 bfu730f bfu760f bfu790f mmic sige:c mmic sot886 bgu7003w function product package type driver rf bipolar transistor wideband transistor sot343 bfg425w mmic gen-purp wideband amp sot363 bga2771 sot363 bga2866 ^ also available in ultra-small leadless package sod882d function product package type mixer rf bipolar transistor wideband transistor sot343 bfg410w sot343 bfg425w sot343 bfg480w mmic linear mixer sot363 bga2022 function product package type buffer rf bipolar transistor wideband transistor sot23 pbr951 sot323 prf957 sot323 prf947 sot416 prf949 function product package type medium power amplifier rf bipolar transistor wideband transistor sot343 bfg21w mmic general- purpose wideband amplifier sot89 bga6289 bga6489 bga6589 sot908 bga7124 sot908 bga7127 function product package type vco varicap diodes vco varicap diodes sod523 bb198 sod323 bb156 prod uct highlight: bga7 127 mmic medium power amplifier the bga7127 mmic is a one-stage driver amplifier offered in a low-cost, ultra-small sot908 leadless package. it delivers 27 dbm output power at 1 db gain compression and superior performance for various narrowband-tuned application circuits at frequencies up to 2700 mhz. features ` operating range: 400 to 2700 mhz ` 16 db small signal gain at 2 ghz ` 27 dbm output power at 1 db gain compression ` integrated active biasing ` 3.3 / 5 v single-supply operation ` simple quiescent current adjustment ` 1 a shutdown mode looking for a wireless microcontroller platform with chipsets, modules and supporting software? see section 2.5.6 setting the benchmark for ultra low-power and high-performance wireless connectivity solutions.
37 nxp semiconductors rf manual 16 th edition products by application 1.6.3 rf microwave furnace application application diagram brb418 antenna mpa oscillator hpa isolator controller recommended products function product package type oscillator rf transistor sot343r bfg410w bfg424w bfg425w sot343f bfg424f bfu610f bfu630f bfu660f bfu690f bfu710f bfu725f/n1 bfu730f bfu760f bfu790f prod uct highlight: new family for ism 2.45 ghz nxp's 6 th and 7 th generation ldmos technology, along with advanced packaging concepts, enables power amplifiers that deliver best-in-class performance at 2.45 ghz. the unsurpassed ruggedness and low thermal resistance, along with the intrinsic efficiency of the ldmos process, make these transistors ideally suited for furnace applications. features ` excellent ruggedness ` consistent device performance ` low thermal resistance for unrivalled reliability ` ease of design function product package type mpa (medium power amplifier) mmic sot89 bga6289 bga6489 bga6589 sot908 bga7124 sot89 bga7024 sot908 bga7127 sot89 bga7027 sot908 bga7130 * check status in section 3.1, as this type is not yet released for mass production nxp semp icmox s n dep utrsrf n dma utrsrf ilo1ut6f p d (%) z b yasfn ogmoymdep1h c1rt1eg l(bg 89p 89pro9 t c)uu tc lu ta 4h byad) plgc)@ltc(nb gpfkg ceuu c)uu thu )) tc 4h by)qa plgcec)@ll( bthui ceuu c)uu teu )c tdw ) 4h by)uc plgcec)@dl( bteu1 ceuu c)uu cuu )c t) 4h by)uc plgcec)@dl( bcuu ceuu c)uu c)u )) t) 4h by)qa plgcec)@dl( bc)ui1
38 nxp semiconductors rf manual 16 th edition 1.6.4 rf plasma lighting application diagram brb436 oscillator mpa hpa rf (plasma) bulb controller recommended products function product package type oscillator rf transistor sot143 bfg520 sot143 bfg325/xr sot23 bfr520 sot323 bfr92aw sot323 bfr93aw sot323 bfs520 sot343 bfg520w sot343 bfg325w/xr sot363 bfm520 sot416 bfr520t function product package type mpa (medium power amplifier) mmic sot89 bga6289 bga6489 bga6589 sot908 bga7124 sot89 bga7024 sot908 bga7127 sot89 bga7027 sot908 bga7130 prod uct highlight: ldmos enables rf lighting nxp's 50 v high-voltage ldmos process enables highest power at the extreme ruggedness levels necessary for this kind of application. blf578: 1200 w cw operation - highest power ldmos features ` highest power device ` unprecedented ruggedness ` low thermal resistance for reliable operation ` consistent device performance ` broadband device for flexible use looking for more information on rf plasma lighting? see section 2.5.2 rf-driven plasma lighting: the next revolution in light sources are powered by solid-state rf technology function product f min (mhz) f max (mhz) p1db (w) package type hpa driver 1 2500 12 sot975 blf25m612(g)* 10 500 20 sot4 67c blf571 final 1 1000 100 sot4 67 blf871(s) 10 500 300 sot502 blf573(s) 10 500 600 sot539a blf574 10 500 600 sot539 blf574xr(s)* 10 500 1200 sot539a blf578 10 500 1400 sot539 blf578xr(s) 688 1000 200 sot502 blf6g10(ls)-200rn 700 1000 135 sot502 blf6g10(ls)-135rn 700 1000 160 sot502 blf6g10(ls)-160rn 2400 2500 180 sot539 blf2425m6l(s)180p* 2400 2500 140 sot502 blf2425m7l(s)140 2400 2500 200 sot502 blf2425m7l(s)200* 2400 2500 250 sot539 blf2425m7l(s)250p * check status in section 3.1, as this type is not yet released for mass production
39 nxp semiconductors rf manual 16 th edition products by application 1.6.5 medical imaging application diagram product highlight: ldmos in emerging medical applications nxps line of 50 v high-voltage ldmos devices enables highest power output and features unequalled ruggedness for pulsed operation in mri and nmr applications. the high power densities enable compact amplifier design. features ` best broadband efficiency ` highest power (density) devices ` unrivalled ruggedness ` consistent device performance brb434 rf coils gradient coils magnet rf amplifier x gradient amplifier y gradient amplifier waveform generator z gradient amplifier rf electronics computer adc image display looking for more information on medical applications? see section 2.5.1 medical applications driven by rf power: from imaging to cancer treatment, a fexible and versatile technology in the doctors toolbox recommended products function product f min (mhz) f max (mhz) p1db (w) package type s1 driver 1 2500 12 sot975 blf25m612(g)* 10 500 20 sot4 67c blf571 final 1 1000 100 sot4 67 blf871(s) 10 500 300 sot502 blf573(s) 10 500 600 sot539a blf574 10 500 600 sot539 blf574xr(s)* 10 500 1200 sot539a blf578 10 500 1400 sot539 blf578xr(s) 688 1000 200 sot502 blf6g10(ls)-200rn 700 1000 135 sot502 blf6g10(ls)-135rn 700 1000 160 sot502 blf6g10(ls)-160rn 2400 2500 140 sot502 blf2425m7l(s)140 2400 2500 180 sot539 blf2425m6l(s)180p* 2400 2500 200 sot502 blf2425m7l(s)200* 2400 2500 250 sot539 blf2425m7l(s)250p * check status in section 3.1, as this type is not yet released for mass production
40 nxp semiconductors rf manual 16 th edition brb410 rf signals rf small signal rf po we r control and timing local oscillator signal local oscillator video rf power board mpa vga lna if amplifier hpa isolator wa veform genera to r display and control antenna drive detector pll vco duplexer mixer mixer pll vco video, timing, bias voltage, control and data i-f signals 1.7 aerospace and defense 1.7.1 microwave products for l- and s-band radar and avionics applications application diagram product highlight: bls7g2729l-350p ldmos s-band radar power transistor designed for s-band operation (2.7 to 2.9 ghz), this internally matched ldmos power transistor for rader applications delivers an output power of 350 w and a power gain of 13.5 db at an efficiency of 50 %. features ` easy power control ` integrated esd protection ` high flexibility with respect to pulse formats ` excellent ruggedness ` excellent thermal stability function product f min (mhz) f max (mhz) p1db (w) vds (v) 8 d (%) g p (db) package type hpa driver 500 1400 25 50 50 19 sot4 67c bll6h0514-25 1030 1090 10 36 40 16 sot4 67c bla1011-10 1030 1090 2 36 - 16 sot538a bl a1011-2 2700 3100 6 32 33 15 sot975c bls6g2731-6g 2700 3500 30 32 50 13 sot1135 bls6g2735l(s)-30 3100 3500 20 32 45 15.5 sot608 bls6g3135(s)-20 final 400 1000 600 50 57 20 sot539 blu6h0410l(s)-600p 500 1400 130 50 50 17 sot1135 bll6h0514l(s)-130 960 1215 250 36 50 13.5 sot502a bl a0912-250r 960 1215 500 50 50 17 sot634a bla6h0912-500 1030 1090 200 28 65 20 sot502 bl a6g1011l s -20 0 rg 1030 1090 600 48 52 17 sot539a bl a6h1011- 6 0 0 1200 1400 250 36 45 15 sot502a bll6g1214l-250 1200 1400 500 50 50 17 sot539a bll6h1214-500 1200 1400 250 50 55 17 sot502 bll6h1214l(s)-250 2700 3100 130 32 50 12 sot922-1 bls6g2731s-130 2700 2900 350 32 50 13.5 sot539 bls7g2729l(s)-350p 2900 3300 150 32 47 13.5 sot922-1 bls7g2933s-150 3100 3500 120 32 43 11 sot502 bls6g3135(s)-120 3100 3500 350 32 43 10 sot539 bls7g3135l(s)-350p* * check status in section 3.1, as this type is not yet released for mass production recommended products
41 nxp semiconductors rf manual 16 th edition products by application function product package type lna (low-noise amplifier) & mixer rf transistor sige:c transistor sot343f bfu710f bfu725f/n1 bfu730f function product package type if amplifier mmic mmic sot363 bga2800 bga2801 bga2815 bga2816 bga2850 bga2865 bga2866 general-purpose wideband amplifiers bgm1014 bgm1013 bgm1012 function product package type pll/vco lo generator rf ic sige:c ic sot616 tff1003hn tff1007hn tff11x x xhn^ function product gain range package type single vga (variable- gain amplifier) mmic 31 db sot617 bga7210 bga7204 function product gain range package type dual vga (variable- gain amplifier) mmic 24 db sot617 bga7350 28 db bga7351 function product p l (1 db) @ 940 mhz package type mpa (medium power amplifier) mmic 24 dbm sot89 bga7024 28 dbm bga7027 25 dbm sot908 bga7124 28 dbm bga7127 30 dbm bga7130 ^ 17 different types with lo ranges: 7-15 ghz, see 3.4.4 product highlight: bga28xx-family of if gain blocks the bga28xx if gain blocks are silicon monolitic microwave integrated circuit (mmic) wideband amplifiers with internal matching circuitry in a 6-pin sot363 plastic smd package. features ` no output inductor necessary when used at the output stage ` internally matched to 50 ` reverse isolation > 30 db up to 2 ghz ` good linearity with low second order
42 nxp semiconductors rf manual 16 th edition 2. focus applications, products & technologies state-of-the-art qubic4 nxps industry-leading qubic4 technology, available since 2002, has been widely deployed in the field and offers more consistent parameter performance compared to gaas technology. it speeds the migration from gaas to silicon and delivers more functionality in less space. high integration reduces the design footprint and enables more cost- competitive designs. it also improves reliability and offers significant savings in manufacturing expenditures. digital wideband vgas with high linearity & flexible current settings these 6-bit digital vgas (bga7204 & bga7210) offer high linearity (35 dbm @ 2.2-2.8 ghz) and high output power (23 dbm @ 2.2-2.8 ghz) across a large bandwidth without external matching. smart routing with no connection crosses simplifies design and decreases footprint by 25%. the unique power-save mode can effectively reduce the current consumption in tdd systems up to 45%. the bga7210 adds flexible current distribution across its two amplifiers, depending on the attenuation state, to save current. application diagram of base station (all cellular standards and frequencies) the block diagram below shows base station transmit (upper part, tx) and receive (lower part, rx) functions, and includes the tx feedback function (middle part, tx feedback). 2.1.1 build a highly efficient signal chain with rf components for transmit line-ups and receive chains as a global leader in rf technology and component design, nxp semiconductors offers a complete portfolio of rf products, from low- to high-power signal conditioning that delivers advanced performance and helps simplify your design and the development process. our solutions range from discrete devices to modular building blocks, so you can design a highly efficient signal chain. adc pll vco dvga att. lo dual dvga transmitter dual dac dual mixer 0 90 pll vco lna bp or lp if-saw rf-saw mpa hpa dual adc jedec if jedec interface jedec interface iq-modulator i q rf-bp if-saw power amplifier rx2 tx / rx1 digital front end dpd cfr duc ddc micro controller clock generator jitter cleaner obsai / cpri digital baseband tower - mounted amplifier c duplexer filter unit lna +vga (jedec) interface dvga mixer+lo data converter rf small signal rf power lna+vga tx rx 2.1 wireless communication infrastructure
43 nxp semiconductors rf manual 16 th edition focus applications, products & technologies dual digital if vgas the bga7350 and bga7351 are dual, independently controlled receive if vgas that operate from 50 to 250 mhz. integrated matching improves performance in the receiver chain, because the vga can drive the flter directly into the analog-to-digital converter to ensure a constant input level. the bga7350 has a gain range of 24 db, while the bga7351 has a range of 28 db. for both devices, the maximum gain setting delivers at least 16 dbm output power at 1 db gain compression (p1db). for gain control, each amplifer uses a separate digital gain-control code, which is provided externally through two sets of fve bits. the resulting gain fatness is 0.1 db. medium power amplifier the nxp mpas (bga7x2x/bga7x3x) are based on a one-stage amplifer, available in a low-cost surface-mount package. it delivers a set of available output power from 24 to 30 dbm. all cover the frequency range from 400 to 2700 mhz. low-noise amplifiers up to 2.8 ghz designed for high linearity and low noise, these monolithic sige:c bicmos lnas (bgu7051, bug7052 & bgu7053) deliver 18-24 db gain, 3-5 db more gain than equivalents, along with low power consumption. the rf input power overdrive of 20 dbm and the high esd protection (hbm 4 kv; cdm 2 kv) make these devices extremely rugged. integrated biasing circuitry, 3.3 v supply voltage and low external component count (only 6 capacitors) ensures easy system integration. integrated base station lnas with lowest nf for the complete lna chain nxp provides the industrys only fully integrated base station lna that can be tailored to the needs of individual oems for optimal ft in their rx line-ups. by integrating three stages in one monolithic design, these sige:c bicmos lnas (bgu706x) deliver the industrys lowest noise fgure for a receive chain (0.9 db), while saving up to 80% in component cost. additionally, the analog gain control up to 35 db, rf input power overdrive of 10-15 dbm, and high linearity (0.9-2.5 dbm ip3i at maximum gain) make them very suitable in small cell sizes. iq modulators the bgx7100 and bgx7101 devices combine high performance, high linearity i and q modulation paths for use in radio frequency up-conversion. it supports rf frequency outputs in the range from 400 to 4000 mhz. the bgx710x iq modulator is performance-independent of the iq common mode voltage. the modulator provides a typical output 1 db compression point (pl(1db)) value of 12 dbm and a typical 27 dbm output third- order intercept point (ip3 o ). unadjusted sideband suppression and carrier feed through are 50 dbc and ?45 dbm respectively. a hardware control pin provides a fast power-down/ power-up mode functionality which allows signifcant power saving. the bgx7101 is 4 db higher gain compared to the bgx7100. dual mixers the bgx722x device combines a pair of high-performance, high-linearity down-mixers for use in receivers having a common local oscillator (e.g. having main and diversity paths). each mixer provides an input 1 db compression point (p1db) above 13 dbm, with an input third- order intercept point (iip3) of 26 dbm. the small-signal noise fgure (nf) is below 10 db whereas under large signal blocking conditions the nf is typically 19 db. isolation between mixers is at least 40 db. synthesizer with an integrated vco (lo generator) the bgx7300 is a low phase noise wideband synthesizer with an integrated vco which allows the implementation of an integer-n or fractional-n phase-locked loop (pll). the integrated voltage controlled oscillator (vco) supports a fundamental frequency range from 2.2 ghz up to 4.4 ghz. the bgx7300 has dual differential rf outputs, each with output power up to +5 dbm. the vco frequency can by divided by 1/2/4/8/16/32 before being fed to the rf outputs. hence the generated output frequency can be as low as 68.75mhz. for isolation purpose, each rf output can be muted or forced into power-down mode using a hardware pin or spi sofware control. a dedicated differential input stage lets the bgx7300 work with an external vco. most of the characteristics are programmable via a 3- or 4-wire serial peripheral interface bus (spi). each vco is powered from an internally regulated voltage source providing suffcient power supply rejection. the device is designed to operate from 3.3 v nominal supply voltage connected to the supply pins. 10 db whereas under large signal blocking isolation between mixers is at least 40 db. selection guides of the listed components are available in chapter 3 (3.4.1 & 3.4.2).
44 nxp semiconductors rf manual 16 th edition these 6-bit digital vgas offer high linearity (35 dbm @ 2.2-2.8 ghz) and high output power (23 dbm @ 2.2-2.8 ghz) across a large bandwidth without external matching. smart routing with no connection crosses simplifies design and decreases footprint by 25%. the unique power-save mode can effectively reduce the current consumption in tdd systems up to 45%. the bga7210 adds flexible current distribution across its two amplifiers, depending on the attenuation state, to save current. key features ` internally matched for 50 - bga7204 = 0.4 to 2.75 ghz - bga7210 = 0.7 to 3.8 ghz ` high maximum power gain - bga7204 = 18.5 db - bga7210 = 30 db ` high output third-order intercept, ip3 o - bga7204 = 38 dbm - bga7210 = 39 dbm ` attenuation range of 31.5 db, 0.5 db step size (6 bit) ` high output power, p l(1db) - bga7204 = 21 dbm - bga7210 = 23 dbm ` fast switching power-save mode (power down pin) ` digitally controlled current setting from 120 to 195 ma with an optimum at 185ma (bga7210 only) ` simple control interfaces - bga7204 spi and parallel - bga7210 spi ` esd protection on all pins (hbm 4 kv; cdm 2 kv) ` hvqfn32 (5 x 5 x 0.85 mm) key benefts ` wideband operation supports platforms with multiple frequency ranges ` smart lead routing produces simpler design, decreases footprint by 25% ` power-save mode can reduce current consumption in tdd systems up to 45% ` flexible current setting (bga7210) saves power ` monolithic design enables high quality applications ` gsm, w-cdma, wimax, lte base stations ` wireless point-to-point and repeaters ` cable modem termination systems ` temperature-compensation circuits om7921 C bga7210 customer evaluation kit (also available om7922 C bga7204 cek) 2.1.2 digital wideband vgas with high linearity & flexible current settings nxp digital vgas bga7204 & bga7210
45 nxp semiconductors rf manual 16 th edition focus applications, products & technologies aaa-000665 c23 c1 c26 c25 l2 rf_out csh l1 c24 c27 c22 c12 c14 19 20 17 16 15 12 29 v dda v cc1 v ddd serout serin clk pupmxg/ pwrdn ss v cc2 rf_out rf_in c18 v sup c17 21 22 23 24 schematic of bga7210 evaluation board (om7921) the nxp bga7204 and bga7210 are monolithic digital variable-gain amplifers (vgas) that operate over an extremely wide range with high linearity and high output power. designed for the transmit path of wireless architectures, these vgas can be used to control the power level to the power amplifer. the up-converted signals are fed to the vga, and thus help compensate for variations in cell load and the presence of aging infrastructure equipment. the bga7204 operates in the range between 0.4 and 2.75 ghz, while the bga7210 operates between 0.7 and 3.8 ghz. by supporting more than 2 ghz of bandwidth, these devices can be used to populate several frequency bands. an integrated power-save mode makes it possible to reduce consumption even more, to just 15 ma during a receive slot. this can effectively reduce the current consumption in time division duplexing (tdd) systems up to 45%. the bga7210 builds on the bga7204 by adding fexible current setting across its two amplifers, depending on the attenuation state. the serial peripheral interface is used to set the attenuation state, and, using a similar method, to set the current through the frst and second amplifers. the desired confguration is set by software and enables current savings of as much as 75 ma. higher output power, higher peak gain, and smaller attenuator step sizes enable engineers to use fewer components and provide greater control to maintain and optimize performance in the transmit chain. smart routing (with no connection crosses) reduces the number of board connections, simplifes design-in, and decreases the design footprint by 25%. the monolithic design increases reliability and ensures high quality. digital vgas type number package f range [min] (mhz) f range [max] (mhz) @ v cc (v) @ i cc [typ] (ma) g p @ minimum attenuation (db) attenuation range (db) ip3 o [typ] (dbm) p l(1db) [typ] (dbm) nf [typ] (db) bga7204 sot617-3 400 700 5 115 18.5 31.5 38.0 21.0 7.0 700 1450 5 115 18.5 31.5 37.5 21.0 6.5 1450 2100 5 115 17.5 30.5 36.0 20.5 6.5 2100 2750 5 115 16.5 30.0 34.0 20.0 7.0 bga7210 sot617-3 700 1400 5 185 30.0 31.5 39.0 21.0 6.5 1400 1700 5 185 29.5 31.5 37.0 21.0 6.5 1700 2200 5 185 29.0 31.5 35.0 21.0 6.5 2200 2800 5 185 28.0 30.5 35.0 23.0 7.0 3400 3800 5 185 26.0 29.5 27.0 19.0 8.0
46 nxp semiconductors rf manual 16 th edition 2.1.3 doherty amplifier technology for state-of-the-art wireless infrastructure best-in-class pa designs enable considerable energy savings nxps latest power amplifier designs let the wireless infrastructure run with significantly higher energy efficiency C towards green base stations. in order to achieve the highest efficiencies currently possible, nxp combines its latest generations of ldmos technology (gen7 & 8) with the doherty concept. the high performance of our ldmos technology, matched with the efficiency of the doherty technology, creates power amplifiers that offer high efficiency and high gain, are easily linearizable, and are more cost-effective to operate. developed by w.h. doherty in 1936, the doherty amplifier remained largely unused because the dominant mobile communication system modulation techniques (fm, gmsk, and edge) did not require high peak-to- average ratio (par) signals. for today's base stations, however, transmitting 3g, 4g, and multi-carrier signals makes the high power and added efficiency of the doherty approach the preferred option for most service providers. nxps doherty designs ensure high efficiency while maintaining a very similar peak power capability of two transistors combined. the input and output sections are internally matched, benefiting the amplifiers with high gain, good gain flatness, and phase linearity over a wide frequency band. key features & benefits ` contains splitter, main and peak amplifier, delay lines, and combiner in one package - 40% efficiency @ 10 w average power - no additional tuning in manufacturing ` design is as easy as with a single class ab transistor ` ideally suited for space-constrained applications (e.g. remote radio heads, antenna arrays) ` currently available for td-scdma (bld6g21l(s)-50) and w-cdma (bld22l(s)-50); see section 3.7.1.4 for details integrated doherty nxp offers the worlds first fully integrated doherty designs. from the outside these devices look like ordinary transistors. in fact, they are completely integrated doherty amplifiers that readily deliver the associated high efficiency levels for base station applications. with the ease of design-in of an ordinary class ab transistor, they also provide significant space and cost savings.
47 nxp semiconductors rf manual 16 th edition focus applications, products & technologies key features & benefits ` most efficient doherty amplifier designs available to date ` production-proven, consistent designs ` nxps ldmos provides unsurpassed ruggedness ` currently available for the following frequency bands: - 728 to 821 mhz - 869 to 960 mhz - 1805 to 1880 mhz (dcs) - 1930 to 1990 mhz (pcs) - 1880 to 2025 mhz (td-scdma) - 2110 to 2170 mhz (umts / lte) - 2300 to 2400 mhz (wibro / lte) - 2500 to 2700 mhz (wimax / lte) - 3300 to 3800 mhz (wimax) all of our product demonstrators are supported by comprehensive documentation and hardware. please see section 3.7.1.8 for a complete list of available designs. discrete doherty amplifiers in addition to the integrated versions, nxp offers product demonstrators for very efficient, high-power, discrete two- and three-way doherty amplifiers. the two-way designs, based on the blf7g22ls-130 device, deliver 47.0 dbm (50 w) with 43% efficiency and 15.7 db gain for w-cdma applications. our flagship three-way doherty demonstrator achieves 48% efficiency at 48 dbm (63 w) average output power and 15.0 db gain with a two-carrier w-cdma signal. the current design covers the w-cdma standard for band 1 operation and is tailored towards high-yield, minimum-tuning, volume manufacturing. power ldmos doherty designs freq band (mhz) ppeak (dbm) pout-avg (dbm) vds (v) gain (db) drain eff. (%) type main transistor peak transistor 869-894 59.2 50.4 28 16 52 3-way blf7g10ls-250 2x blf7g10ls-250 920-960 57.3 49.3 30 16 50 asym blf8g10ls-160 blf7g10ls-250 1526-1555 56.6 48.6 28 18.4 42 sym blf7g15ls-20 0 blf7g15ls-20 0 1805-1880 58.6 51 28 16 47. 6 3-way blf7g20ls-200 2x blf7g20ls-200 1930-1990 58.2 50 28 16 40 sym blf7g20ls-250p blf7g20ls-250p 2010-2025 52.2 44 28 15.6 43 sym 1/2 blf7g21ls-160p 1/2 blf7g21ls-160p 2110-2170 56.5 49 28 14.2 46 asym blf7g22ls-160 blf7g22ls-200 2110-2170 5 7. 2 49.2 28 16 47 3-way blf7g22ls-160 2x blf7g22l(s)-160 2300-2400 56.8 48.5 30 15 42 3-way blf7g24ls-10 0 2x blf7g24ls-100 2620-2690 55.2 47. 2 30 15 41 asym blf7g27ls-10 0 blf7g27ls-140
48 nxp semiconductors rf manual 16 th edition 2.1.4 the new generation of ldmos rf power for wireless infrastructures: nxp's gen8 nxp announced last year the 8th generation of its renowned rf power device portfolio for base stations. listening carefully to the worlds leading infrastructure providers and understanding their requirements, we took a holistic approach to the development of gen8. this means that we scrutinized every detail of a power transistor and reconsidered the entire transistor system to ceate a new generation that performs markedly better than its predecessors, and its competitors, and again sets standards for the industry. gen8 addresses the key trends in the wireless infrastructure industry ` increasing signal bandwidths up to 100 mhz to enable full-band operation ` cost sensitivity: peak powers up to 270 watts in sot502- sized packages ` reduction in the size/weight/volume of the cabinet ` the ongoing need for greater electrical efficiency to reduce cooling requirements and operational expenditures ` ever-increasing output power ` the need to deploy multi-standard and future-proof solutions gen8 is the answer to all these often conflicting requirements. the package and die design, as well as the input and output match structures, have been optimized to enable wideband, affordable, compact, multi-standard, and highly efficient doherty power amplifiers. solutions for all cellular frequency bands are currently being sampled and are in production or will be released throughout 2012. the frst wave of gen8 transistors type f min (mhz) f max (mhz) p1db (w) matching package planned release description blf8g10l(s)-160 920 960 160 i/o sot502 released gen8 ceramic ldmos transistor for gsm, wcdma & lte applications blf8g10l(s)-160v 700 1000 160 i/o sot1244 released gen8 ceramic ldmos transistor for gsm, wcdma & lte applications blf8g10ls-200gv 700 1000 200 i/o sot1244c q412 gen8 ceramic ldmos transistor for gsm, wcdma & lte applications (gull-wing) blf8g10ls-270gv 700 1000 270 i/o sot1244c q412 gen8 ceramic ldmos transistor for gsm, wcdma & lte applications (gull-wing) blf8g10l(s)-300p 850 960 300 i/o sot539 q312 gen8 ceramic push-pull ldmos transistor for gsm, wcdma & lte applications (gull-wing) blf8g10ls-400pgv 700 1000 400 i/o sot1242c q412 gen8 ceramic push-pull ldmos transistor for gsm, wcdma & lte applications (gull-wing) blf8g20l(s)-200v 1800 2000 200 i/o sot1120 released gen8 ceramic ldmos transistor for gsm & lte applications blf8g20ls-270gv 1800 2000 270 i/o sot1244c q412 gen8 ceramic ldmos transistor for gsm & lte applications (gull-wing) blf8g20ls-270pgv 1800 2000 270 i/o sot1242c q412 gen8 ceramic push-pull ldmos transistor for gsm & lte applications (gull-wing) blf8g22ls-160bv 2000 2200 160 i/o sot1120 b released gen8 ceramic ldmos transistor for wcdma & lte applications blf8g22ls-200gv 2000 2200 200 i/o sot1244c q312 gen8 ceramic ldmos transistor for wcdma & lte applications (gull-wing) blf8g22ls-270gv 2000 2200 270 i/o sot1244c q312 gen8 ceramic ldmos transistor for wcdma & lte applications (gull-wing) blf8g22ls-400pgv 2000 2200 400 i/o sot1242c q312 gen8 ceramic push-pull ldmos transistor for wcdma & lte applications (gull-wing) blf8g24l(s)-200p 2300 2400 200 i/o sot539 q312 gen8 ceramic push-pull ldmos transistor for wcdma & lte applications blf8g27ls-140g 2500 2700 140 i/o sot502e q412 gen8 ceramic ldmos transistor for wcdma & lte applications (gull-wing) blf8g27ls-140v 2600 2700 140 i/o sot1244b q412 gen8 ceramic ldmos transistor for wcdma & lte applications blf8g27ls-200pgv 2500 2700 200 i/o sot1242c q412 gen8 ceramic push-pull ldmos transistor for wcdma & lte applications (gull-wing) blf8g27ls-280pgv 2500 2700 280 i/o sot1242c q412 gen8 ceramic push-pull ldmos transistor for wcdma & lte applications (gull-wing) note: all devices are internally matched (i/o)
49 nxp semiconductors rf manual 16 th edition focus applications, products & technologies 2.2 broadband communication infrastructure 2.2.1 connecting people, protecting your network: nxp's catv c-family for the chinese sarft standard specially designed for the chinese hybrid fiber coax (hfc) infrastructure, nxp's catv c-family offers a total solution for cable tv networks. it is both flexible enough for connecting rural communities as part of chinas "connecting to every village" program and powerful enough for upgrading major cities from analog to high-end digital services. all c-type devices are compliant with the chinese state administration for radio, film and television (sarft) standard, and cover most hfc applications in the 550 mhz to 1 ghz range. products ` bgy588c, bge788c and cgy888c push-pull amplifiers ` bgd712c, cgd944c, cgd942c, cgd982hci, cgd985hci and cgd987hci power doublers ` bg o807c, bgo807ce optical receivers benefts ` co mpliant with chinese sarft hfc networks standard ` transparent cap allows confirmation of product authenticity ` rugged construction ` hig hest by design internal esd protection features ` excell ent linearity, stability, and reliability ` high power gain ` extremely low noise ` silicon n itride passivity ` gaas hfet dies for high-end devices the bgy588c, bge788c and bgd712c devices cover the frequency range from 550 mhz to 750 mhz. extending the c-family portfolio into the high-end segment, the cgd944c, cgd942c, cgy888c and bgo807c operate between 40 and 870 mhz and have been specifcally tested under chinese raster conditions. manufactured using our gaas hfet die process, the cgd942c and cgd944c are high-gain, high-performance 870 mhz power doublers. the cgd982hci, cgd985hci and cgd987hci operate from 40 to 1003 mhz and are specifed for 870 mhz and 1 ghz. these power doublers are optimized for the chinese sarft standard. they are capable of satisfying the demanding requirements of top- end applications, including high-power optical nodes. our gaas hfet mmic dies are designed to provide the best esd protection levels, without the external tvs components normally used with gaas phemt devices. all catv c-type devices feature a transparent cap that makes it easy to distinguish them from counterfeit products. nxp c-family by application application bgy588c bge788c cgy888c bgd712c bgo807c bgo807ce cgd942c cgd944c cgd982hci cgd985hci cgd987hci optical node ? ? ? ? optical receiver ? ? ? ? distribution amplifer ? ? ? ? line-extender amplifer ? ? ? ? terminating amplifer ? ? ? c-family application information
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51 nxp semiconductors rf manual 16 th edition focus applications, products & technologies connecting people, protecting your network nxp catv c-family for the chinese sarft standard push-pull amplifers parameters bgy588c bge788c cgy888c power gain (db) typ 34.5 34.2 35.5 slope cable equivalent (db) range 0.2 - 1.7 0.3 - 2.3 1.5 typ. composite triple beat (db) max -57 -49 -68 typ. composite 2nd order distortion (db) max -62 -52 -66 typ. noise (@ f max ) (db) max 8 8 4 typ. total current consumption (ma) typ 325 305 280 frequency range (mhz) range 40 - 550 40 - 750 40 - 870 power doublers parameters bgd712c cgd942c cgd944c cgd982hci cgd985hci cgd987hci power gain (db) typ 18.5 23 25 23 24.5 27 slope cable equivalent (db) range 0.5 - 1.5 1 - 2 1 - 2 0.5 - 2 0.5 - 2 0.7 - 2 composite triple beat (db) max -62 -66 typ. -66 typ. -66 -66 -66 composite 2 nd order distortion (db) max -63 -66 typ. -66 typ. -69 -69 -66 noise (@ f max ) (db) max 7 5 5 5.5 5.5 5.5 total current consumption (ma) typ 395 450 450 440 440 440 frequency range (mhz) range 40 - 750 40 - 870 40 - 870 40 - 1003 40 - 1003 40 - 1003 optical receiver parameters bgo807c bgo807ce responsivity (r min ) min 800 800 slope cable equivalent (db) range 0 - 2 0 - 2 composite triple beat (db) max -71 -69 composite 2nd order distortion (db) typ -54 -53 noise (@ f max ) (db) max 8.5 8.5 total current consumption (ma) typ 190 190 frequency range (mhz) range 40 - 870 40 - 870 connector - / sc0 / fc0
52 nxp semiconductors rf manual 16 th edition new catv gaas platform layout 2.2.2 highly efficient line-up of 1 ghz gaas modules for sustainable catv networks nxp high gain power doublers cgd104xhi and push-pulls cgy104 designed for 1 ghz sustainable networks, these high-performance gaas devices enable extended bandwidth and higher data rates. they deliver increased network capacity and make way for high-end services like hdtv, voip, and digital simulcasting. key features ` excellent linearity, stability, and reliability ` high power gain for power doublers ` extremely low noise ` dark green products ` gaas hfet dies for high-end applications ` rugged construction ` superior levels of esd protection ` integrated ringwave protection ` design optimized for digital channel loading ` temperature compensated gain response ` optimized heat management ` excellent temperature resistance key benefits ` simple upgrade to 1-ghz capable networks ` low total cost of ownership ` high power-stress capability ` highly automated assembly key applications ` hybrid fiber coax (hfc) applications ` line extenders ` trunk amplifiers ` fiber deep-optical-node (n+0/1/2) ` bridgers the nxp power doublers cgd104xh and cgd104xhi are ideal for use in line extenders and trunk amplifiers. they support fiber deep-optical-node applications (n+0/1/2), delivering the highest output power on the market today. the gaas hfet die process delivers high gain, excellent ctb and cso ratings, and lower current. the new nxp cgy104x push-pull family is the first line-up on the market to combine very low noise, best-in-class distortion parameters, and low, carbon footprint capabilities. it delivers the best performance for the lowest power consumption, so it reduces opex and co 2 emissions all of nxps 1 ghz solutions are designed for durability and offer superior ruggedness, an extended temperature range, high-power overstress capabilities, and extremely high esd levels. as a result, they also reduce the cost of ownership. the gaas die is inserted in an hvqfn package that is then mounted on thermal vias that manage heat transfer to the heat sink. temperature-control circuitry keeps the module's high performance stable over a wide range of temperature. assembly is fully automated and requires almost no human intervention, so repeatability remains very high.
53 nxp semiconductors rf manual 16 th edition focus applications, products & technologies bra822 (n + 1) rf switch cgd104xhi h l out port 1 cgd104xhi h l out port 2 cgd104xhi h l out port 3 cgd104xhi h l out port 4 eq pa d pa d pa d pa d pa d cat v 1 ghz power doublers parameters cgd1040hi cgd1042h cgd1042hi cgd1044h cgd1044hi cgd1046hi power gain (db) typ 21 23 23 25 25 27 slope cable equivalent (db) typ 1.5 1.5 1.5 1 1.5 0.5 - 2.0 composite triple beat (db) typ -69 -69 -69 -69 -69 -73 composite 2 nd order distortion (db) typ -68 -68 -68 -68 -68 -68 noise (@ f max ) (db) max 6 6 6 6 6 5 total current consumption (ma) typ 440 450 440 450 440 460 frequency range (mhz) range 40 - 1003 40 - 1003 40 - 1003 40 - 1003 40 - 1003 40 - 1003 cat v 1 ghz push-pulls parameters cgy1041 cgy1043 cgy1047 cgy1049 cgy1032 power gain (db) typ 22 24 28 30 33 slope cable equivalent (db) typ 2 2 2 1.6 1.8 composite triple beat (db) typ -62 -62 -64 -62 -62 composite 2 nd order distortion (db) typ -64 -64 -66 -64 -64 noise (@ f max ) (db) max 5 5 4.5 5 5 total current consumption (ma) typ 250 250 250 250 265 frequency range (mhz) range 40 - 1003 40 - 1003 40 - 1003 40 - 1003 40 - 1003 catv 1 ghz power doublers catv 1 ghz push-pulls an optical node with multiple out-ports using the cgd1040hi / cgd1042hi / cgd1044hi / cgd1046hi upcoming products additional push-pulls, currently under development, will extend the capabilities of the power doublers even further, supporting almost all modern hfc applications. the push-pull cgy1041 will deliver a gain of 21 db, the cgy1043 a gain of 23 db, the cgy1049 a gain of 29 db and the cgy1032 a gain of 32 db. nxp is also developing a new, highly integrated power doubler. the cgd1046hi will deliver, in one ic, a 26 db power gain with 60 dbmv output power and excellent esd protection, for the ultimate in high-quality, distortionless devices.
54 nxp semiconductors rf manual 16 th edition nxps bgu703x and bgu704x low-noise amplifers (lnas) upgrade overall picture quality with improved signal handling (nf, dynamic range), while reducing the number of external components. produced in nxps own qubic4+ si bicmos process, they improve signal handling by compensating for the signal loss at the tuner switch. this can improve system performance by as much as 7 to 10 db. the bgu7031, bgu7041, and bgu7044 are lnas with fxed gain. the bgu7032, bgu7042, and bgu7045 have an additional bypass mode, and the bgu7033 adds two gain levels along with the bypass mode. in bypass mode, the devices consume less than 5 ma of current. integrated biasing and 75 matching reduces footprint by eliminating as many as 15 components compared to discrete solutions. all the devices can be used with discrete or si can tuners, as well as with on-board tuners. they deliver more robust esd performance compared to gaas solutions, withstanding >2 kv human body model (hbm) and >1.5 kv charged device model (cdm). key features ? internally biased ? fixed g p = 10 db: bgu7031 (5 v), bgu7041 (3.3 v), and fixed g p = 14 db: bgu7044 (3.3 v) ? programmable between g p = 10 db and bypass: bgu7032 (5 v), bgu7042 (3.3 v), and programmable between g p = 14 db and bypass: bgu7045 (3.3 v) ? programmable between g p = 10 db, 5 db and bypass: bgu7033 (5 v) ? flat gain between 40 mhz and 1 ghz ? output power at 1 db gain compression (p l(1 db) ) ranging from 9 to 14 dbm ? noise fgure as low as 2.8 db ? high linearity with an oip3 of 29 dbm ? 75 input and output impedance ? power-down during bypass mode ? esd protection >2 kv hbm, >1.5 kv cdm on all pins key trends ? multiple tuners in tv, dvr/pvr, and set-top box applications, requiring improved signal handling ? use of 3.3 v si tuner ics, perfect match with our 3.3 v lnas (bgu704x) applications ? terrestrial and cable set-top boxes (stbs) ? silicon and can tuners ? personal and digital video recorders (pvrs and dvrs) ? home networking and in-house signal distribution bgu703x evaluation board 2.3 tv and satellite 2.3.1 lnas with programmable gain & bypass option for improved tuner performance nxp lnas bgu703x &bgu704x for tvs/stbs designed for high linearity and low noise, these 3.3 and 5 v wideband lnas support multi-tuner applications in tvs, dvr/pvrs, and stbs operating between 40 mhz and 1 ghz. a unique programmable gain with bypass mode compensates for tuner switch signal loss (important in multi-tuner systems), and improves overall system performance by 7 to 10 db.
55 nxp semiconductors rf manual 16 th edition focus applications, products & technologies block diagram application diagram of an active splitter with passive loop-through brb403 rf input rf sw bf1108 or bf1 11 8 bgu703x/bgu704x vga wb lna bgu7031/bgu7041/bgu7044(optional) surge rf output conventional tuner or silicon tuner type package frequency range mode @ gain (1) nf p l (1db) oip3 fl (2) rl out rl in v cc i cc (mhz) (v) (ma) (db) (db) (dbm) (dbm) (db) (db) (db) bgu7031 sot363 40 - 1000 g p 10 db 5 43 10 4.5 14 29 -0.2 12 18 bgu7032 sot363 40 - 1000 g p 10 db 5 43 10 4.5 14 29 -0.2 12 18 bypass 5 4 -2 2.5 - 29 -0.2 8 8 bgu7033 sot363 40 - 1000 g p 10 db 5 43 10 4.5 14 29 -0.2 12 18 g p 5 db 5 43 5 6 9 29 -0.2 12 17 bypass 5 4 -2 2.5 - 29 -0.2 8 8 bgu7041 sot363 40 - 1000 g p 10 db 3.3 38 10 4 12 29 -0.2 12 21 bgu7042 sot363 40 - 1000 g p 10 db 3.3 38 10 4 12 29 -0.2 12 21 bypass 3.3 3 -2 2.5 - 29 -0.2 10 10 bgu7044 sot363 40 - 1000 g p 14 db 3.3 34 14 2.8 13 29 -0.2 12 20 bgu7045 sot363 40 - 1000 g p 14 db 3.3 34 14 2.8 13 29 -0.2 12 20 bypass 3.3 3 -2 2.5 - 27 -0.2 10 9 lnas for set-top boxes (75 )
56 nxp semiconductors rf manual 16 th edition fully integrated ku-band downconverters tff101xhn the tff101xhn is a family of fully integrated downconverters for ku-band lnbs. they give the best rf performance in terms of phase noise, gain, and noise figure at the lowest current consumption in the market. ku-band downconverter tff101xhn/n1 for lnb ` typical application: universal single lnb & twin lnb ` ultra-low current consumption: 52 ma over pvt ` only 7 external components ` no inductors ` single supply domain: 5 v ` uses low-cost fundamental 25 mhz crystal ` high pl1dbo = 6 dbm / 3oipo = 16 dbm ` best-in-class pn < 1.4 deg rms - 10 khz to 13 mhz integration bandwidth ` multiple gain types available - tff1014hn/n1 36 db - tff1015hn/n1 39 db - tff1017hn/n1 42 db - tff1018hn/n1 45 db ` flat gain over frequency (< 2 dbpp) ` input & output matched 50 ` small leadless dhvqfn16 package (2.5 x 3.5 x 0.85 mm) rf transistors bfu710f/730f the bfu710f and bfu730f are wideband rf transistors that can be used as an lna or as a mixer for a dbs lnb in the ku-band. in either application, they deliver good noise and linearity, a higher gain at a lower current consumption compared to their gaas phemt equivalents, and the cost advantage of silicon. bfu710f as lna in ku-band lnb ` typical application: lna2 for single-output lnb ` overall similar rf performance to gaas phemt lnas ` power consumption: 3.5 ma ` single supply: 3/5/6 v ` high rf gain: 13.5 db ` low noise figure: 1.6 db ` linearity (oip3): 12 dbm 2.3.2 complete satellite portfolio for all lnb architectures nxp satellite lnb devices tff101xhn, bfu710f/730f, and bga28xx designed for use in lnas, mixers, and if amplifiers, these robust, small-footprint products are the latest additions to nxp's leading portfolio for satellite lnb architectures. they are manufactured in nxps groundbreaking qubic4x sige:c and qubic4+ process technologies. bfu710f as mixer in ku-band lnb ` typical application: active mixer for single-output lnb ` single supply 3/5/6 v ` low power consumption: 2.5 ma ` lo drive < 0 dbm ` ssb noise figure < 8 db (including bpf at the input) ` ssb conversion gain > 5 db (including bpf at the input) ` linearity (oip3) > 0 dbm ` lo-rf isolation min 20 db ` rf match better than 10 db ` if match better than 8 db bfu730f as lna in ku-band lnb ` typical application: lna2 and lna3 for multi-output lnb ` overall similar rf performance to gaas phemt lnas ` power consumption: 11 ma ` single supply 3/5/6 v ` very high rf gain: 11.5 db ` low noise figure: 1.25 db ` linearity (oip3) > 17 dbm ` return loss > 10 db mmics bga28xx as if amplifiers (first stage & output stage) for compatibility with existing designs, the series uses market standard packages: the sot363 and the pin-compliant sot363f. the pinning is identical to nxps current gain block family, and the blocks deliver similar noise figures. new features include flatter gain, a positive gain slope, improved p1db vs icc, and no necessity for an output inductor. ` internally matched at 50 ` gain slope > 0.5 db
57 nxp semiconductors rf manual 16 th edition focus applications, products & technologies satellite outdoor unit, twin low noise block (lnb) with integrated mixer/ oscillator/ downconverter fully integrated mixer / oscillator / downconverter aaa-002896 lna1 splitter splitter combiner combiner h v lna2 3 lna3 lna3 lna3 shared crystal lna3 h/v detect bpf tff1014 switched to low-band bpf lna1 lna2 22 khz tone detect tff1014 switched to high-band if out 1 if out 2 ` single supply voltage: 3.3 or 5 v ` reverse isolation: > 30 db up to 2 ghz ` best-in-class power vs current consumption ` noise figure: 4 to 6 db at 1 ghz ` unconditionally stable (k > 1) ` high-compression-point models work without output inductor ` 6-pin sot363 plastic smd package these products C the integrated downconverters tff101xhn, the wideband transistors bfu710f/730f for lna and mixer functionality, and the bga28xx series of if mmics C are the most recent additions to nxps leading portfolio for satellite lnb. they join the other discrete products, including oscillators, amplifiers, and switches, to provide complete coverage for all lnb architectures. since the ics, transistors, and the mmics are manufactured in nxps industry-leading qubic4x sige:c and qubic4+ process, they offer better overall rf performance and are more robust than their gaas equivalents and offer the added cost advantage of silicon. the process technology also enables higher integration, for added features. nxp owns the industrial base for production (wafer fab, test, assembly), so volume supplies can be assured. note: also see section 1.3.4 satellite outdoor unit, twin low noise block (lnb) with integrated mixer/ oscillator/ downconverter 001aan954 bpf bias lb/hb/h/v detection phemt bias lo oscillator control linear regulated 5 v hor 10.7 ~ 12.75 ghz 1 st 2 nd ver 25.000 mhz v/t lin if amps bfu710f tff101xhn hb 0.95 ~ 1.9 ghz/ 1.1 ~ 2.15 ghz pll/vco loop filter mixer
58 nxp semiconductors rf manual 16 th edition 2.3.3 vsat, 2-way communication via satellite design a ku-/ ka-band vsat transceiver that meets iess-308 with nxp's ku-/ ka-band rf lo generators the tff100xhn family are ku-band rf plls, with integrated vco intended for low phase-noise local- oscillator (lo) circuits in ku- & ka-band vsat transmitters and transceivers. manufactured in a high- performance sige:c process, these devices deliver extremely low phase noise and comply with the iess-308 from intelsat. features ` phase noise compliant with iess-308 (intelsat) ` differential input and output ` divider settings at 16, 32, 64, 128, or 256 ` lock-detect output ` sige:c technology (120 ghz f t process) ` hvqfn24 (sot616-1) package applications ` vsat block upconverters ` vsat down conversion ` local oscillator signal generation vsat networks are commonly used to transmit narrowband data, such as point-of-sale transactions for credit cards, or to transmit broadband data that supports satellite internet access to a remote location, voip, or video. the network typically consists of a dish antenna, an outdoor unit, and an indoor unit. the outdoor unit is used for frequency translation between rf and if, and usually includes a microwave-based uplink/downlink separator, a low noise block (lnb) for receiving the downlink signals, and a block upconverter (buc). the vsat ics can be used to create the lo generator for a linear buc (meaning the if or rf conversion is done by mixing with an lo). to enable precise frequency and time multiplexing, the downlink signal provides an accurate frequency reference of 10 mhz. the indoor unit frequency multiplexes this with the uplink if signal, and the lo signal in the buc needs to be frequency-locked to the reference. the tff100xhn ics are housed in a 24-pin hvqfn (sot616-1) package. the pins have been assigned for optimal performance. three voltage domains are used to separate the block on the ic, and two pins for each output (out-p and out-n) have been reserved to match a typical layout using a linewidth of z = 50 microstrip on a 20-mil ro4003 board (1.1 mm). the ground pins have been placed next to the reference input and the output, and, to minimize crossings in the application, all the supply pins are on the same side of the ic.
59 nxp semiconductors rf manual 16 th edition focus applications, products & technologies sa te llit e hub vsat s sa te lli te hub vsat s type package f in(ref) v cc i cc pll phase noise @ n=64 @ 100 khz pll output buffer input f o(rf) p o rl out(rf) s i typ max typ max min (mhz) (v) (ma) (dbc/hz) (ghz) (dbm) (db) (dbm) tff1003hn sot616 50 - 815 3.3 100 -92 12.8 - 13.05 -5 -10 -10 tff1007hn sot616 228.78 - 234.38 3.3 130 -104 14.62 - 15 -3 -10 -10 typical vsat network complete lo generator for linear buc with tff1003hn type application i cc (ma) single supply (v) rf gain (db) nf (db) oip3 (dbm) bfu710f ku-band lna2 for single output lnb 3.5 3/5/6 13.5 1.6 12 bfu730f ku-band lna2 and lna3 for multiple output lnb 11 3/5/6 11.5 1.25 17 type application i cc (ma) single supply (v) lo drive ssb nf (db) ssb conversion gain (db) lo-rf isolation (db) bfu710f ku-band active mixer for single output lnb 2.5 3/5/6 < 0 dbm < 8 db > 5 db min 20
60 nxp semiconductors rf manual 16 th edition 2.3.4 low noise lo generators for microwave & mmwave radios nxp lo generators (integrated vco/pll) tff11xxxhn manufactured in nxps breakthrough qubic4x sige:c process technology, these highly integrated, alignment-free lo generators are low-power and low-spurious solutions that simplify design-in and lower the total cost of ownership. these low noise local-oscillator (lo) generators, optimized for use in many different microwave applications between 7 and 15 ghz, deliver highly accurate performance in a small footprint. they require no alignment or frequency modification on the production line, so they simplify manufacturing. high integration saves board space and makes design-in easier, for lower overall cost and faster development. since these ics are manufactured in nxps industry-leading qubic4x sige:c process, they offer better overall rf performance, are more robust than their gaas equivalents, and consume much less power. the process technology also enables higher integration, for added features. nxp owns the industrial base for production (wafer fab, test, assembly), so volume supplies can be assured. the tff1003hn is the basis for the entire family of lo generators. it has vco coverage of 12.8 to 13.05 ghz and accepts input signals from 50 to 816 mhz. the divider can be set for 16, 32, 64, 128, or 256, and the output level is -5 dbm with a stability of 2 db. the family of lo generators is completed by a range of 18 different devices operating in a center frequency ranging from 7 to 15 ghz. the rf performance of all these devices is consistent with the tff1003hn. all the lo generators have low power dissipation (330 mw typ), and all are available in a space-saving 24-pin hvqfn package. features ` tff11xxxhn family: lowest-noise lo generators for a full family in 7 to 15 ghz range ` maximum power consumption for all types is 330 mw (typ) ` phase-noise compliant with iess-308 (intelsat) ` proven qubic4x sige:c technology (120 ghz f t process) ` external loop filter ` differential input and output ` lock-detect output ` internally stabilized voltage reference for loop filter ` 24-pin hvqfn (sot616-1) package applications : tff11xxxhn family ` industrial/medical test and measurement equipment ` electronic warfare (ew) ` electronic countermeasures (ecm) ` point-to-point ` point-to-multipoint ` satellite communication/vsat ` radar systems full portfolio overview of low noise lo generators for general microwave applications in section 3.4.4
61 nxp semiconductors rf manual 16 th edition focus applications, products & technologies 2.4 portable devices 2.4.1 the best reception of gnss signals with the smallest footprint nxp sige:c gps lnas bgu700x/bgu8007 nxp's gps low-noise amplifiers offer the best reception of weak signals because of dynamic suppression of strong cellular and wlan transmit signals. moreover, as only two external components are required, designers can save up to 50% in pcb size and 10% in component cost. these sige:c low-noise amplifers (lnas) improve the reception of gps signals, including glonass and galileo. available in extremely small 6-pin packages, they reduce footprint, lower cost, and enhance reception in systems that use an active or patch antenna. gps has become a standard feature in a very wide range of consumer products, from personal navigation devices to digital video cameras, watches, electric cars, and more. gps signal power levels are weak and below the noise foor at -155 dbm. in many of these products, especially smart phones, strong transmitters such as wlan and cellular can drive the gps lna into compression. when the gps lna is in compression, it has lower gain, and that can worsen gps reception. also, when the lna is in compression, it generates intermodulation products and harmonics from the transmitter signals, which can overpower the weak gps signals and lead to no gps reception. the nxp bgu700x/bgu8007 series use adaptive biasing to immediately detect any output power from jammers, and compensate by temporarily increasing the current. as a result, optimal gps signal reception is maintained for as long as possible. each device in the bgu700x/bgu8007 series requires only one input matching inductor and one supply decoupling capacitor to complete the design. this creates a very compact design and lowers the bill of materials. designers can save up to 50% in pcb size and 10% in component cost. for example, the bgu7005 is in a 1.45 x 1 mm package with application area at only 4.53 mm 2 . this is 50% smaller than a comparable solution with a 9.06 mm 2 application area. key features ? low noise fgure: 0.75 db ? system-optimized gain of 16.5 or 19 db ? adaptive biasing dynamically suppresses strong cellular and wlan transmit signals, resulting in improved linearity of 10 db better ip3 under -40 to -20 dbm jamming conditions and effective gps output with jammer powers up to -15 dbm ? aec-q100 qualifed (bgu7004, bgu7008) for highest reliability in harsh conditions ? only two external components required ? small 6-pin leadless package: 1.45 x 1.0 x 0.5 mm key benefts ? maintains optimal gps signal reception for as long as possible ? signifcant pcb size savings (50%) ? lower component cost (10%) applications ? smart phones, feature phones ? tablet s ? personal navigation devices (pnds) ? digital still camera (dscs) ? digital video camera (dvcs) ? rf front-end modules (used in phones) ? complete gps chipset modules (used in dscs) ? automotive applications (bgu7004/8): toll collection, emergency call
62 nxp semiconductors rf manual 16 th edition application diagram 001aan955 external active antenna bpf lna spdt embedded antenna bpf lna bpf gps receiver ic type package package size mmic * smd's appl. smd size smd's area appl. area x y pins pitch area x y mm mm mm # mm mm 2 # mm mm mm 2 mm 2 bgu7005/7 sot886 1.45 x 1 1.7 1.25 6 0.5 2.13 2 1.5 0.8 2.4 4.53 competitor wafer-level package 1.26 x 0.86 1.5 1.1 6 0.4 1.65 6 1.5 0.8 7. 2 8.85 competitor wafer-level package 0.86 x 0.86 1.1 1.1 4 0.4 1.21 4 1.5 0.8 4.8 6.01 competitor thin small leadless package 2 x 1.3 2.25 1.55 6 0.5 3.49 4 1.5 0.8 4.8 8.29 competitor thin small leadless package 1.4 x 1.26 1.65 1.5 6 0.48 2.48 4 1.5 0.8 4.8 7. 2 8 competitor thin small outline non-leaded 1.5 x 1.5 1.75 1.75 6 0.5 3.06 5 1.5 0.8 6 9.06 * includes keep-out area on pcb (a commonly used assembly rule) smallest footprint @ 1.575 ghz type package supply voltage supply current insertion power gain noise fgure input power at 1 db gain compression input third-order intercept point f 1 = 1713 mhz, f 2 = 1851 mhz v cc i cc |s 21 | 2 nf p l(1db) ip3 i (v) (ma) (db) (db) (dbm) (dbm) min max min typ max min typ max typ v cc = 1.5 v, min v cc = 1.5 v, typ v cc = 1.8 v, min v cc = 1.8 v, typ v cc = 2.2 v, min v cc = 2.2 v, typ v cc = 2.5 v, i cc = 5 ma v cc = 2.85 v, min v cc = 2.85 v, typ v cc = 1.5 v, min v cc = 1.5 v, typ v cc = 1.8 v, min v cc = 1.8 v, typ v cc = 2.2 v, min v cc = 2.2 v, typ v cc = 2.5 v, i cc = 5 ma v cc = 2.85 v, min v cc = 2.85 v, typ bgu7003 sot891 2.2 2.85 3 - 15 16 18.3 20 0.8 - - - - - - -20 - - - - - - - - 0 - - bgu7004^ sot886 1.5 2.85 - 4.5 - - 16.5* - 0.9 - - -14 -11 - - - -11 -8 - - 5 9 - - - 5 12 bgu7005 sot886 1.5 2.85 - 4.5 - - 16.5* - 0.9 - - -14 -11 - - - -11 -8 - - 5 9 - - - 5 12 bgu7007 sot886 1.5 2.85 - 4.8 - - 18.5** - 0.9 - - -15 -12 - - - -14 -11 - - 1 4 - - - 2 5 bgu7008^ sot886 1.5 2.85 - 4.8 - - 18.5** - 0.9 - - -15 -12 - - - -14 -11 - - 1 4 - - - 2 5 bgu8007 sot886 1.5 2.2 - 4.6 - - 19.0*** - 0.75 # -15 -12 - - -13 -10 - - - 1 4 - - 2 5 - - - sige:c gps lnas ^ aec-q101 qualified (some limitations apply) # evaluation board losses excluded * 16.5 db without jammer / 17.5 db with jammer ** 18.5 db without jammer / 19.5 db with jammer *** 19.0 db without jammer / 20.5 db with jammer
63 nxp semiconductors rf manual 16 th edition focus applications, products & technologies rf radiation is not a new technology in medicine. it is currently used for imaging purposes in mri (magnetic resonance imaging) and epri (electron paramagnetic resonance imaging), techniques that employ frequencies from a few megahertz to about 500 mhz. other well-known external heat-treatments to rejuvenate skin or relieve muscle pain make use of frequencies around 480 khz C not too demanding in terms of rf. surgical equipment to cut and simultaneously coagulate blood vessels runs off rf at about 5 mhz. the latter application belongs to a class of treatment techniques that is growing rapidly and uses rf radiation to deposit energy locally at various parts of the body C in general to ablate (remove) unwanted tissue. inside the body, the rf energy heats the surrounding tissue until it is desiccated and/or necrotized. the damaged tissue will later be re-absorbed by the surrounding, living tissue. further application examples for rf ablation include cancer treatment in the lung, kidney, breast, bone and liver, removal of varicose veins, treatment of heart arrhythmia, and a growing list of other applications that benefit from the high control and feedback possible with rf. another advantage of rf in this context is the fact that it can be applied via small catheters ending in antennas that deploy the rf signal. unlike older, direct-current techniques, the tissue is heated only very locally around the antenna. neighboring nerves (and the heart) are not stimulated. this led to the development of a variety of specialized catheters, used during minimally invasive surgery, along with ultrasound or x-ray imaging to determine the exact location of the rf-active part. during the treatment, the impedance of the surrounding tissue can be monitored and the end-point determined. with proper catheters, one can even achieve self limitation due to the reduced uptake of rf energy in desiccated tissue. likewise, the rf frequency can be used to tune the energy deposition zone around the catheter: the higher the frequency, the smaller the penetration depth C and hence the volume to deposit the rf energy C in the watery tissue. with the trend towards higher rf frequencies and powers, the complexity of rf generators and the requirements for the device technology also increase. above 10 mhz, say, up to 3.8 ghz, the technology of choice for power amplifiers is si ldmos (laterally 2.5 industrial, scientific & medical 2.5.1 medical applications driven by rf power: from imaging to cancer treatment, a flexible and versatile technology in the doctors toolbox diffused metal oxide semiconductor). this technology has proven to be powerful, efficient, and rugged in base stations, radar systems, broadcast transmitters, and other industrial, scientific, and medical (ism) applications. ldmos is available from up to 50 v supply to achieve power levels up to 1,200 w per single device, with outstanding ruggedness and high gain and efficiency. to drive and control the ldmos power amplifier stages, it takes voltage-controlled oscillators, phase locked loops, and medium power amplifiers. these parts of the rf signal chain are conveniently available based on reliable and high-volume sige:c (qubic) semiconductor technologies. going a step further, one can even use high-speed converters to drive the signal chain entirely from the digital domain, for full and easy control over the shape and modulation of the applied rf. rf implications these in-situ medical applications and, in general, most of the ism applications, usually form highly mismatched rf loads during some part of the usage cycle. this in turn means that, without protection or other measures, all of the "injected" rf power reflects back into the final stage of the amplifier and needs to be dissipated in the transistor(s), and most likely destroys the device(s) if this situation lasts too long. ldmos transistors are designed to be extremely rugged and generally withstand these mismatch situations without degrading over time. this device ruggedness, or the ability to withstand harsh rf conditions in general, be it mismatch or extremely short pulse rise and fall times, is essential for reliable device performance. rf power companies have gone to great lengths to achieve best-in-class device ruggedness. the technologies have been hardened under the most stringent ruggedness tests during development, which is particularly true for the 50 v technology. among other factors, the base resistance of the parasitic bipolar and the drain extension of the ldmos device play key roles in this respect. this ruggedness, combined with the power density and the high efficiencies achievable, make ldmos the preferred technology for rf power amplifiers up to 3.8 ghz. rf technology is making its way into all kinds of medical applications, ranging from the well-known imaging techniques (mri, epri) over low frequency, external heat treatment, and electro-surgical tools, to minimally invasive endoscopic cancer treatment (rf ablation). one clear trend is the increasing share of rf-based technologies for ablation. another is the trend towards higher rf frequencies (several ghz) and higher powers (> 100 w) in order to achieve higher spatial resolution, better control, and shorter treatment times.
64 nxp semiconductors rf manual 16 th edition this technology works without any additional electrodes in the bulb, unlike standard high-intensity discharge lamps. no electrodes means very long operating lifetimes, since the contamination and wire erosion that lead to decreased efficiency and eventual lamp failure are precluded. the rf light source lives up to 50,000 hrs when it reaches 50% of its original light output. typical high-intensity discharge lamps, by comparison, achieve 20,000 hrs operating life. another strong point of the plasma light is its efficiency: 1 w of rf power is converted to 130-140 lm of light. this leads to very compact, very bright lamps that easily emit 10,000 to 20,000 lm of white light with a close-to-sunlight color rendition. the key enabler for the rf light source is rf technology, based on si ldmos rf power transistors. ldmos technology operating at 28 v is the leading rf power technology for cellular base stations or broadcast transmitters as final amplifier stages in the frequency range between a few mhz up to 3.8 ghz. recently, another ldmos format, 50 v ldmos, has emerged for use in broadcast, ism, defense and avionics applications. it combines high power density to achieve power levels up to 1,200 w per single device and outstanding ruggedness, with high gain and efficiency at frequencies of up to 1.5 ghz. comparison of lighting technologies the table below summarizes currently available technologies that generate bright light with varying degrees of efficiency. it lists a few key parameters, including lifetime, luminous flux, efficacy, color rendition index, color temperature, start-up time, and re-strike time (time to start after switch-off from normal operation). type lifetime (hrs) luminous flux (klm) efficacy (lm/w) color rendering color temperature (k) start-up time (s) re-strike time (s) incandescent 2,000 1,700 10 to 17 100 3200 0.1 0.1 fluorescent 10,500 3,000 115 51 to 76 2940 to 6430 0.3 0.1 led 25,000 130 60 to 100 30 6000 0.1 0.1 hid (high- intensity discharge) 20,000 25,000 65 to 115 40 to 94 4000 to 5400 60 480 rf plasma 50,000 25,000 100 to140 70 to 94 4000 to 5500 30 25 2.5.2 rf-driven plasma lighting: the next revolution in light sources are powered by solid-state rf technology the plasma light source is among the brightest and most efficient available to date and boasts a very long life time. important to note is the high brightness per bulb: much brighter than leds, for example. consequently, it takes multiple leds to generate the light output of a single plasma light source. hence, led luminaries for street lighting will be considerably larger than those for plasma light sources. rf implications the rf plasma lighting sources can operate at a wide range of rf frequencies, but initial applications typically focus at frequencies of around a few hundred megahertz. at these frequencies both the 28 and 50 v ldmos technologies can be used, yielding high efficiency values of 70% to more than 80% and low-heat dissipation making compact plasma lamp designs possible. the rf-driven plasma light is a perfect example of novel applications that can be powered by rf energy in the industrial, scientific, and medical (ism) realm. established technologies use rf to pump a gas discharge in a laser cavity. these "gas discharge" applications and, in general, most of the ism applications, typically form highly mismatched rf loads during some part of the usage cycle. in the case of gas discharges, for example, the gas cavity acts as an "open circuit" during switch-on. this in turn means that without protection or other measures, all of the "injected" rf power reflected back into the final stage of the amplifier needs to be dissipated in the transistor(s) right there and most likely destroys the device(s) if this situation lasts too long. after the discharge strikes, the load impedance reverts to "matched," eventually, and the transistor sees an acceptable load. obviously, these mismatched conditions occur every time the plasma is "switched on, exerting strain on the finals. ldmos transistors are designed to be extremely rugged and generally withstand these mismatch situations without degrading over time. this ruggedness, combined with the high power density and efficiency achievable, make ldmos the preferred technology for rf lighting and other equally demanding applications in the ism realm. recent developments in rf power technology, such as improved cost structure, ruggedness, and power levels of up to 1200 w per device, have enabled a breakthrough light source technology, called rf plasma lighting. all rf plasma lighting sources make use of a small, electrode-less quartz lightbulb that contains argon gas and metal halide mixtures. the bulb is powered by direct rf radiation, which ignites the gas mixtures to create and power a bright plasma, the color of which can be tuned by the composition of its constituents. table 1: comparison of light generation. note: numbers are only valid for a qualitative comparison. source: www.wikipedia.org and references therein.
65 nxp semiconductors rf manual 16 th edition focus applications, products & technologies key features ? 40/110 ghz transition frequency allows for applications up to 18 ghz and beyond ? high gain of 13.5 db at 12 ghz with a low noise fgure of 1.45 db ? high linearity of 34 dbm (oip3) at 1.8 ghz ? consuming only 3 ma to generate 13.5 db gain at 12 ghz ? plastic surface-mount sot343f package for high performance and easy manufacturing applications ? wideband applications that require - low-noise amplifers - high linearity and high output amplifers - buffer amplifers - mixers - oscillators the devices in this family of sixth- (si) and seventh- (sige:c) generation rf transistors can be used to perform nearly any rf function. for example, the bfux10f, bfux30f, bfu725/n1 2.5.3 qubic4 si and sige:c transistors for any rf function nxp wideband transistors bfu6x0f & bfu7x0f these next-generation devices offer the best rf noise fgure versus gain performance, drawing the lowest current. this performance allows for better signal reception at low power and enables rf receivers to operate more robustly in noisy environments. can be used as low-noise amplifers, while the bfux60f and bfux90f can be used as high-linearity and high-output amplifers. other options include using these transistors as buffer amplifers, mixers, and oscillators. higher transition frequencies (40 to 110 ghz) enable higher application frequencies (24/77 ghz car radar, 18 ghz ka band, 3.5-3.7 wimas, etc.), and the devices meet the low current requirements of wideband applications. as a result, these devices are ideal for use in a very wide range of applications: second and third lna stage and mixer stage in dbs lnbs, ka/ku band dros, satellite radio (sdars) lna, c-band/x-band high-output buffer amplifers, amr, wlan/wifi, zigbee, bluetooth, fm radio, gps, cellular (lte, umts), mobile tv, rke, high-linearity applications, low current battery-equipped applications, low-noise amplifers for microwave communications systems, medium output power applications, microwave driver/buffer applications, and more. selection guide C specifcation typenumber package package name generation f t [typ] (ghz) v ceo [max] (v) i c [max] (ma) p tot [max] (mw) polarity nf (db) @ f (ghz) @ i c (ma) @ v ce (v) nf (db) @ f (ghz) @ i c (ma) @ v ce (v) pl (1db) [typ] (dbm) @ f (ghz) @ i c (ma) @ v ce (v) ip3 [typ] (dbm) @ f (ghz) @ i c (ma) @ v ce (v) bfu610f sot343f dfp4 6 th 15 5.5 10 136 npn 1.1 2.4 2 2 1.7 5.8 2 2 3 5.8 10 1.5 18 5.8 10 1.5 bfu630f sot343f dfp4 6 th 21 5.5 30 200 npn 0.85 2.4 3 2 1.3 5.8 3 2 12.5 5.8 30 2.5 27.5 5.8 30 2.5 bfu660f sot343f dfp4 6 th 21 5.5 60 225 npn 0.6 1.5 6 2 1.2 5.8 6 2 18.5 5.8 60 4 28 5.8 40 4 bfu690f sot343f dfp4 6 th 18 5.5 100 230 npn 0.6 1.5 15 2 0.7 2.4 15 2 20 2.4 70 4 33 2.4 70 4 bfu710f sot343f dfp4 7 th 43 2.8 10 136 npn 0.85 5.8 2 2 1.45 12 2 2 4.5 5.8 5 2.5 19.5 5.8 10 1.5 bfu725f/n1 sot343f dfp4 7 th 55 2.8 40 136 npn 0.7 5.8 5 2 1.1 12 5 2 8 5.8 25 2 19 5.8 25 2 bfu730f sot343f dfp4 7 th 55 2.8 30 197 npn 0.8 5.8 5 2 1.3 12 5 2 12.5 5.8 15 2.5 29 5.8 20 2.5 bfu760f sot343f dfp4 7 th 45 2.8 70 220 npn 0.4 1.5 12 2 0.5 2.4 12 2 18.5 5.8 30 2.5 33 5.8 30 2.5 bfu790f sot343f dfp4 7 th 25 2.8 100 234 npn 0.4 1.5 20 2 0.5 2.4 20 2 19 2.4 60 2.5 34 2.4 30 2.5 red = application note available on nxp.com selection guide C function function lnas, mixers, frequency multipliers, buffers high-linearity, high-output amplifers & drivers oscillators frequency range <6 ghz 6 ghz C 12 ghz 12 ghz C +18 ghz <6 ghz 6 ghz C 12 ghz 12 ghz C 18 ghz <6 ghz 6 ghz C 12 ghz 12 ghz C +18 ghz type band l,s,c x, ku low ku high, ka l,s,c x, ku low ku high l,s,c x, ku low ku high, ka bfu610f ? ? ? bfu630f ? ? ? ? ? bfu660f ? ? ? ? bfu690f ? ? ? ? bfu725f/n1 ? ? ? ? ? ? ? bfu710f ? ? ? ? bfu730f ? ? ? ? ? ? ? ? bfu760f ? ? ? ? ? bfu790f ? ? ?
66 nxp semiconductors rf manual 16 th edition 2.5.4 building on decades of innovation in microwave and radar nxp builds on more than 50 years of history in semiconductor technology and component design. for more than three decades we have led in providing high-performance rf technologies for microwave applications. the company has built a strong position in the field of rf small-signal and power transistors for microwave amplifiers with best-in-class si devices and processing technologies. we were the first semiconductor company to supply s-band transistors (2700 to 3500 mhz) based on laterally diffused metal-oxide-silicon (ldmos). to further strengthen our position towards the future, we are currently developing new high-power and high-bandwidth technologies based on gallium nitride (gan) material. another enabling technology is nxps bicmos process qubic, which is available in several variants with f t up to 200 ghz, each specialized to address specific small-signal rf applications. the product portfolio encompasses: - low-noise amplifiers (lnas) - variable-gain amplifiers (vgas) - mixers - local oscillators (los) - lo generators nxp now also focuses on architectural breakthroughs and has developed highly integrated products for microwave and millimeter wave. one example is a family of lo generators from 7 to 15 ghz with integrated pll and vco. another example is an integrated rf power module in s-band (3.1-3.5 ghz) at 200 w. rf small-signal product highlight manufactured in nxps breakthrough qubic4x sige:c process technology, these highly integrated, alignment-free lo generators tff1xxxhn are low-power, low-spurious solutions that simplify design-in and lower the total cost of ownership. features ` lowest noise lo generators for 7 to 15 ghz range ` maximum power consumption for all types, typical 330 mw ` phase-noise compliant with iess-308 (intelsat) ` proven qubic4x sige:c technology (120 ghz f t process) ` external loop ?lter ` differential input and output ` lock-detect output ` internally stabilized voltage reference for loop filter rf power product highlight the bls6g2933p-200 is the first ldmos-based, industry- standard pallet produced by nxp. this pallet offers more than 40% efficiency and includes the complete bias network for s-band applications.
67 nxp semiconductors rf manual 16 th edition focus applications, products & technologies features ` reduces component count and considerably simplifies radar system design ` p1 db output power 200 w ` efficiency > 40% ` industry-standard footprint ` 50 in/out matched for entire bandwidth ` lightweight heat sink included ` the advantages of ldmos over bipolar - higher gain and better efficiency - better ruggedness C overdrive without risk to 5 db - improved pulse droop and insertion phase - consistent performance C no tuning required - improved thermal characteristics C no thermal runaway - non-toxic packaging and rohs-compliance for a complete list of products, see the respective small- signal and power microwave pages in chapter 3 microwave applications and bands of operation system frequency vhf and uhf <1 ghz l-band 1200 - 1400 mhz s-band 2700 - 3500 mhz x-band 8000 - 12000 mhz commercial avionics dme (distance measuring equipment) 978 - 1215 mhz transponders mode a / mode s / mode c / tcas 1030 - 1090 mhz military avionics iff transponders (identification, friend or foe) 1030 - 1090 mhz tacan (tactical air navigation) 960 - 1215 mhz jtids / mids (joint tactical information distribution system) 960 - 1215 mhz marine radar 9300 - 9500 mhz
68 nxp semiconductors rf manual 16 th edition 2.5.5 digital broadcasting at its best the blf881 / blf888a transistor line-up enables todays most powerful and efficient digital broadcast transmitter applications blf881 this transistor is based on nxps 50 v ldmos technology and features 120 w rf output power for broadcast transmitter and industrial applications. an unmatched device, the blf881 can be used in the hf to 1 ghz range. the excellent ruggedness and broadband performance of this device make it ideal for digital transmitter applications C either on its own or as a driver in combination with the high-power transistor blf888a. the blf881 is also available in an earless version, the blf881s, which enables an even more compact pcb design. blf888a running from a 50 v supply voltage, the blf888a is a 600 w ldmos rf power transistor for broadcast transmitter and industrial applications. being a matched device, the blf888a is optimized for digital signal broadcasting and can deliver 120 w average dvb-t output power over the full uhf band from 470 mhz to 860 mhz with 20 db power gain and 31% drain efficiency. the excellent ruggedness of this transistor (it withstands a vswr in excess of 40:1) makes it the ultimate choice as final stage for digital transmitter applications C ideally accompanied by a blf881 as the driver. this device is also available in an earless package, denoted blf888as, to enable surface-mount assembly processes and take optimum advantage of the very low thermal resistance of the package. key features and benefits ` excellent efficiency and reliability ` highest power levels in the market ` best-in-class ruggedness designed into all devices ` best broadband performance ` easy power control ` best-in-class design support ` low thermal resistance design for unrivalled reliability ` advanced flange material for optimum thermal behavior and reliability ` designed for broadband operation (470 to 860 mhz) key applications ` analog and digital tv transmitters brb339 typ. 0.5 kw dvb-t typ. 5 kw dvb-t output po we r tv exciter dvb-t driver stages amplifiers harmonic filter po we r monitor 8 final type product f min (mhz) f max (mhz) p1db (w) matching vds (v) p l (w) d (%) g p (db) test signal package blf642 driver 1 1400 35 - 32 35 63 19 cw sot4 67c blf884p(s) final 470 860 300 i 50 150 46 21 cw sot1121 blf879p 470 860 500 i 42 200 47 21 cw sot539a blf888a(s) 470 860 600 i 50 250 46 21 cw sot539 blf888b(s) 470 860 600 i 50 250 46 21 cw sot539 blf881(s) 1 1000 140 - 50 140 49 21 cw sot4 67
69 nxp semiconductors rf manual 16 th edition focus applications, products & technologies 2.5.6 setting the benchmark for ultra low-power and high-performance wireless connectivity solutions nxps jn5148/2 wireless microcontroller platform with chipsets, modules, and supporting software nxp provides a complete package for the development of ieee802.15.4-based wireless network solutions, incorporating all the necessary hardware and software components. nxps jn514x range of wireless microcontroller chips provides the optimum hardware platform for designing wireless network nodes that combine high-performance processing and radio communications. nxp also supplies jn514x wireless microcontrollers mounted on modules, and evaluation kits that simplify the development of custom applications. software a selection of network protocol stacks, based on the industry- standard ieee802.15.4, is available to support the wireless connectivity requirements of your application. these include jennet, jennet-ip, and zigbee pro, which are provided as a set of software libraries. jennet is suitable for all proprietary applications. zigbee pro is used for smart energy and other applications where zigbee interoperability is required. jennet-ip provides ipv6 connectivity to the end node and is rapidly emerging as a standard for lighting and automation applications in buildings. evaluation kit products ` jn5142-j01 for jennet-ip smart devices, jn5148-j01 for jennet-ip gateways ` jn5148-001 for jennet and ieee802.15.4, jn5142-001 for rf4ce and ieee802.15.4 ` jn5148-z01 for zigbee applications ` jn5148-001-m00, jn5148-001-m03, jn5148-001-m04: modules for jennet and ieee802.15.4 key features ` ultra low-power mcu together with an ieee802.15.4- compliant radio transceiver ` enhanced 32-bit risc processor for high performance and low power ` on-chip rom and ram for storage of application, networking stack , and software libraries ` a rich mix of analog and digital peripherals ` low-current solution for long battery-life ` standard-power and high-power modules ` software developers kit (sdk), including jennet, jennet-ip and zigbee networking stacks key applications ` smart lighting / smart energy / smart grid ` utilities metering ` home and commercial building automation and control ` remote control ` security systems ` location-aware services C eg asset management
70 nxp semiconductors rf manual 16 th edition a disruptive technology, setting new performance boundaries for rf power amplifiers if independent market research claims come true, gan product sales will exceed 300 musd in 2014. this can only happen if gan is made available through mainstream semiconductor companies, and nxp is the first to make this happen. so, what is it about gan and rf power applications ? simply put, gan makes a step increase in efficiency and power density performance over si ldmos in most applications. this can be quantified in the johnsons figure of merit (fom) C a combination of significant rf performance variables that has a baseline for si at 1 and leads to a fom for gan of 324. to put this into some context, gaas, another commonly used compound material in rf, has a fom of 1.44. with such a high fom rating, gan truly represents a breakthrough technology. gan products are termed high-electron mobility transistors (hemt), a name that captures one of the intrinsic benefits of gan: the high electron drift velocity. these transistors are depletion-mode devices, that is, devices that are normally on, without the need for applying a gate bias. a negative gate bias will be needed to switch the transistors off. this biasing is not straightforward, but at nxp, we've developed complete solutions (not just individual components) that include a tried and tested bias circuit. we also provide continuous application support throughout the life of the product. a further advantage of gan is that it is a very hard structure able to withstand very high temperatures. nxps gan transistors will be specified to a maximum temperature of 250 c, compared to 225 c for si ldmos. special packages are required to support such high temperatures. in this area, nxp's gan customers benefit from our 30-year legacy in rf power products, and our large industrial base. as a gan supplier, we deliver excellence in product reliability and cost, and give our customers a high degree of confidence in the supply chain. it's part of what's needed to take gan to the mainstream. the first nxp gan products will be unmatched broadband amplifiers for use in applications requiring high rf performance across a wide range of frequencies up to 3.5 ghz. nxps first generation gan process is designed for products operating from a 50v supply voltage, delivering best-in-class efficiency and linearity. the products will use industry-standard package footprints enabling customers to adopt nxps products into existing designs without changing the mechanical design. next-generation gan devices from nxp will be super-efficient, enabling a breakthrough in performance for the largest rf power market segment: cellular base stations. in turn this technology will enable a departure from linear amplifier topologies with the onset of switched mode power amplifier (smpa) concepts. nxps commitment to exploit the technology in a full portfolio of products will also lead to products for higher frequency applications up to 10 ghz. gan rf power amplifiers type f min (mhz) f max (mhz) p out (w) matching v ds (v) d (%) g p (db) test signal package planned release applications clf1g0035-50 0 3500 50 - 50 54 14.2 pulsed sot4 67 q312 cellular, wimax, ism, avionics, s-band, general purpose clf1g0035-100 0 3500 100 - 50 52 14.8 pulsed sot4 67 q412 cellular, wimax, ism, avionics, s-band, general purpose clf1g0035-200 0 3500 200 - 50 50 14.2 pulsed sot1228 q313 cellular, wimax, ism, avionics, s-band, general purpose clf1g0060-10 0 6000 10 - 50 54 14 pulsed sot1227 q113 cellular, wimax, ism, avionics, s-band, general purpose clf1g0060-30 0 6000 30 - 50 54 14 pulsed sot1227 q113 cellular, wimax, ism, avionics, s-band, general purpose clf2g2536 -10 0 2500 3600 100 i/o 28 65 13 pulsed sot1135 q413 cellular, wimax, s-band clf2g2536-300 2500 3600 300 i/o 28 65 13 pulsed sot502 q413 cellular, wimax, s-band clf3g4060-30 4000 6000 30 i/o 28 55 13 pulsed sot1135 q114 c-band clf3g4060-350 4000 6000 350 i/o 28 55 13 pulsed sot502 q114 c-band 2.6 technology 2.6.1 the first mainstream semiconductor company to offer gan products nxp galium-nitride (gan) broadband amplifiers
71 nxp semiconductors rf manual 16 th edition focus applications, products & technologies 2.6.2 completing nxp's rf power transistor offering: products in plastic packages (omp) nxp is currently developing a complete line of overmolded plastic (omp) rf power transistors and mmics with peak powers ranging from 3 to 500 w. the main benefit of plastic packages is cost effectiveness with little or no impact on performance. the range of plastic devices will complement the extensive range of rf power products that nxp offers in ceramic packages for all frequency ranges and applications up to 2.45 ghz. products in development ` single-stage broadband drivers in hsop-outlines, from 3 to 10 w ` single-stage omp drivers from 25 to 45 w, replacing their ceramic equivalents for cost-sensitive applications ` dual-stage mmics from 30 to 60 w that can be used as high-gain drivers or combined as low-power dual-stage doherty amplifiers ` fully integrated plug-and-play doherty pas in a single package (50 to 100 w) ` final transistors in omp package (sot502-sized) ranging from 140 to 200 w in frequency bands from 730 mhz to 2.2 ghz ` final transistors in omp package (sot502-sized) ranging from 3 to 500 w in ism frequency bands from a few mhz up to 2.45 ghz some of these products are available for sampling now, while the rest of the portfolio will be rolled out throughout 2012. type f min (mhz) f max (mhz) p1db (w) matching package description blp7g22-10 700 2200 10 - sot1179 gen7 omp ldmos transistor for wcdma & gsm applications blm7g22s-60pb(g) 2000 2200 60 i/o sot1212 gen7 ldmos mmic for wcdma applications (gull-wing) blp7g07s-140p(g) 700 900 140 o sot1224 gen7 omp push-pull ldmos transistor for gsm, wcdma & lte applications (gull-wing) blp7g09s-140p(g) 900 1000 140 o sot1224 gen7 omp push-pull ldmos transistor for gsm, wcdma & lte applications (gull-wing) rf power products in plastic packages (omp)
72 nxp semiconductors rf manual 16 th edition 2.6.3 looking for a leader in sige:c? you just found us! nxp qubic4 process technology nxp's innovative, high-performance sige:c qubic4 process lets customers implement more functions into less space, with the added benefits of competitive cost, superb reliability, and significant manufacturing advantages. our state-of-the-art qubic4 technology and extensive ip availability speed the migration from gaas components to silicon by enabling cutting-edge products with best-in-class low noise performance, linearity, power consumption, immunity to out-of-band signals, spurious performance, and output power. qubic is a mature process that has been in mass production since 2002 and has had continuous performance upgrades added ever since. the qubic4 process is automotive-qualified and dual-sourced in two high- volume, nxp-owned 8-inch waferfabs that provide flexible, low-cost manufacturing with high yields and very low ppm in the field. there are three qubic4 variants, each with its own benefits for specific application areas qubic4+ the qubic4+ bicmos process features 0.25 m cmos with 5 metal layers for integration of dense digital logic-based smart functionality, a rich set of active and passive devices for high-frequency mixed-signal designs, including thick top metal layers for high-quality inductors. the device set includes 35 ghz f t npns with 3.8 v breakdown voltage (bvce0) and low noise figure (nf < 1.1 db @ 2 ghz), 5 ghz f t vpnps, a 28 ghz high-voltage npn with 5.9 v breakdown voltage, differential and single-ended varicaps with q-factor > 30, scalable inductors with q-factor > 20, 800 mhz ft lateral pnps, 0.25 m cmos, 137, 220 & 12 to 2000 ohm/sq. poly and active resistors, a 270 ohm/sq. sicr thin film resistor, a 5.7 ff/m2 oxide capacitor and a 5 ff/m2 mim capacitor, 1 to 6 ff/m2 oxide capacitors and various other devices including l-pnps, isolated nmos, 3.3 v cmos and rf-cmos transistors capacitor. the qubic4+ process is silicon-based and ideal for applications up to 5 ghz (f t = 35 ghz, nf < 1.1 db @ 2 ghz), as well as for medium power amplifiers up to 33 dbm. qubic4x the qubic4x bicmos process is a sige:c-based extension of the qubic process for high-frequency mixed-signal designs and offers a rich set of devices, including a 110 ghz f t npn with 2.0 v breakdown voltage and very low noise figure (nf < 1.0 db @ 10 ghz), 0.25 m cmos, a variety of resistors, a 5.7 ff/m2 oxide capacitor, and a 5 ff/m2 mim capacitor. the qubic4x is ideal for applications that typically operate at up to 30 ghz (f t = 110 ghz , nf < 1.0 db @ 10 ghz) and ultra- low noise applications such as lnas and mixers. qubic4xi the qubic4xi bicmos process further enhances the qubic4x process and offers an additional feature set of devices for high- frequency mixed-signal designs. these include 180 ghz f t npns with 1.4 v breakdown voltage and ultra-low noise figure (nf < 0.7 db @ 10 ghz), 0.25 m cmos, several resistors, a 5.7 ff/m2 oxide capacitor and a 5 ff/m2 mim capacitor. qubic4xi represents the newest sige:c process, with improved f t (> 200 ghz) and even lower noise figure (nf < 0.6 db @ 10 ghz). it is ideal for applications beyond 30 ghz, such as lo generators.
73 nxp semiconductors rf manual 16 th edition focus applications, products & technologies features qubic4+ qubic4x qubic4xi release for production 2004 2006 2008 cmos/bipolar cmos 0.25 um, bipolar 0.4 um, double poly, deep trench, si cmos 0.25 um, bipolar lv 0.4 um, double poly, deep trench, sige:c cmos 0.25 um, bipolar lv 0.3 um, double poly, deep trench, sige:c lv npn f t /f max (ghz) 35/80 (si) 110/140 (sige:c) 180/200 (sige:c) hv npn f t /f max (ghz) 28/70 (si) 60/120 (sige:c) 90/200 (sige:c) npn bvce0: hv/lv ** 5.9 / 3.8 v 3.2 / 2.0 v 2.5 / 1.4 v v-pnp f t / bvcb0 (ghz / v) 5 / >9 planned planned cmos voltage / dual gate 2.5 / 3.3 v 2.5 v 2.5 v noise figure npn (db) 2 ghz: 1.1 10 ghz: 1.0 10 ghz: 0.6 rfcmos f t (ghz) nmos 58, pmos 19 nmos 58, pmos 19 nmos 58, pmos 19 isolation (60 db @ 10 ghz) sti and dti sti and dti sti and dti interconnection (alcu with cmp w plugs) 5 lm, 3 m top metal 5 lm, 3 m top metal 2 m m4 5 lm, 3 m top metal capacitors nw, dn, poly-poly 5ff/um2 mim nw, dn, poly-poly 5ff/um2 mim nw, dn, poly-poly 5ff/um2 mim resistors? (?/sq) poly (64/137/220/2k) active (12, 57), high-precision sicr (270) poly (64/220/330/2k), active (12, 57), high-precision sicr (tbd) poly (64/220/330/2k), active (12, 57), high-precision sicr (tbd) varicaps (single-ended? & differential) 1x single-ended, q > 40 3x differential, q 30-180 1x single-ended, q > 40 3x differential, q 30-180 1x single-ended, q > 40 3x differential, q 30-180 inductors? (1.5nh @ 2 ghz) - scalable q > 21, thick metal, deep trench isolation, high r substrate q > 21, thick metal, deep trench isolation, high r substrate q > 21, thick metal, deep trench isolation, high r substrate other devices lpnp, isolated nmos, vpnp, transformers isolated-nmos, transformers isolated-nmos, transformers mask count 32 (mim) / 34 / 33 (hvnpn) / 35 (vpnp) 36 (mim) 36 (mim) qubic4+ bicmos f /f max = 35/80 ghz +dg +tfr +vpnp +hvnpn -4ml sige:c f / f max = 110/140 ghz qubic4x sige:c f t t / f max = 180/200 ghz qubic4xi qubic4+ ` baseline, 0.25 m cmos, single poly, 5 metal ` digital gate density 26k gates/mm 2 ` f t /f max = 35/80 ghz ` +tfr C thin film resistor ` +dg C dual gate oxide mos ` +hvnpn C high voltage npn ` +vpnp C vertical pnp (high v early ) ` -4ml C high-density 5ff/m 2 mim capacitor ` wide range of active and high-quality passive devices ` optimized for up to 5 ghz applications qubic4x ` sige:c process ` f t /f max = 110/140 ghz ` optimized for applications up to 30 ghz qubic4xi ` sige:c process ` improves f t /f max up to 180/200 ghz ` optimized for ultra-low noise microwave above 30 ghz
74 nxp semiconductors rf manual 16 th edition 2.6.4 high-performance, small-size packaging enabled by nxp's leadless package platform and wl-csp technology rf small-signal packaging is driven by two major trends which partly overlap ` lower parasitics for better rf performance ` smaller form factors for portable applications to cope with these trends, nxp uses several approaches ` for non-space-restricted applications the use of flat-pack packages instead of gull-wing versions reduces the parasitic impedance because of shorter lead length (e.g. sot343f instead of sot343). this results in better rf performance in the ku and ka bands (13-20ghz). to reduce pcb board space, a smaller version (sot1206) is also available. sot343 sot343f sot1206 ` for space-restricted applications there are two routes to reduce the form factor and parasitics: - leadless package platform - wafer level chip scale package (wl-csp) technology the leadless package (utlp) platform (>25 variants already released) is highly flexible with respect to package size, package height, and i/o pitch. for example, the 6-pin packages range in size from 1.45 x 1 x 0.5 mm with 0.5 mm pitch to 0.8 x 0.8 x 0.35 mm with 0.3 mm pitch. package height of 0.25 mm is planned. because of the compact size of the design, wire lengths and parasitic impedance are also restricted. the absence of leads further reduces the inductance. wafer level chip scale package technology is ideally for rf functions where the i/o pitch has to fit within the chip area. with larger pitches and smaller designs (and thus little effective chip area), it is more cost-effective to do the fan-out using a leadless package instead of increasing the chip size. the absence of wires gives the lowest parasitic inductance available. sot886 sot891 sot1208 0.65 x 0.44 x 0.29 mm (incl. 0.09 mm balls) 5 i/os @ 0.22 mm pitch
75 nxp semiconductors rf manual 16 th edition products by function 3. products by function nxp rf product catalog: http://www.nxp.com/rf 3.1 new products dev = in development cqs = customer qualification samples rfs = release for supply type application / description expected status june 2012 planned release section new: wideband transistors bfu730lx gen7 wideband transistor rfs released 3.3.1 new: sige:c lnas (for e.g. gps) bgu8007 gps lna, 19.0 db gain, aec-q100 rfs released 3.4.1 bgu7003w general-purpose unmatched lna for fm radio rfs released 3.4.1 bgu6101 unmatched wideband mmic w/ bias enable function & wide range of supply voltage rfs released 3.4.1 bgu6102 unmatched wideband mmic w/ bias enable function & wide range of supply voltage rfs released 3.4.1 bgu6104 unmatched wideband mmic w/ bias enable function & wide range of supply voltage rfs released 3.4.1 new: lnas for set-top boxes bgu7044 lna for stb tuning rfs released 3.4.1 bgu7045 lna for stb tuning rfs released 3.4.1 new: general-purpose wideband amplifiers (50 ? gain blocks) bga2874 if gain block 30.5 db, 2.5 v rfs released 3.4.1 bga2817 if gain block 24 db, 3 v rfs released 3.4.1 bga2818 if gain block 31 db, 3 v rfs released 3.4.1 bga2851 if gain block 25 db, 5 v rfs released 3.4.1 bga2867 if gain block 27 db, 5 v rfs released 3.4.1 bga2869 if gain block 32.5 db, 5 v rfs released 3.4.1 new: medium power amplifier mmics bga7014 medium power amplifier, 12.0 db ,13.0 dbm p1db, sot89 dev q4 2012 3.4.1 bga7017 medium power amplifier, 13.5 db, 16.5 dbm p1db, sot89 dev q4 2012 3.4.1 bga7020 medium power amplifier, 13.0 db, 18.5 dbm p1db, sot89 dev q4 2012 3.4.1 bga7130 medium power amplifier, 18.0 db, 30 dbm p1db, sot908 rfs released 3.4.1 new: vgas for wireless infrastructures bga7351 50 mhz to 250 mhz high linearity variable gain amplifier - 28 db gain range rfs released 3.4.1 bga7210 400 mhz to 2750 mhz high linearity variable gain amplifier rfs released 3.4.1 bga7204 700 mhz to 3800 mhz high linearity variable gain amplifier rfs released 3.4.1 new: lnas for wireless infrastructures bgu7051 lna 900 mhz - from 0.5 to 1.5 ghz rfs released 3.4.1 bgu7052 lna 1.9 ghz - from 1.5 to 2.5 ghz rfs released 3.4.1 bgu7053 lna 2.5 ghz - from 2.3 to 2.8 ghz rfs released 3.4.1 bgu7060 lna with variable gain from 700 to 800 mhz rfs released 3.4.1 bgu7061 lna with variable gain from 700 to 950 mhz rfs released 3.4.1 bgu7062 lna with variable gain from 1710 to 1785 mhz rfs released 3.4.1 bgu7063 lna with variable gain from 1920 to 1980 mhz rfs released 3.4.1
76 nxp semiconductors rf manual 16 th edition type application / description expected status june 2012 planned release section new: pll + vco (lo generator) for wireless infrastructures bgx7300 rx lo generator, 400 mhz to 3 ghz dev q4 2012 3.4.2 new: iq modulators for wireless infrastructures bgx7100 iq modulator, ouput power 0 dbm rfs released 3.4.2 bgx7101 iq modulator, ouput power 4 dbm rfs released 3.4.2 new: dual mixers for wireless infrastructures bgx7220 dual mixer, nf 8 db, iip3 30 dbm, p < 1 w, 700 mhz to 1.2 ghz rfs released 3.4.2 bgx7221 dual mixer, nf 10 db, iip3 23 dbm, p < 1 w, 1.7ghz to 2.7 ghz rfs released 3.4.2 new: rf power transistors for base stations blf6g15l(s)-40rn gen6 ceramic driver ldmos transistor for gsm, wcdma & lte applications rfs released 3 .7.1 blf6h10l(s)-160 gen6 ceramic high-voltage ldmos transistor for gsm, wcdma & lte applications dev q312 3 .7.1 blf7g20ls-260a gen7 ceramic asymmetrical doherty ldmos transistor for gsm & lte applications dev q412 3 .7.1 blf7g24l(s)-160p gen7 ceramic push-pull ldmos transistor for wcdma & lte applications rfs released 3 .7.1 blf7g27ls-90pg gen7 ceramic push-pull ldmos transistor for wcdma & lte applications (gull-wing) rfs released 3 .7.1 blf8g10l(s)-160v gen8 ceramic ldmos transistor for gsm, wcdma & lte applications rfs released 3 .7.1 blf8g10ls-200gv gen8 ceramic ldmos transistor for gsm, wcdma & lte applications (gull-wing) dev q412 3 .7.1 blf8g10ls-270gv gen8 ceramic ldmos transistor for gsm, wcdma & lte applications (gull-wing) dev q412 3 .7.1 blf8g10l(s)-300p gen8 ceramic push-pull ldmos transistor for gsm, wcdma & lte applications (gull-wing) dev q312 3 .7.1 blf8g10ls-400pgv gen8 ceramic push-pull ldmos transistor for gsm, wcdma & lte applications (gull-wing) dev q412 3 .7.1 blf8g20l(s)-200v gen8 ceramic ldmos transistor for gsm & lte applications rfs released 3 .7.1 blf8g20ls-270gv gen8 ceramic ldmos transistor for gsm & lte applications (gull-wing) dev q412 3 .7.1 blf8g20ls-270pgv gen8 ceramic push-pull ldmos transistor for gsm & lte applications (gull-wing) dev q412 3 .7.1 blf8g22ls-160bv gen8 ceramic ldmos transistor for wcdma & lte applications rfs released 3 .7.1 blf8g22ls-200gv gen8 ceramic ldmos transistor for wcdma & lte applications (gull-wing) dev q312 3 .7.1 blf8g22ls-270gv gen8 ceramic ldmos transistor for wcdma & lte applications (gull-wing) dev q312 3 .7.1 blf8g22ls-400pgv gen8 ceramic push-pull ldmos transistor for wcdma & lte applications (gull-wing) dev q312 3 .7.1 blf8g24l(s)-200p gen8 ceramic push-pull ldmos transistor for wcdma & lte applications dev q312 3 .7.1 blf8g27ls-140g gen8 ceramic ldmos transistor for wcdma & lte applications (gull-wing) dev q412 3 .7.1 blf8g27ls-140v gen8 ceramic ldmos transistor for wcdma & lte applications dev q412 3 .7.1 blf8g27ls-200pgv gen8 ceramic push-pull ldmos transistor for wcdma & lte applications (gull-wing) dev q412 3 .7.1 blf8g27ls-280pgv gen8 ceramic push-pull ldmos transistor for wcdma & lte applications (gull-wing) dev q412 3 .7.1 blm7g22s-60pb(g) gen7 ldmos mmic for wcdma applications (gull-wing) dev q312 3 .7.1 blp7g07s-140p(g) gen7 omp push-pull ldmos transistor for gsm, wcdma & lte applications (gull-wing) dev q412 3 .7.1 blp7g09s-140p(g) gen7 omp push-pull ldmos transistor for gsm, wcdma & lte applications (gull-wing) dev q412 3 .7.1 blp7g22-10 gen7 omp ldmos transistor for wcdma & gsm applications dev q312 3 .7.1 new: rf power transistors for broadcast / ism applications blf174xr(s) xr ceramic push-pull ldmos transistor for ism applications dev q312 3 .7. 2 blf178xr(s) xr ceramic push-pull ldmos transistor for fm broadcast & ism applications rfs released 3 .7. 2 blf2425m6l(s)180p gen6 ceramic push-pull ldmos transistor for 2.45 ghz ism applications dev q312 3 .7. 2 blf2425m7l(s)140 gen7 ceramic ldmos transistor for 2.45ghz ism applications rfs released 3 .7. 2 blf2425m7l(s)200 gen7 ceramic ldmos transistor for 2.45ghz ism applications dev q412 3 .7. 2 blf2425m7l(s)250p gen7 ceramic push-pull ldmos transistor for 2.45 ghz ism applications rfs released 3 .7. 2 blf25m612(g) gen6 ceramic ldmos driver transistor for 2.45 ghz ism applications (gull-wing) dev q312 3 .7. 2 blf572xr(s) xr ceramic push-pull ldmos transistor for ism applications dev q412 3 .7. 2 blf574xr(s) xr ceramic push-pull ldmos transistor for ism applications dev q312 3 .7. 2 blf578xr(s) xr ceramic push-pull ldmos transistor for uhf broadcast & ism applications rfs released 3 .7. 2 blf647p(s) ceramic push-pull ldmos transistor for broadband applications dev q312 3 .7. 2
77 nxp semiconductors rf manual 16 th edition products by function type application / description expected status june 2012 planned release section new: rf power transistors for aerospace and defense bll6g1214ls-250 gen6 ceramic ldmos transistor for l-band applications rfs released 3 .7. 3 bll6h1214ls-500 gen6 high-voltage ceramic ldmos transistor for l-band applications dev q412 3 .7. 3 bls6g2735l(s)-30 gen6 ceramic ldmos driver transistor for s-band radar applications rfs released 3 .7. 3 bls7g2729l(s)-350p gen7 ceramic push-pull ldmos transistor for s-band radar applications rfs released 3 .7. 3 bls7g3135l(s)-350p gen7 ceramic push-pull ldmos transistor for s-band radar applications dev q412 3 .7. 3 blu6h0410l(s)-600p gen6 high-voltage ceramic push-pull ldmos transistor for uhf band radar applications rfs released 3 .7. 3 new: gallium nitride (gan) rf power amplifiers clf1g0060-10 gen1 gan broadband amplifier dev q113 3 .7. 4 clf1g0060-30 gen1 gan broadband amplifier dev q113 3 .7. 4 clf1g0035-50 gen1 gan broadband amplifier dev q312 3 .7. 4 clf1g0035-100 gen1 gan broadband amplifier dev q412 3 .7. 4 new: low-power wireless microcontrollers and networking stacks jn5142-j01 jennet-ip rfs released 3.8 jn5142-001 rf4ce / ieee802.15.4 rfs released 3.8 jn5148-j01 jennet-ip rfs released 3.8 jn5148-001 jennet / ieee802.15.4 rfs released 3.8 jn5148-z01 zigbee rfs released 3.8 jn5148-001-m00 jennet / ieee802.15.4 rfs released 3.8 jn5148-001-m03 jennet / ieee802.15.4 rfs released 3.8 jn5148-001-m04 jennet / ieee802.15.4 rfs released 3.8 jennet networking stack rfs released 3.8 jennet-ip networking stack rfs released 3.8 zigbee pro networking stack rfs released 3.8
78 nxp semiconductors rf manual 16 th edition 3.2 rf diodes 3.2.1 varicap diodes why choose nxps varicap diodes: ` reference designs for tv and radio tuning ` direct matching process ` small tolerances ` short lead time ` complete portfolio covering broad range of frequencies and packages (including leadless) ` reliable volume supply vco and fm radio tuning varicap diodes type package number of diodes config- uration @ f = 1 mhz r s typ r s max @ f = c d min c d typ c d max @ v r = c d min c d typ c d max @ v r = c d1 / c d2 min c d1 / c d2 max @ v1 = @ v2 = (pf) (pf) (pf) (v) (pf) (pf) (pf) (v) (v) (v) () () (mhz) bb145b sod523 1 sg 6.4 - 7. 2 1 2.55 - 2.95 4 2.2 - 1 4 - 0.6 470 bb156 sod323 1 sg 14.4 16 17. 6 1 4.2 4.8 5.4 7. 5 2.7 3.9 1 7. 5 0.4 0.7 470 bb198 sod523 1 sg 25 - 28.5 1 4.8 - 6.8 4 - - - - - 0.8 100 bb199 sod523 1 sg 36.5 - 42.5 0.5 11.8 - 13.8 2 2.8 - 0.5 2 0.25 - 100 bb201 sot23 2 cc 89 95 102 1 25.5 2 7. 6 29.7 7. 5 3.1 3.8 1 7. 5 0.25 0.5 100 bb202^^ sod523 1 sg 28.2 - 33.5 0.2 7. 2 - 11.2 2.3 2.5 - 0.2 2.3 0.35 0.6 100 bb207^ sot23 2 cc 76 81 86 1 25.5 2 7. 6 29.7 7. 5 2.6 3.3 1 7. 5 0.2 0.4 100 bb208-02^ sod523 1 sg 19.9 - 23.2 1 4.5 - 5.4 7. 5 3.7 5.2 1 7. 5 0.35 0.5 100 bb208-03^ sod323 1 sg 19.9 - 23.2 1 4.5 - 5.4 7. 5 3.7 5.2 1 7. 5 0.35 0.5 100 ^ includes special design for fm car radio (crest-ic:tef6860) type of connection: cc: common cathode ^^ includes special design for mobile phone tuner ics sg: single tv / vcr / dvd / hdd varicap diodes - uhf tuning type package @ f = 1 mhz r s typ r s max @ f = @ c d = ? c d / c d @ v 1 = @ v 2 = @ n s = c d min c d typ c d max @ v r = c d1 /c d2 min c d1 /c d2 typ c d1 /c d2 max @ v 1 = @ v 2 = (pf) (pf) (pf) (v) (v) (v) () () (mhz) (pf) (v) (v) matched bb149 sod323 1.9 2.1 2.25 28 8.2 9 10 1 28 - 0.75 470 9 2 0.5 28 10 bb149a sod323 1.951 2.1 2.225 28 8.45 9 10.9 1 28 0.6 0.75 470 9 2 1 28 10 bb179 sod523 1.951 2.1 2.225 28 8.45 9 10.9 1 28 0.6 0.75 470 9 2 1 28 10 bb179b sod523 1.9 2.1 2.25 28 8.45 9 10 1 28 0.6 0.75 470 9 2 1 28 10 bb179blx sod882d 1.9 - 2.25 28 - 9 - 1 28 0.65 - 470 9 2 1 28 10 bb179l x sod882d 1.95 2.1 2.22 28 8.45 9 10.9 1 28 0.65 - 470 30 2 1 28 5 bb184 sod523 1.87 2 2.13 10 6 7 - 1 10 0.65 - 470 9 2 1 10 5 bb189 sod523 1.89 2.04 2.18 25 6.3 7. 3 - 2 25 0.65 0.7 470 9 1.8 2 25 10 unmatched bb135 sod323 1.7 - 2.1 28 8.9 - 12 0.5 28 - 0.75 470 9 - - - - bold = highly recommended product varicap selection guide on www.nxp.com/varicaps easy-to-use parametric filters help you choose the right varicap for your design.
79 nxp semiconductors rf manual 16 th edition products by function tv / vcr / dvd / hdd varicap diodes - vhf tuning type package @ f = 1 mhz r s typ r s max @ f = @ c d = ? c d / c d @ v 1 = @ v 2 = @ n s = c d min c d typ c d max @ v r = c d1 / c d2 min c d1 / c d2 typ c d1 / c d2 max @ v 1 = @ v 2 = (pf) (pf) (pf) (v) (v) (v) () () (mhz) (pf) (v) (v) matched bb148 sod323 2.4 2.6 2.75 28 14.5 15 - 1 28 - 0.9 100 12 2 0.5 28 10 bb152 sod323 2.48 2.7 2.89 28 20.6 22 - 1 28 1 1.2 100 30 2 1 28 10 bb153 sod323 2.361 2.6 2.754 28 13.5 15 - 1 28 0.65 0.8 100 30 2 1 28 10 bb178 sod523 2.361 2.6 2.754 28 13.5 15 - 1 28 0.65 0.8 100 30 2 1 28 10 bb178l x sod882d 2.36 2.6 2.75 28 13.5 15 - 1 28 0.7 - 470 30 2 1 28 5 bb182 sod523 2.48 2.7 2.89 28 20.6 22 - 1 28 1 1.2 100 30 2 1 28 10 bb187 sod523 2.57 2.75 2.92 25 11 - - 2 25 - 0.75 470 - 2 2 25 10 bb187lx sod882d 2.57 2.75 2.92 25 11 - - 2 25 - 0.75 470 - 2 2 25 10 unmatched bb131 sod323 0.7 - 1.055 28 12 - 16 0.5 28 - 3 470 9 - - - - bb181 sod523 0.7 - 1.055 28 12 - 16 0.5 28 - 3 470 9 - - - - bby40 sot23 4.3 - 6 25 5 - 6.5 3 25 - 0.7 200 25 - - - - 3.2.2 pin diodes why choose nxps pin diodes: ` broad portfolio ` unrivalled performance ` short lead time ` low series inductance ` low insertion loss ` low capacitance pin diodes : typical r d @ 1 ma 2, switching diodes type package number of diodes config v r max (v) if max (ma) @ f = 100 mhz @ f = 1 mhz @ if = 0.5 ma @ if = 1 ma @ if = 10 ma @ v r = 0 v @ v r = 1 v @ v r = 20 v r d typ () r d max () r d typ () r d max () r d typ () r d max () c d typ (pf) c d typ (pf) c d max (pf) c d typ (pf) c d max (pf) bap65lx sod882d 1 sg 30 100 - - 0.94 - 0.49 0.9 0.61 0.48 0.85 0.37 - bap65-02 sod523 1 sg 30 100 - - 1 - 0.56 0.9 0.65 0.55 0.9 0.375 - bap65-03 sod323 1 sg 30 100 - - 1 - 0.56 0.9 0.65 0.55 0.9 0.375 - bap65-05 sot23 2 cc 30 100 - - 1 - 0.56 0.9 0.7 0.575 0.9 0.425 - bap65-05w sot323 2 cc 30 100 - - 1 - 0.56 0.9 0.7 0.575 0.9 0.425 - bap63lx sod882d 1 sg 50 100 2.3 3.3 1.87 3 1.19 1.8 0.34 0.29 - 0.24 0.3 bap63-02 sod523 1 sg 50 100 2.5 3.5 1.95 3 1.17 1.8 0.36 0.32 - 0.25 0.32 bap63-03 sod323 1 sg 50 100 2.5 3.5 1.95 3 1.17 1.8 0.4 0.35 - 0.27 0.32 bap63-05w sot323 2 cc 50 100 2.5 3.5 1.95 3 1.17 1.8 0.4 0.35 - 0.3 0.35 pin diode selection guide on www.nxp.com/pindiodes easy-to-use parametric filters help you choose the right pin diode for your design. brb407 r d () 10 ?1 10 2 10 1 200 100 600 500 400 300 700 c d (ff) 0 bap65lx bap65lx bap50lx bap63lx bap63lx bap1321lx bap51lx bap142lx bap64lx bap1321lx bap51lx bap142lx bap50lx bap64lx bap70-02 bap70-02 freq = 100 mhz, c d @ v r = 0 v rd @ 0.5 ma rd @ 10 ma brb408 insertion loss (db) 10 ?2 10 1 10 ?1 10 15 5 20 25 isolation (db) 0 bap51lx bap70-20 bap50lx bap64lx bap51lx bap142lx bap1321lx bap63lx bap65lx bap65lx bap63lx bap1321lx bap142lx bap64lx bap50lx bap70-02 freq = 1800 mhz, isolation @ v r = 0 v insertion loss @ 0.5 ma insertion loss @ 10 ma for more information: www.nxp.com/pindiodes pin diode: selection on isolation and insertion loss in sod882d type isl (isolation ) il (insertion loss) f = 900 mhz f = 1800 mhz f = 2450 mhz f = 900 mhz f = 1800 mhz f = 2450 mhz vr = 0 v vr = 0 v vr = 0 v if = 0.5 ma if = 1 ma if = 10 ma if = 100 ma if = 0.5 ma if = 1 ma if = 10 ma if = 100 ma if = 0.5 ma if = 1 ma if = 10 ma if = 100 ma bap65lx 10 5.5 3.9 0.09 0.06 0.06 0.05 0.09 0.07 0.07 0.06 0.10 0.08 0.08 0.07 bap63lx 15.9 10.5 8.3 0.20 0.17 0.12 0.11 0.20 0.17 0.13 0.11 0.21 0.19 0.15 0.15 bap55lx 19 14 12 0.24 0.17 0.08 0.05 0.25 0.18 0.09 0.07 0.26 0.19 0.10 0.08 bap1321l x 17 12 10 0.25 0.19 0.11 0.09 0.26 0.20 0.13 0.11 0.27 0.21 0.14 0.12 bap142lx 18 13 11 0.24 0.18 0.10 0.07 0.24 0.19 0.11 0.09 0.25 0.25 0.12 0.10 bap51l x 19 15 13 0.36 0.25 0.12 0.90 0.36 0.26 0.14 0.10 0.38 0.27 0.15 0.12 bap64lx 22 16 14 1.22 0.22 0.12 0.09 1.21 0.23 0.13 0.10 1.22 0.24 0.15 0.11 bap50lx 20.3 17.9 16.5 1.82 1.07 0.25 - 1.80 1.06 0.26 - 1.81 1.08 0.27 - bold = highly recommended product
80 nxp semiconductors rf manual 16 th edition pin diodes : typical r d @ 1 ma = 2.2 - 2.4, switching diodes type package number of diodes config v r max (v) if max (ma) @ f = 100 mhz @ f = 1 mhz @ if = 0.5 ma @ if = 1 ma @ if = 10 ma @ v r = 0 v @ v r = 1 v @ v r = 20 v r d typ () r d max () r d typ () r d max () r d typ () r d max () c d typ (pf) c d typ (pf) c d max (pf) c d typ (pf) c d max (pf) bap55lx sod882d 1 sg 50 100 3.3 4.5 2.2 3.3 0.8 1.2 0.28 0.23 - 0.18 0.28 bap1321-02 sod523 1 sg 60 100 3.4 5 2.4 3.6 1.2 1.8 0.4 0.35 0.45 0.25 0.32 bap1321-03 sod323 1 sg 60 100 3.4 5 2.4 3.6 1.2 1.8 0.4 0.35 0.45 0.25 0.32 bap1321-04 sot23 2 sr 60 100 3.4 5 2.4 3.6 1.2 1.8 0.42 0.375 0.45 0.275 0.325 bap1321l x sod882d 1 sg 60 100 3.3 5 2.4 3.6 1.2 1.8 0.32 0.27 0.38 0.21 0.28 bap142l x sod882d 1 sg 50 100 3.3 5 2.4 3.6 1 1.8 0.25 0.22 - 0.16 0.26 pin diodes : typical r d @ 1 ma = 3.2 - 3.6, switching diodes type package number of diodes config v r max (v) if max (ma) @ f = 100 mhz @ f = 1 mhz @ if = 0.5 ma @ if = 1 ma @ if = 10 ma @ v r = 0 v @ v r = 1 v @ v r = 20 v r d typ () r d max () r d typ () r d max () r d typ () r d max () c d typ (pf) c d typ (pf) c d max (pf) c d typ (pf) c d max (pf) bap51lx sod882d 1 sg 60 100 4.9 9 3.2 6.5 1.4 2.5 0.3 0.22 0.4 0.17 0.3 bap51-02 sod523 1 sg 60 50 5.5 9 3.6 6.5 1.5 2.5 0.4 0.3 0.55 0.2 0.35 bap51-03 sod323 1 sg 50 50 5.5 9 3.6 6.5 1.5 2.5 0.4 0.3 0.55 0.2 0.35 bap51-04w sot323 2 sr 50 50 5.5 9 3.6 6.5 1.5 2.5 0.4 0.3 0.55 0.2 0.35 bap51-05w sot323 2 cc 50 50 5.5 9 3.6 6.5 1.5 2.5 0.4 0.3 0.55 0.2 0.35 bap51-06w sot323 2 ca 50 50 5.5 - 3.6 - 2 - 0.4 0.3 - 0.2 - pin diodes : typical r d @ 1 ma = 10, attenuator/switching diodes type package number of diodes config v r max (v) if max (ma) @ f = 100 mhz @ f = 1 mhz @ if = 0.5 ma @ if = 1 ma @ if = 10 ma @ v r = 0 v @ v r = 1 v @ v r = 20 v r d typ () r d max () r d typ () r d max () r d typ () r d max () c d typ (pf) c d typ (pf) c d max (pf) c d typ (pf) c d max (pf) bap64q sot753 4 sr 100 100 20 40 10 20 2 3,8 0.52 0.37 - 0.23 0.35 bap64-02 sod523 1 sg 175 100 20 40 10 20 2 3.8 0.48 0.35 - 0.23 0.35 bap64-03 sod323 1 sg 175 100 20 40 10 20 2 3.8 0.48 0.35 - 0.23 0.35 bap64-04 sot23 2 sr 175 100 20 40 10 20 2 3.8 0.52 0.37 - 0.23 0.35 bap64-04w sot323 2 sr 100 100 20 40 10 20 2 3.8 0.52 0.37 - 0.23 0.35 bap64-05 sot23 2 cc 175 100 20 40 10 20 2 3.8 0.52 0.37 - 0.23 0.35 bap64-05w sot323 2 cc 100 100 20 40 10 20 2 3.8 0.52 0.37 - 0.23 0.35 bap64-06 sot23 2 ca 175 100 20 40 10 20 2 3.8 0.52 0.37 - 0.23 0.35 bap64-06w sot323 2 ca 100 100 20 40 10 20 2 3.8 0.52 0.37 - 0.23 0.35 bap64l x^ sod882d 1 sg 60 100 31 50 16 26 2.6 4.4 0.48 0.34 - 0.17* 0.3* ^ = attenuator / switching diode *= @ vr = 20 v pin diodes : typical r d @ 1 ma = 14 - 16, attenuator diodes type package number of diodes config v r max (v) if max (ma) @ f = 100 mhz @ f = 1 mhz @ if = 0.5 ma @ if = 1 ma @ if = 10 ma @ v r = 0 v @ v r = 1 v @ v r = 5 v r d typ () r d max () r d typ () r d max () r d typ () r d max () c d typ (pf) c d typ (pf) c d max (pf) c d typ (pf) c d max (pf) bap50-02 sod523 1 sg 50 50 25 40 14 25 3 5 0.4 0.3 0.55 0.22 0.35 bap50-03 sod323 1 sg 50 50 25 40 14 25 3 5 0.4 0.3 0.55 0.2 0.35 bap50-04 sot23 2 sr 50 50 25 40 14 25 3 5 0.45 0.35 0.6 0.3 0.5 bap50-04w sot323 2 sr 50 50 25 40 14 25 3 5 0.45 0.35 0.6 0.3 0.5 bap50-05 sot23 2 cc 50 50 25 40 14 25 3 5 0.45 0.3 0.5 0.35 0.6 bap50-05w sot323 2 cc 50 50 25 40 14 25 3 5 0.45 0.35 0.6 0.3 0.5 bap50lx sod882d 1 sg 50 50 26 40 14 25 3 5 0.4 0.28 0.55 0.19 0.35 pin diodes : typical r d @ 1 ma = 40, attenuator diodes type package number of diodes config v r max (v) if max (ma) @ f = 100 mhz @ f = 1 mhz @ if = 0.5 ma @ if = 1 ma @ if = 10 ma @ v r = 0 v @ v r = 1 v @ v r = 20 v r d typ () r d max () r d typ () r d max () r d typ () r d max () c d typ (pf) c d typ (pf) c d max (pf) c d max (pf) c d typ (pf) bap70q sot753 4 sr 50 100 77 100 40 50 5.4 7 0.6 0.43 - 0.25 0.3 bap70-02 sod523 1 sg 50 100 77 100 40 50 5.4 7 0.57 0.4 - 0.2 0.25 bap70-03 sod323 1 sg 50 100 77 100 40 50 5.4 7 0.57 0.4 - 0.2 0.25 bap70-04w sot323 2 sr 50 100 77 100 40 50 5.4 7 0.6 0.43 - 0.25 0.3 bap70-05 sot23 2 cc 50 100 77 100 40 50 5.4 7 0.6 0.43 - 0.25 0.3 bap70am sot363 4 sr 50 100 77 100 40 50 5.4 7 0.57 0.4 - 0.2 0.25 bold = highly recommended product sg = single cc = common cathode sr = series ca = common anode
81 nxp semiconductors rf manual 16 th edition products by function 3.2.3 band-switch diodes why choose nxps band-switch diodes: ` reliable volume supplier ` short lead time ` low series inductance ` low insertion loss ` low capacitance ` high reverse isolation type package v r max (v) if max (ma) r d max () @ if = (ma) @ f = (mhz) c d max (pf) @ v r = (v) @ f = (mhz) ba277 sod523 35 100 0.7 2 100 1.2 6 1 ba591 sod323 35 100 0.7 3 100 0.9 3 1 ba891 sod523 35 100 0.7 3 100 0.9 3 1 bat18 sot23 35 100 0.7 5 200 1 20 1 3.2.4 schottky diodes why choose nxps schottky diodes: ` low diode capacitance ` low forward voltage ` single- and triple-isolated diode ` small package applications ` digital applications: - ultra high-speed switching - clamping circuits ` rf applications: - diode ring mixer - rf detector - rf voltage doubler low-capacitance schottky diodes type package configuration v r max. (v) i f max. (ma) v f max. (mv) c d max. (pf) bat17 sot23 single 4 30 450 @ if = 1 ma 1 @ vr = 0 v pmbd353 sot23 dual-series 4 30 450 @ if = 1 ma 1 @ vr = 0 v pmbd354^ sot23 dual-series 4 30 450 @ if = 1 ma 1 @ vr = 0 v 1ps76sb17 sod323 single 4 30 450 @ if = 1 ma 1 @ vr = 0 v 1ps66sb17 sot666 triple-isolated 4 30 450 @ if = 1 ma 1 @ vr = 0 v 1ps79sb17 sod523 single 4 30 450 @ if = 1 ma 1 @ vr = 0 v 1ps88sb82 sot363 triple-isolated 15 30 340 @ if = 1 ma 1 @ vr = 0 v 1ps70sb82 sot323 single 15 30 340 @ if = 1 ma 1 @ vr = 0 v 1ps70sb84 sot323 dual-series 15 30 340 @ if = 1 ma 1 @ vr = 0 v 1ps70sb85 sot323 dual c.c 15 30 340 @ if = 1 ma 1 @ vr = 0 v 1ps70sb86 sot323 dual c.a. 15 30 340 @ if = 1 ma 1 @ vr = 0 v 1ps66sb82 sot666 triple-isolated 15 30 340 @ if = 1 ma 1 @ vr = 0 v 1ps10sb82 sod882 single 15 30 340 @ if = 1 ma 1 @ vr = 0 v bold = highly recommended product ^ diodes have matched capacitance schottky diode selection guide on www.nxp.com/rfschottkydiodes easy-to-use parametric filters help you choose the right schottky diode for your design.
82 nxp semiconductors rf manual 16 th edition 3.3 rf bipolar transistors 3.3.1 wideband transistors why choose nxps wideband transistors: ` broad portfolio (1 st - 7 th generation) ` short lead time ` smallest packages ` volume delivery wideband transistors line-up per frequency wideband transistors the f t -i c curve represents transition frequency (f t ) characteristics as a function of collector current (i c ) for the seven generations of rf wideband transistors. a group of transistors having the same i c and similar f t represents a curve. the curve number matches with products in the selection tables of this section (third column of each table), detailing their rf characteristics. rf wideband transistor selection guide on www.nxp.com/rftransistors easy-to-use parametric filters help you choose the right rf wideband transistor for your design. pin description type (figure 1) 1 collector 2 base 3 emitter 4 emitter type/x (figure 1) 1 collector 2 emitter 3 base 4 emitter type/xr (figure 2) 1 collector 2 emitter 3 base 4 emitter 12 34 21 34 figure 1 figure 2 bra510 100 10 1 f t (ghz) 0.1 0.5 12 51 02 05 0 100 200 500 1000 i c (ma) 0.2 (1) (3) (7) (9) 1 st generation 2 nd generation 3 rd generation 4 th generation 5 th generation 7 th generation 6 th generation (8) (10) (18) (15) (16) (20) (21) (22) (23) (29) (37) (35) (39) (41) (38) (40) (34) (36) (32) (33) (26) (27) (25) (30) (31) (11) (12) (4) (14) (19)
83 nxp semiconductors rf manual 16 th edition products by function rf power transistors for portable equipment (vhf) type package v ceo (max) (v) i c (max) (ma) p tot (max) (mw) polarity gum (typ) (db) @ f = (mhz) @ i c = (ma) @ v ce = (v) bfg10 sot143 8 250 400 npn 7 1900 1 3.6 bfg10/x sot143 8 250 400 npn 7 1900 1 3.6 bfg10w/x sot343 10 250 400 npn 7 1900 1 3.6 blt50 sot223 10 500 2000 npn - - - - blt70 sot223h 8 250 2100 npn - - - - blt80 sot223 10 250 2000 npn - - - - blt81 sot223 9.5 500 2000 npn - - - - rf wideband transistors generations 1 to 3 type generation curve package f t (typ) (ghz) v ceo (max) (v) i c (max) (ma) p tot (max) (mw) polarity gum (typ) (db) @ f = (mhz) @ i c = (ma) @ v ce = (v) gum (typ) (db) @ f = (mhz) @ i c = (ma) @ v ce = (v) nf (typ) (db) @ f = (mhz) @ i c = (ma) @ v ce = (v) nf (typ) (db) @ f = (mhz) @ i c = (ma) @ v ce = (v) bfs17 1 3 sot23 1 15 25 300 npn - - - - - - - - 4.5 500 2 5 - - - - BFS17W 1 3 sot323 1.6 15 50 300 npn - - - - - - - - 4.5 500 2 5 - - - - bft25 1 1 sot23 2.3 5 6.5 30 npn 18 500 1 1 12 800 1 1 3.8 500 1 1 - - - - bfg25a/x 2 18 sot143b 5 5 6.5 32 npn - - - - 18 1000 0.5 1 1.8 1000 0.5 1 - - - - bfg25aw 2 18 sot343n 5 5 6.5 500 npn - - - - 16 2000 0.5 1 2 1000 1 1 - - - - bfg25aw/x 2 18 sot343n 5 5 6.5 500 npn 16 1000 0.5 1 8 2000 0.5 1 2 1000 1 1 - - - - bfg31 2 10 sot223 5 -15 -10 0 1000 pnp 16 500 -70 -10 12 800 -70 -10 - - - - - - - - bfg35 2 11 sot223 4 18 150 1000 npn 15 500 100 10 11 800 100 10 - - - - - - - - bfg92a/x 2 7 sot143b 5 15 25 400 npn 16 1000 15 10 11 2000 15 10 2 1000 5 10 3 2000 5 10 bfg97 2 10 sot223 5.5 15 100 1000 npn 16 500 70 10 12 800 70 10 - - - - - - - - bfq149 2 10 sot89 5 -15 -10 0 1000 pnp 12 500 -50 -10 - - - - 3.75 500 -50 -10 - - - - bfq18a 2 11 sot89 4 18 150 1000 npn - - - - - - - - - - - - - - - - bfq19 2 10 sot89 5.5 15 100 1000 npn 11.5 500 50 10 7. 5 800 50 10 3.3 500 50 10 - - - - bfr106 2 10 sot23 5 15 100 500 npn - - - - 11.5 800 30 6 3.5 800 30 6 - - - - bfr92a 2 7 s ot23 5 15 25 300 npn 14 1000 15 10 8 2000 15 10 3 2000 5 10 2.1 1000 5 10 bfr92aw 2 7 sot323 5 15 25 300 npn 14 1000 15 10 8 2000 15 10 2 1000 5 10 3 2000 5 10 bfs17a 2 4 sot23 2.8 15 25 300 npn - - - - 13.5 800 14 10 2.5 800 2 5 - - - - bfs25a 2 18 sot323 5 5 6.5 32 npn - - - - 13 1000 0.5 1 1.8 1000 1 1 - - - - bft25a 2 18 sot23 5 5 6.5 32 npn - - - - 15 1000 0.5 1 1.8 1000 0.5 1 - - - - bft92 2 7 sot23 5 -15 -25 300 pnp 18 500 -14 -10 - - - - 2.5 500 -5 -10 - - - - bft92w 2 7 sot323 4 -15 -35 300 pnp 17 500 -15 -10 11 1000 -15 -10 2.5 500 -5 -10 3 1000 -5 -10 bft93 2 9 sot23 5 -12 -35 300 pnp 16.5 500 -30 -5 2.4 500 -10 -5 - - - - bft93w 2 9 sot323 4 -12 -50 300 pnp 15.5 500 -30 -5 10 1000 -30 -5 2.4 500 -10 -5 3 1000 -10 -5 bfg135 3 16 sot223 7 15 150 1000 npn 16 500 100 10 12 800 100 10 - - - - - - - - bfg198 3 15 sot223 8 10 100 1000 npn 18 500 50 8 15 800 50 8 - - - - - - - - bfg590 3 22 sot143b 5 15 200 400 npn 13 900 80 4 7. 5 2000 80 4 - - - - - - - - bfg590/x 3 22 sot143b 5 15 200 400 npn 13 900 80 4 7. 5 2000 80 4 - - - - - - - - bfg591 3 22 sot223 7 15 200 2000 npn 13 900 70 12 7. 5 2000 70 12 - - - - - - - - bfg67 3 14 sot143b 8 10 50 380 npn 17 1000 15 8 10 2000 15 8 1.7 1000 15 8 2.5 2000 5 8 bfg67/ x 3 14 sot143b 8 10 50 380 npn 17 1000 15 8 10 2000 15 8 1.7 1000 15 8 2.5 2000 5 8 bfg93a 3 8 sot143b 6 12 35 30 0 npn 16 1000 30 8 10 2000 30 8 1.7 1000 5 8 2.3 2000 5 8 bfg93a/x 3 8 sot143b 6 12 35 300 npn 16 1000 30 8 10 2000 30 8 1.7 1000 5 8 2.3 2000 5 8 bfg94 3 8 sot223 6 12 60 700 npn - - - - 13.5 1000 45 10 2.7 500 45 10 3 1000 45 10 bfq591 3 22 sot89 7 15 200 2250 npn 11 900 70 12 5.5 2000 70 12 - - - - - - - - bfq67w 3 14 sot323 8 10 50 300 npn 13 1000 15 8 8 2000 15 8 1.3 1000 5 8 2.7 2000 15 8 bfr93a 3 8 sot23 6 12 35 300 npn 13 1000 30 8 7 2000 30 8 1.9 1000 5 8 3 2000 5 8 bfr94a^ 3 8 sot23 6 12 35 300 npn 13 1000 30 8 7 2000 30 8 1.9 1000 5 8 3 2000 5 8 bfr93ar 3 8 sot23 6 12 35 300 npn 13 1000 30 8 7 2000 30 8 1.9 1000 5 8 3 2000 5 8 bfr93aw 3 8 sot323 5 12 35 300 npn 13 1000 30 8 8 2000 30 8 1.5 1000 5 8 2.1 2000 5 8 bfr94aw^ 3 8 sot323 5 12 35 300 npn 13 1000 30 8 8 2000 30 8 1.5 1000 5 8 2.1 2000 5 8 bold = highly recommended product ^ aec-q101 qualified (some limitations apply) wideband transistors function lnas, mixers, frequency multipliers, buffers high-linearity, high-output amplifers and drivers oscillators frequency range <6 ghz 6 ghz C 12 ghz 12 ghz C +18 ghz <6 ghz 6 ghz C 12 ghz 12 ghz C 18 ghz <6 ghz 6 ghz C 12 ghz 12 ghz C +18 ghz band type l,s,c x, ku low ku high, ka l,s,c x, ku low ku high l,s,c x, ku low ku high, ka bfu610f ? ? ? bfu630f ? ? ? ? ? bfu660f ? ? ? ? bfu690f ? ? ? ? bfu725f/n1 ? ? ? ? ? ? ? bfu710f ? ? ? ? bfu730f ? ? ? ? ? ? ? ? bfu760f ? ? ? ? ? bfu790f ? ? ? red = application note available on nxp.com
84 nxp semiconductors rf manual 16 th edition rf wideband transistors generations 4 and 4.5 type generation curve package f t (typ) (ghz) v ceo (max) (v) i c (max) (ma) p tot (max) (mw) polarity gum (typ) (db) @ f = (mhz) @ i c = (ma) @ v ce = (v) nf (typ) (db) @ f = (mhz) @ i c = (ma) @ v ce = (v) nf (typ) (db) @ f = (mhz) @ i c = (ma) @ v ce = (v) pl(1db) (typ) (dbmw) @ v ce = (v) @ f = (mhz) @ i c = (ma) ip3 (typ) (dbm) @ ic = (ma) @ vce = (v) bfg505 4 19 sot143b 9 15 18 150 npn 13 2000 5 6 1.6 900 5 6 1.9 2000 1.25 6 4 6 900 5 10 5 6 bfg505/x 4 19 sot143b 9 15 18 150 npn 13 2000 5 6 1.6 900 5 6 1.9 2000 1.25 6 4 6 900 5 10 5 6 bfg505w 4 19 sot343n 9 15 18 500 npn 12 2000 5 6 1.6 900 5 6 1.9 2000 1.25 6 4 6 900 5 10 5 6 bfg505w/x 4 19 sot343n 9 15 18 500 npn 12 2000 5 6 1.6 900 5 6 1.9 2000 1.25 6 4 6 900 5 10 5 6 bfg505w/xr 4 19 sot343r 9 15 18 500 npn 12 2000 5 6 1.6 900 5 6 1.9 2000 1.25 6 4 6 900 5 10 5 6 bfg520 4 20 sot143b 9 15 70 300 npn 13 2000 20 6 1.6 900 20 6 1.9 2000 5 6 17 6 900 20 26 20 6 bfg520/x 4 20 sot143b 9 15 70 300 npn 13 2000 20 6 1.6 900 20 6 1.9 2000 5 6 17 6 900 20 26 20 6 bfg520/xr 4 20 sot143r 9 15 70 300 npn 13 2000 20 6 1.6 900 20 6 1.9 2000 5 6 17 6 900 20 26 20 6 bfg520w 4 20 sot343n 9 15 70 500 npn 11 2000 20 6 1.1 900 5 6 1.85 2000 5 6 17 6 900 20 26 20 6 bfg520w/x 4 20 sot343n 9 15 70 500 npn 11 2000 20 6 1.1 900 5 6 1.85 2000 5 6 17 6 900 20 26 20 6 bfg540 4 21 sot143b 9 15 120 400 npn 11 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8 bfg540/x 4 21 sot143b 9 15 120 400 npn 11 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8 bfg540/xr 4 21 sot143r 9 15 120 400 npn 11 2000 40 8 1. 3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8 bfg540w 4 21 sot343n 9 15 120 500 npn 10 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8 bfg540w/x 4 21 sot343n 9 15 120 500 npn 10 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8 bfg540w/xr 4 21 sot343r 9 15 120 500 npn 10 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8 bfg541 4 21 sot223 9 15 120 650 npn 9 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8 bfm505 4 19 sot363a 9 8 18 500 npn 10 2000 5 3 1.1 900 1 3 1.9 2000 5 3 - - - - - - - bfm520 4 20 sot363a 9 8 70 1000 npn 9 2000 20 3 1.2 900 5 3 1.9 2000 5 3 - - - - - - - bfq540 4 21 sot89 9 15 120 1,200 npn - - - - 1.9 900 40 8 - - - - - - - - - - - bfq67 4 14 sot23 8 10 50 300 npn 8 2000 15 8 1.7 1000 15 8 2.7 2000 15 8 - - - - - - - bfr505 4 19 sot23 9 15 18 150 npn 10 2000 5 6 1.2 900 5 6 1.9 2000 5 6 4 6 900 5 10 5 6 bfr505t 4 19 sot416 9 15 18 150 npn 10 2000 5 6 1.2 900 1.25 6 1.9 2000 1.25 6 5 6 900 5 10 5 6 bfr520 4 20 sot23 9 15 70 300 npn 9 2000 20 6 1.1 900 5 6 1.9 2000 5 6 17 6 900 20 26 20 6 bfr520t 4 20 sot416 9 15 70 150 npn 9 2000 20 6 1.1 900 5 6 1.9 2000 5 6 17 6 900 20 26 20 6 bfr540 4 21 sot23 9 15 120 500 npn 7 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8 bfs505 4 19 sot323 9 15 18 150 npn 10 2000 5 6 1.2 900 1.25 6 1.9 2000 1.25 6 4 6 90 0 5 10 5 6 bfs520 4 20 sot323 9 15 70 300 npn 9 2000 20 6 1.1 900 5 6 1.9 2000 5 6 17 6 900 20 26 20 6 bfs540 4 21 sot323 9 15 120 500 npn 8 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8 pbr941 4 20 sot23 8 10 50 360 npn 9.5 2000 15 6 1.4 1000 5 6 2 2000 5 6 - - - - - - - pbr951 4 21 sot23 8 10 100 365 npn 8 2000 30 6 1.3 1000 5 6 2 2000 5 6 - - - - - - - prf947 4 20 sot323 8.5 10 50 250 npn 10 2000 15 6 1.5 1000 5 6 2.1 2000 5 6 - - - - - - - prf949 4 20 sot416 9 10 50 150 npn 10 2000 15 6 1.5 1000 5 6 2.1 2000 5 6 - - - - - - - prf957 4 21 sot323 8.5 10 100 270 npn 9.2 2000 30 6 1.3 1000 5 6 1.8 2000 5 6 - - - - - - - bfg310/xr 4.5 30 sot143r 14 6 10 60 npn 18 1800 5 3 - - - - 1 2000 1 3 1.8 3 1800 5 8.5 5 3 bfg310w/xr 4.5 30 sot343r 14 6 10 60 npn 18 1800 5 3 - - - - 1 2000 1 3 1.8 3 1800 5 8.5 5 3 bfg325/xr 4.5 31 sot143r 14 6 35 210 npn 18.3 1800 15 3 - - - - 1.1 2000 3 3 8.7 3 1800 15 19.4 15 3 bfg325w/xr 4.5 31 sot343r 14 6 35 210 npn 18.3 1800 15 3 - - - - 1.1 2000 3 3 8.7 3 1800 15 19.4 15 3 rf wideband transistors generations 5 to 7 type generation curve package f t (typ) (ghz) v ceo (max) (v) i c (max) (ma) p tot (max) (mw) polarity gum (typ) (db) @ f = (mhz) @ i c = (ma) @ v ce = (v) nf (typ) (db) @ f = (mhz) @ i c = (ma) @ v ce = (v) nf (typ) (db) @ f = (mhz) @ i c = (ma) @ v ce = (v) pl(1db) (typ) (dbmw) @ v ce = (v) @ f = (mhz) @ i c = (ma) ip3 (typ) (dbm) @ ic = (ma) @ vce = (v) bfg21w 5 32 sot343r - 4.5 500 600 npn 10 1900 1 3.6 - - - - - - - - - - - - - - - bfg403w 5 25 sot343r 17 4.5 3.6 16 npn 22 2000 3 2 1 900 1 2 1.6 2000 1 2 5 1 900 1 6 1 1 bfg410w 5 26 sot343r 22 4.5 12 54 npn 21 2000 10 2 0.9 900 1 2 1.2 2000 1 2 5 2 2000 10 15 10 2 bfg424f 5 27 sot343f 25 4.5 30 135 npn 23 2000 25 2 0.8 900 2 2 1.2 2000 2 2 12 2 2000 25 22 25 2 bfg424w 5 27 sot343r 25 4.5 30 135 npn 22 2000 25 2 0.8 900 2 2 1.2 2000 2 2 12 2 2000 25 22 25 2 bfg425w 5 27 sot343r 25 4.5 30 135 npn 20 2000 25 2 0.8 900 2 2 1.2 2000 2 2 12 2 2000 25 22 25 2 bfg480w 5 29 sot343r 21 4.5 250 360 npn 16 2000 80 2 1.2 900 8 2 1.8 2000 8 2 20 3.6 2000 1 28 80 2 bfu610f 6 34 sot343f 40 5 10 50 npn 21 5800 8 2 0.75 2400 1 2 1.4 5800 1 2 - - - - 14 8 5 bfu630f 6 35 sot343f 40 5 30 130 npn 28 2400 25 2 0.58 1500 5 2 0.73 2400 5 2 - - - - 23 25 5 bfu660f 6 36 sot343f 40 5 70 200 npn 28.5 1500 60 2 0.6 1500 20 2 0.75 2400 20 2 - - - - 30 60 5 bfu690f 6 37 sot343f 40 5 100 300 npn 25.6 1500 90 2 0.7 1500 50 2 0.9 2400 50 2 - - - - 35 90 5 bfu710f 7 38 sot343f 70 2.8 10 30 npn 16.5 12000 8 2 0.9 5800 2 2 1.5 12000 2 2 - - - - 14.5 8 2 bfu725f/n1 7 33 sot343f 70 2.8 40 136 npn 18 5800 25 2 0 .47 2400 5 2 0.7 5800 5 2 8 2 5800 25 19 25 2 bfu730f 7 39 sot343f 70 2.8 30 130 npn 18.5 5800 25 2 0.56 2400 5 2 0.8 5800 5 2 - - - - 20.5 25 2 bfu730lx 7 - sot883c 53 3.0 30 160 npn 13.3 5800 25 2 0.55 2400 5 2 0.8 5800 5 2 - - - - 26 12.4 2.3 bfu760f 7 40 sot343f 70 2.8 70 200 npn 25 2400 60 2 0.5 1500 20 2 0.6 2400 20 2 - - - - 23 60 2 bfu790f 7 41 sot343f 70 2.8 100 250 npn 20.4 2400 90 2 0.56 1500 50 2 0.7 2400 50 2 - - - - 24 90 2 bold = highly recommended product
85 nxp semiconductors rf manual 16 th edition products by function 3.4 rf ics 3.4.1 rf mmic amplifiers and mixers why choose nxp's rf mmic amplifiers and mixers: ` reduced rf component count ` easy circuit design-in ` reduced board size ` short time-to-market ` broad portfolio ` volume delivery ` short lead time rf mmic amplifiers and mixers selection guide on www.nxp.com/mmics easy-to-use parametric filters help you choose the right zrf mmic for your design. general-purpose wideband amplifiers (50 ) type package gp [db] pl(1db) [dbm] nf [db] ip3o[dbm] zout external inductor vcc (v) is (ma) 250 mhz 500 mhz 750 mhz 250 mhz 500 mhz 750 mhz 250 mhz 500 mhz 750 mhz 250 mhz 750 mhz [ohm] bga2870 sot363 2.5 15.6 31.2 31.1 31.0 5.0 4.0 4.0 3.1 3.2 3.7 15.0 13.0 50 n bga2874 sot363 2.5 16.0 31.1 31.0 30.6 5.0 4.0 4.0 3.0 3.1 3.4 19.0 17. 0 50 n 250 mhz 950 mhz 2150 mhz 250 mhz 950 mhz 2150 mhz 250 mhz 950 mhz 2150 mhz 950 mhz 2150 mhz bga2800 sot363 3 10.5 19.9 20.5 20.2 -2.0 3.7 3.6 3.7 11.0 8.0 50 n bga2803 sot363 3 5.8 23.6 23.4 23.0 -6.0 -6.0 -8.0 3.7 3.6 3.4 5.0 2.0 50 n bga2748 sot363 3 5.7 17. 6 21.9 17. 8 -9.2 -10.9 1.7 1.9 2.4 -1.9 -1.4 50 n bga2714 sot363 3 4.6 20.7 20.4 20.8 -7. 8 -7.9 -9.0 2.4 2.2 3.0 2.1 0.0 50 n bga2801 sot363 3 14.3 22.2 22.4 23.0 2.0 2.0 0.0 3.8 3.8 3.9 14.0 9.0 50 n bga2802 sot363 3 12.5 25.6 25.8 25.5 3.0 1.0 -3.0 4.2 4.1 3.6 13.0 6.0 50 n bga2815 sot363 3 18.2 25.8 25.3 25.2 8.0 5.0 1.0 3.7 3.8 3.7 17. 0 10.0 50 n bga2817 sot363 3 20.0 24.5 24.7 25.1 6.0 6.0 5.0 3.9 3.9 3.8 18.0 15.0 50 n bga2819 sot363 3 16.0 2 7. 0 2 7. 0 28.0 2.0 1.0 3.2 3.3 12.0 11.0 50 n bgm1012 sot363 3 14.6 19.6 20.0 20.4 6.0 3.4 4.9 4.8 4.9 18.0 13.0 50 y bga2816 sot363 3 22.0 31.9 32.0 26.9 7. 0 5.0 3.2 3.2 3.2 15.0 8.0 50 n bga2818 sot363 3 19.9 3 0.1 29.8 30.0 7. 0 6.0 4.0 3.5 3.3 3.3 18.0 14.0 50 n bga2819 sot363 3 18.0 30.0 30.0 31.0 5.0 5.0 3.0 3.0 3.1 3.4 16.0 14.0 50 n bga2850 sot363 5 9.1 23.2 24.0 22.9 -2.0 4.2 4.1 4.0 10.0 8.0 50 n bga2851 sot363 5 7. 0 23.3 24.7 25.2 -3.0 -4.0 -5.0 4.0 3.2 3.0 8.0 5.0 50 n bga2715 sot363 5 4.3 15.6 21.5 23.3 -8.0 -8.5 2.6 2.6 3.1 2.3 0.6 50 n bga2717 sot363 5 8.0 20.0 24.2 25.1 -2.6 -3.1 2.3 2.3 2.9 10.0 6.3 50 n bga2712 sot363 5 12.3 21.1 21.2 22.0 0.2 -2.0 4.2 3.9 4.3 11.0 6.0 50 n b ga2866 sot363 5 17. 4 23.2 23.9 24.3 4.0 4.0 3.0 3.9 3.8 3.9 17. 0 12.0 50 n bga2867 sot363 5 21.7 26.4 2 7. 2 2 7. 2 6.8 6.5 4.9 3.7 3.8 3.7 18.8 14.1 50 n bga2709 sot363 5 23.5 22.5 22.7 23.0 8.3 5.7 4.3 4.0 5.1 22.0 14.0 50 y bga2716 sot363 5 15.9 22.4 22.8 22.9 8.9 6.1 5.5 5.3 5.5 22.2 15.9 50 y bga2776 sot363 5 24.4 22.9 23.2 23.2 7. 2 6.0 4.7 4.9 5.3 18.6 14.4 50 y bga2865 sot363 5 26.4 30.9 32.2 29.6 9.0 8.0 2.0 3.8 3.9 4.0 19.0 10.0 50 n bga2868 sot363 5 26.0 31.5 32.8 33.5 11.0 8.5 4.0 4.1 23.5 21.5 50 n bga2869 sot363 5 22.0 30.9 30.9 32.2 8.8 8.8 7. 6 3.8 3.9 4.0 20.0 19.0 50 n bgm1013 sot363 5 2 7. 5 35.3 35.6 32.1 13.0 8.1 4.6 4.6 4.9 22.7 18.6 75 y bgm1014 sot363 5 21.0 30.2 32.2 34.3 11.2 5.7 4.3 4.2 4.2 20.5 15.1 75 y general-purpose lna mmics type package |s21| 2 [db] pl(1db) [dbm] nf min [db] ip3o [dbm] esd protection v cc (v) is (ma) 450 mhz 900 mhz 1800 mhz 2400 mhz 5800 mhz 450 mhz 900 mhz 2400 mhz 450 mhz 900 mhz 1800 mhz 2400 mhz 5800 mhz 450 mhz 900 mhz 1800 mhz 2400 mhz 5800 mhz kv hbm bga2001 sot343r 2.5 4.0 18.0 14.0 1.3 1.3 -7.4 -4.5 - bga2002 (1) sot343r 2.5 4.0 18.0 14.0 1.3 1.3 -7.4 -4.5 - bga2003 sot343r 2.5 10.0 19.0 14.0 1.8 1.8 -6.5 -4.8 - bga 2011 sot363 3 15.0 19.0 1.5 10.0 - bga2012 sot363 3 7. 0 16.0 1.7 10.0 - bgu7003 sot891 2.5 5.0 20.0 15.2 11.4 0.6 0.8 1.5 1 bgu7003w sot886 2.5 5.0 20.0 15.2 11.4 0.6 0.8 1.5 1 bgu6101 sot1209 3 1.5 13.0 12.0 13.0 (2) -11.0 -11.5 -6.5 (2) 0.8 0.8 1.3 (2) -2.5 -2.0 6.5 (2) 3 bgu6102 sot1209 3 3.0 18.5 16.5 14.0 (3) -5.0 -5.5 0 (3) 0.7 0.8 1.2 (3) 5.5 6.0 11.5 (3) 3 bgu6104 sot1209 3 6.0 22.5 18.5 12.8 (4) 0.5 0.5 6.5 (4) 0.8 0.8 1.1 (4) 11.0 12.0 18.5 (4) 3 (1) aec-q101 qualified (2) i cc 3 ma (3) i cc 6 ma (4) i cc 12 ma bold = highly recommended product bold red = new, highly recommended product
86 nxp semiconductors rf manual 16 th edition @ 1.575 ghz type package supply voltage supply current insertion power gain noise fgure input power at 1 db gain compression input third-order intercept point f 1 = 1713 mhz, f 2 = 1851 mhz v cc i cc |s 21 | 2 nf p l(1db) ip3 i (v) (ma) (db) (db) (dbm) (dbm) min max min typ max min typ max typ v cc = 1.5 v, min v cc = 1.5 v, typ v cc = 1.8 v, min v cc = 1.8 v, typ v cc = 2.2 v, min v cc = 2.2 v, typ v cc = 2.5 v, i cc = 5 ma v cc = 2.85 v, min v cc = 2.85 v, typ v cc = 1.5 v, min v cc = 1.5 v, typ v cc = 1.8 v, min v cc = 1.8 v, typ v cc = 2.2 v, min v cc = 2.2 v, typ v cc = 2.5 v, i cc = 5 ma v cc = 2.85 v, min v cc = 2.85 v, typ bgu7003 sot891 2.2 2.85 3 - 15 16 18.3 20 0.8 - - - - - - -20 - - - - - - - - 0 - - bgu7004^ sot886 1.5 2.85 - 4.5 - - 16.5* - 0.9 - - -14 -11 - - - -11 -8 - - 5 9 - - - 5 12 bgu7005 sot886 1.5 2.85 - 4.5 - - 16.5* - 0.9 - - -14 -11 - - - -11 -8 - - 5 9 - - - 5 12 bgu7007 sot886 1.5 2.85 - 4.8 - - 18.5** - 0.9 - - -15 -12 - - - -14 -11 - - 1 4 - - - 2 5 bgu7008^ sot886 1.5 2.85 - 4.8 - - 18.5** - 0.9 - - -15 -12 - - - -14 -11 - - 1 4 - - - 2 5 bgu8006 wl-csp 1.5 3.1 - 4.1 - - 17.5**** - 0.6 # - - - -10 - - - - -8 - - - 5 - - - - 8 bgu8007 sot886 1.5 2.2 - 4.6 - - 19.0*** - 0.75 # -15 -12 - - -13 -10 - - - 1 4 - - 2 5 - - - ^ aec-q101 qualified (some limitations apply) # evaluation board losses excluded * 16.5 db without jammer / 17.5 db with jammer ** 18.5 db without jammer / 19.5 db with jammer *** 19.0 db without jammer / 20.5 db with jammer **** 17.5 db without jammer / 19 db with jammer lnas for set-top boxes (75 ) type package frequency range mode @ gain (1) nf p l (1db) oip3 fl (2) rl out rl in v cc i cc (mhz) (v) (ma) (db) (db) (dbm) (dbm) (db) (db) (db) bgu7031 sot363 40 - 1000 g p 10 db 5 43 10 4.5 14 29 -0.2 12 18 bgu7032 sot363 40 - 1000 g p 10 db 5 43 10 4.5 14 29 -0.2 12 18 bypass 5 4 -2 2.5 - 29 -0.2 8 8 bgu7033 sot363 40 - 1000 g p 10 db 5 43 10 4.5 14 29 -0.2 12 18 g p 5 db 5 43 5 6 9 29 -0.2 12 17 bypass 5 4 -2 2.5 - 29 -0.2 8 8 bgu7041 sot363 40 - 1000 g p 10 db 3.3 38 10 4 12 29 -0.2 12 21 bgu7042 sot363 40 - 1000 g p 10 db 3.3 38 10 4 12 29 -0.2 12 21 bypass 3.3 3 -2 2.5 - 29 -0.2 10 10 bgu7044 sot363 40 - 1000 g p 14 db 3.3 34 14 2.8 13 29 -0.2 12 20 bgu7045 sot363 40 - 1000 g p 14 db 3.3 34 14 2.8 13 29 -0.2 12 20 bypass 3.3 3 -2 2.5 - 27 -0.2 10 9 sige:c lnas (for gps and others) type package @ v cc @ i cc frange frange gass nf p l(1db) ip3 o rl in rl out [typ] [typ] [min] [max] [typ] [typ] [typ] [typ] [typ] [typ] (v) (ma) (mhz) (mhz) (db) (db) (dbm) (dbm) (db) (db) bgu7051 sot650 -1 3.3 65 500 750 23.5 0.6 17 32 2 7. 5 18 750 850 21.5 0.63 16.5 32 26 17. 5 900 1500 21 0.65 16.5 33 24.5 18 bgu7052 sot650 -1 3.3 80 1500 1750 21.5 0.76 15.5 37 23 22 1850 1900 20 0.76 14.5 35.5 23 22 1950 2500 19.7 0.79 14.5 35 22 21 bgu7053 sot650 -1 3.3 90 2300 2500 18.5 0.85 13.5 36 23 19.5 2700 2800 17. 5 0.9 13 36 26 23 bgu7060 sot1301a a 5 200 700 800 3 21 11 25.5 20 19 12 15 7. 5 22.5 20 19 18 7. 2 -7 4.5 20 19 35 1 -12.5 2.5 24 19 bgu7061 sot1301a a 5 200 800 950 3 21 11 25.5 20 19 12 15 7. 5 22.5 20 19 18 7. 2 -7 4.5 20 19 35 1 -12.5 2.5 24 19 bgu7062 sot1301a a 5 185 1710 1785 3 20.6 10.7 25.6 23 16 12 15 5.4 21 23 16 18 9.3 -7 3.4 23 16 35 0.98 -12.8 1 26 16 bgu7063 sot1301a a 5 190 1920 1980 18 6.4 -6.4 5.4 35 15 230 35 1.05 -12.5 0.9 31 15 lnas for wireless infrastructures (50 )
87 nxp semiconductors rf manual 16 th edition products by function general-purpose medium power amplifiers type package @ v cc @ i cc frequency range rf input frequency gain p l(1db) ip3 o nf [typ] [typ] [min] [max] [typ] [typ] [typ] [typ] (v) (ma) (mhz) (mhz) (db) (dbm) (dbm) (db) bga6289 sot89 4.1 84 100-3000 900 15.0 31.0 17. 0 3.5 1800 13.0 28.0 15.0 3.7 bga6489 sot89 5.1 78 100-3000 900 20.0 33.0 20.0 3.1 1800 16.0 30.0 17. 0 3.3 bga6589 sot89 4.8 81 100-3000 900 22.0 33.0 21.0 3 1800 17. 0 32.0 20.0 3.3 bga7014* sot89 5 70 30-6000 2000 12.0 13.0 26.0 6.2 4000 13.5 10.0 20.5 6.0 bga7017* sot89 5 87 30-6000 2000 12.0 16.5 29.0 6.4 4000 13.5 11.5 23.0 6.3 bga7020* sot89 5 120 30-6000 2000 13.0 18.5 33.0 6.5 4000 14.0 14.0 26.0 6.2 bga7024 sot89 5 110 400 - 2700 940 22.0 24.0 3 7. 5 2.9 1960 16.0 25.5 38.0 3.7 2140 15.0 25.5 38.0 3.7 2445 14.0 24.5 3 7. 5 4.0 bga7027 sot89 5 165 400 - 2700 940 19.0 29.0 41.5 2.6 1960 11.5 2 7. 5 43.0 3.8 2140 11.0 28.0 42.5 3.9 bga7124 sot908 5 140 400 - 2700 940 23.0 25.0 38.5 5.2 1960 16.5 24.5 38.0 4.6 2140 16.0 24.5 3 7. 5 4.8 2445 14.0 23.5 36.0 5.4 bga7127 sot908 5 180 400 - 2700 940 20.0 2 7. 5 41.5 3.1 1960 13.0 28.5 42.5 4.5 2140 12.0 28.0 42.0 4.6 2445 10.5 2 7. 5 41.5 4.7 bga7130 sot908 5 450 400 - 2700 750 18.0 30.0 43.0 5.0 2140 10.0 30.0 44.0 5.0 vgas for wireless infrastructures type package type @ v cc @ i cc f range f range gp @ minimum attenuation attenuation range nf p l(1db) ip3 o [typ] [typ] [min] [max] (db) (db) [typ] [typ] [typ] (v) (ma) (mhz) (mhz) (db) (dbm) (dbm) bga7204 sot617-3 single 5 115 400 700 18.5 31.5 7 21 38 5 115 700 1450 18.5 31.5 6.5 21 3 7. 5 5 115 1450 2100 17. 5 30.5 6.5 20.5 36 5 115 2100 2750 16.5 30 7 20 34 bga7210 sot617-3 single 5 185 700 1400 30 31.5 6.5 21 39 5 185 1400 170 0 29.5 31.5 6.5 21 37 5 185 170 0 2200 29 31.5 6.5 21 35 5 185 2200 2800 28 30.5 7 23 35 5 185 3400 3800 26 29.5 8 19 27 bga7350 sot617-1 dual 5 245 50 250 18.5 24 6 17 43 bga7351 sot617-1 dual 5 280 50 250 22 28 6 16.5 46 2-stage variable-gain linear amplifier type package @ frequency range @ 900 mhz @ 1900 mhz limits v s i s gain (1) dg (2) p 1db acpr gain (1) dg (2) p 1db acpr v s i s p tot (v) (ma) (db) (db) (dbm) (dbc) (db) (db) (dbm) (dbc) (v) (ma) (mw) bga2031/1 sot363 3 51 800-2500 24 62 11 49 23 56 13 49 3.3 77 200 (1) gain = gp, power gain (2) dg = gain control range wideband linear mixer type package @ rf input if output @ 880 mhz @ 1900 mhz limits v s i s frequency range frequency range nf gain (1) o i p 3 nf gain (1) o i p 3 v s i s p tot (v) (ma) (db) (db) (dbm) (db) (db) (dbm) (v) (ma) (mw) bga2022 sot363 3 6 800 - 2500 50 - 500 9 5 4 9 6 10 4 10 40 (1) gain = gp, power gain (2) dg = gain control range bold = highly recommended product bold red = new, highly recommended product * check status in section 3.1, as this type is not yet released for mass production
88 nxp semiconductors rf manual 16 th edition 3.4.2 wireless infrastructure ics low-noise pll + vco (lo generator) for wireless infrastructures type package @ v cc @ i cc fi(ref) vco output frequency (mhz) rf output frequency (mhz) normalized phase noise phase noise @ 1mhz integrated rms phase error programmable output power [typ] [typ] [min] [max] [max] [max] [typ] (v) (ma) (mhz) (dbc/hz) (dbc/hz) deg (dbm) bgx7300* sot1092-2 3.3 150 10 - 250 2200 - 2750 2750 - 3500 3500 - 4400 68 - 4400 -225 -134 (2.2 ghz carrier) -133 (3.0 ghz carrier) -131 (4.2 ghz carrier) 0.24 @ 2.1 ghz -5 to +5 iq modulators for wireless infrastructure type package @ v cc @ i cc flo range flo po bwmod nflr(o) * p l(1db) ip2 o ip3 o sbs cf [typ] [typ] [typ] [typ] [typ] [typ] [typ] [typ] [typ] [typ] (v) (ma) (mhz) (mhz) (dbm) (mhz) (dbm/hz) (dbm) (dbm) (dbm) (dbc) (dbm) bgx7100 sot616 -3 5 165 400 - 4000 750 -0.2 400 -159/-158.5 11.5 71 29 55 -55 165 910 -159/-158.5 11.5 72 29 49 -55 173 1840 -158.5/-158 11.5 69 27 47 -50 173 1960 -158.5/-158 11.5 72.5 27 49 -48 178 2140 -158.5/-158 11.5 74 27 51 -45 178 2650 -158/-158 11.5 62 26 60 -45 184 3650 -158/-158 11.5 60 25 53 -43 bgx7101 sot616 -3 5 172 400 - 4000 750 4 650 -159/-158.5 12 71 28 63 -51 172 910 -159/-158.5 12 75 28 49 -57 180 1840 -158.5/-158 12 71 27 55 -50 180 1960 -158.5/-158 12 72 27 57 -47 178 2140 -158.5/-158 12 75 27 63 -45 182 2650 -158/-158 12 65 26 50 -45 188 3650 -158/-158 12 65 25 57 -42 * without modulation/with modulation dual mixers for wireless infrastructure type package @ v cc @ i cc rf input frequency rf input frequency local oscillator frequency local oscillator frequency second-order spurious rejection 2rf-2lo nfssb single- sideband ip3 i gconv [typ] [typ] [min] [max] [min] [max] [max] [typ] [typ] [typ] (v) (ma) (mhz) (mhz) (mhz) (mhz) (dbc) (db) (dbm) (db) bgx7220 sot1092-2 5 330 700 950 500 115 0 -60 10 26 8 bgx7221 sot1092-2 5 365 1400 2700 1500 2500 -60 10 25.5 8.5 bold red = new, highly recommended product * check status in section 3.1, as this type is not yet released for mass production
89 nxp semiconductors rf manual 16 th edition products by function 3.4.4 low-noise lo generators for vsat and general microwave applications why choose nxps low-noise lo generators: ` lowest total cost of ownership ` alignment-free concept ` easy circuit design-in ` improved lo stability low-noise lo generators for vsat applications type package f in(ref) v cc i cc pll phase noise @ n=64, @ 100 khz pll output buffer input f o(rf) po rl out(rf) s i typ typ max typ max min (mhz) (v) (ma) (dbc/hz) (ghz) (dbm) (db) (dbm) tff1003hn sot616 50 - 815 3.3 100 -92 12.8 - 13.05 -5 -10 -10 tff1007hn sot616 230.46 - 234.38 3.3 100 -104 14.62 - 15 -3 -10 -10 low-noise lo generators for general microwave applications type package f in(ref) v cc i cc pll phase noise @ n=64 pll output buffer input frequency band fo(rf) po rlout(rf) s i typ typ @ 100 khz @ 10 mhz min typ max typ max min (mhz) (v) (ma) (dbc/hz) (dbc/hz) (ghz) (ghz) (ghz) (dbm) (db) (dbm) tff11070hn* sot616 27 - 448 3.3 100 -95 -131 6.84 7 7.16 -5 -10 -10 c tff11073hn* sot616 28 - 468 3.3 100 -95 -131 7.16 7. 3 3 7. 49 -5 -10 -10 c tff11077hn* sot616 29 - 490 3.3 100 -95 -131 7. 49 7. 67 7. 8 4 -5 -10 -10 c tff11080hn* sot616 31 - 513 3.3 100 -95 -131 7. 8 4 8.02 8.21 -5 -10 -10 c. x tff11084hn* sot616 32 - 537 3.3 100 -95 -131 8.21 8.4 8.59 -5 -10 -10 x tff11088hn* sot616 34 - 562 3.3 100 -95 -131 8.59 8.79 8.99 -5 -10 -10 x tff11092hn* sot616 35 - 588 3.3 100 -95 -131 8.99 9.2 9.41 -5 -10 -10 x tff11094hn* sot616 36-600 3.3 100 -95 -131 9.0 0 9.4 9.6 -5 -10 -10 x tff11096hn* sot616 37 - 616 3.3 100 -95 -131 9.41 9.63 9.85 -5 -10 -10 x tff11101hn* sot616 38 - 644 3.3 100 -95 -131 9.85 10.07 10.31 -5 -10 -10 x tff1110 5hn* sot616 40 - 674 3.3 100 -95 -131 10.31 10.54 10.79 -5 -10 -10 ku tff11110 hn* sot616 42 - 706 3.3 100 -95 -131 10.79 11.03 11.2 9 -5 -10 -10 ku tff11115hn* sot616 44 - 738 3.3 100 -95 -131 11.2 9 11.55 11.81 -5 -10 -10 ku tff11121hn* sot616 46 - 773 3.3 100 -95 -131 11.81 12.09 12.36 -5 -10 -10 ku tff11126hn* sot616 48 - 809 3.3 100 -95 -131 12.36 12.65 12.94 -5 -10 -10 ku tff11132hn* sot616 51 - 846 3.3 100 -95 -131 12.9 13.2 13.5 -5 -10 -10 ku tff11139hn* sot616 53 - 886 3.3 100 -95 -131 13.54 13.85 14.17 -5 -10 -10 ka tff11145hn* sot616 55 - 927 3.3 100 -95 -131 14.17 14.5 14.83 -5 -10 -10 ka tff11152hn* sot616 58 - 970 3.3 100 -95 -131 14.83 15.18 15.52 -5 -10 -10 ka bold = highly recommended product * to be released on request, please consult your local nxp representative or authorized distributor 3.4.3 satellite lnb rf ics type package input freq range v cc i g conv nf oip3 lo freq integrated phase noise density (degrees rms) (v) (ma) (db) (db) (db) (ghz) tff1014hn sot763-1 10.7 - 12.75 5 52 36 7 13 9.75 / 10.6 1.5 tff1015hn sot763-1 10.7 - 12.75 5 52 39 7 13 9.75 / 10.6 1.5 tff1017hn sot763-1 10.7 - 12.75 5 52 42 7 13 9.75 / 10.6 1.5 tff1018hn sot763-1 10.7 - 12.75 5 52 45 7 13 9.75 / 10.6 1.5
90 nxp semiconductors rf manual 16 th edition 3.5 rf mos transistors 3.5.1 jfets why choose nxps jfets: ` reliable volume supplier ` short lead time ` broad portfolio jfet selection guide on www.nxp.com/rffets easy-to-use parametric filters help you choose the right junction field effect transistor for your design. n-channel junction field-effect transistors for switching type package v ds i g characteristics i dss v gsoff r dson c rs t on t off (v) (ma) (ma) (v) ( ) (pf) (ns) (ns) max max min max min max max min max typ max typ max bsr56 sot23 40 50 50 - 4 10 25 - 5 - - - 25 bsr57 sot23 40 50 20 100 2 6 40 - 5 - - - 50 bsr58 sot23 40 50 8 80 0.8 4 60 - 5 - - - 100 pmbfj108 sot23 25 50 80 - 3 10 8 - 15 4 - 6 - pmbfj109 sot23 25 50 40 - 2 6 12 - 15 4 - 6 - pmbfj110 sot23 25 50 10 - 0.5 4 18 - 15 4 - 6 pmbfj111 sot23 40 50 20 - 3 10 30 - typ.3 13 - 35 - pmbfj112 sot23 40 50 5 - 1 5 50 - typ.3 13 - 35 - pmbfj113 sot23 40 50 2 - 0.5 3 100 - typ.3 13 - 35 - pmbf4391 sot23 40 50 50 150 4 10 30 - 3.5 - 15 - 20 pmbf4392 sot23 40 50 25 75 2 5 60 - 3.5 - 15 - 35 pmbf4393 sot23 40 50 5 30 0.5 3 100 - 3.5 - 15 - 50 p-channel junction field-effect transistors for switching type package v ds i g characteristics i dss v gsoff r dson c rs t on t off (v) (ma) (ma) (v) ( ) (pf) (ns) (ns) max max min max min max max min max typ max typ max pmbfj174 sot23 30 50 20 135 5 10 85 typ.4 7 - 15 - pmbfj175 sot23 30 50 7 70 3 6 125 typ.4 15 - 30 - pmbfj176 sot23 30 50 2 35 1 4 250 typ.4 35 - 35 - pmbfj177 sot23 30 50 1.5 20 0.8 2.25 300 typ.4 45 - 45 -
91 nxp semiconductors rf manual 16 th edition products by function n-channel junction field-effect transistors for general rf applications type package v ds i g characteristics i dss v gsoff |yfs| c rs (v) (ma) (ma) (v) (ms) (pf) max max min max min max min max min max dc, lf, and hf amplifiers bf545a sot23 30 10 2 6.5 0.4 7. 5 3 6.5 0.8 - bf545b sot23 30 10 6 15 0.4 7. 5 3 6.5 0.8 - bf545c sot23 30 10 12 25 0.4 7. 5 3 6.5 0.8 - bf556a sot23 30 10 3 7 0.5 7. 5 4.5 - 0.8 - bf556b sot23 30 10 6 13 0.5 7. 5 4.5 - 0.8 - bf556c sot23 30 10 11 18 0.5 7. 5 4.5 - 0.8 - pre-amplifiers for am tuners in car radios bf861a sot23 25 10 2 6.5 0.2 1.0 12 20 2.1 2.7 bf861b sot23 25 10 6 15 0.5 1.5 16 25 2.1 2.7 bf861c sot23 25 10 12 25 0.8 2 20 30 2.1 2.7 bf862 sot23 20 10 10 25 0.3 2 35 - t yp=1.9 - rf stages fm portables, car radios, main radios & mixer stages bf510 (1) sot23 20 10 0.7 3 typ. 0.8 2.5 0.4 0.5 bf511 (1) sot23 20 10 2.5 7 typ. 1.5 4 0.4 0.5 bf512 (1) sot23 20 10 6 12 typ. 2.2 6 0.4 0.5 bf513 (1) sot23 20 10 10 18 typ. 3 7 0.4 0.5 low-level general-purpose amplifiers bfr30 sot23 25 5 4 10 < 5 1 4 1.5 - bfr31 sot23 25 5 1 5 < 2.5 1.5 4.5 1.5 - general-purpose amplifiers bf t4 6 sot23 25 5 0.2 1.5 < 1.2 > 1 1.5 - am input stages uhf/vhf amplifiers pmbfj308 sot23 25 50 12 60 1 6.5 > 10 1.3 2.5 pmbfj309 sot23 25 50 12 30 1 4 > 10 1.3 2.5 pmbfj310 sot23 25 50 24 60 2 6.5 > 10 1.3 2.5 pmbfj620 sot363 25 50 24 60 2 6.5 10 1.3 2.5 (1) asymmetrical 3.5.2 mosfets why choose nxp's mosfets: ` reference designs for tv tuning ` short lead time ` broad portfolio ` smallest packages ` 2-in-1 fets for tuner applications ` reliable volume supply ` best performance mosfets for tv tuning n-channel, single mosfets for switching type package v ds characteristics i d i dss v gs(th) r dson c rs t on t off |s 21(on) | 2 |s 21(off) | 2 mode (v) (ma) (ma) (v) ( ) (pf) (ns) (ns) (db) (db) max max min max min max max min max typ max typ max max min bss83 sot143 10 50 - - 0.1 2 45 typ.0.6 - 1 - 5 - - enh. silicon rf switches bf1107 sot23 3 10 - 100 - 7 20 - - - - - - 2.5 30 depl. bf1108 sot143b 3 10 - 100 - 7 20 - - - - - - 3 30 depl. bf1108r sot143r 3 10 - 100 - 7 20 - - - - - - 3 30 depl. bf1108w sot343 3 10 - 100 - 7 20 - - - - - - 3 30 depl bf1108wr sot343r 3 10 - 100 - 7 20 - - - - - - 3 30 depl bf1118 sot143b 3 10 - 100 - 7 22 - - - - - - 3 30 depl bf1118r sot143r 3 10 - 100 - 7 22 - - - - - - 3 30 depl bf1118w sot343 3 10 - 100 - 7 22 - - - - - - 3 30 depl bf1118wr sot343r 3 10 - 100 - 7 22 - - - - - - 3 30 depl bold = highly recommended product rf mosfet selection guide on www.nxp.com/rffets easy-to-use parametric filters help you choose the right rf mosfet for your design.
92 nxp semiconductors rf manual 16 th edition n-channel, dual-gate mosfets type package v ds i d characteristics i dsx v gs(th) |yfs| c is c os f @ 800 mhz vhf uhf (v) (ma) (ma) (v) (ms) (pf) (pf) (db) max max min max min max min max typ typ typ with external bias bf908 sot143 12 40 3 27 - -2 36 50 3.1 1.7 1.5 x x bf908r sot143r 12 40 3 27 - -2 36 50 3.1 1.7 1.5 x x bf908wr sot343r 12 40 3 27 - -2 36 50 3.1 1.7 1.5 x x bf991 sot143 20 20 4 25 - -2.5 10 - 2.1 1.1 1 x - bf992 sot143 20 40 - - - -1.3 20 - 4 2 1.2 (1) x - bf994s sot143 20 30 4 20 - -2.5 15 - 2.5 1 1 (1) x - bf996s sot143 20 30 4 20 - -2.5 15 - 2.3 0.8 1.8 - x bf998 sot143 12 30 2 18 - -2.0 21 - 2.1 1.05 1 x x bf998r sot143r 12 30 2 18 - -2.0 21 - 2.1 1.05 1 x x bf998wr sot343r 12 30 2 18 - -2.5 22 - 2.1 1.05 1 x x fully internal bias bf1105 sot143 7 30 8 16 0.3 1.2 25 - 2.2 (3) 1.2 (2) 1.7 x x bf1105r sot143r 7 30 8 16 0.3 1.2 25 - 2.2 (3) 1.2 (2) 1.7 x x bf1105 wr sot343r 7 30 8 16 0.3 1.2 25 - 2.2 (3) 1.2 (2) 1.7 x x partly internal bias bf904a sot143 7 30 8 13 0.3 1 22 30 2.2 1.3 2 x x bf904ar sot143r 7 30 8 13 0.3 1 22 30 2.2 1.3 2 x x bf904awr sot343r 7 30 8 13 0.3 1 22 30 2.2 1.3 2 x x bf909a sot143 7 40 12 20 0.3 1 36 50 3.6 2.3 2 x x bf909ar sot143r 7 40 12 20 0.3 1 36 50 3.6 2.3 2 x x bf909awr sot343r 7 40 12 20 0.3 1 36 50 3.6 2.3 2 x x bf1102(r) (4) sot363 7 40 12 20 0.3 1.2 36 - 2.8 (3) 1.6 (2) 2 x x bf1201 sot143 10 30 11 19 0.3 1.2 23 35 2.6 0.9 1.9 x x bf1201r sot143r 10 30 11 19 0.3 1.2 23 35 2.6 0.9 1.9 x x b f1201wr sot343r 10 30 11 19 0.3 1.2 23 35 2.6 0.9 1.9 x x bf1202 sot143 10 30 8 16 0.3 1.2 25 40 1.7 0.85 1.1 x x bf1202r sot143r 10 30 8 16 0.3 1.2 25 40 1.7 0.85 1.1 x x bf1202wr sot343r 10 30 8 16 0.3 1.2 25 40 1.7 0.85 1.1 x x bf1203 (5) sot363 10 30 11 19 0.3 1.2 23 35 2.6 0.9 1.9 x - 10 30 8 16 0.3 1.2 25 40 1.7 0.85 1.1 - x bf1204 (4) sot363 10 30 8 16 0.3 1.2 25 40 1.7 0.85 1.1 x x bf1206 (5) sot363 6 30 14 23 0.3 1.0 33 48 2.4 1.1 1.6 x - 6 30 9 17 0.3 1.0 29 44 1.7 0.85 1.4 - x bf1207 (5)(7)(8) sot363 6 30 13 23 0.3 1.0 25 40 2.2 0.9 1.4 x - 6 30 9 19 0.3 1.0 26 41 1.8 0.8 1.4 - x bf1208 (5)(6)(7) sot666 6 30 14 24 0.3 1 26 41 2.2 0.9 1.4 x - 6 30 9 17 0.3 1 28 43 2 0.85 1.4 - x bf1208d (5)(6)(7) sot666 6 30 14 24 0.3 1 26 41 2.1 0.8 1.1 x - 6 30 10 20 0.3 1 25 40 2.1 0.85 1.4 - x bf1210 (5)(6) sot363 6 30 14 24 0.3 1 26 41 2.2 0.9 1.4 x - 6 30 9 17 0.3 1 28 43 2 0.85 1.4 - x bf1211 sot143 6 30 11 19 0.3 1.0 25 40 2.1 0.9 1.3 x - bf1211r sot143r 6 30 11 19 0.3 1.0 25 40 2.1 0.9 1.3 x - bf1211wr sot343 6 30 11 19 0.3 1.0 25 40 2.1 0.9 1.3 x - bf1212 sot143 6 30 8 16 0.3 1.0 28 43 1.7 0.9 1.1 - x bf1212r sot143r 6 30 8 16 0.3 1.0 28 43 1.7 0.9 1.1 - x bf1212wr sot343 6 30 8 16 0.3 1.0 28 43 1.7 0.9 1.1 - x bf1214 (4) sot363 6 30 13 23 0.3 1.0 25 35 2.2 0.9 1.4 x x bf1218 (5)(6)(7) sot363 6 30 14 24 0.3 1 26 41 2.1 0.8 1.1 x - 6 30 10 20 0.3 1 25 40 2.1 0.85 1.4 - x n-channel, dual-gate mosfets for set-top boxes type package v ds i d characteristics i dsx v (th)gs |yfs| c is c os f @ 800 mhz x-mod @ 40 db gain reduction (v) (ma) (ma) (v) (ms) (pf) (pf) (db) (db) max max max min max typ typ typ typ typ bf1215 (1)(2)(3) sot363 6 30 19.5 0.3 1 27 2.5 0.8 1.9 107 30 23 0.3 1 27 2.5 0.8 1.9 107 bf1216 (1) sot363 6 30 19.5 0.3 1 27 2.5 0.8 1.9 107 30 23 0.3 1 27 2.5 0.8 1.9 107 bf1217 sot343 30 23 0.3 1 27 2.5 0.8 1.9 107 (1) two low-noise gain amplifiers in one package (2) transistor a: fully internal bias, transistor b: partly internal bias (3) internal switching function bold = highly recommended product (1) @ 200 mhz (2) c oss (3) c ig (4) two equal dual gate mosfets in one package (5) two low-noise gain amplifiers in one package (6) transistor a: fully internal bias, transistor b: partly internal bias (7) internal switching function (8) transistor a: partly internal bias, transistor b: fully internal bias
93 nxp semiconductors rf manual 16 th edition products by function 3.6 rf modules why choose nxps rf modules: ` excellent linearity, stability, and reliability ` rugged construction ` extremely low noise ` high power gain ` low total cost of ownership catv types for chinese (c-types) and 1 ghz gaas hfet line-ups the c-types are specially designed for the chinese market, customized for two major governmental projects. the gaas hfet family includes a complete 1 ghz line-up for high-end applications around the world. c-types (china) ` catv push-pulls, section 3.6.2: bgy588c, bge788c, cgy888c ` catv power doublers, section 3.6.3: bgd712c, cgd982hci, cgd985hci, cgd987hci ` catv optical receivers, section 3.6.4: bgo807c, bgo807ce 1 ghz gaas hfet high-end hybrids ` catv push-pulls, section 3.6.2 : cgy1032, cgy1041, cgy1043, cgy1047, cgy1049 ` catv power doublers, section 3.6.3: cgd1040hi, cgd1042hi, cgd1044hi, cgd1046hi, cgd1042h, cgd1044h catv module selection guide on www.nxp.com/catv easy-to-use parametric filters help you choose the right catv module for your design. 3.6.1 catv push-pulls type frequency range (mhz) (1) gain (db) slope (db) fl (db) (2) rl in /rl out (db) ctb (db) (3) x mod (db) (3) cso (db) (3) @ ch @ vo (dbmv) nf @ f max (db) i tot (ma) bgy588c 40-550 33.5 - 35.5 0.2 - 1.7 0.5 16 / 16 -57 -62 77 44 8 345 bgy785a 40-750 18 - 19 0 - 2 0.1 20 / 20 -54.5 - 5 7. 5 -62 110 44 6 225 bge788c 33.2 - 35.2 0.3 - 2.3 0.6 16 / 16 -49 -52 110 44 8 325 bgy787 21 - 22 0 - 1.5 0.2 20 / 20 -54.5 -54 - 5 7. 5 110 44 5 220 bge787b 28.5 - 29.5 0.2 - 2.2 0.45 20 / 20 -48 -52 -56 110 44 6.5 340 bge885 40-870 16.5 - 17.5 0.2 - 1.2 0.5 14 / 14 8 240 bgx885n 16.5 - 17.5 0.2 - 1.4 0.3 20 / 20 8 240 bgy885a 18 - 19 0 - 2 0.2 20 / 20 -65 -65 -67 49 44 6 225 bgy887 21 - 22 0.2 - 2 0.2 20 / 20 -64.5 -64.5 - 67. 5 49 44 5 220 cgy888c 34.5 - 36.5 1.5 0.25 20 / 20 -65 -72 -63 112 44 4 280 bgy835c 33.5 - 34.5 0.5 - 2.5 0.5 20 / 20 -60 -55 49 44 7 340 bgy887b 28.5 - 29.5 0.5 - 2.5 0.5 20 / 20 -60 -60 -60 49 44 6.5 340 bgy888 33.5 - 34.5 0.5 - 2.5 0.2 20 / 20 -63.5 -63 -64 49 44 5.5 325 3.6.2 catv push-pulls 1 ghz type frequency range (mhz) (1) gain (db) slope (db) fl (db) (1) rl in /rl out (db) ctb (db) (3) x mod (db) (3) cso (db) (3) @ ch @ vo (dbmv) nf @ f max (db) i tot (ma) cgy1041 40 - 1003 21 - 22.5 1.2 - 2.7 0.9 20 / 18 -62 -58 -64 79 ntsc channels + 75 digital channels 44 4.3 265 cgy1043 23 - 24.5 1.2 - 2.7 0.9 20 / 18 -62 -58 -64 79 ntsc channels + 75 digital channels 44 4.2 265 cgy1047 27 - 28.5 1.5 - 2.5 0.8 20 / 18 -64 -60 -66 79 ntsc channels + 75 digital channels 44 4.5 250 cgy1049 29 - 31 0.85 - 2.35 0.85 20 / 18 -62 -58 -64 79 ntsc channels + 75 digital channels 44 4.5 265 cgy1032 32 - 34 1.05 - 2.55 0.85 20 / 18 -62 -58 -64 79 ntsc channels + 75 digital channels 44 4.4 265 bgy1085a 18 - 19 0 - 2 0.3 20 / 20 -53 -54 -56 150 40 7. 5 240 bold = highly recommended product
94 nxp semiconductors rf manual 16 th edition (1) frequency range: minimum and maximum frequency in mhz at which data are characterized (@ ch / @ vo) (2) fl is flatness of frequency response (3) the number of channels and the output voltage at which ctb, x mod , cso, imd2, and imd3 are characterized, are @ f max (4) s is minimum responsivity of optical receivers 3.6.3 catv power doublers type frequency range (mhz) (1) gain (db) slope (db) fl (db) (1) rl in /rl out (db) ctb (db) (3) x mod (db) (3) cso (db) (3) @ ch @ vo (dbmv) nf @ f max (db) i tot (ma) bgd712 40 - 750 18.2 - 18.8 0.5 - 1.5 0.35 17 / 17 -62 -63 -63 112 44 7 395 bgd712c 18.2 - 18.8 0.5 - 1.5 0.35 17 / 17 -62 -63 112 44 7 410 bgd714 20 - 20.6 0.5 - 1.5 0.35 23 / 23 - 61 -62 -62 112 44 7 395 bgd812 40 - 870 18.2 - 18.8 0.4 - 1.4 0.5 25 / 23 -57 -62 -58 132 44 7. 5 395 bgd814 19.7 - 20.3 0.5 - 1.5 0.5 25 / 24 -56 - 61 -57 132 44 7. 5 395 bgd816l 21.2 - 21.8 0.5 - 1.5 0.5 22 / 25 -55 -58 -56 132 44 7. 5 360 cgd942c 22 - 24 1 - 2 0.5 20 / 20 -66 -66 -66 98 48 3.5 450 cgd944c 24 - 26 1 - 2 0.5 20 / 20 -66 -66 -66 98 48 3.5 450 cgd1040hi 40 - 1003 19.5 - 22 0.5 - 2 1 20 / 20 -70 -66 -76 79 58.4 5.5 440 cgd1042hi 22 - 23.5 0.5 - 2 1 20 / 20 -70 -65 -75 79 58.4 5.5 440 cgd1044hi 23.5 - 25.5 0.5 - 2 1 20 / 20 -70 -64 -75 79 58.4 5 440 cgd1046hi 26.5 - 28 0.7 - 2.2 1 20 / 20 -75 -68 -70 79 56.4 5 450 cgd1042h 22 - 24 1.5 0.5 20 / 21 -75 -67 -76 79 59 5 450 cgd1044h 24 - 26 1 0.5 20 / 21 -75 -67 -76 79 59 5 450 cgd982hci 22 - 24 0.5 - 2 1 20 / 20 -66 -68 -69 98 48 5.5 440 cgd985hci 23.5 - 25.5 0.5 - 2 1 20 / 20 -66 -68 -69 98 48 5 440 cgd987hci 26 - 28 0.7 - 2 1 20 / 20 -66 -68 -66 98 48 5 440 3.6.4 catv optical receivers type frequency range (mhz) (1) s (v/w) (4) slope (db) fl (db) (1) rl out (db) imd3 (db) (3) imd2 (db) (3) @ f measured (mhz) @ p i(opt) (mw) nf @ f max (db) i tot (ma) connectors bgo807c 40 - 870 750 0 - 2 1 11 -71 -55 854.5 1 8.5 205 fc and sc bgo807ce 750 0 - 2 1 11 -69 -53 854.5 1 8.5 205 fc and sc 3.6.5 catv reverse hybrids type frequency range (mhz) (1) gain (db) slope (db) fl (db) (1) rl in /rl out (db) ctb (db) (3) x mod (db) (3) cso (db) (3) @ ch @ vo (dbmv) nf @ f max (db) i tot (ma) bgy68 5 - 75 29.2 - 30.8 -0.2 - 0.5 0.2 20 / 20 -68 -60 4 50 3.5 135 bgy66b 5 - 120 24.5 - 25.5 -0.2 - 0.5 0.2 20 / 20 -66 -54 14 48 5 135 bgy67 5 - 200 21.5 - 22.5 -0.2 - 0.5 0.2 20 / 20 -67 -60 22 50 5.5 215 bgy67a 23.5 - 24.5 -0.2 - 0.5 0.2 20 / 20 -67 -59 22 50 5.5 215 bgr269 34.5 - 35.5 -0.2 - 0.6 0.5 20 / 20 -57 -50 -66 28 50 5.5 160 bold = highly recommended product
95 nxp semiconductors rf manual 16 th edition products by function 3.7.1 rf power transistors for base stations device naming conventions rf power transistors for base stations why choose nxps rf power transistors for base stations: ` leading technology (generations 6, 7, and 8 of ldmos) ` highest efficiency ` best ruggedness ` advanced doherty amplifier designs ` very broad band (video bandwidth enhanced) devices ` industrys first 3.8 ghz doherty ` industry's first three-way, 900 mhz doherty ` industry's first 50 v, 600 w, single-package doherty nxp offers complete line-ups of rf power transistors operating from 800 mhz right up to 3.8 ghz for base stations, covering all cellular technologies [mc-gsm/edge, tdma, (td-s)cdma, w-cdma/umts, lte] and wimax infrastructures. b l f 6 g 22 l s -45 p r b n g v video bandwidth enhanced gullwing-shaped leads specialty option: current sense lead enhanced ruggedness push-pull device p1db power option: earless package option: low thermal resistivity operating frequency (in 100mhz; maximum) g: standard ldmos ldmos technology generation f: ldmos transistor in ceramic package c: ldmos transistor in air cavity plastic (acp) package d: fully integrated doherty amplifier m: mmic module l: high frequency power transistor b: semiconductor die made of si 3.7 rf power transistors new : rf power transistor selection guide on www.nxp.com/rfpower easy-to-use parametric filters help you choose the right rf power transistor for your design. 3.7.1.1 0.7 - 1.0 ghz line-up test signal performance type product f min (mhz) f max (mhz) p1db (w) matching vds (v) p l (w) bo (db) d (%) g p (db) test signal package blp7g22-10* driver 700 2200 10 - 28 2 7. 0 26 17 2-c wcdma sot1179 blm6g10 -30(g) mmic 920 960 30 i/o 28 2 11.8 11.5 29 2-c wcdma sot822 blf6g10l-40brn driver/final 700 1000 40 i 28 2.5 12.0 15 23 2-c wcdma sot1112 a blf6g10(s)-45 700 1000 45 i 28 1 16.5 8 23 2-c wcdma sot608 blp7g07s-140p(g)* final 700 900 140 o 28 35 6.0 28 19 2-c wcdma sot1224 blf8g10l(s)-300p* 850 960 300 i/o 28 60 7. 0 30 19 2-c wcdma sot539 blf8g10l(s)-160 920 960 160 i/o 30 35 6.6 29 19.7 2-c wcdma sot502 blf7g10l(s)-250 920 960 250 i/o 30 60 6.2 30.5 19.5 2-c wcdma sot502 blf6g10(ls)-200rn 688 1000 200 i 28 40 7. 0 28.5 20 2-c wcdma sot502 blf6g10(ls)-135rn 700 1000 135 i 28 26.5 7.1 28 21 2-c wcdma sot502 blf6h10l(s)-160 700 1000 160 - 50 45 5.5 30 20 2-c wcdma sot4 67 blf6g10(ls)-160rn 700 1000 160 i 32 32 7. 0 27 22.5 2-c wcdma sot502 blf8g10l(s)-160v* 700 1000 160 i/o 30 35 6.6 28 30 2-c wcdma sot1244 blf8g10ls-200gv* 700 1000 200 i/o 28 45 6.5 28 19.3 2-c wcdma sot1244c blf6g10l(s)-260prn 700 1000 260 i 28 40 8.1 26.5 22 2-c wcdma sot539 blf8g10ls-270gv* 700 1000 270 i/o 28 56 6.8 28 19.6 2-c wcdma sot1244c blf8g10ls-400pgv* 700 1000 400 i/o 28 79 7. 0 27 19.4 2-c wcdma sot1242c blp7g09s-140p(g)* 900 1000 140 o 28 35 6.0 28 19 2-c wcdma sot1224 bold red = new, highly recommended product * check status in section 3.1, as this type is not yet released for mass production
96 nxp semiconductors rf manual 16 th edition 3.7.1.2 1.4 - 1.7 ghz line-up test signal performance type product f min (mhz) f max (mhz) p1db (w) matching vds (v) p l (w) bo (db) d (%) g p (db) test signal package blf6g21-10g driver 1 2200 10 - 28 0.7 11.5 15 18.5 2-c wcdma sot538a blp7g22-10 700 2200 10 - 28 2 7. 0 26 17 2-c wcdma sot1179 blf6g15l-40brn driver/final 1450 1550 40 i/o 28 2.5 12.0 13 22 2-c wcdma sot1112 a blf6g15l(s)-40rn* 1450 1550 40 i/o 28 2.5 12.0 13 21.5 2-c wcdma sot1135 blf7g15ls-20 0 final 1450 1550 200 i/o 28 50 6.0 29 19.5 2-c wcdma sot502b blf6g15l-250pbrn 1450 1550 250 i/o 28 60 6.2 33 18.5 2-c wcdma sot1110a blf7g15ls-30 0p 1450 1550 300 i/o 28 85 5.5 31 18 2-c wcdma sot539b 3.7.1.3 1.8 - 2.0 ghz line-up test signal performance type product f min (mhz) f max (mhz) p1db (w) matching vds (v) p l (w) bo (db) d (%) g p (db) test signal package blf6g21-10g driver 1 2200 10 - 28 0.7 11.5 15 18.5 2-c wcdma sot538a blp7g22-10 700 2200 10 - 28 2 7. 0 26 17 2-c wcdma sot1179 blf6g20(s)-45 driver/final 1800 2000 45 i/o 28 2.5 12.6 14 19.2 2-c wcdma sot608 blf7g20l(s)-90p final 1427 2170 90 i/o 28 40 3.5 41 19.5 gsm edge sot1121 blf6g20(ls)-75 1800 2000 75 i/o 28 29.5 4.1 3 7. 5 19 gsm edge sot502 blf6g20(ls)-110 1800 2000 110 i/o 28 25 6.4 32 19 2-c wcdma sot502 blf6g20ls-140 1800 2000 140 i/o 28 35.5 6.0 30 16.5 2-c wcdma sot502b blf7g20ls-140p 1800 2000 140 i/o 28 60 3.7 41 17. 5 gsm edge sot1121b blf6g20(ls)-180rn 1800 2000 180 i/o 30 40 6.5 27 17. 2 2-c wcdma sot502 blf8g20l(s)-200v* 1800 2000 200 i/o 28 55 5.6 33 17. 5 2-c wcdma sot1120 blf6g20s-230prn 1800 2000 230 i/o 28 65 5.5 32 17. 5 2-c wcdma sot539b blf7g20ls-260a* 1800 1900 260 i/o 28 50 7. 2 44 15.5 2-c wcdma sot539b blf8g20ls-270gv* 1800 2000 270 i/o 28 50 7. 3 25 17. 8 2-c wcdma sot1244c blf8g20ls-270pgv* 1800 2000 270 i/o 28 56 6.8 28 19.4 2-c wcdma sot1242c blf7g20l(s)-200 1805 1990 200 i/o 28 55 5.6 33 18 2-c wcdma sot502 blf7g20l(s)-250p 1805 1880 250 i/o 28 70 5.5 35 18 2-c wcdma sot539 bld6g21l(s)-50 integrated doherty 2010 2025 50 o 28 8 8.0 43 14.5 td-scdma sot113 0 3.7.1.4 2.0 - 2.2 ghz line-up test signal performance type product f min (mhz) f max (mhz) p1db (w) matching vds (v) p l (w) bo (db) d (%) g p (db) test signal package blf6g21-10g driver 1 2200 10 - 28 0.7 11.5 15 18.5 2-c wcdma sot538a blp7g22-10* 700 2200 10 - 28 2 7. 0 26 17 2-c wcdma sot1179 blf3g21-6 1800 2200 6 - 26 6 0.0 39 15.5 cw sot538a blf3g21-30 1800 2200 30 - 26 30 0.0 35 13.5 cw sot4 67c blf6g22l(s)-40p driver/final 2110 2170 40 i/o 28 13.5 4.7 30 19 2-c wcdma sot1121 blf6g22l-40bn 2000 2200 40 i/o 28 2.5 12.0 16 19 2-c wcdma sot1112 a blf6g22(s)-45 2000 2200 45 i/o 28 2.5 12.6 13 18.5 2-c wcdma sot608 blm6g22-30(g) mmic 2100 2200 30 i/o 28 2 11.8 9 29.5 2-c wcdma sot822 blm7g22s-60pb(g)* 2000 2200 60 i/o 28 3.2 12.7 10 30 2-c wcdma sot1212 blf7g21ls-160 final 1800 2050 160 i/o 28 45 5.5 34 18 2-c wcdma sot1121b blf7g21l(s)-160p 1800 2050 160 i/o 28 45 5.5 34 18 2-c wcdma sot1121 blf6g22ls-75 2000 2200 75 i/o 28 17 6.4 30.5 18.7 2-c wcdma sot502b blf6g22ls-10 0 2000 2200 100 i/o 28 25 6.0 29 18.5 2-c wcdma sot502b blf7g22l(s)-100p 2000 2200 100 i/o 28 20 7. 0 28.5 19.1 2-c wcdma sot1121b blf6g22ls-130 2000 2200 130 i/o 28 30 6.4 28.5 17 2-c wcdma sot502b blf7g22l(s)-130 2000 2200 130 i/o 28 30 6.4 32 18.5 2-c wcdma sot502 blf7g22l(s)-160 2000 2200 160 i/o 28 43 5.7 30 18 2-c wcdma sot502b blf8g22ls-160bv* 2000 2200 160 i/o 32 55 4.6 30 18.5 2-c wcdma sot1120 b blf6g22(ls)-180pn 2000 2200 180 i/o 32 50 5.6 2 7. 5 17. 5 2-c wcdma sot539 blf6g22(ls)-180rn 2000 2200 180 i/o 30 40 6.5 25 16 2-c wcdma sot502 blf8g22ls-200gv* 2000 2200 200 i/o 28 48 6.2 28 20.2 2-c wcdma sot1244c blf8g22ls-270gv* 2000 2200 270 i/o 28 50 7. 3 26 17. 8 2-c wcdma sot1244c blf8g22ls-400pgv* 2000 2200 400 i/o 28 50 9.0 26 18 2-c wcdma sot1242c blf7g22l(s)-200 2110 2170 200 i/o 28 55 5.6 31 18.5 2-c wcdma sot502 blf7g22l(s)-250p 2110 2170 250 i/o 28 70 5.5 31 18.5 2-c wcdma sot539 bld6g22l(s)-50 integrated doherty 2110 2170 50 i/o 28 8 8.0 40 14 td-scdma sot113 0 3.7.1.5 2.3 - 2.4 ghz line-up test signal performance type product f min (mhz) f max (mhz) p1db (w) matching vds (v) p l (w) bo (db) d (%) g p (db) test signal package blf6g27-10(g) driver 2300 2700 10 i 28 2 7. 0 20 19 n-cdma/is95 sot975 blf7g24l(s)-100 final 2300 2400 100 i/o 28 20 7. 0 27 18 n-cdma/is95 sot502 blf7g24l(s)-140 2300 2400 140 i/o 28 30 6.7 26.5 18.5 n-cdma/is95 sot502 blf7g24l(s)-160p* 2300 2400 160 i/o 28 30 7. 3 2 7. 5 18.5 n-cdma/is95 sot539 blf8g24l(s)-200p* 2300 2400 200 i/o 28 60 5.2 30 16.5 1-c wcdma sot539 bold red = new, highly recommended product * check status in section 3.1, as this type is not yet released for mass production
97 nxp semiconductors rf manual 16 th edition products by function 3.7.1.6 2.5 - 2.7 ghz line-up test signal performance type product f min (mhz) f max (mhz) p1db (w) matching vds (v) p l (w) bo (db) d (%) g p (db) test signal package blf6g27-10(g) driver 2300 2700 10 i 28 2 7. 0 20 19 n-cdma/is95 sot975 blf6g27l(s)-40p driver/final 2500 2700 40 i/o 28 20 3.0 37 17. 5 1-c wcdma sot1121 blf6g27(s)-45 2500 2700 45 i/o 28 7 8.1 24 18 n-cdma/is95 sot608 blf6g27l(s)-50bn 2500 2700 50 i/o 28 3 12.2 14.5 16.5 2-c wcdma sot1112 blf7g27l(s)-75p final 2300 2700 75 i/o 28 12 8.0 26 17 n-cdma/is95 sot1121 blf6g27(ls)-75 2500 2700 75 i/o 28 9 9.2 23 17 n-cdma/is95 sot502 blf7g27l(s)-90p 2500 2700 90 i/o 28 16 7. 5 29 18.5 n-cdma/is95 sot1121 blf7g27ls-90pg* 2500 2700 90 i/o 28 16 7. 5 2 7. 5 17. 5 n-cdma/is95 sot1121c blf6g27(ls)-100 2500 2700 100 i/o 28 14 8.5 23 17 1-c wcdma sot502 blf7g27l(s)-100 2500 2700 100 i/o 28 25 6.0 28 18 n-cdma/is95 sot502 blf6g27(ls)-135 2500 2700 135 i/o 32 20 8.3 22.5 16 n-cdma/is95 sot502 blf7g27l(s)-140 2500 2700 140 i/o 28 30 6.7 22 16.5 n-cdma/is95 sot502 blf8g27ls-140 2500 2700 140 i/o 28 50 4.5 31 18 2-c wcdma sot502b blf8g27ls-140g* 2500 2700 140 i/o 28 50 4.5 31 18 2-c wcdma sot502e blf7g27l(s)-150p 2500 2700 150 i/o 28 30 7. 0 26 16.5 n-cdma/is95 sot539 blf8g27ls-200pgv* 2500 2700 200 i/o 28 32 8.0 23 17 2-c wcdma sot1242c blf8g27ls-280pgv* 2500 2700 280 i/o 28 50 7. 5 21 16.4 2-c wcdma sot1242c blf8g27ls-140v* 2600 2700 140 i/o 32 45 4.9 30 16.5 2-c wcdma sot1244b blf7g27l-200pb 2600 2700 200 i/o 32 65 4.9 29 16.5 2-c wcdma sot1110a 3.7.1.7 3.5 - 3.8 ghz line-up test signal performance type product f min (mhz) f max (mhz) p1db (w) matching vds (v) p l (w) bo (db) d (%) g p (db) test signal package blf6g38-10(g) driver 3400 3600 10 i/o 28 2 7. 0 20 14 n-cdma/is95 sot975 blf6g38(s)-25 3400 3800 25 i/o 28 4.5 7. 4 24 15 n-cdma/is95 sot608 blf6g38(ls)-50 driver/final 3400 3800 50 i/o 28 9 7. 4 23 14 n-cdma/is95 sot502 blf6g38(ls)-100 final 3400 3600 100 i/o 28 18.5 7. 3 21.5 13 n-cdma/is95 sot502 3.7.1.8 power ldmos doherty designs freq band (mhz) ppeak (dbm) pout-avg (dbm) vds (v) gain (db) drain efficiency (%) type main transistor peak transistor 728-821 mhz 790-821 55.5 47 28 19 42 sym 1/2 blf6g10l(s)-260prn 1/2 blf6g10l(s)-260prn 790-821 5 7. 2 49.5 32 20 42 sym blf6g10ls-200rn blf6g10ls-200rn 728-768 58 50 32 20.5 47 sym blf6g10ls-200rn blf6g10ls-200rn 869-960 mhz 920-960 46 38 28 24 51 sym blf6g21-10g blf6g21-10g 869-894 52 44 28 20 48 sym blf6g10s-45 blf6g10s-45 869-894 52.7 44.5 28 15 50 3-way blf6g10s-45 2x blf6g10s-45 920-960 54.7 47. 5 28 17. 3 48 sym blf6g10ls-135rn blf6g10ls-135rn 920-960 55.1 47.1 28 20.5 44 sym 1/2 blf6g10l(s)-260prn 1/2 blf6g10l(s)-260prn 920-960 56.2 48 28 18.5 40 sym blf6g10ls-135rn blf6g10ls-135rn 920-960 56.6 50 30 18.8 44.5 sym blf6g10ls-200rn blf6g10ls-200rn 920-960 57 49.2 28 15.8 48 sym blf7g10ls-250 blf7g10ls-250 920-960 5 7.1 49 30 16.1 46.7 asym blf8g10ls-160 blf7g10ls-250 920-960 5 7.1 49 28 15 48 3-way blf8g10ls-160 2x blf8g10ls-160 869-894 5 7. 2 49.3 28 16.5 49.5 sym blf7g10ls-250 blf7g10ls-250 920-960 57.3 49.3 30 16 50 asym blf8g10ls-160 blf7g10ls-250 869-894 5 7. 5 50.8 30 18 48.8 asym blf6g10ls-200rn blf7g10ls-250 925-960 5 7.7 49.7 28 20.5 40 sym / mppm blf6g10l(s)-260prn blf6g10l(s)-260prn 869-894 5 7.9 52 28 18.2 5 0.1 sym / mmpp blf6g10ls-260prn blf6g10ls-260prn 869-894 58 50 32 20.5 46 sym blf6g10-20 0rn blf6g10-20 0rn 869-894 58.9 52 28 16.1 49.1 asym blf6g10ls-200rn 2x blf7g10ls-250 925-960 58.9 50.9 32 22 47 sym / mmpp blf6g10l(s)-260prn blf6g10l(s)-260prn 869-894 59.2 50.4 28 16 52 3-way blf7g10ls-250 2x blf7g10ls-250 1476-1555 mhz 1526-1555 56.6 48.6 28 18.4 42 sym blf7g15ls-20 0 blf7g15ls-20 0 1476 -1511 58.1 49.6 28 16 42 asym blf7g15ls-20 0 blf7g15ls-30 0p 1476 -1511 58.6 50.6 32 16.5 42 sym blf6g15ls-250pbrn blf6g15ls-250pbrn 1805-1880 mhz (dcs) 1805-1880 48 40 28 15.4 42.4 sym 1/2 blf6g22ls-40p 1/2 blf6g22ls-40p 1805-1880 50 42.8 28 15.8 48 sym 1/2 blf7g20ls-90p 1/2 blf7g20ls-90p 1805-1880 52.5 44.5 28 16 44 sym 1/2 blf7g21ls-160p 1/2 blf7g21ls-160p 1845-1880 52.6 45 28 14.5 46.5 sym 1/2 blf7g21ls-160p 1/2 blf7g21ls-160p 1805-1880 54 47 28 16 49 sym blf6g20 l s -110 blf6g20 l s -110 1805-1880 55 49 28 15.5 47 sym blf7g21ls-160p blf7g21ls-160p 1805-1880 55.4 47. 5 31 16.3 49 asym blf7g20ls-90p blf7g21ls-160p 1805-1880 55.5 47 28 16 41 sym 1/2 blf7g20l(s)-250p 1/2 blf7g20l(s)-250p 1805-1880 5 6.1 4 8.1 30 15.2 48 asym blf7g20ls-90p blf7g20ls-200 1805-1880 56.5 49 28 32 45.5 asym blf6g21-10g blf7g20ls-200 bold red = new, highly recommended product * check status in section 3.1, as this type is not yet released for mass production
98 nxp semiconductors rf manual 16 th edition freq band (mhz) ppeak (dbm) pout-avg (dbm) vds (v) gain (db) drain efficiency (%) type main transistor peak transistor 1805-1880 5 7.1 49 28 14.3 45.1 3-way blf7g21ls-160p 2x blf7g21ls-160p 1805-1880 5 7. 5 49.5 30 16 42 sym blf7g20ls-200 blf7g20ls-200 1805-1880 5 7. 5 50.5 28 14 48 asym blf7g20ls-200 blf7g20ls-250p 1805-1880 5 7. 8 50.4 30 16 41.5 sym blf7g20ls-250p blf7g20ls-250p 1805-1880 5 7.9 50 32 15.5 37 sym / mmpp blf6g20-230prn blf6g20-230prn 1805-1880 58.2 50 28 16 42 sym mppm blf7g20ls-250p blf7g20ls-250p 1805-1880 58.6 51 28 16 47. 6 3-way blf7g20ls-200 2x blf7g20ls-200 1805-1880 58.7 51 30 15.8 47 3-way blf7g20ls-200 2x blf7g20ls-200 1930-1990 mhz (pcs) 1930-1990 53 45 28 16.5 40 sym blf6g20-75 blf6g20-75 1930-1990 54.3 47. 4 28 16.7 48.2 sym blf6g20 l s -110 blf6g20 l s -110 1930-1990 55.2 47. 2 28 16 40 sym 1/2 blf7g20ls-250p 1/2 blf7g20ls-250p 1930-1990 55.5 47. 5 28 14.5 46 asym blf7g20ls-90p blf7g20ls-200 1930-1990 55.7 49 28 14.5 48 asym blf7g21ls-160p blf7g20ls-200 1930-1990 56 48 31 15.3 38 sym blf6g20ls-140 blf6g20ls-140 1930-1990 56 48 28 14.8 45 asym blf7g20ls-140p blf7g20ls-200 1930-1990 57 49 30 17. 2 41 sym blf7g20ls-200 blf7g20ls-200 1930-1990 57 49.5 28 15.1 46 asym blf7g21ls-160p 2x blf7g21ls-160p 1930-1990 58.2 50 28 16 40 sym blf7g20ls-250p blf7g20ls-250p 1930-1990 56.8 49.1 28 32 42.3 asym blf6g21-10g blf7g20ls-200 1930-1990 58.5 50.5 30 15.7 43 3-way blf7g20ls-200 2x blf7g20ls-200 1805-2025 mhz (td-scdma) 2010-2025 47 39 28 14.4 41 sym bld6g21l(s)-50 bld6g21l(s)-50 1880-2025 50 42 28 17 46 sym 1/2 blf7g20l(s)-90p 1/2 blf7g20l(s)-90p 2010-2025 50 42 28 17. 2 47. 2 sym 1/2 blf7g20l(s)-90p 1/2 blf7g20l(s)-90p 1805-2050 52 44.5 28 15.2 41.5 sym 1/2 blf7g21ls-160p 1/2 blf7g21ls-160p 2010-2025 52.2 44 28 15.6 43 sym 1/2 blf7g21ls-160p 1/2 blf7g21ls-160p 1880 -1920 52.5 44.5 28 16 44 sym 1/2 blf7g21ls-160p 1/2 blf7g21ls-160p 2110-2170 mhz (umts / lte) 2110-2170 47 39 28 13 38 sym bld6g22l(s)-50 bld6g22l(s)-50 2110-2170 48.3 40 28 17 44 sym 1/2 blf6g22ls-40p 1/2 blf6g22ls-40p 2110-2170 48.5 40.5 28 17. 2 46 sym 1/2 blf6g22l-40p 1/2 blf6g22l-40p 2110-2170 54.7 46.5 28 16.5 43 sym blf6g22ls-10 0 blf6g22ls-10 0 2110-2170 54.9 47 28 17 43 sym blf7g22l(s)-130 blf7g22l(s)-130 2110-2170 55 47 28 17 43 sym 1/2 blf7g22ls-250p 1/2 blf7g22ls-250p 2110-2170 55 47 28 15.5 38 sym blf6g22l(s)-130 blf6g22l(s)-130 2110-2170 55.5 46.4 28 15 43 asym blf7g22l(s)-130 blf7g22l(s)-200 2110-2170 55.7 49 28 14.5 47 asym blf7g22ls-130 blf7g22ls-200 2110-2170 55.9 47.9 28 17. 3 42 sym blf7g22ls-160 blf7g22ls-160 2110-2170 56 48 28 15 48 3-way blf7g22l(s)-130 2x blf7g22l(s)-130 2110-2170 56.5 48.5 28 16.2 41 sym blf7g22l(s)-200 blf7g22l(s)-200 2110-2170 56.5 49 28 14.2 46 asym blf7g22ls-160 blf7g22ls-200 2110-2170 5 7. 2 49.2 28 16 47 3-way blf7g22ls-160 2x blf7g22l(s)-160 2110-2170 58 50 32 17. 5 40 sym blf7g22ls-250p blf7g22ls-250p 2300-2400 mhz (wibro / lte) 2300-2400 49.5 42 28 14.6 44 sym 1/2 blf7g27l(s)-75p 1/2 blf7g27l(s)-75p 2300-2400 53 45 28 15 42 .3 sym 1/2 blf7g24ls-160p 1/2 blf7g24ls-160p 2300-2400 5 4.1 47 28 15.5 45 sym blf7g24ls-10 0 blf7g24ls-10 0 2300-2400 55 47. 5 28 15.2 44 asym blf7g24ls-10 0 blf7g24ls-140 2300-2400 56.2 48.5 30 15 40 sym blf7g24ls-140 blf7g24ls-140 2300-2400 56.8 48.5 30 15 42 3-way blf7g24ls-10 0 2x blf7g24ls-100 2500-2700 mhz (wimax / lte) 2620-2690 46.9 39 28 14.6 46.2 asym blf6g27-10g 1/2 blf6g27ls-40p 2580-2620 48.2 40 28 14.4 41 sym 1/2 blf6g27ls-40p 1/2 blf6g27ls-40p 2620-2690 48.2 40 28 14.6 44 sym 1/2 blf6g27ls-40p 1/2 blf6g27ls-40p 2570-2620 49.5 42 28 15 43 sym 1/2 blf7g27l(s)-75p 1/2 blf7g27l(s)-75p 2500-2700 50 42 28 15 3 7. 5 sym blf6g27s-45 blf6g27s-45 2500-2700 50.3 42.3 28 14.5 39 sym 1/2 blf7g27ls-90p 1/2 blf7g27ls-90p 2500-2600 52 44 28 14 40 3-way blf6g27-45 2x blf6g27-45 2600-2700 52 44 28 14 40 3-way blf6g27-45 2x blf6g27-45 2600-2700 52 44 28 14 40 asym blf6g27-45 blf6g27(ls)-100 2500-2700 52.5 44.5 28 14 38 sym 1/2 blf7g27ls-150p 1/2 blf7g27ls-150p 2570-2620 5 4.1 47 28 15.2 43 sym blf7g27ls-10 0 blf7g27ls-10 0 2620-2690 55.2 47. 2 30 15 41 asym blf7g27ls-10 0 blf7g27ls-140 2545-2575 55.3 47. 3 28 15 41 asym blf7g27ls-10 0 blf7g27ls-140 2570-2620 55.4 47 28 15 40.4 asym blf7g27ls-10 0 blf7g27ls-140 3300-3800 mhz (wimax) 3400-3600 51 43 28 11.5 32 sym blf6g38-50 blf6g38-50 3500-3700 52 45 28 10 30 asym blf6g38ls-50 blf6g38ls-10 0
99 nxp semiconductors rf manual 16 th edition products by function 3.7.2 rf power transistors for broadcast / ism applications why choose nxps rf power transistors for broadcast / ism applications: nxp's leading ldmos technologies, together with advanced package concepts, enable power amplifiers that deliver best-in-class performance. we offer the industrys highest power and best ruggedness for all broadcast technologies. our portfolio includes transistors for ultra high frequency (uhf), very high frequency (vhf), and high frequency (hf) applications and covers ism frequency bands. ` highest power ` best ruggedness ` best broadband performance ` best-in-class design support ` very low thermal resistance design for unrivalled reliability 3.7.2.1 0-1000 mhz (uhf/vhf/hf/ism) ldmos line-up type product f min (mhz) f max (mhz) p1db (w) vds (v) p l (w) d (%) g p (db) test signal package blf571 driver 10 500 20 50 20 70 2 7, 5 cw sot4 67c blf645 final 1 1400 100 32 100 56 18 cw sot540a blf871(s) 1 1000 100 40 100 60 21 cw sot4 67 blf647 1 800 300 32 150 60 12,5 cw sot540a blf572xr(s)* 10 500 200 50 200 70 24 pulsed sot1121 blf647p(s)* 10 1400 200 32 200 70 18 pulsed sot1121 blf573(s) 10 500 300 50 300 70 2 7. 2 cw sot502 blf369 10 500 500 32 500 60 18 cw sot800-2 blf574 10 500 600 50 500 70 26.5 cw sot539a blf574xr(s)* 10 500 600 50 600 70 26 pulsed sot539 blf578 10 500 1200 50 1000 75 26 cw sot539a blf578xr(s)* 10 500 1400 50 1400 69 23 pulsed sot539 blf861a 470 860 150 32 150 60 14 cw sot540a blf174xr(s) 10 128 600 50 600 75 28 pulsed sot539 blf178xr(s) 10 128 1400 50 1400 72 29 pulsed sot539 3.7.2.2 uhf 470-860 mhz ldmos line-up type product f min (mhz) f max (mhz) p1db (w) vds (v) p l (w) d (%) g p (db) test signal package blf642 driver 1 1400 35 32 35 63 19 cw sot4 67c blf871(s) final 1 1000 100 40 100 60 21 cw sot4 67 blf881(s) 1 1000 140 50 140 49 21 cw sot4 67 blf878 470 860 300 42 300 46 21 cw sot979a blf884p(s) 470 860 300 50 150 46 21 cw sot1121 blf879p 470 860 500 42 200 47 21 cw sot539a blf888 470 860 500 50 250 46 19 cw sot979a blf888a(s) 470 860 600 50 250 46 21 cw sot539 blf888b(s) 470 860 600 50 250 46 21 cw sot539 3.7.2.3 2.45 ghz ism ldmos transistor line-up type product f min (mhz) f max (mhz) p1db (w) vds (v) p l (w) d (%) g p (db) test signal package blf25m612(g) driver 1 2500 12 28 12 60 19 cw sot975 blf2425m7l(s)140 final 2400 2500 140 28 140 52 17. 5 cw sot502 blf2425m6l(s)180p 2400 2500 180 28 180 55 12 cw sot539 blf2425m7l(s)200 2400 2500 200 28 200 52 15 cw sot502 blf2425m7l(s)250p 2400 2500 250 28 250 55 15 cw sot539 bold red = new, highly recommended product * check status in section 3.1, as this type is not yet released for mass production
100 nxp semiconductors rf manual 16 th edition 3.7.3 rf power transistors for aerospace and defense device naming conventions rf power transistors for aerospace and defense why choose nxps microwave rf power transistors ` high gain ` high efficiency ` highest reliability ` improved pulse droop and insertion phase ` improved ruggedness - overdrive without risk to +5 db ` reduces component count and helps simplify l- and s-band radar design ` uses non-toxic, rohs-compliant packages b l s 6 g 2731 s -120 g option: gullwing shaped leads p1db power s: earless package p: pallet frequency band (in 100mhz; here: 2700-3100) g: standard ldmos ( 28v) h: high voltage ldmos (50v) ldmos technology generation a: avionics frequency band operation l: l-band frequency operation s: s-band frequency operation l: high frequency power transistor b: semiconductor die made of si 3.7.3.1 avionics ldmos transistors type product f min (mhz) f max (mhz) p1db (w) vds (v) p l (w) d (%) g p (db) test signal package bl a1011-2 driver 1030 1090 2 36 2 - 16 pulsed sot538a bla1011-10 1030 1090 10 36 10 40 16 pulsed sot4 67c bla1011(s)-200r final 1030 1090 200 36 200 50 15 pulsed sot502 bl a6g1011-20 0 r 1030 1090 200 28 200 65 20 pulsed sot502a bl a6g1011l s -20 0 rg 1030 1090 200 28 200 65 20 pulsed sot502 bl a0912-250r 960 1215 250 36 250 50 13.5 pulsed sot502a bl a1011-3 0 0 1030 1090 300 32 300 57 16.5 pulsed sot957a bla6h0912-500 960 1215 500 50 450 50 17 pulsed sot634a bl a6h1011- 6 0 0 1030 1090 600 48 600 52 17 pulsed sot539a blu6h0410l(s)-600p 400 1000 600 50 600 57 20 pulsed sot539 3.7.3.2 l-band ldmos transistors type product f min (mhz) f max (mhz) p1db (w) vds (v) p l (w) d (%) g p (db) test signal package bll6h0514-25 driver 500 1400 25 50 25 50 19 pulsed sot4 67c bll1214-35 1200 1400 35 36 35 43 13 pulsed sot4 67c bll6h0514l(s)-130 final 500 1400 130 50 130 50 17 pulsed sot1135 bll1214-250r 1200 1400 250 36 250 47 13 pulsed sot502a bll6g1214l-250 1200 1400 250 36 250 45 15 pulsed sot502a bll6h1214l(s)-250 1200 1400 250 50 250 55 17 pulsed sot502 bll6h1214(ls)-500 1200 1400 500 50 500 50 17 pulsed sot539a bold red = new, highly recommended product
101 nxp semiconductors rf manual 16 th edition products by function type f min (mhz) f max (mhz) p out (w) matching vds (v) d (%) g p (db) test signal package applications clf1g0060-10* 0 6000 10 - 50 54 14 pulsed sot1227 cellular, wimax, ism, avionics, s-band, general purpose clf1g0060-30* 0 6000 30 - 50 54 14 pulsed sot1227 cellular, wimax, ism, avionics, s-band, general purpose clf1g0035-50* 0 3500 50 - 50 54 14.2 pulsed sot467 cellular, wimax, ism, avionics, s-band, general purpose clf1g0035-100* 0 3500 100 - 50 52 14.8 pulsed sot467 cellular, wimax, ism, avionics, s-band, general purpose 3.7.3.3 s-band ldmos transistors type product f min (mhz) f max (mhz) p1db (w) vds (v) p l (w) d (%) g p (db) test signal package bls6g2731-6g driver 2700 3100 6 32 6 33 15 pulsed sot975c bls6g3135(s)-20 3100 3500 20 32 20 45 15.5 pulsed sot608 bls6g2735l(s)-30 2700 3500 30 32 30 50 13 pulsed sot1135 bls2933-100 final 2900 3300 100 32 100 40 8 pulsed sot502a bls7g2325l-105 2300 2500 105 30 105 55 16.5 pulsed sot502a bls6g2731(s)-120 2700 3100 120 32 120 48 13.5 pulsed sot502 bls6g3135(s)-120 3100 3500 120 32 120 43 11 pulsed sot502 bls6g2731s-130 2700 3100 130 32 130 50 12 pulsed sot922-1 bls6g2933s-130 2900 3300 130 32 130 47 12.5 pulsed sot922-1 bls7g2933s-150 2900 3300 150 32 150 47 13.5 pulsed sot922-1 bls7g2729l(s)-350p 2700 2900 350 32 350 50 13.5 pulsed sot539 bls7g3135l(s)-350p 3100 3500 350 32 350 43 10 pulsed sot539 3.8 wireless microcontroller chipsets and modules type module/ single chip application tx power receiver sensitivity tx current rx current operating voltage form factor jn5148-001-m00 module 2.4-2.4835 ghz +2.5 dbm C95 dbm 15 ma 17.5 ma 2.3-3.6 v integral antenna 18 x 32 mm jennet & ieee802.15.4 jn5148-001-m03 module 2.4-2.4835 ghz +2.5 dbm C95 dbm 15 ma 17.5 ma 2.3-3.6 v u.fl connector 18 x 30 mm jennet & ieee802.15.4 jn5148-001-m04 module 2.4-2.4835 ghz +20 dbm C98 dbm 110 ma 23 ma 2.7-3.6 v u.fl connector 18 x 41 mm jennet & ieee802.15.4 jn5142-j01 single chip 2.4-2.4835 ghz +2.5 dbm C95 dbm 15 ma 17.5 ma 2.3-3.6 v 6 x 6 mm qfn40 jennet-ip jn5148-j01 single chip 2.4-2.4835 ghz +2.5 dbm C95 dbm 15 ma 17.5 ma 2.3-3.6 v 8 x 8 mm qfn56 jennet-ip jn5142-001 single chip 2.4-2.4835 ghz +2.5 dbm C95 dbm 15 ma 17.5 ma 2.3-3.6 v 6 x 6 mm qfn40 rf4ce & ieee802.15.4 jn5148-001 single chip 2.4-2.4835 ghz +2.5 dbm C95 dbm 15 ma 17.5 ma 2.3-3.6 v 8 x 8 mm qfn56 jennet & ieee802.15.4 jn5148-z01 single chip 2.4-2.4835 ghz +2.5 dbm C95 dbm 15 ma 17.5 ma 2.3-3.6 v 8 x 8 mm qfn56 zigbee pro 3.7.4 gallium nitride (gan) rf power amplifiers device naming conventions gan rf power amplifiers device naming conventions gan rf power amplifiers c l f 1g 0040 s # p p: push-pull indicator, p = push-pull type; no p means single-ended transistor nominal p3db in watts: eg 50 = 50w s earless type, s = earless; no s means eared package upper frequency, 10x ghz value: 35 = 3.5ghz; 60 = 6.0ghz lower frequency, 10x ghz value: 00 = 0ghz or dc; 40 = 4.0ghz 1g: technology generation: 1g = 1st generation f: package style: f = ceramic, p = overmolded plastic l: high frequency power transistor c: primary material identifier: c = wide band-gap compound materia ls, eg gan 35 to 60: 00 to 40: 2 to 1500: bold red = new, highly recommended product * check status in section 3.1, as this type is not yet released for mass production
102 nxp semiconductors rf manual 16 th edition 4. design support 4.1 knowing nxps rf portfolio beyond this rf manual, you can learn about nxps broad rf portfolio through the nxp technical academy, various webinars and the nxp channel on youtube. the nxp technical academy provides training modules where you can learn about our products and applications, watch hands-on trainings and even get certified! the training modules can be viewed on mobile devices as well. nxp provides rf webinars on a regular basis. (www.nxp.com/news/meet-nxp/webinars-and-podcasts.html#rf) on nxps youtube channel (www.youtube.com/user/ nxpsemiconductors), there are short videos that explain nxp's portfolio, application information, tips and tricks to optimize your systems performance, and more. 4.2 product selection on nxp.com every rf product has its own webpage on the nxp website. pages can be accessed in several ways: by product tree, by application area, or via cross-reference search. or, simply type 'nxp ' in the google search bar. product tree and parametric search the product tree (www.nxp.com/products/rf) categorizes the product by function. the parametric search tool allows you to refine the selection based on performance requirements. application area to find out what nxp offers in each application area, use the explore application section of the nxp website. cross reference nxp maintains a cross-reference of competitor products and nxp alternatives. this list can be searched online via the search tool bar on the nxp website or off-line by installing the x-reference-tool. this chapter will guide you through the available tools, documents, materials, and links that ease the design-in of our products. 4.3 product evaluation nxp offers a broad range of support material for evaluating rf products and optimizing the performance of your application. data sheets and application notes the first chapter of this rf manual includes application diagrams, recommended type numbers, and product highlights. more in-depth application information is available in the second chapter, in product data sheets or in the application notes section of the nxp website (www.nxp.com/products/ all_appnotes). simulation tools to help you evaluate our products in your specific application, nxp offers various simulation tools, including small-signal touchstone s-parameters and parametric models that let you customize the biasing conditions. the parametric models are based on best-in-class mextram models and rfldmos models developed by philips research, a recognized leader in physics- based models. the parametric models fully support ac, dc, s-parameter, harmonic balance, and time-domain simulations. these models allow designers to assess the performance of complex systems at an early stage of the development process. the models are available for advanced design system (ads), microwave office (mwo) and ansoft designer. spice versions of the parametric models, which can be used with almost any commercial design tool, are also available.
103 nxp semiconductors rf manual 16 th edition design support customer evaluation kits and samples several kits are available for evaluation of our products. boards are provided with industry-standard rf connectors to facilitate measurements and integration in your application. the features and content of each kit are described on the nxp website and are listed on the corresponding product page. on the customer evaluation kits page you can also find support materials, such as the latest user manuals and software updates. you can order small quantities of all products to build and evaluate prototypes. to obtain a kit or order samples, please contact your local nxp representative or authorized distributor. 4.4 additional design-in support if you need additional design-in support, please contact your local nxp sales representative or authorized distributor. you can also submit a question using the web form on the nxp website. 4.5 application notes product category filename description amplifiers an11152 reducing the spurs at rf_out caused by the biasing choke during fast switching on and off in tdd system amplifiers an1114 8 bgu7003 1900mhz to 2100mhz lna application plls and oscillators an1114 4 universal single lnb with tff101x fimod ic amplifiers an11135 replacing hmc625 by nxp bga7204 amplifiers an1113 0 bias module for 50 v gan demonstration boards transistors an11118 bfu725f/n1 1.5 ghz lna evaluation board amplifiers an11103 externally-matched 900 mhz lna using bgu7005 transistors an11102 bfu725f/n1 2.4 ghz lna evaluation board amplifiers an11101 bgu7007 gps front end evaluation board amplifiers an110 91 ohmic fm lna for embedded antenna in portable applications with bgu6102 amplifiers an11090 50 ohm fm lna for embedded antenna in portable applications with bgu6102 amplifiers an110 8 6 bgu7003 lna application for gps l2 band amplifiers an11072 bgu7003 400mhz and 900 mhz applicaiton amplifiers an110 6 8 bgu7005 matching options for improved lte jammer immunity transistors an110 6 6 sdars active antenna 1st stage lna with bfu730f, 2.33 ghz amplifiers an110 62 broadband dvb-t uhf power amplifier with the blf888a amplifiers an11035 50 ohm fm lna for embedded antenna in portable applications with bgu7003w amplifiers an1103 4 high ohmic fm lna for embedded antenna in portable applications with bgu7003w transistors an11024 sdars active antenna 2nd stage lna with bfu690, 2.33 ghz transistors an11010 single stage ku band lna using bfu730f transistors an110 07 single stage 5-6 ghz wlan lna with bfu730f transistors an110 0 6 single stage 2.3_2.7ghz lna with bfu730f amplifiers an10967 blf578 demo for 352 mhz 1kw cw power amplifiers an10953 blf645 10 mhz to 600 mhz 120 w amplifier amplifiers an10951 1805 mhz to 1880 mhz asymmetrical doherty amplifier with the blf7g20ls-90p and blf7g21ls-160p amplifiers an10945 174 mhz to 230 mhz dvb-t power amplifier with the blf881 amplifiers an10944 1930 mhz to 1990 mhz doherty amplifier using the blf7g20ls-200 amplifiers an10933 2.5 ghz to 2.7 ghz doherty power amplifier using the blf7g27ls-150p amplifiers an10923 1.5ghz doherty power amplifier for base station applications using the blf6g15l-250pbrn amplifiers an10921 blf7g20ls-200 doherty 1.805-1.88 ghz rf power amplifier amplifiers an10896 mounting and soldering of rf transistors amplifiers an10885 doherty rf performance analysis using the blf7g22ls-130 amplifiers an10882 dependency of blf578 gate bias voltage on temperature amplifiers an10869 broadband dvb-t uhf power amplifier with the blf888 amplifiers an10858 174 mhz to 230 mhz dvb-t power amplifier with the blf578 amplifiers an10847 doherty rf performance using the blf6g20-230prn amplifiers an10800 using the blf578 in the 88 mhz to 108 mhz fm band amplifiers an10714 using the blf574 in the 88-108 mhz fm band
104 nxp semiconductors rf manual 16 th edition type ads model microwave office model bla6g1011-200r available available bla6g1011l-200rg available available bla6g1011ls-200rg available available bla6h0912-500 available available bl a6h1011- 6 0 0 available available blf369 available blf3g21-6 available blf571 available available blf573 available available blf573s available available blf574 available available blf578 available available blf645 available available blf6g10 -135rn available available blf6g10-200rn available blf6g10-45 available available blf6g10l-260prn available blf6g10l-40brn available blf6g10ls-135rn available available blf6g10ls-200rn available blf6g10ls-260prn available blf6g10s-45 available available blf6g15l-250pbrn available blf6g15l-40brn available blf6g20 -180rn available blf6g20-230prn available blf6g20-45 available available blf6g20ls-180rn available blf6g20s-230prn available blf6g20s-45 available available blf6g21-10g available available blf6g22-180rn available blf6g22-45 available available blf6g22l-40p available blf6g22ls-180rn available blf6g22ls-40p available blf6g22s-45 available available blf6g27-10 available blf6g27-10g available available blf6g27-135 available blf6g27-45 available available blf6g27-75 available blf6g27l-40p available blf6g27ls-135 available blf6g27ls-40p available blf6g27ls-75 available blf6g27s-45 available available blf6g38-10 available blf6g38-10 0 available type ads model microwave office model blf6g38-10g available available blf6g38-25 available available blf6g38-50 available available blf6g38ls-10 0 available blf6g38ls-50 available available blf6g38s-25 available available blf7g15ls-300p available blf7g15ls-200 available blf7g20l-200 available blf7g20l-250p available blf7g20l-90p available blf7g20ls-140p available blf7g20ls-200 available blf7g20ls-250p available blf7g20ls-90p available blf7g21l-160p available blf7g21ls-160p available blf7g22l-130 available available blf7g22l-160 available blf7g22l-200 available blf7g22l-250p available blf7g22ls-130 available available blf7g22ls-160 available blf7g22ls-200 available blf7g22ls-250p available blf7g24l-10 0 available blf7g24l-140 available blf7g24ls-10 0 available blf7g24ls-140 available blf7g27l-100 available blf7g27l-140 available blf7g27l-150p available blf7g27l-200pb available blf7g27l-75p available blf7g27l-90p available blf7g27ls-100 available blf7g27ls-140 available blf7g27ls-150p available blf7g27ls-75p available blf7g27ls-90p available blf871 available available blf871s available available blf878 available available blf881 available available blf881s available available blf888 available blf888a available available blf888as available available bll6h0514-25 available available bll6h0514l-130 available available bll6h0514ls-130 available available bll6h1214-500 available bll6h1214l-250 available available bll6h1214ls-250 available available blm6g22-30 available bls6g2731-6g available bls6g2731s-130 available available bls6g3135-120 available available bls6g3135-20 available bls6g3135s-120 available available bls6g3135s-20 available 4.6 simulation models 4.6.1 simulation models for rf power devices updates of this overview are available in pdf format at: http://www.nxp.com/wcm_documents/models/rfpower_ model_overview.pdf
105 nxp semiconductors rf manual 16 th edition design support ads 2009 design kit v2.2 microwave office design kit ansoft designer design kit type evaluation board s-parameters spice model s-parameters spice model mextram model s-parameters s pice model m extram model s-parameters s pice model m extram model bfg67 bfg67/ x bfg10 bfg10w bfg10w/x bfg135 bfg198 bfg21w bfg25a/x bfg25aw/x bfg31 bfg35 bfg310/xr bfg310w/xr bfg325/xr bfg325w/xr bfg403w bfg410w bfg424f bfg424w bfg425w bfg480w bfg505 bfg505/x bfg505w/x bfg520 bfg520w bfg520x bfg520/xr bfg540 bfg540/x bfg540/xr bfg540w bfg541 bfg590 bfg590/x bfg591 bfg92a/x bfg93a bfg94 bfg97 bfm505 bfm520 b fq149 bfg18a bfq19 bfq540 bfq67 bfq67w bfr106 bfr505 bfr505t bfr520 bfr540 bfr92a bfr92aw bfr93a bfr93aw bfs17 bfs17a BFS17W bfs25a bfs505 bfs520 4.6.2 simulation models for rf bipolar wideband transistors
106 nxp semiconductors rf manual 16 th edition ads 2009 design kit v2.2 microwave office design kit ansoft designer design kit type evaluation board s-parameters spice model s-parameters spice model mextram model s-parameters s pice model m extram model s-parameters s pice model m extram model bfs540 bft25 bft25a bft92 bft92w bft93 bft93w bfu725f bfu725f/n1 bfu610f bfu630f bfu660f bfu690f bfu710f bfu730f bfu730lx bfu760f bfu790f pbr941 pbr951 prf947 prf949 prf957 ads 2009 design kit v2.2 microwave office design kit ansoft designer design kit type evaluation board s-parameters spice model s-parameters spice model mextram model s-parameters s pice model m extram model s-parameters s pice model m extram model bf1211 bf1211r bf1211wr bf1212 bf1212r bf1212wr bf511 bf513 bf862 bf904 bf908 bf909 bf998 ads 2009 design kit v2.2 microwave office design kit ansoft designer design kit type evaluation board s-parameters spice model s-parameters spice model mextram model s-parameters spice model mextram model s-parameters spice model mextram model bb145b bb149 bb149a bb156 bb179 bb179b bb201 bb202 bb207 bb208-2 4.6.3 simulation models for rf mosfet transistors 4.6.4 simulation models for rf varicap diodes 4.6.2 simulation models for rf bipolar wideband transistors (continued)
107 nxp semiconductors rf manual 16 th edition design support ads 2009 design kit v2.2 microwave office design kit ansoft designer design kit type evaluation board s-parameters spice model s-parameters spice model mextram model s-parameters s pice model m extram model s-parameters s pice model m extram model bga2001 bga2002 bga2003 bga 2711 bga2748 bga2771 bga2776 bga2709 bga2712 bga2714 bga2715 bga2716 bga2717 bga 2011 bga2012 bga2031 bga6289 bga6489 bga6589 bga2800 bga2801 bga2815 bga2816 bga2850 bga2865 bga2866 bga7024 bga7027 bga7124 bga7127 bgm1011 bgm1012 bgm1013 bgm1014 bgu6102 bgu7031 bgu7032 bgu7033 bgu7041 bgu7042 bgu7044 bgu7045 bgu7050 bgu7051 bgu7052 bgu7053 bgu7061 bgu7062 bgu7063 bgu7064 bgu7003 bgu7003w bgu7004 bgu7005 bgu7007 bgu8007 4.6.5 simulation models for rf mmic amplifiers
108 nxp semiconductors rf manual 16 th edition 5. cross-references & replacements nxp cross-references: http://www.nxp.com/xref/nxp?typenumber nxp end-of-life: http://www.nxp.com/products/eol/ 5.1 cross-references: manufacturer types versus nxp types in alphabetical order of manufacturer type abbreviations: base station broadcasts bs diode catv or catv pd catv ppa catv ppa/hg catv ra fet a&d mmic varicap wb trs 1-4 wb trs 5-7 base station power transistors broadcast power transistors band switch diode catv optical receiver catv power doubler catv push-pull amplifier catv push-pull amplifier high gain catv reverse amplifier field-effect transistor microwave power transistors monolithic microwave integrated circuit varicap diode wideband transistor 1-4 generation wideband transistor 5-7 generation manufacturer type manufacturer nxp type product family 3001 microsemi bls7g3135ls-350p a&d 3003 microsemi bls7g3135l-350p a&d 3005 microsemi bls6g3135s-20 a&d 10502 microsemi bl a1011-20 0 r a&d ah125 triquint bga7127 mmic sxb-4089 rfmd bga7127 mmic 0510-50a microsemi blf1043 broadcast 1011ld110a microsemi bl a1011-3 0 0 a&d 1011ld110 b microsemi bl a1011s -20 0 a&d 1014-12 microsemi bll1214-250r a&d 1014-2 microsemi bll1214-35 a&d 1014-6a microsemi bll6g1214l-250 a&d 10am20 microsemi blf1046 broadcast 1617-35 microsemi bll6g1214ls-250 a&d 1ss314 toshiba ba591 bs diode 1ss356 rohm ba591 bs diode 1ss381 toshiba ba277 bs diode 1ss390 rohm ba891 bs diode 1sv172 toshiba bap50-04 pin diode 1sv214 toshiba bb149 varicap 1sv214 toshiba bb149a varicap 1sv215 toshiba bb153 varicap 1sv228 toshiba bb201 varicap 1sv231 toshiba bb152 varicap 1sv232 toshiba bb148 varicap 1sv233 sanyo bap70-03 pin diode 1sv234 sanyo bap64-04 pin diode 1sv239 toshiba bb145b varicap 1sv241 sanyo bap64-02 pin diode 1sv246 sanyo bap64-04w pin diode manufacturer type manufacturer nxp type product family 1sv247 sanyo bap70-02 pin diode 1sv248 sanyo bap50-02 pin diode 1sv249 sanyo bap50-04w pin diode 1sv250 sanyo bap50-03 pin diode 1sv251 sanyo bap50-04 pin diode 1sv252 toshiba bap50-04w pin diode 1sv254 toshiba bb179 varicap 1sv263 sanyo bap50-02 pin diode 1sv264 sanyo bap50-04w pin diode 1sv266 sanyo bap50-03 pin diode 1sv267 sanyo bap50-04 pin diode 1sv269 toshiba bb148 varicap 1sv270 toshiba bb156 varicap 1sv271 toshiba bap50-03 pin diode 1sv278 toshiba bb179 varicap 1sv279 toshiba bb179 varicap 1sv282 toshiba bb178 varicap 1sv282 toshiba bb187 varicap 1sv283 toshiba bb178 varicap 1sv283 toshiba bb187 varicap 1sv284 toshiba bb156 varicap 1sv288 toshiba bb152 varicap 1sv290 toshiba bb182 varicap 1sv294 sanyo bap70-03 pin diode 1sv305 toshiba bb202 varicap 1sv307 toshiba bap51-03 pin diode 1sv308 toshiba bap51-02 pin diode 1t362 pec bb149 varicap 1t362a pec bb149a varicap 1t363a pec bb153 varicap
109 nxp semiconductors rf manual 16 th edition cross-references & replacements manufacturer type manufacturer nxp type product family 1t368a pec bb148 varicap 1t369 pec bb152 varicap 1t379 pec bb131 varicap 1t397 pec bb152 varicap 1t399 pec bb148 varicap 1t402 pec bb179b varicap 1t403 pec bb178 varicap 1t40 4a pec bb187 varicap 1t405a pec bb187 varicap 1t406 pec bb182 varicap 1t40 8 pec bb187 varicap 2324-12l microsemi bls6g2731s-120 a&d 2324-20 microsemi bls6g2731-6g a&d 2324-25 microsemi bls6g2731-120 a&d 2424-25 microsemi bls6g2731s-130 a&d 2f1g20ds rfhic cgd1040hi catv pd 2f1g20ds rfhic cgd1042h catv pd 2f1g20p rfhic cgy1041 catv pp 2f1g22ds rfhic cgd1042h catv pd 2f1g22ds rfhic cgd1042hi catv pd 2f1g22ds rfhic cgd982hci catv pd 2f1g23p rfhic cgy1041 catv pp 2f1g23p rfhic cgy1043 catv pp 2f1g24d rfhic cgd1044hi catv pd 2f1g24d rfhic cgd985hci catv pd 2f1g24ds rfhic cgd1044h catv pd 2f722ds rfhic bgd816l catv pd 2f8718p rfhic bgy885a catv pp 2f8719ds rfhic bgd812 catv pd 2f8720ds rfhic bgd814 catv pd 2f8723p rfhic bgy887 catv pp 2f8734p rfhic cgy888c catv pp 2n4856 standard bsr56 fet 2n4857 standard bsr57 fet 2n4858 standard bsr58 fet 2sc4094 renesas electronics bfg520/xr wb trs 1-4 2sc4095 renesas electronics bfg520/xr wb trs 1-4 2sc4182 renesas electronics BFS17W wb trs 1-4 2sc4184 renesas electronics BFS17W wb trs 1-4 2sc4185 renesas electronics BFS17W wb trs 1-4 2sc4186 renesas electronics bfr92aw wb trs 1-4 2sc4226 renesas electronics prf957 wb trs 1-4 2sc4227 renesas electronics bfq67w wb trs 1-4 2sc4228 renesas electronics bfs505 wb trs 1-4 2sc4247 toshiba bfr92aw wb trs 1-4 2sc4248 toshiba bfr92aw wb trs 1-4 2sc4315 toshiba bfg520/xr wb trs 1-4 2sc4320 toshiba bfg520/xr wb trs 1-4 2sc4321 toshiba bfq67w wb trs 1-4 2sc4325 toshiba bfs505 wb trs 1-4 2sc4394 toshiba prf957 wb trs 1-4 2sc4536 renesas electronics bfq19 wb trs 1-4 2sc4537 renesas electronics bfr93aw wb trs 1-4 2sc4592 renesas electronics bfg520/xr wb trs 1-4 2sc4593 renesas electronics bfs520 wb trs 1-4 2sc4703 renesas electronics bfq19 wb trs 1-4 2sc4784 renesas electronics bfs505 wb trs 1-4 2sc4807 renesas electronics bfq18a wb trs 1-4 2sc4842 toshiba bfg540w/xr wb trs 1-4 2sc4899 renesas electronics bfs505 wb trs 1-4 2sc4900 renesas electronics bfg520/xr wb trs 1-4 2sc4901 renesas electronics bfs520 wb trs 1-4 2sc4988 renesas electronics bfq540 wb trs 1-4 2sc 5 011 renesas electronics bfg540w/xr wb trs 1-4 2sc5012 renesas electronics bfg540w/xr wb trs 1-4 2sc5065 toshiba prf957 wb trs 1-4 2sc5085 toshiba prf957 wb trs 1-4 2sc5087 toshiba bfg520/xr wb trs 1-4 2sc5088 toshiba bfg540w/xr wb trs 1-4 2sc5090 toshiba bfs520 wb trs 1-4 2sc5092 toshiba bfg520/xr wb trs 1-4 2sc5095 toshiba bfs505 wb trs 1-4 2sc5107 toshiba bfs505 wb trs 1-4 2sc5463 toshiba bfq67w wb trs 1-4 2sc5508 renesas electronics bfu660f wb trs 5-7 2sc5508 renesas electronics bfu660f wb trs 5-7 2sc5593 renesas electronics bfg410w wb trs 5-7 manufacturer type manufacturer nxp type product family 2sc5594 renesas electronics bfg425w wb trs 5-7 2sc5623 renesas electronics bfg410w wb trs 5-7 2sc5624 renesas electronics bfg425w wb trs 5-7 2sc5631 renesas electronics bfq540 wb trs 1-4 2sc6023 sanyo bfg424w wb trs 5-7 2sk210bl renesas electronics pmbfj309 fet 2sk508 renesas electronics pmbfj308 fet 3sk290 renesas electronics bf998wr fet ad8376 adi bga7350 mmic ad8376 adi bga7351 mmic adl5354 adi bgx7221 mmic adl5356 adi bgx7221 mmic adl5358 adi bgx7220 mmic adl5372 adi bgx710x mmic adl5375 adi bgx710x mmic adl5812 adi bgx7221 mmic adrf660x adi bgx721x mmic ah115 -s8g triquint blf8g27ls-140v base station ah116 -s8g triquint blf6g10 -135rn base station ah118 triquint bga7024 mmic ah118 triquint bga7024 mmic ah118 triquint bga7124 mmic ah118 triquint bga7124 mmic ah125 triquint bga7027 mmic ah125 triquint bga7127 mmic ah212-eg triquint blf6g38-10 base station ah212-s8g triquint blf6g38-10 0 base station ah215 triquint bga7130 mmic ah215 triquint bga7130 mmic ah215-s8g triquint blf6g27-10 base station ah225-s8g triquint blf6g27-10g base station ah312-s8g triquint blf7g24l-10 0 base station ah314-g triquint blf6g27ls-100 base station ah315-g triquint blf6g10 -160rn base station ah315-g triquint blf6g10-200rn base station ah315-g triquint blf7g24l-140 base station ah315-g triquint blf7g24l-160p base station ah315-g triquint blf6g27ls-135 base station ah315-g triquint blf6g27ls-40p base station an26112 a panasonic bgu7045 mmic an26120a panasonic bgu7042 mmic an26122a panasonic bgu7045 mmic ba592 infineon ba591 bs diode ba595 infineon bap51-03 pin diode ba595 infineon bap70-03 pin diode ba597 infineon bap70-03 pin diode ba885 infineon bap70-03 pin diode ba892 infineon ba891 bs diode ba892-02v infineon ba277 pin diode ba892-02v infineon ba891 pin diode ba892v-02v-gs08 vishay ba891 pin diode ba895 infineon bap70-02 pin diode bar14-1 infineon bap70-03 pin diode bar15-1 infineon bap70-03 pin diode bar16 -1 infineon bap70-03 pin diode bar17 infineon bap50-03 pin diode bar50-02l infineon bap50lx pin diode bar50-02v infineon bap50-02 pin diode bar50-02v infineon bap50-03 pin diode bar50-02v infineon bap50-05 pin diode bar50-03w infineon bap70-02 pin diode bar60 infineon bap50-03 pin diode bar61 infineon bap50-03 pin diode bar63 infineon bap63-03 pin diode bar63-02l infineon bap63-02 pin diode bar63-02l infineon bap63lx pin diode bar63-02v infineon bap63-02 pin diode bar63-02w infineon bap63-02 pin diode bar63-03w infineon bap63-03 pin diode bar63-05 infineon bap63-05w pin diode bar63-05w infineon bap63-05w pin diode bar63v-02v-gs08 vishay bap63-02 pin diode bar63v-05w-gs08 vishay bap63-05w pin diode bar64-02lrh infineon bap64lx pin diode bar64-02v infineon bap64-02 pin diode bar64-02w infineon bap64-02 pin diode bar64-03w infineon bap64-03 pin diode
110 nxp semiconductors rf manual 16 th edition manufacturer type manufacturer nxp type product family bar64-04 infineon bap64-04 pin diode bar64-04w infineon bap64-04w pin diode bar64-05 infineon bap64-05 pin diode bar64-05w infineon bap64-05w pin diode bar64-06 infineon bap64-06 pin diode bar64-06w infineon bap64-06w pin diode bar64v-02v-gs08 vishay bap64-02 pin diode bar64v-04-gs08 vishay bap64-04 pin diode bar64v-05-gs08 vishay bap64-05 pin diode bar64v-06-gs08 vishay bap64-06 pin diode bar64v-06w-gs08 vishay bap64-06w pin diode bar65-02l infineon bap65lx pin diode bar65-02v infineon bap65-02 pin diode bar65-02w infineon bap65-02 pin diode bar65-03w infineon bap65-03 pin diode bar65v-02v-gs08 vishay bap65-02 pin diode bar66 infineon bap1321-04 pin diode bar67-02w infineon bap1321-02 pin diode bar67-03w infineon bap1321-03 pin diode bat18- 04 infineon bat18 pin diode bb304c renesas electronics bf1201wr fet bb304m renesas electronics bf1201r fet bb305c renesas electronics bf1201wr fet bb305m renesas electronics bf1201r fet bb403m renesas electronics bf909r fet bb501c renesas electronics bf1202wr fet bb501m renesas electronics bf1202r fet bb502c renesas electronics bf1202wr fet bb502m renesas electronics bf1202r fet bb503c renesas electronics bf1202wr fet bb503m renesas electronics bf1202r fet bb535 infineon bb149 varicap bb545 infineon bb149a varicap bb555 infineon bb179b varicap bb565 infineon bb179 varicap bb601m renesas electronics bf1202 fet bb639 infineon bb148 varicap bb639 infineon bb153 varicap bb640 infineon bb152 varicap bb641 infineon bb152 varicap bb659 infineon bb178 varicap bb664 infineon bb178 varicap bb664 infineon bb187 varicap bb669 infineon bb152 varicap bb814 infineon bb201 varicap bb831 infineon bb131 varicap bb833 infineon bb131 varicap bb835 infineon bb131 varicap bby58-02v infineon bb202 varicap bby65 infineon bb202 varicap bf1005r infineon bf1105r fet bf1005s infineon bf1105 fet bf1005sr infineon bf1105r fet bf2030 infineon bf1211 fet bf2030 infineon bf1212 fet bf2030r infineon bf1211r fet bf2030r infineon bf1212r fet bf2030w infineon bf1211wr fet bf2030w infineon bf1212wr fet bf2040 infineon bf909 fet bf2040r infineon bf909r fet bf2040w infineon bf909wr fet bf5020 infineon bf1212 fet bf5020r infineon bf1212r fet bf5020w infineon bf1212wr fet bf5030w infineon bf909wr fet bf770a infineon bfr93a wb trs 1-4 bf771 infineon pbr951 wb trs 1-4 bf771w infineon bfs540 wb trs 1-4 bf772 infineon bfg540 wb trs 1-4 bf775 infineon bfr92a wb trs 1-4 bf775a infineon bfr92a wb trs 1-4 bf775w infineon bfr92aw wb trs 1-4 bf851a standard bf861a fet bf851b standard bf861b fet bf851c standard bf861c fet bf994s vishay bf994s fet manufacturer type manufacturer nxp type product family bf996s vishay bf996s fet bf998 infineon bf998 fet bf998 vishay bf998 fet bf998-gs08 vishay bf998 fet bf998r vishay bf998r fet bf998r infineon bf998r fet bf998r-gs08 vishay bf998r fet bf998rw vishay bf998wr fet bf998w infineon bf998wr fet bfg135a infineon bfg135 wb trs 1-4 bfg193 infineon bfg198 wb trs 1-4 bfg194 infineon bfg31 wb trs 1-4 bfg196 infineon bfg541 wb trs 1-4 bfg19s infineon bfg97 wb trs 1-4 bfg235 infineon bfg135 wb trs 1-4 bfp180 infineon bfg505/x wb trs 1-4 bfp181 infineon bfg67/ x wb trs 1-4 bfp181t-gs08 vishay bfg67/ x wb trs 1-4 bfp182 infineon bfg67/ x wb trs 1-4 bfp183 infineon bfg520/x wb trs 1-4 bfp183r infineon bfg520/xr wb trs 1-4 bfp183t-gs08 vishay bfg520/x wb trs 1-4 bfp183tw-gs08 vishay bfg520w/x wb trs 1-4 bfp193 infineon bfg540/x wb trs 1-4 bfp193w infineon bfg540w/xr wb trs 1-4 bfp196t-gs08 vishay bfg540/x wb trs 1-4 bfp196tr-gs08 vishay bfg540/xr wb trs 1-4 bfp196trw-gs08 vishay bfg540w/xr wb trs 1-4 bfp196tw-gs08 vishay bfg540w/x wb trs 1-4 bfp196w infineon bfg540w/xr wb trs 1-4 bfp280 infineon bfg505/x wb trs 1-4 bfp405 infineon bfg410w wb trs 5-7 bfp420 infineon bfg425w wb trs 5-7 bfp450 infineon bfg480w wb trs 5-7 bfp620 infineon bfu660f wb trs 5-7 bfp640 infineon bfu630f, bfu660f wb trs 5-7 bfp650 infineon bfu690f, bfu760f, bfu790f wb trs 5-7 bfp67-gs08 vishay bfg67/ x wb trs 1-4 bfp67r-gs08 vishay bfg67/ x wb trs 1-4 bfp720 infineon bfu710f, bfu730f wb trs 5-7 bfp740 infineon bfu710f, bfu730f wb trs 5-7 bfp740 infineon bfu725f wb trs 5-7 bfp740f infineon bfu725f wb trs 5-7 bfp750 infineon bfu690f, bfu760f, bfu790f wb trs 5-7 bfp81 infineon bfg92a/x wb trs 1-4 bfp92a-gs08 vishay bfg92a/x wb trs 1-4 bfp93a infineon bfg93a/x wb trs 1-4 bfp93a-gs08 vishay bfg93a/x wb trs 1-4 bfq193 infineon bfq540 wb trs 1-4 bfq19s infineon bfq19 wb trs 1-4 bfq67-gs08 vishay bfq67w wb trs 1-4 bfr106 infineon bfr106 wb trs 1-4 bfr180 infineon bfr505 wb trs 1-4 bfr180w infineon bfs505 wb trs 1-4 bfr181 infineon bfr520 wb trs 1-4 bfr181t-gs08 vishay bfr520 wb trs 1-4 bfr181tw-gs08 vishay bfs520 wb trs 1-4 bfr181w infineon bfs520 wb trs 1-4 bfr182 infineon pbr941 wb trs 1-4 bfr182w infineon prf947 wb trs 1-4 bfr183 infineon pbr951 wb trs 1-4 bfr183t-gs08 vishay pbr951 wb trs 1-4 bfr183tw-gs08 vishay prf957 wb trs 1-4 bfr183w infineon prf957 wb trs 1-4 bfr193 infineon pbr951 wb trs 1-4 bfr193tw-gs08 vishay prf957 wb trs 1-4 bfr193w infineon prf957 wb trs 1-4 bfr196t-gs08 vishay bfr540 wb trs 1-4 bfr196tw-gs08 vishay bfs540 wb trs 1-4 bfr35ap infineon bfr92a wb trs 1-4 bfr92al freescale bfr92a wb trs 1-4 bfr92aw-gs08 vishay bfr92aw wb trs 1-4 bfr92p infineon bfr92a wb trs 1-4 bfr92w infineon bfr92aw wb trs 1-4 bfr93a infineon bfr93a wb trs 1-4
111 nxp semiconductors rf manual 16 th edition cross-references & replacements manufacturer type manufacturer nxp type product family bfr93al freescale bfr93a wb trs 1-4 bfr93aw infineon bfr93aw wb trs 1-4 bfr93aw-gs08 vishay bfr93aw wb trs 1-4 bfr93-gs08 vishay bfr93a wb trs 1-4 bfs17-gs08 vishay bfs17 wb trs 1-4 bfs17-gs08 vishay bfs17a wb trs 1-4 bfs17l freescale bfs17 wb trs 1-4 bfs17p infineon bfs17a wb trs 1-4 BFS17W infineon BFS17W wb trs 1-4 BFS17W-gs08 vishay BFS17W wb trs 1-4 bfs481 infineon bfm505 wb trs 1-4 bfs483 infineon bfm520 wb trs 1-4 bft92 infineon bft92 wb trs 1-4 bft93 infineon bft93 wb trs 1-4 bg3123 infineon bf1203 fet bg3123r infineon bf1203 fet bg3130 infineon bf1214 fet bg3130r infineon bf1214 fet bg3430r infineon bf1207 fet bg5120k infineon bf1210 fet bg5130r infineon bf1206 fet bg5412k infineon bf1208d fet bga428 infineon bgu7003 mmic bga461 infineon bgu7003 mmic bga615 infineon bgu7007 mmic bga715 infineon bgu8007 mmic bga915 infineon bgu7005 mmic bgb707 infineon bgu6102 mmic bgb717 infineon bgu6102 mmic bic701c renesas electronics bf1105wr fet bic701m renesas electronics bf1105r fet bic702c renesas electronics bf1105wr fet bic702m renesas electronics bf1105r fet bic801m renesas electronics bf1105 fet bsr111 standard pmbfj111 fet bsr112 standard pmbfj112 fet bsr113 standard pmbfj113 fet bsr174 standard pmbfj174 fet bsr175 standard pmbfj175 fet bsr176 standard pmbfj176 fet bsr177 standard pmbfj177 fet ca901 standard bgx885n catv ppa ca901a standard bgx885n catv ppa cmm6004-sc mimix bga7024 mmic cmm6004-sc mimix bga7124 mmic cmm6004-sc mimix bga7124 mmic cmm6004-sc mimix bga7204 mmic cmy91 infineon bga2022 mmic cmy91 infineon bga2022 wb trs 1-4 cxe1089z rfmd bga6489 mmic cxe1089z rfmd bga6589 mmic d10040180gt rfmd cgd1042h catv pd d10040180gth rfmd cgd1042h catv pd d10040200gt rfmd cgd1042h catv pd d10040200gth rfmd cgd1042h catv pd d10040200p1 rfmd cgd1042h catv pd d10040200ph1 rfmd cgd1042h catv pd d10040220gt rfmd cgd1042h catv pd d10040220gth rfmd cgd1042h catv pd d10040230p1 rfmd cgd1042h catv pd d10040230ph1 rfmd cgd1042h catv pd d10040240gt rfmd cgd1044h catv pd d10040240gth rfmd cgd1044h catv pd d10040250gt rfmd cgd1044h catv pd d10040250gth rfmd cgd1044h catv pd d10040270gt rfmd cgd1044h catv pd d10040270gth rfmd cgd1044h catv pd d10040270gtl rfmd cgd1044h catv pd d8740180gt rfmd cgd942c catv pd d8740180gth rfmd cgd942c catv pd d8740220gt rfmd cgd942c catv pd d8740220gth rfmd cgd942c catv pd d8740240gt rfmd cgd944c catv pd d8740240gth rfmd cgd944c catv pd d8740250gt rfmd cgd944c catv pd d8740250gth rfmd cgd944c catv pd d8740270gt rfmd cgd944c catv pd manufacturer type manufacturer nxp type product family d8740270gth rfmd cgd944c catv pd d8740320gt rfmd cgd888c catv pd d8740320gth rfmd cgd888c catv pd ec2c03c sanyo bb145b varicap fsd273ta skyworks bb148 varicap fsd273ta skyworks bb178 varicap hbfp0405 agilent bfg410w wb trs 5-7 hbfp0420 agilent bfg425w wb trs 5-7 hbfp0450 agilent bfg480w wb trs 5-7 hmc454st89e hittite bga7027 mmic hmc454st89e hittite bga7127 mmic hmc454st89e hittite bga7127 mmic hmc617lp3 hittite bgu7051 mmic hmc618lp3 hittite bgu7052 mmic hmc625 hittite bga7204 mmic hmc667lp2 hittite bgu7053 mmic hsc277 renesas electronics ba277 bs diode hsmp3800 agilent bap70-03 pin diode hsmp3802 agilent bap50-04 pin diode hsmp3804 agilent bap50-05 pin diode hsmp3810 agilent bap50-03 pin diode hsmp3814 agilent bap50-05 pin diode hsmp381b agilent bap50-03 pin diode hsmp381c agilent bap50-05 pin diode hsmp381f agilent bap64-05w pin diode hsmp3820 agilent bap1321-03 pin diode hsmp3822 agilent bap1321-04 pin diode hsmp3830 agilent bap64-03 pin diode hsmp3832 agilent bap64-04 pin diode hsmp3833 agilent bap64-06 pin diode hsmp3834 agilent bap64-05 pin diode hsmp3860 agilent bap50-03 pin diode hsmp3862 agilent bap50-04 pin diode hsmp3864 agilent bap50-05 pin diode hsmp386b agilent bap50-02 pin diode hsmp386e agilent bap50-04w pin diode hsmp386l agilent bap50-05w pin diode hsmp3880 agilent bap51-03 pin diode hsmp3890 agilent bap51-03 pin diode hsmp3892 agilent bap64-04 pin diode hsmp3894 agilent bap64-05 pin diode hsmp3895 agilent bap51-02 pin diode hsmp389b agilent bap51-02 pin diode hsmp389c agilent bap64-04 pin diode hsmp389f agilent bap51-05w pin diode hvb14s renesas electronics bap50-04w pin diode hvc131 renesas electronics bap65-02 pin diode hvc132 renesas electronics bap51-02 pin diode hvc200a renesas electronics bb178 varicap hvc200a renesas electronics bb187 varicap hvc202a renesas electronics bb179 varicap hvc202b renesas electronics bb179b varicap hvc300a renesas electronics bb182 varicap hvc300b renesas electronics bb182 varicap hvc306a renesas electronics bb187 varicap hvc306b renesas electronics bb187 varicap hvc355b renesas electronics bb145b varicap hvc359 renesas electronics bb202 varicap hvc363a renesas electronics bb178 varicap hvc376b renesas electronics bb198 varicap hvc376b renesas electronics bb202 varicap hvd132 renesas electronics bap51-02 pin diode hvu131 renesas electronics bap65-03 pin diode hvu132 renesas electronics bap51-03 pin diode hvu202(a) renesas electronics bb149 varicap hvu202(a) renesas electronics bb149a varicap hvu300a renesas electronics bb152 varicap hvu307 renesas electronics bb148 varicap hvu315 renesas electronics bb148 varicap hvu316 renesas electronics bb131 varicap hvu363a renesas electronics bb148 varicap hvu363a renesas electronics bb153 varicap hvu363b renesas electronics bb148 varicap ib0912l200 integra bl a1011-20 0 r a&d ib0912l30 integra bl a1011-2 a&d ib0912l70 integra bl a1011-20 0 a&d ib0912m210 integra bl a0912-250 a&d
112 nxp semiconductors rf manual 16 th edition manufacturer type manufacturer nxp type product family ib0912m350 integra bl a0912-250r a&d ib0912m500 integra bla6h0912-500 a&d ib0912m600 integra bla1011-10 a&d ib0912m70 integra bll6h0514ls-130 a&d ib1011s1000 integra bla6g1011ls-200rg a&d ib1011s15 0 0 integra bl a6h1011- 6 0 0 a&d ib1011s19 0 integra bl a1011s -20 0 a&d ib1011s25 0 integra bl a1011s -20 0 r a&d ib1011s35 0 integra bla6g1011-200r a&d ib1011s70 integra bl a1011-3 0 0 a&d ib1214m130 integra bll6h1214-500 a&d ib1214m150 integra bll6g1214l-250 a&d ib1214m300 integra bll6g1214ls-250 a&d ib1214m32 integra bll1214-250r a&d ib1214m375 integra bll6h1214l-250 a&d ib1214m55 integra bll1214-35 a&d ib1214m6 integra bll1214-250 a&d ib2729m25 integra bls7g2729ls-350p a&d ib2729m5 integra bls7g2729l-350p a&d ib2731m110 integra bls6g2731-6g a&d ib2731mh110 integra bls6g2731s-130 a&d ib2731mh25 integra bls6g2731s-120 a&d ib2931mh155 integra bls6g2933s-130 a&d ib2931mh55 integra bls2933-100 a&d ib2934m100 integra bls7g2933s-150 a&d ib3135mh10 0 integra bls7g3135ls-350p a&d ib3135mh20 integra bls6g3135-20 a&d ib3135mh45 integra bls6g3135s-120 a&d ib3135mh5 integra bls6g3135-120 a&d ib3135mh65 integra bls6g3135s-20 a&d ib3135mh75 integra bls7g3135l-350p a&d ib450s300 integra blf578xr broadcast ib450s500 integra blf544 broadcast idm165l650 integra blf1043 broadcast idm175cw30 0 integra blf369 broadcast idm265l650 integra blf1046 broadcast idm30512cw100 integra blf574xrs broadcast idm30512cw20 integra blf574 broadcast idm30512cw50 integra blf574xr broadcast idm500cw120 integra blf572xr broadcast idm500cw150 integra blf572xrs broadcast idm500cw200 integra blf573 broadcast idm500cw300 integra blf573s broadcast idm500cw80 integra blf571 broadcast ild0506el350 integra blf988 broadcast ild0912m150hv integra bll6h0514-25 a&d ild0912m15hv integra blu6h0410ls-600p a&d ild0912m400hv integra bll6h0514l-130 a&d ild0912m60 integra blu6h0410l-600p a&d ild1214m10 integra bll6h1214ls-250 a&d ild1214m60 integra bll6h1214ls-500 a&d ild2731m140 integra bls6g2731-120 a&d ild2735m120 integra bls6g2735l-30 a&d ild2933m130 integra bls6g2735ls-30 a&d ina-51063 agilent bga2001 mmic jdp2s01e toshiba bap65-02 pin diode jdp2s01u toshiba bap65-03 pin diode jdp2s02afs toshiba bap51-02 pin diode jdp2s02as toshiba bap51-03 pin diode jdp2s02t toshiba bap63-02 pin diode jdp2s04e toshiba bap50-02 pin diode jds2s03s toshiba ba891 bs diode kp2310r toko bap64-04w pin diode ktk920* kec bf110 8 fet ktk920bt kec bf110 8 fet ktk920t kec bf110 8r fet kv1835e toko bb199 varicap ltc5590 linear technology bgx7220 mmic ltc5591 linear technology bgx7221 mmic ltc5592 linear technology bgx7221 mmic ma2s077 standard ba277 bs diode ma2s357 panasonic bb178 varicap ma2s357 panasonic bb187 varicap ma2s372 panasonic bb179 varicap ma2s374 panasonic bb182 varicap ma2sv01 renesas electronics bb202 varicap ma357 panasonic bb153 varicap manufacturer type manufacturer nxp type product family ma366 panasonic bb148 varicap ma368 panasonic bb131 varicap ma372 panasonic bb149 varicap ma372 panasonic bb149a varicap ma4cp101a panasonic bap65-03 pin diode ma4p274-1141 panasonic bap51-03 pin diode ma4p275-1141 panasonic bap65-03 pin diode ma4p275ck-287 panasonic bap65-05 pin diode ma4p277-1141 panasonic bap70-03 pin diode ma4p278-287 panasonic bap70-03 pin diode ma4p789-1141 panasonic bap1321-03 pin diode ma4p789st-287 panasonic bap1321-04 pin diode max19985a maxim bgx7220 mmic max19995 maxim bgx7221 mmic max2634 maxim bgu6102 mmic max2657 maxim bgu8007 mmic max2658 maxim bgu7005 mmic max2659 maxim bgu7005 mmic max2667 maxim bgu8007 mmic max2687 maxim bgu7005 mmic max2694 maxim bgu7005 mmic mc7712 renesas electronics bgy785a catv ppa mc7716 renesas electronics bgy787 catv ppa mc7722 renesas electronics bgy785a catv ppa mc7726 renesas electronics bgy787 catv ppa mc-7831 renesas electronics bgy885a catv pp mc7831-ha renesas electronics bgy1085a catv pp mc-7831-ha renesas electronics bgy1085a catv pp mc-7832 renesas electronics bgy887 catv pp mc7832-ha renesas electronics cgy1041 catv pp mc-7832-ha renesas electronics cgy1041 catv pp mc-7833 renesas electronics bgy887b catv pp mc-7836 renesas electronics bgy887b catv pp mc-7836 renesas electronics cgy1047 catv pp mc-7846 renesas electronics cgd942c catv pd mc-7847 renesas electronics cgd944c catv pd mc7852 renesas electronics bgy885a catv ppa mc7866 renesas electronics bgd816l catv pd mc-7882 renesas electronics bgd814 catv pd mc-7883 renesas electronics cgd942c catv pd mc-7884 renesas electronics cgd944c catv pd mc-7891 renesas electronics cgd1042h catv pd mc7893 renesas electronics cgd1042hi catv pd mc7893 renesas electronics cgd982hci catv pd mc-7893 renesas electronics cgd1042h catv pd mc7894 renesas electronics cgd1044hi catv pd mc7894 renesas electronics cgd985hci catv pd mc-7894 renesas electronics cdg1044h catv pd mc7896 renesas electronics cgd1046hi catv pd mc7896 renesas electronics cgd987hci catv pd mc-7896 renesas electronics cgd1044h catv pd mch4009 sanyo bfg424f wb trs 5-7 md7ic18120gnr1 freescale blf6g20 -180rn base station md7ic18120nr1 freescale blf6g20-230prn base station md7ic2050gnr1 freescale blf7g20ls-200 base station md7ic2110 0 gnr1 freescale blf6g22-45 base station md7ic2110 0 nbr1 freescale blf6g22l-40bn base station md7ic2110 0 nr1 freescale blf6g22ls-40bn base station md7ic2250gnr1 freescale blf6g22ls-10 0 base station md7ic2250nbr1 freescale blf6g22ls-130 base station md7ic2250nr1 freescale blf6g22ls-180pn base station md7ic2755gnr1 freescale blf6g27-10 0 base station md7ic2755nr1 freescale blf6g27-135 base station md8ic970gnr1 freescale blf8g10ls-400pgv base station md8ic970nr1 freescale blf8g10l-300p base station mds60l microsemi bl a1011s -20 0 r a&d mga631p8 avago bgu7051 mmic mga632p8 avago bgu7052 mmic mga632p8 avago bgu7053 mmic mhvic915nr2 freescale blf6g10ls-135rn base station mhw10186n freescale bgy1085a catv pp mhw10236n freescale cgy1043 catv pp mhw10247an freescale cgd1044h catv pd mhw10276n freescale cgy1047 catv pp mhw1224 freescale bgy67 catv ra mhw1244 freescale bgy67a catv ra mhw1253la freescale bgy67a catv ra
113 nxp semiconductors rf manual 16 th edition cross-references & replacements manufacturer type manufacturer nxp type product family mhw1254l freescale bgy68 catv ra mhw1254l a freescale bgy68 catv ra mhw1304l freescale bgy68 catv ra mhw1304l a freescale bgy68 catv ra mhw1304lan freescale bgy68 catv ra mhw1346 freescale bgy67a catv ra mhw1353la freescale bgy67a catv ra mhw1354l a freescale bgy68 catv ra mhw7182b freescale bgy785a catv ppa mhw7182c freescale bgy785a catv ppa mhw7185c2 freescale bgd712 catv pd mhw7185cl freescale bgd712 catv pd mhw7205c freescale bgd714 catv pd mhw7205cl freescale bgd714 catv pd mhw7205cln freescale bgd714 catv pd mhw7222 freescale bgy787 catv ppa mhw7222a freescale bgy787 catv ppa mhw7222b freescale bgy787 catv ppa mhw7242a freescale bge787b catv ppa/hg mhw7272a freescale bge787b catv ppa/hg mhw7292 freescale bge787b catv ppa/hg mhw7292a freescale bge787b catv ppa/hg mhw7292an freescale bge787b catv ppa/hg mhw8182b freescale bgy885a catv ppa mhw8182c freescale bgy885a catv ppa mhw8182cn freescale bgy885a catv pp mhw8185 freescale bgd814 catv pd mhw8185l freescale bgd812 catv pd mhw8188an freescale cgd942c catv pd mhw8205 freescale bgd814 catv pd mhw820l freescale bgd814 catv pd mhw8222bn freescale bgy887 catv pp mhw8227a freescale cgd942c catv pd mhw8227an freescale cgd942c catv pd mhw8247a freescale cgd944c catv ppa mhw8247an freescale cgd944c catv pd mhw8292 freescale bgy887b catv ppa mhw8342 freescale bgy888 catv ppa mhw8342n freescale cgy888c catv pp mhw9182b freescale bgy1085a catv ppa mhw9182c freescale bgy1085a catv ppa mhw9182cn freescale bgy1085a catv pp mhw9186 freescale bgy885a catv ppa mhw9186a freescale bgy885a catv ppa mhw9187n freescale cgd942c catv pd mhw9188an freescale cgd942c catv pd mhw9188n freescale cgd942c catv pd mhw9227an freescale cgd942c catv pd mhw9242a freescale cgd1042 catv pd mhw9247 freescale cgd944c catv pd mhw9247a freescale cgd944c catv pd mhw9247an freescale cgd944c catv pd mhw9247n freescale cgd944c catv pd mhwj7185a freescale bgd712 catv pd mhwj7205a freescale bgd714 catv pd mhwj7292 freescale bge787b catv ppa/hg mhwj9182 freescale bgy1085a catv ppa mmbf4391 freescale pmbf4391 fet mmbf4392 freescale pmbf4392 fet mmbf4393 freescale pmbf4393 fet mmbf4860 freescale pmbfj112 fet mmbf5484 freescale bfr31 fet mmbfj113 freescale pmbfj113 fet mmbfj174 freescale pmbfj174 fet mmbfj175 freescale pmbfj175 fet mmbfj176 freescale pmbfj176 fet mmbfj177 freescale pmbfj177 fet mmbfj308 freescale pmbfj308 fet mmbfj309 freescale pmbfj309 fet mmbfj310 freescale pmbfj310 fet mmbfu310 freescale pmbfj310 fet mmbr5031l freescale bfs17 wb trs 1-4 mmbr5179l freescale bfs17a wb trs 1-4 mmbr571l freescale pbr951 wb trs 1-4 mmbr901l freescale bfr92a wb trs 1-4 mmbr911l freescale bfr93a wb trs 1-4 mmbr920l freescale bfr93a wb trs 1-4 manufacturer type manufacturer nxp type product family mmbr931l freescale bft25a wb trs 1-4 mmbr941bl freescale pbr941 wb trs 1-4 mmbr941l freescale pbr941 wb trs 1-4 mmbr951al freescale pbr951 wb trs 1-4 mmbr951l freescale pbr951 wb trs 1-4 mmbv105glt1 onsemicond. bb156 varicap mmbv109lt1 onsemicond. bb148 varicap mmg2001nt1 freescale bgd816l catv pd mmg2001t1 freescale bgd816l catv pd mmg3004nt1 freescale bga7027 mmic mmg3004nt1 freescale bga7127 mmic mmg3004nt1 freescale bga7127 mmic mmg3014 freescale bga7024 mmic mmg3014 freescale bga7124 mmic mmg3014 freescale bga7124 mmic mmg3014 freescale bga7204 mmic mrf282zr1 freescale blf7g20ls-250p base station mrf577 freescale prf957 wb trs 1-4 mrf5811l freescale bfg93a/x wb trs 1-4 mrf5p21045nr1 freescale blf6g22ls-180rn base station mrf5s9100nbr1 freescale blf6g10 -135rn base station mrf5s9101nbr1 freescale blf6g10ls-200rn base station mrf5s9150hr3 freescale blf6g10 -160rn base station mrf5s9150hsr3 freescale blf6g10-200rn base station mrf6p24190hr6 freescale blf6g27-10g base station mrf6p24190hr6 freescale blf7g24ls-160p base station mrf6p27160hr5 freescale blf7g27l-150p base station mrf6p27160hr5 freescale blf8g27ls-140 base station mrf6p27160hr6 freescale blf7g27l-90p base station mrf6p27160hr6 freescale blf8g27ls-140g base station mrf6s18060nr1 freescale blf6g20 -110 base station mrf6s18060nr1 freescale blf6g20 -180pn base station mrf6s20010gnr1 freescale blf6g22ls-75 base station mrf6s20010nr1 freescale blf6g22s-45 base station mrf6s21050lr3 freescale blf7g22l-130 base station mrf6s21050lsr3 freescale blf7g22l-160 base station mrf6s21100hr3 freescale blf7g22ls-130 base station mrf6s21140hr3 freescale blf7g22ls-160 base station mrf6s21190hsr3 freescale blf8g22ls-200gv base station mrf6s24140hr3 freescale blf7g24l-10 0 base station mrf6s24140hr3 freescale blf7g27l-75p base station mrf6s24140hsr3 freescale blf7g24l-140 base station mrf6s24140hsr3 freescale blf7g27ls-75p base station mrf6s27015gnr1 freescale blf7g22ls-250p base station mrf6s27015nr1 freescale blf6g27-10 base station mrf6s27085hr3 freescale blf7g27ls-100 base station mrf6s27085hr3 freescale blf8g27ls-200gv base station mrf6s27085hr5 freescale blf8g27ls-200pgv base station mrf6s27085hsr3 freescale blf8g27ls-280pgv base station mrf6s27085hsr5 freescale blf7g27l-135 base station mrf6v10010nr4 freescale bl a1011-20 0 r a&d mrf6v12250hr3 freescale bl a0912-250 a&d mrf6v12250hr5 freescale bl a0912-250r a&d mrf6v12250hsr3 freescale bla6h0912-500 a&d mrf6v12500hr5 freescale bla1011-10 a&d mrf6v12500hsr3 freescale bl a1011-2 a&d mrf6v12500hsr5 freescale bl a1011-20 0 a&d mrf6v13250hr3 freescale blf6g15l-500h base station mrf6v13250hr3 freescale blf6g15ls-250pbrn base station mrf6v13250hr3 freescale bll6g1214ls-250 a&d mrf6v13250hr3 freescale bll6h1214ls-500 a&d mrf6v13250hr5 freescale blf6g15ls-500h base station mrf6v13250hr5 freescale blf6g15ls-40rn base station mrf6v13250hr5 freescale bll6h1214-500 a&d mrf6v13250hsr3 freescale blf6g13l-250p base station mrf6v13250hsr3 freescale blf7g20l-90p base station mrf6v13250hsr3 freescale bll6h1214l-250 a&d mrf6v13250hsr5 freescale blf6g13ls-250p base station mrf6v13250hsr5 freescale blf7g20ls-90p base station mrf6v13250hsr5 freescale bll6h1214ls-250 a&d mrf6v14300hr3 freescale bll1214-250 a&d mrf6v14300hr5 freescale bll1214-250r a&d mrf6v14300hsr3 freescale blf7g15ls-200 base station mrf6v14300hsr3 freescale bll1214-35 a&d mrf6v14300hsr5 freescale blf7g15ls-300p base station mrf6v14300hsr5 freescale bll6g1214l-250 a&d mrf6v2010nbr1 freescale blf573s broadcast
114 nxp semiconductors rf manual 16 th edition manufacturer type manufacturer nxp type product family mrf6v2010nbr5 freescale blf574 broadcast mrf6v2010nr1 freescale blf574xr broadcast mrf6v2150nbr1 freescale blf574xrs broadcast mrf6v2150nbr5 freescale blf578 broadcast mrf6v2150nr1 freescale blf578xr broadcast mrf6v3090nbr1 freescale blf647ps broadcast mrf6v3090nbr5 freescale blf202 broadcast mrf6v3090nr1 freescale blf242 broadcast mrf6v3090nr5 freescale blf244 broadcast mrf6vp11khr5 freescale blf145 broadcast mrf6vp11khr6 freescale blf147 broadcast mrf6vp21khr5 freescale blf175 broadcast mrf6vp21khr6 freescale blf177 broadcast mrf6vp2600hr5 freescale blf647p broadcast mrf6vp3091nbr1 freescale blf245 broadcast mrf6vp3091nbr5 freescale blf245b broadcast mrf6vp3091nr1 freescale blf246 broadcast mrf6vp3091nr5 freescale blf878 broadcast mrf6vp3450hr5 freescale blf879p broadcast mrf6vp3450hr6 freescale blf884p broadcast mrf6vp3450hsr5 freescale blf884ps broadcast mrf6vp3450hsr6 freescale blf888 broadcast mrf6vp41khr5 freescale blf248 broadcast mrf6vp41khr6 freescale blf369 broadcast mrf6vp41khr7 freescale blf571 broadcast mrf6vp41khsr5 freescale blf572xr broadcast mrf6vp41khsr6 freescale blf572xrs broadcast mrf6vp41khsr7 freescale blf573 broadcast mrf7p20040hr3 freescale blf6g22-180pn base station mrf7p20040hsr3 freescale blf6g22-180rn base station mrf7s15100hr3 freescale blf6g15l-250pbrn base station mrf7s15100hsr3 freescale blf6g15l-40brn base station mrf7s15100hsr5 freescale blf6g15l-40rn base station mrf7s18170hsr3 freescale blf6g20-40 base station mrf7s21080hsr3 freescale blf8g22ls-270gv base station mrf7s21110 hr3 freescale blf8g22ls-400pgv base station mrf7s21110 hsr3 freescale blm7g22s-60pb base station mrf7s27130hr3 freescale blf6g27-45 base station mrf7s27130hsr3 freescale blf6g27-75 base station mrf7s35015hsr3 freescale bls6g3135s-20 a&d mrf7s35120hsr3 freescale bls7g3135l-350p a&d mrf7s38075hr3 freescale blf6g38-10 base station mrf8p18265hr5 freescale blf6g20-45 base station mrf8p18265hr6 freescale blf6g20-75 base station mrf8p18265hsr5 freescale blf6g20 l s -110 base station mrf8p18265hsr6 freescale blf6g20ls-140 base station mrf8p20160hr3 freescale blf8g20ls-270gv base station mrf8p20160hr5 freescale blf8g20ls-270pgv base station mrf8p20160hsr3 freescale blf7g20l-200 base station mrf8p20160hsr5 freescale blf7g20l-250p base station mrf8p20161hsr3 freescale blf8g20l-200v base station mrf8p20161hsr5 freescale blf8g20ls-200v base station mrf8p23080hr3 freescale blm7g22s-60pbg base station mrf8p23080hr5 freescale bld6g21l-50 base station mrf8p23080hsr3 freescale bld6g21ls-50 base station mrf8p23080hsr5 freescale blm6g22-30 base station mrf8p23160whr3 freescale blm6g22-30g base station mrf8p23160whr5 freescale bld6g22l-50 base station mrf8p23160whsr3 freescale bld6g22ls-50 base station mrf8p23160whsr5 freescale blf6g22l-40p base station mrf8p26080hr3 freescale blf6g27l-40p base station mrf8p26080hr5 freescale blf6g27l-50bn base station mrf8p26080hsr3 freescale blf6g27ls-100 base station mrf8p26080hsr5 freescale blf6g27ls-135 base station mrf8p29300hr5 freescale blf7g27ls-140 base station mrf8p29300hr5 freescale bls6g2731-120 a&d mrf8p29300hr6 freescale blf7g27ls-150p base station mrf8p29300hr6 freescale bls6g2731-6g a&d mrf8p29300hsr5 freescale blf7g27ls-90p base station mrf8p29300hsr5 freescale bls6g2731s-120 a&d mrf8p29300hsr6 freescale blf7g27ls-90pg base station mrf8p29300hsr6 freescale bls6g2731s-130 a&d mrf8p8300hr5 freescale blf6g10ls-160rn base station mrf8p8300hr6 freescale blf6g10ls-260prn base station mrf8p8300hsr5 freescale blf6g10s-45 base station mrf8p8300hsr6 freescale blf6h10l-160 base station mrf8p9040gnr1 freescale blf6g10-45 base station manufacturer type manufacturer nxp type product family mrf8p9040nbr1 freescale blf6g10l-260pbm base station mrf8p9040nr1 freescale blf6g10l-260prn base station mrf8s18120hr3 freescale blf6g20ls-180rn base station mrf8s18120hr5 freescale blf6g20ls-75 base station mrf8s18120hsr3 freescale blf6g20s-230prn base station mrf8s18120hsr5 freescale blf6g20s-45 base station mrf8s18260hr5 freescale blf7g20ls-140p base station mrf8s18260hr6 freescale blf7g20ls-260a base station mrf8s18260hsr5 freescale blf7g21l-160p base station mrf8s18260hsr6 freescale blf7g21ls-160 base station mrf8s23120hr3 freescale blf6g22ls-40p base station mrf8s23120hr5 freescale blf7g22l-200 base station mrf8s23120hsr3 freescale blf7g22l-250p base station mrf8s23120hsr5 freescale blf7g22ls-200 base station mrf8s26060hr3 freescale blf7g27l-200pb base station mrf8s26060hsr5 freescale blf8g27ls-140v base station mrf8s8260hr3 freescale blf8g10l-160v base station mrf8s8260hr5 freescale blf8g10ls-160v base station mrf8s8260hsr3 freescale blf8g10ls-200gv base station mrf8s8260hsr5 freescale blf8g10ls-270gv base station mrf917 freescale bfq67w wb trs 1-4 mrf927 freescale bfs25a wb trs 1-4 mrf9411l freescale bfg520/x wb trs 1-4 mrf947 freescale bfs520 wb trs 1-4 mrf947a freescale prf947 wb trs 1-4 mrf9511l freescale bfg540/x wb trs 1-4 mrf957 freescale prf957 wb trs 1-4 mrfe6p3300hr3 freescale blf888a broadcast mrfe6p3300hr5 freescale blf578xrs broadcast mrfe6p9220hr3 freescale blf7g10ls-250 base station mrfe6s8046gnr1 freescale blf8g10ls-300p base station mrfe6s8046nr1 freescale blf7g10l-250 base station mrfe6s9125nbr1 freescale blf6h10ls-160 base station mrfe6s9125nr1 freescale blf8g10l-160 base station mrfe6s9160hsr3 freescale blm6g10-30 base station mrfe6s9205hsr3 freescale blm6g10-30g base station mrfe6vp8600hr5 freescale blf888as broadcast mrfe6vp8600hr6 freescale blf888b broadcast mrfe6vp8600hsr5 freescale blf888bs broadcast mrfg35003ant1 freescale blu6h0410l-600p a&d ms1078 microsemi blf145 broadcast ms1281 microsemi blf177 broadcast ms1336 microsemi blf175 broadcast ms1337 microsemi blf147 broadcast ms1504 microsemi blf248 broadcast ms1505 microsemi blf178xrs broadcast ms1506 microsemi blf178xr broadcast ms2267 microsemi bla1011-10 a&d ms2272 microsemi bla6h0912-500 a&d mt4s20 0t toshiba bfg424w wb trs 5-7 mt4s20 0u toshiba bfg425w wb trs 5-7 mt4s34u toshiba bfg410w wb trs 5-7 mv2109g onsemicond. bb182lx varicap mw6s004nt1 freescale blf6g21-10g base station mw6s004nt1 freescale blf1043 broadcast mw7ic008nt1 freescale blf988 broadcast mw7ic2020nt1 freescale blf7g21ls-160p base station mw7ic2425gnr1 freescale blf7g24l-160p base station mw7ic2425gnr1 freescale blf8g24l-200p base station mw7ic2425nbr1 freescale blf7g24ls-10 0 base station mw7ic2425nbr1 freescale blf8g24ls-200p base station mw7ic2425nr1 freescale blf7g24ls-140 base station mw7ic2425nr1 freescale bls7g2325l-105 base station mw7ic2725gnr1 freescale blf6g27ls-40p base station mw7ic2725nbr1 freescale blf6g27ls-50bn base station mw7ic2725nr1 freescale blf6g27ls-75 base station mw7ic2750gnr1 freescale blf6g27s-45 base station mw7ic2750nbr1 freescale blf7g27l-100 base station mw7ic2750nr1 freescale blf7g27l-140 base station mw7ic3825gnr1 freescale blf6g38-10 0 base station mw7ic3825nbr1 freescale blf6g38-10g base station mw7ic3825nr1 freescale blf6g38-25 base station mw7ic915nt1 freescale blf6g10l-40brn base station mwe6ic9100nbr1 freescale blf8g10ls-160 base station nesg2021m05 renesas electronics bfu610f wb trs 5-7 nesg2031m05 renesas electronics bfu630f wb trs 5-7 nesg2101m05 renesas electronics bfu660f wb trs 5-7
115 nxp semiconductors rf manual 16 th edition cross-references & replacements manufacturer type manufacturer nxp type product family nesg2101m05 renesas electronics bfu760f wb trs 5-7 nesg2101m05 renesas electronics bfu790f wb trs 5-7 nesg3031m05 renesas electronics bfu730f wb trs 5-7 nesg3032m14 renesas electronics bfu725f wb trs 5-7 njg114 0 k a1 jrc bgu7044 mmic prf947b motorola prf947 wb trs 1-4 prf947b infineon prf947 wb trs 1-4 ptf 080101s - 10 w infineon blf8g10l-300p base station ptf 081301e infineon blf8g10ls-300p base station ptf 081301f infineon blf7g10l-250 base station ptf 140451e infineon blf1046 broadcast ptf 140451f infineon blf145 broadcast ptf 141501e - 150 w infineon blf147 broadcast ptfa 041501e infineon blf6g10ls-200rn base station ptfa 041501f infineon blf6g10 -135rn base station ptfa 043002e - 300 w infineon blf6g21-10g base station ptfa 043002e - 300 w infineon blf1043 broadcast ptfa 070601e - 60 w infineon blf6g10l-260prn base station ptfa 070601f - 60 w infineon blf6g10l-40brn base station ptfa 071701e - 170 w infineon blf6g10ls-135rn base station ptfa 071701f - 170 w infineon blf6g10ls-160rn base station ptfa 072401el - 240 w infineon blf6g10ls-260prn base station ptfa 072401fl - 240 w infineon blf6g10s-45 base station ptfa 072401fl - 240 w infineon blf6h10l-160 base station ptfa 080551e - 55 w infineon blf6h10ls-160 base station ptfa 080551f - 55 w infineon blf8g10l-160 base station ptfa 081501e - 150 w infineon blf8g10l-160v base station ptfa 081501f - 150 w infineon blf8g10ls-160v base station ptfa 082201e - 220 w infineon blf8g10ls-200gv base station ptfa 082201f - 220 w infineon blf8g10ls-270gv base station ptfa 091201e - 120 w infineon blm6g10-30 base station ptfa 091201f - 120 w infineon blm6g10-30g base station ptfa 142401el - 240 w infineon blf175 broadcast ptfa 142401fl - 240 w infineon blf177 broadcast ptfa 210601e - 60 w infineon blf6g20-40 base station ptfa 210601f - 60 w infineon blf6g20-45 base station ptfa 210701e - 70 w infineon blf6g20-75 base station ptfa 210701f - 70 w infineon blf6g20 l s -110 base station ptfa 211801e - 180 w infineon blf6g20ls-140 base station ptfa 211801f - 180 w infineon blf6g20ls-180rn base station ptfa 212001e - 200 w infineon blf6g20ls-75 base station ptfa 212001f - 200 w infineon blf6g20s-230prn base station ptfa 240451e - 45 w infineon blf6g27-75 base station ptfa 241301e - 130 w infineon blf6g27l-40p base station ptfa 241301f - 130 w infineon blf6g27l-50bn base station ptfa 260451e - 45 w infineon blf6g27ls-100 base station ptfa 261301e - 130 w infineon blf6g27ls-135 base station ptfa 261301f - 130 w infineon blf6g27ls-40p base station ptfb 082817 fh - 250 w infineon blf6g10l-260pbm base station ptfb 082817 fh - 250 w infineon blf8g10ls-400pgv base station ptfb 091507fh - 150 w infineon blf7g10ls-250 base station ptfb 093608fv - 360 w infineon blf8g10ls-160 base station ptfb 210801fa - 80 w infineon blf6g20s-45 base station ptfb 211501e - 150 w infineon blf7g20ls-140p base station ptfb 211501f - 150 w infineon blf7g20ls-260a base station ptfb 211503el - 150 w infineon blf7g21l-160p base station ptfb 211503fl - 150 w infineon blf7g21ls-160 base station ptfb 211803el - 180 w infineon blf7g21ls-160p base station ptfb 211803fl - 180 w infineon blf8g20l-200v base station ptfb 212503el - 240 w infineon blf8g20ls-200v base station ptfb 212503fl - 240 w infineon blf8g20ls-270gv base station ptfb 213004f - 300 w infineon blf8g20ls-270pgv base station ptfb 241402f - 2x70w infineon blf7g24l-140 base station ptfb 241402f - 2x70w infineon blf6g27-45 base station ptma 080152m - 20 w infineon blf6g10 -160rn base station ptma 080302m - 30 w infineon blf6g10-200rn base station ptma 080304m - 2 x 15 w infineon blf6g10-45 base station ptma 180402m - 40 w infineon blf6g20 -110 base station ptma 210152m - 20 w infineon blf6g20 -180pn base station ptma 210452el - 45 w infineon blf6g20 -180rn base station ptma 210452fl - 45 w infineon blf6g20-230prn base station r0605250l rfmd bgs67a catv ra r0605250l standard bgy66b catv ra r0605300l standard bgy68 catv ra r0605300l rfmd bgy68 catv ra r1005250l rfmd bgy66b catv ra r2005200p12 rfmd bgy67 catv ra manufacturer type manufacturer nxp type product family r2005240 standard bgy67a catv ra r2005240 rfmd bgy67a catv ra r2005240p12 rfmd bgy67a catv ra r2005350l rfmd bgr269 catv ra rf3826 rfmd blf7g24l-10 0 base station rf3863 rfmd bgu7051 mmic rf3863 rfmd bgu7052 mmic rf3863 rfmd bgu7053 mmic rf3928 rfmd bls7g2933s-150 a&d rf3928b rfmd bls6g2933s-130 a&d rf3931 rfmd blf6g38-10 base station rf3931 rfmd bls6g3135-120 a&d rf3932 rfmd blf6g38-10 0 base station rf3933 rfmd blf6g38-10g base station rf3934 rfmd blf6g38-25 base station rffc2072 rfmd bgx721x mmic rfg1m09090 rfmd blf6g10-200rn base station rfg1m09180 rfmd blf6g10-45 base station rfg1m20090 rfmd blf6g20 -110 base station rfg1m20180 rfmd blf6g20 -180pn base station rfha1000 rfmd blf6g10 -135rn base station rfha10 03 rfmd blf6g10ls-200rn base station rfha10 06 rfmd blf6g10 -160rn base station rfha3942 rfmd bls7g3135ls-350p a&d rn142g rohm bap1321-03 pin diode rn142s rohm bap1321-02 pin diode rn242cs rohm bap51lx pin diode rn731v rohm bap50-03 pin diode rn739d rohm bap50-04 pin diode rn739f rohm bap50-04w pin diode s10040200p rfmd cgy1041 catv pp s10040220gt rfmd cgy1041 catv pp s10040220p rfmd cgy1041 catv pp s10040230gt rfmd cgy1043 catv pp s10040240p rfmd cgy1043 catv pp s10040280gt rfmd cgy1047 catv pp s10040340 rfmd cgy1034 catv pp s595t vishay bf1105 fet s595tr vishay bf1105r fet s595trw vishay bf1105wr fet s7540185 standard bgy785a catv ppa s7540215 standard bgy787 catv ppa s8740180gt rfmd bgy885a catv pp s8740190 standard bgd812 catv pd s8740190 rfmd bgy885a catv pp s874020 0p rfmd bgy887 catv pp s8740220 standard bgd814 catv pd s8740220gt rfmd bgy887 catv pp s8740220p rfmd bgy887 catv pp s8740230 standard bgd816l catv pd s8740240gt rfmd bgy887 catv pp s8740240p rfmd bgy887 catv pp s8740240p12 rfmd bgy887 catv pp s8740260gt rfmd cgy887a catv pp s8740280gt rfmd cgy887b catv pp s8740340 rfmd cgy888c catv pp s8740340pt rfmd cgy888c catv pp sd1013 microsemi blf178p broadcast sd1013-03 microsemi blf174xrs broadcast sd1014-06 microsemi blf174xr broadcast sd1526-01 microsemi bl a0912-250r a&d sdv701q auk bb179 varicap sdv704q auk bb178 varicap sdv705q auk bb182 varicap sga8343z sirenza bfg425w wb trs 5-7 sky65048 skyworks bgu7051 mmic sky65066 skyworks bgu7053 mmic sky65084 skyworks bgu7052 mmic sma3101 sanyo bga2851 mmic sma3101 sanyo bga2851 mmic sma3103 sanyo bga2867 mmic sma3103 sanyo bga2867 mmic sma3107 sanyo bga2803 mmic sma3107 sanyo bga2803 mmic sma3109 sanyo bga2817 mmic sma3109 sanyo bga2817 mmic sma3111 sanyo bga2851 mmic
116 nxp semiconductors rf manual 16 th edition manufacturer type manufacturer nxp type product family sma3111 sanyo bga2851 mmic sma3113 sanyo bga2869 mmic sma3113 sanyo bga2869 mmic sma3117 sanyo bga2869 mmic sma3117 sanyo bga2869 mmic smp1302-0 04 skyworks bap50-05 pin diode smp1302-0 05 skyworks bap50-04 pin diode smp13 02- 011 skyworks bap50-03 pin diode smp1302- 074 skyworks bap50-05w pin diode smp1302-075 skyworks bap50-04w pin diode smp1302-079 skyworks bap50-02 pin diode smp1304-001 skyworks bap70-03 pin diode smp1304-011 skyworks bap70-03 pin diode smp1307-0 01 skyworks bap70-03 pin diode smp1307-011 skyworks bap70-03 pin diode smp1320-0 04 skyworks bap65-05 pin diode smp1320 - 011 skyworks bap65-03 pin diode smp1320 - 074 skyworks bap65-05w pin diode smp1321-001 skyworks bap1321-03 pin diode smp1321-005 skyworks bap1321-04 pin diode smp1321-011 skyworks bap1321-03 pin diode smp1321-075 skyworks bap1321-04 pin diode smp1321-079 skyworks bap1321-02 pin diode smp1322-0 04 skyworks bap65-05 pin diode smp1322- 011 skyworks bap65-03 pin diode smp1322- 074 skyworks bap65-05w pin diode smp1322-079 skyworks bap65-02 pin diode smp13 4 0 - 011 skyworks bap63-03 pin diode smp1340-079 skyworks bap63-02 pin diode smp1352- 011 skyworks bap64-03 pin diode smp1352-079 skyworks bap64-02 pin diode smv1235-004 skyworks bb181 varicap smv1236-004 skyworks bb156 varicap sst111 standard pmbfj111 fet sst112 standard pmbfj112 fet sst113 standard pmbfj113 fet sst174 standard pmbfj174 fet sst175 standard pmbfj175 fet sst176 standard pmbfj176 fet sst177 standard pmbfj177 fet sst201 standard bf t4 6 fet sst202 standard bfr31 fet sst203 standard bfr30 fet sst308 standard pmbfj308 fet sst309 standard pmbfj309 fet sst310 standard pmbfj310 fet sst4391 standard pmbf4391 fet sst4392 standard pmbf4392 fet sst4393 standard pmbf4393 fet sst4856 standard bsr56 fet sst4857 standard bsr57 fet sst4859 standard bsr56 fet sst4860 standard bsr57 fet sst4861 standard bsr58 fet svc201spa sanyo bb187 varicap sxa-389b rfmd bga7024 mmic sxa-389b rfmd bga7124 mmic sxa-389b rfmd bga7124 mmic sxa-389b rfmd bga7204 mmic sxb-4089 rfmd bga7027 mmic sxb-4089 rfmd bga7127 mmic t1g4005528-fs triquint blf6g38-25 base station t1g4005528-fs triquint bls6g3135-120 a&d t1g4005528-fs triquint bls6g3135-20 a&d t1l2003028-sp triquint bll6h0514l-130 a&d t1p2701012-sp triquint bls6g2731-120 a&d tan150 microsemi bls7g2325l-105 a&d tan250a microsemi bll6h1214ls-500 a&d tan30 0 microsemi bll6h1214ls-250 a&d tan350 microsemi bll6h1214l-250 a&d tan75a microsemi bll6h1214-500 a&d tbb1016 renesas electronics bf1204 fet tmf3201j auk bf1204 fet tmf3202z auk bf1202wr fet tmpf4091 standard pmbf4391 fet tmpf4092 standard pmbf4392 fet tmpf4093 standard pmbf4393 fet manufacturer type manufacturer nxp type product family tmpf4391 standard pmbf4391 fet tmpf4392 standard pmbf4392 fet tmpf4393 standard pmbf4393 fet tmpfb246a standard bsr56 fet tmpfb246b standard bsr57 fet tmpfb246c standard bsr58 fet tmpfj111 standard pmbfj111 fet tmpfj112 standard pmbfj112 fet tmpfj113 standard pmbfj113 fet tmpfj174 standard pmbfj174 fet tmpfj175 standard pmbfj175 fet tmpfj176 standard pmbfj176 fet tmpfj177 standard pmbfj177 fet tpr400 microsemi bl a1011-2 a&d tpr400 microsemi bl a1011-20 0 a&d tpr400a microsemi bla6g1011-200r a&d tpr500 microsemi bll1214-250 a&d tpr500a microsemi bl a6h1011- 6 0 0 a&d tpr700 microsemi bla6g1011ls-200rg a&d trf370315 ti bgx710x mmic trf370417 ti bgx710x mmic trf3705 ti bgx710x mmic tsdf54040 vishay bf1102 fet tsdf54040-gs08 vishay bf1102 fet tsdf54040x-gs08 vishay bf1102 fet tsdf54040xr-gs08 vishay bf1102r fet upc2709 renesas electronics bga2709 mmic upc2711 renesas electronics bga 2711 mmic upc2712 renesas electronics bga2712 mmic upc2745 renesas electronics bga2001 mmic upc2746 renesas electronics bga2001 mmic upc2748 renesas electronics bga2748 mmic upc2771 renesas electronics bga2771 mmic upc3224 renesas electronics bga2851 mmic upc3224 renesas electronics bga2851 mmic upc3226 renesas electronics bga2867 mmic upc3226 renesas electronics bga2867 mmic upc3227 renesas electronics bga2851 mmic upc3227 renesas electronics bga2851 mmic upc3232 renesas electronics bga2869 mmic upc3232 renesas electronics bga2869 mmic upc3240 renesas electronics bga2802 mmic upc3240 renesas electronics bga2802 mmic upc3241 renesas electronics bga2817 mmic upc3241 renesas electronics bga2817 mmic upc 8112 renesas electronics bga2022 mmic upc8230tu renesas electronics bgu7007 mmic upc8236t6n renesas electronics bgu8007 mmic upd5740t6n renesas electronics bgu7045 mmic upd5756t6n renesas electronics bgu7045 mmic utv005 microsemi blf888b broadcast utv005p microsemi blf888as broadcast utv010 microsemi blf888a broadcast utv020 microsemi blf888 broadcast utv040 microsemi blf884ps broadcast utv080 microsemi blf884p broadcast ut v120 microsemi blf879p broadcast utv200 microsemi blf878 broadcast utv8100b microsemi blf861a broadcast
117 nxp semiconductors rf manual 16 th edition cross-references & replacements nxp discontinued type product family nxp replacement type nxp ba277-01 bs diode ba277 ba278 bs diode ba277 ba792 bs diode ba591 bap142l pin diode bap142lx bap51-01 pin diode bap51l x bap51l pin diode bap51l x bap55l pin diode bap55lx bb132 varicap bb152 bb145 varicap bb145b bb145b-01 varicap bb145b bb151 varicap bb135 bb157 varicap bb187 bb178l varicap bb178l x bb179bl varicap bb179blx bb179l varicap bb179l x bb181lx varicap bb181 bb182b varicap bb182 bb182lx varicap bb182 bb187l varicap bb187lx bb190 varicap bb149 bb202lx varicap bb202 bb804 varicap bb207 bby42 varicap bby40 bf1101 fet bf1211 bf1101r fet bf1211r bf1101wr fet bf1211wr bf1203 fet bf1203 bf1205 fet bf1210 bf1205c fet bf1210 bf1206f fet bf1208 bf245a fet bf545a bf245b fet bf545b bf245c fet bf545c bf689k wb trs bfs17 bf763 wb trs bfs17 bf851a fet bf861a bf851c fet bf861c bf992/01 fet bf992 bfc505 wb trs bfm505 bfc520 wb trs bfm520 bfet505 wb trs bfm505 bfet520 wb trs bfm520 bfg17a wb trs bfs17a bfg197 wb trs bfg198 bfg197/ x wb trs bfg198 bfg25aw/xr wb trs bfg25aw/x bfg410w/ca wb trs bfg410w bfg425w/ca wb trs bfg425w bfg505/xr wb trs bfg505/x bfg505w/xr wb trs bfg505 bfg520w/xr wb trs bfg520w/x bfg590/xr wb trs bfg590/x bfg590w wb trs bfg590 bfg590w/xr wb trs bfg590 bfg67/ xr wb trs bfg67 bfg92a wb trs bfg92a/x nxp discontinued type product family nxp replacement type nxp bfg92a/xr wb trs bfg92a/x bfg93a/xr wb trs bfg93a/x bfq34/01 wb trs bfg35 bfr92 wb trs bfr92a bfr92ar wb trs bfr92a bfr92at wb trs bfr92aw bfr93 wb trs bfr92a bfr93at wb trs bfr93aw bfr93r wb trs bfr93a bfu510 wb trs bfu725f/n1 bfu540 wb trs bfu725f/n1 bfu725f wb trs bfu725f/n1 bga2031 wb trs bga2031/1 bgd502 cat v bgd712 bgd602d cat v bgd712 bgd702 cat v bgd712 bgd702d cat v bgd712 bgd702d/08 cat v bgd712 bgd702n cat v bgd712 bgd704 cat v bgd714 bgd704n cat v bgd714 bgd802 cat v bgd812 bgd802n cat v bgd812 bgd802n/07 cat v bgd812 bgd804 cat v bgd814 bgd804n cat v bgd814 bgd804n/02 cat v bgd814 bgd902 cat v bgd812 bgd902l cat v bgd812 bgd904 cat v bgd814 bgd904l cat v bgd814 bgd906 cat v cgd942c bge788 cat v bge788c bge847bo/fc cat v bgo827/sc0 bge847bo/fc0 cat v bgo827/sc0 bge847bo/fc1 cat v bgo827/sc0 bge847bo/sc cat v bgo827/sc0 bge847bo/sc0 cat v bgo827/sc0 bge887bo/fc cat v bgo827/sc0 bge887bo/fc1 cat v bgo827/sc0 bge887bo/sc cat v bgo827/sc0 bgo807c cat v bgo807c/fco bgo807ce cat v bgo807ce/sco bgo827 cat v bgo807ce/fco bgo827/sco cat v bgo807ce/sco bgo8 47/fc0 cat v bgo827/sc0 bgo8 47/fc01 cat v bgo827/sc0 bgo847/sc0 cat v bgo827/sc0 bgq34/01 wb trs bfg35 bgu2003 wb trs bga2003 bgx885/02 cat v bgx885n bgy1085a/07 cat v bgy1085a bgy585a cat v bgy785a bgy587 cat v bgy787 bgy587b cat v bge787b bgy588n cat v bgy588c 5.2 cross-references: nxp discontinued types versus nxp replacement types in alphabetical order of manufacturer discontinued type abbreviations: bs diode band switch diode cat v community antenna television system fet field effect transistor varicap varicap diode wb trs wideband transistor rfp trs rf power transistor
118 nxp semiconductors rf manual 16 th edition nxp discontinued type product family nxp replacement type nxp bgy66b/04 cat v bgy66b bgy67/0 4 cat v bgy67 bgy67/0 9 cat v bgy67 bgy67/14 cat v bgy67 bgy67/19 cat v bgy67 bgy67a /0 4 cat v bgy67a bgy67a /14 cat v bgy67a bgy68/01 cat v bgy68 bgy685a cat v bgy785a bgy685ad cat v bgy785a bgy685al cat v bgy785a bgy687 cat v bgy787 bgy687b cat v bge787b bgy687b/02 cat v bge787b bgy785a/07 cat v bgy785a bgy785a/09 cat v bgy785a bgy785ad cat v bgy785a bgy785ad/06 cat v bgy785a bgy785ad/8m cat v bgy885a bgy 787/02 cat v bgy787 bgy787/07 cat v bgy787 bgy 787/0 9 cat v bgy787 bgy847bo/sc cat v bgo827/sc0 bgy883 cat v bgy885a bgy887/02 cat v bgy887 bgy887bo/sc cat v bgo827/sc0 blc6g22-10 0 rfp trs blf6g22-10 0 blc6g22-10 0 rfp trs blf6g22ls-10 0 blf1822-10 rfp trs blf6g21-10g blf2043 rfp trs blf6g21-10g blf2045 rfp trs blf6g20-45blf6g22-45 blf3g22-30 rfp trs blf6g22-45 blf4g08ls-160a rfp trs blf6g10ls-160rn blf4g08ls-160a rfp trs blf6g10ls-160rn blf6g10 -135rn rfp trs blf6g10ls-135rn blf6g10 -160rn rfp trs blf6g10ls-160rn blf6g10-160rnl rfp trs blf6g10 -20 0rn blf6g20 -180rn rfp trs blf7g20ls-200 blf6g20-40 rfp trs blf6g20-45 blf6g20s-230prn rfp trs blf7g20ls-250p blf6g22-180rn rfp trs blf7g22ls-200 nxp discontinued type product family nxp replacement type nxp blf6g22ls-180pn rfp trs blf7g22ls-200 blf6g22ls-75 rfp trs blf7g22ls-10 0 blf6g27-10 rfp trs blf6g27-10g blf6g27-10 rfp trs blf6g27-10g blf6g27-135 rfp trs blf7g27l-135 blf6g27ls-135 rfp trs blf7g27ls-140 blf6g27ls-135 rfp trs blf7g27ls-140 blf6g27ls-75s rfp trs blf6g27ls-75 blf6g27ls-75s rfp trs blf6g27ls-75 blf6g38-10 rfp trs blf6g38-10g blf6g38-10 rfp trs blf6g38-10g bls2731-110 rfp trs bls6g2731-120 bls2731-110t rfp trs bls6g2731-120 bls2731-20 rfp trs bls6g2731-6g bls2731-50 rfp trs bls6g2731-6g cgd1042 cat v cgd1042h cgd1044 cat v cgd1044h cgd914 cat v cgd1042h cgy8 87a cat v cgy1043 cgy887b cat v cgy1047 gd923 cat v cgd942c j108 fet pmbfj108 j109 fet pmbfj109 j110 fet pmbfj110 j111 fet pmbfj111 j112 fet pmbfj112 j113 fet pmbfj113 j174 fet pmbfj174 j175 fet pmbfj175 j176 fet pmbfj176 j177 fet pmbfj177 om7650 cat v bgy588c om7670 cat v bge788c on4831-2 cat v bgy885a on4876 cat v bgy1085a on4890 cat v bgd712 on4990 cat v bgd885 pmbt3640/at wb trs bfs17 pn4392 fet pmbf4392 pn4393 fet pmbf4393 tff1004hn satellite ic tff1014hn
119 nxp semiconductors rf manual 16 th edition packing and packaging information 6.1 packing quantities per package with relevant ordering code 6. packing and packaging information package package dimensions l x w x h (mm) packing quantity product 12nc ending packing method sod323/sc-76 1.7 x 1.25 x 0.9 3,000 115 8 mm tape and reel 10,000 135 8 mm tape and reel sod523/sc-79 1.2 x 0.8 x 0.6 3,000 115 8 mm tape and reel 10,000 135 8 mm tape and reel 8,000 315 2 mm pitch tape and reel 20,000 335 2 mm pitch tape and reel sod882d 1.0 x 0.6 x 0.4 10,000 315 reel sot23 2.9 x 1.3 x 0.9 3,000 215 8 mm tape and reel 10,000 235 8 mm tape and reel sot54 4.6 x 3.9 x 5.1 5,000 112 bulk, delta pinning 5,000 412 bulk, straight leads 10,000 116 tape and reel, wide pitch 10,000 126 tape ammopack, wide pitch sot89/sc-62 4.5 x 2.5 x 1.5 1,000 115 12 mm tape and reel 4,000 135 12 mm tape and reel sot115 44.5 x 13.65 x 20.4 100 112 4 tray/box sot143(n/r) 2.9 x 1.3 x 0.9 3,000 215 8 mm tape and reel 10,000 235 8 mm tape and reel sot223/sc-73 6.7 x 3.5 x 1.6 1,000 115 12 mm tape and reel 4,000 135 12 mm tape and reel sot307 10 x 10 x 1.75 1,500 518 13" tape and reel dry pack 96 551 1 tray dry pack 480 557 5 tray dry pack sot323/sc-70 2.0 x 1.25 x 0.9 3,000 115 8 mm tape and reel 10,000 135 8 mm tape and reel sot341 5.3 x 10.2 x 2.0 1,000 118 13" tape and reel 658 112 tube sot343(n/r) 2.0 x 1.25 x 0.9 3,000 115 8 mm tape and reel 10,000 135 8 mm tape and reel sot343f 2.1 x 1.25 x 0.7 3,000 115 8 mm tape and reel sot360 6.5 x 4.4 x 0.9 2,500 118 16 mm tape and reel sot363/sc-88 2.0 x 1.25 x 0.9 3,000 115 8 mm tape and reel 10,000 135 8 mm tape and reel sot401 5 x 5 x 1.4 2,000 118 13" tape and reel 360 151 1 tray sot403 5.0 x 4.4 x 0.9 2,500 118 12 mm tape and reel sot416/sc-75 1.6 x 0.8 x 0.75 3,000 115 8 mm tape and reel sot467b 9.78 x 18.29 x 4.67 60 112 blister, tray 20 112 blister, tray sot467c 20.45 x 18.54 x 4.67 60 112 blister, tray 20 112 blister, tray sot502a 19.8 x 9.4 x 4.1 60 112 blister, tray 300 135 reel
120 nxp semiconductors rf manual 16 th edition package package dimensions l x w x h (mm) packing quantity product 12nc ending packing method sot502b 19.8 x 9.4 x 4.1 60 112 blister, tray 100 118 reel sot538a 5.1 x 4.1 x 2.6 160 112 blister, tray sot539a 31.25 x 9.4 x 4.65 60 112 blister, tray 300 135 reel sot540a 21.85 x 10.2 x 5.4 60 112 blister, tray sot608a 10.1 x 10.1 x 4.2 60 112 blister, tray 60 112 blister, tray 300 135 reel sot608b 10.1 x 10.1 x 4.2 60 112 blister, tray 100 118 reel 300 135 reel sot616 4.0 x 4.0 x 0.85 6,000 118 12 mm tape and reel 1,500 115 8 mm tape and reel 100 551 tray sot617 5 x 5 x 0.85 6,000 118 tape and reel sot618 6 x 6 x 0.85 4,000 118 13" tape and reel 1,000 515 7" tape and reel dry pack 490 551 1 tray dry pack 2,450 157 5 tray sot638 14 x 14 x 1 1,000 518 13" tape and reel dry pack 90 551 1 tray dry pack 450 557 5 tray dry pack sot650 -1 3.0 x 3.0 x 0.85 6,000 118 reel sot666 1.6 x 1.2 x 0.7 4,000 115 8 mm tape and reel sot684 8 x 8 x 0.85 1,000 518 13" tape and reel dry pack 260 151 1 tray 260 551 1 tray dry pack 1,300 157 5 tray dry pack sot724 8.7 x 3.9 x 1.47 2,500 118 16 mm tape and reel sot753 2.9 x 1.5 x 1.0 3,000 125 8 mm tape and reel sot763-1 2.5 x 3.5 x 0.85 3,000 115 reel 6,000 135 sot778 6.0 x 6.0 x 0.85 490 551 tray 4,000 518 multiple trays sot822-1 15.9 x 11 x 3.6 180 127 tube sot834 -1 15.9 x 11 x 3.15 180 127 tube sot883 1.0 x 0.6 x 0.5 3,000 115 8 mm tape and reel sot886 1.45 x 1.0 x 0.5 5,000 115 8 mm tape and reel sot891 1.0 x 1.0 x 0.5 5,000 132 8 mm tape and reel sot908 3.0 x 3.0 x 0.85 6,000 118 12 mm tape and reel sot922-1 17.4 x 9.4 x 3.88 60 112 blister, tray sot975b 6.5 x 6.5 x 3.3 180 112 blister, tray 100 118 tape and reel sot975c 6.5 x 6.5 x 3.3 180 112 blister, tray 100 118 tape and reel sot979a 31.25 x 10.2 x 5.3 60 112 blister, tray sot1110a 41.28 x 17.12 x 5.36 60 112 blister, tray 100 118 reel sot1110b 41.15 x 36.32 x 4.68 60 112 blister, tray sot883
121 nxp semiconductors rf manual 16 th edition packing and packaging information hxson6 sot1112 a 16.65 x 20.32 x 4.205 60 112 blister, tray 100 118 reel sot1112b 16.65 x 15.22 x 4.205 60 112 blister, tray 100 118 reel sot1120a 9.4 x 19.815 x 4.1 60 112 blister, tray 100 118 reel sot1120b 9.4 x 19.815 x 4.1 60 112 blister, tray 100 118 reel sot1121a 34.16 x 19.94 x 4.75 60 112 blister, tray 100 118 reel sot1121b 20.70 x 19.94 x 4.75 60 112 blister,tray 100 118 reel sot1121c 13.4 x 20.575 x 3.785 dev dev dev sot1130a 20.45 x 17.12 x 4.65 60 112 blister, tray sot1130b 9.91 x 17.12 x 4.65 60 112 blister, tray sot1135a 20.45 x 19.94 x 4.65 60 112 blister, tray 100 118 reel sot1135b 16.65 x 9.78 x 4.205 60 112 blister, tray 100 118 reel sot1135c 16.65 x 9.78 x 4.205 60 112 blister, tray 100 118 reel sot1138 19.48 x 20.57 x 3.9 dev dev dev sot1179 4.0 x 6.0 x 0.85 dev dev dev sot1198 -1 10.0 x 5.5 x 0.8 1000 115 reel sot1204 13.2 x 20.57 x 3.9 dev dev dev sot1209 2 x 1.3 x 0.35 5000 147 8 mm tape and reel sot1240b 21.60 x 20.575 x 3.875 dev dev dev sot1240c 18.00 x 20.575 x 3.875 dev dev dev sot1242b 22.60 x 32.45 x 4.455 dev dev dev sot1242c 18.00 x 32.45 x 4.455 dev dev dev sot1244b 19.43 x 20.575 x 3.875 dev dev dev sot1244c 18.00 x 20.575 x 3.875 dev dev dev package package dimensions l x w x h (mm) packing quantity product 12nc ending packing method
122 nxp semiconductors rf manual 16 th edition marking code final product package 10% bat18 sot23 13% bb207 sot23 20% bf545a sot23 21% bf545b sot23 22% bf545c sot23 24% bf556a sot23 25% bf556b sot23 26% bf556c sot23 28% bf861a sot23 29% bf861b sot23 30% bf861c sot23 31% bfr505 sot23 32% bfr520 sot23 33% bfr540 sot23 34% bft25a sot23 35% on4288 sot23 36% on4690 sot23 38% pmbfj108 sot23 39% pmbfj109 sot23 40% pmbfj110 sot23 41% pmbfj111 sot23 42% pmbfj112 sot23 47% pmbfj113 sot23 48% pmbfj308 sot23 49% pmbfj309 sot23 50% pmbfj310 sot23 1 ba277 sod523 2 bb182 sod523 2 bb182/l sod523 4 bb189 sod523 4 bb189/l sod523 7 ba891 sod523 7 ba891/l sod523 8 bb178 sod523 8 bb178/l sod523 9 bb179 sod523 9 bb179/l sod523 %1v bfr93aw/dg sot323 %1w bap51-05w sot323 %6g pmbf4393 sot23 %6j pmbf4391 sot23 %6k pmbf4392 sot23 %6n on5088 sot343 %6s pmbfj176 sot23 %6w pmbfj175 sot23 %6x pmbfj174 sot23 %6y pmbfj177 sot23 %7n on5087 sot343 %8n on5089 sot343 %ab bf1210 sot363 %bg pmbfj177/dg sot23 %e7 bga2800 sot363 %e8 bga2801 sot363 %e9 bga2815 sot363 %ea bga2816 sot363 %eb bga2850 sot363 %ec bga2865 sot363 %ed bga2866 sot363 %m1 bf908 sot143 %m2 bf908r sot143 %m3 bf909 sot143 %m4 bf909r sot143 marking code final product package %m5 bf909a sot143 %m6 bf909ar sot143 %m7 bf904a sot143 %m8 bf904ar sot143 %m9 bss83 sot143 %m9 on4906 sot143 %ma bf991 sot143 %mb bf992 sot143 %mc bf904 sot143 %md bf904r sot143 %me bfg505 sot143 %mf bfg520 sot143 %mg bfg540 sot143 %mh bfg590 sot143 %mk bfg505/x sot143 %ml bfg520/x sot143 %mm bfg540/x sot143 %mm on4832 sot143 %mn bfg590/x sot143 %mp bfg520/xr sot143 %mp on4973 sot143 %mr bfg540/xr sot143 %ms bfg10 sot143 %mt bfg10/x sot143 %mu bfg25a/x sot143 %mv bfg67/ x sot143 %mw bfg92a/x sot143 %mx bfg93a/x sot143 %my bf110 0 sot143 %mz bf110 0 r sot143 %va bgu7041 sot363 %vb bgu7042 sot363 le bap64lx sod882d l4 bb179l x sod882d lc bap55lx sod882d l3 bb178l x sod882d 1a bgu6101 sot1209 1b bgu6102 sot1209 1b% bga2717 sot363 1c bgu6104 sot1209 1c% bap50-05 sot23 1n% bap70-04w sot323 2a% bf862 sot23 2e prf949/dg sot416 2l bf1208 sot666 2n bf1206f sot666 4a bf1208d sot666 4k% bap64-04 sot23 4l% bap50-04 sot23 4w% bap64-04w sot323 5k% bap64-05 sot23 5w% bap64-05w sot323 6f% bap1321-04 sot23 6k% bap64-06 sot23 6w% bap50-04w sot323 7k% bap65-05 sot23 8k% bap70-05 sot23 a1 ba591 sod323 a1 bb208-02 sod523 a1 bga2001 sot343 a1 bap64q sot753? a2 bb208-03 sod323 marking code final product package a2 bb184 sod523 a2 bga2002 sot343 a2 bap70q sot753? a2% bga2022 sot363 a3 bap64-03 sod323 a3 bb198 sod523 a3 bga2003 sot343 a3% bga2031/1 sot363 a5 bap51-03 sod323 a5% bga 2011 sot363 a6% bga2012 sot363 a7% bfg310w/xr sot343 a8 bap50-03 sod323 a8% bfg325w/xr sot343 a8% pmbfj620 sot363 a9 bap70-03 sod323 ac bgu7005 sot886 b3 bgu7003 sot891 b5% bsr12 sot23 b6 bgu7007 sot886 b6% bga2715 sot363 b7 bgu7008 sot886 b7% bf862/b sot23 b7% bfu725f/n1 sot343 b7% bga2716 sot363 ba% bga2714 sot363 bcp bfq591 sot89 c bb179b sod523 c1% bgm1011 sot363 c2% bgm1012 sot363 c4% bgm1013 sot363 c5% bgm1014 sot363 cl bap70-03/dg sod323 d1 bfu610f sot343 d2 bap63-03 sod323 d2 bfu630f sot343 d3 bap65-03 sod323 d3 bfu660f sot343 d4 bfu690f sot343 d5 bfu710f sot343 d6 bfu730f sot343 d7 bfu760f sot343 d8 bfu790f sot343 e1% bfs17 sot23 e1% bfs17/fd sot23 e1% on4438 sot23 e1% BFS17W sot323 e2% bfs17a sot23 e2% on5023 sot23 e2% bga2712 sot363 e3% bga2709 sot363 e6 bap55l sod882 fb bfq19 sot89 ff bfq18a sot89 fg bfq149 sot89 g2 ba278 sod523 g2% bga 2711 sot363 g3% bga2748 sot363 g4% bga2771 sot363 g5% bga2776 sot363 k1 bap51-02 sod523 k2 bap51-05w sod523 6.2 marking codes in general, device marking includes the part number, some manufacturing information and the nxp logo. if packages are too small for the full-length part number a shor ter, coded part number C marking code C is used (where % = placeholder for manufacturing site code). the full-length part number is always printed on the packing label on the box or bulk-pack in which the devices are supplied. p = made in hong kong t = made in malaysia w = made in china
123 nxp semiconductors rf manual 16 th edition packing and packaging information marking code final product package k4 bap50-02 sod523 k5 bap63-02 sod523 k6 bap65-02 sod523 k7 bap1321-02 sod523 k8 bap70-02 sod523 k9 bb199 sod523 l1 bb202lx sod882t l2 bb202 sod523 l2 bap51l x sod882t l2% bf1203 sot363 l3 bb178l x sod882t l3% bf1204 sot363 l4 bb179l x sod882t l4% bf1205 sot363 l5 bb179blx sod882t l6 bb181lx sod882t l6% bf1206 sot363 l7 bb182lx sod882t l8 ba792 sod110 l8 bb187lx sod882t l9% bf1208 sot363 la bf1201wr sot343 la% bf1201 sot143 lb bap50lx sod882t lb% bf1201r sot143 lb% pbr941b sot23 lc bap55lx sod882t ld bap63lx sod882t ld% bf1202 sot143 ld% bf1202/l sot143 le bap64lx sod882t le bf1202wr sot343 le bf1202wr/l sot343 le% bf1202r sot143 lf bap65lx sod882t lf% bf1211 sot143 lg bap142lx sod882t lg% bf1212 sot143 lh bap1321lx sod882t lh% bf1211r sot143 lj% bgu7044 sot363 lk% bf1212r sot143 lk% bgu7045 sot363 lp% bga2867 sot363 lr% bga2874 sot363 ls% bga2817 sot363 m1% bfr30 sot23 m2% bfr31 sot23 m2% bf1207 sot363 m26 bf908 sot143 m27 bf908r sot143 m28 bf909 sot143 m29 bf909r sot143 m3% bf t4 6 sot23 m33 bf909a sot143 m34 bf909ar sot143 m4% bf1215 sot363 m4% bsr56 sot23 m41 bf904a sot143 m42 bf904ar sot143 m5% bsr57 sot23 m5% bf1216 sot363 m56 bf110 0 sot143 m57 bf110 0 r sot143 m6% bsr58 sot23 m6% bf1205c sot363 m7% bf1218 sot363 m74 bss83 sot143 m74 on4906 sot143 m91 bf991 sot143 m92 bf992 sot143 ma% bga2802 sot363 mb bf998wr sot343 mb% bga2803 sot363 mc bf904wr sot343 mc% bga2851 sot363 md bf908wr sot343 me bf909wr sot343 mf bf110 0wr sot343 mg bf909awr sot343 mg% bf994s sot143 marking code final product package mh bf904awr sot343 mh% bf996s sot143 mk bf1211wr sot343 ml bf1212wr sot343 ml bf1212wr/l sot343 mo% bf998 sot143 mo% bf998r sot143 mo4 bf904 sot143 mo6 bf904r sot143 n bb181 sod523 n0 bfr505t sot416 n0% bfs505 sot323 n0% bfm505 sot363 n2 bfr520t sot416 n2% bfs520 sot323 n2% bfm520 sot363 n3 bfg520w sot343 n33 bfg505 sot143 n36 bfg520 sot143 n37 bfg540 sot143 n38 bfg590 sot143 n39 bfg505/x sot143 n4 bfg520w/x sot343 n4 bfq540 sot89 n4% bfs540 sot323 n42 bfg520/x sot143 n43 bfg540/x sot143 n43 on4832 sot143 n44 bfg590/x sot143 n48 bfg520/xr sot143 n49 bfg540/xr sot143 n6% bfs25a sot323 n7 bfg540w/x sot343 n70 bfg10 sot143 n71 bfg10/x sot143 n8 bfg540w/xr sot343 n9 bfg540w sot343 n9% bap70am sot363 na bf1105 wr sot343 na% bf1105r sot143 nb bf110 9wr sot343 nb% bf110 9r sot143 nc bf1101wr sot343 nc% bf1101r sot143 nd bfg424w sot343 nd% bf1101 sot143 ne bfg424f sot343 ne% bf1105 sot143 nf% bf110 9 sot143 ng% bf110 8 sot143 ng% bf110 8/l sot143 nh% bf110 8r sot143 nl% bfr94a sot23 33* bfr540 sot143 p1 bb131 sod323 p1 bfg21w sot343 p2% bfr92a sot23 p2% on4640 sot23 p2% bfr92aw sot323 p3 bfg403w sot343 p3a bga6289 sot89 p4 bfg410w sot343 p4a bga6489 sot89 p5 bb135 sod323 p5 bfg425w sot343 p5a bga6589 sot89 p6 bfg480w sot343 p6k bga7024 sot89 p6l bga7027 sot89 p8 bb148 sod323 p9 bb149 sod323 pb bb152 sod323 pc bb153 sod323 pf bb156 sod323 pl bb149a sod323 r2% bfr93a sot23 r2% bfr93aw sot323 r5% bfr93ar sot23 r7% bfr106 sot23 r8% bfg93a sot143 s bap64-02 sod523 marking code final product package s1% bfg310/xr sot143 s2% bfg325/xr sot143 s2% bby40 sot23 s3% bf1107 sot23 s6% bf510 sot23 s7% bf511 sot23 s8% bf512 sot23 s9% bf513 sot23 sb% bf1214 sot363 sb% bf1214/l sot363 sc% bb201 sot23 sc% bgu7031 sot363 sd% bgu7032 sot363 se% bgu7033 sot363 t5 bfg10w/x sot343 ta% bga2818 sot363 tb% bga2819 sot363 uw bgu7003w sot886 uy bgu7004 sot886 uz bgu8007 sot886 v0% pbr941 sot23 v0% prf947 sot323 v1 bfg25aw/x sot343 v1% bft25 sot23 v11 bfg25a/x sot143 v12 bfg67/ x sot143 v14 bfg92a/x sot143 v15 bfg93a/x sot143 v2% bfq67 sot23 v2% on5042 sot23 v2% bfq67w sot323 v3% bfg67 sot143 v4% bap64-06w sot323 v6% bap65-05w sot323 v8 bap1321-03 sod323 va bf1217wr????????? sot343 vb bf1118w??????? sot343 vc bf1118wr????????? sot343 vc% bf1118?????????? sot143 vd% bf1118r????????? sot143 w1 bf1102 sot363 w1% bft92 sot23 w1% bft92w sot323 w2% pbr951 sot23 w2% prf957 sot323 w2% bf1102r sot363 w4% bap50-05w sot323 w6% bap51-04w sot323 w7% bap51-06w sot323 w9% bap63-05w sot323 x bb187 sod523 x bb187/l sod523 x1% bft93 sot23 x1% bft93w sot323 xg% bfr94aw sot323 yc% bga2870 sot363 z bb145b sod523 za% bfu668f sot343 zc bfu710lx sot883 zd bfu730lx sot883 ze bfu760l x sot883 zf bfu790lx sot883 zk% on5052 sot23 zx% bga2022/c sot363
124 nxp semiconductors rf manual 16 th edition 7. abbreviations 3-way doherty design using 3 discrete transistors am amplitude modulation asic application specific integrated circuit asym asymmetrical design of doherty (main and peak device are different) bpf band pass filter buc block upconverter cat v community antenna television cdma code division multiple access cmmb chinese multimedia mobile broadcasting cmos complementary metal oxide semiconductor cqs customer qualification samples dab digital audio broadcasting dect digital enhanced cordless telecommunications diseqc digital satellite equipment control dsb digital signal processor dvb digital video broadcasting edge enhanced data rates for gsm evolution esd electro static device fet field effect transistor fm frequency modulation gaas gallium arsenide gan gallium nitride gen generation gps global positioning system gsm global system for mobile communications hbt heterojunction bipolar transistor hdtv high definition television hf high frequency (3-30 mhz) hfc hybrid fiber coax hfet heterostructure field effect transistor hpa high power amplifier hvqfn plastic thermally enhanced very thin quad flat pack no leads if intermediate frequency ism industrial, scientific, medical - reserved frequency bands ldmos laterally diffused metal-oxide-semiconductor lna low noise amplifier lnb low noise block lo local oscillator lpf low pass filter mesfet metal semiconductor field effect transistor mmic monolithic microwave integrated circuit mmpp main and peak devices realized separately in halves of push-pull transistor mppm main and peak device realized in same push- pull transistor (2 times) moca multimedia over coax alliance mosfet metalCoxideCsemiconductor field effect transistor mpa medium power amplifier mri magnetic resonance imaging nf noise figure nim network interface module nmr nuclear magnetic resonance pa power amplifier par peak to average ratio pep peak envelope power phemt pseudomorphic high electron mobility transistor pll phase locked loop qubic quality bicmos rf radio frequency rfs release for supply rohs restriction of hazardous substances rx receive sarft state administration for radio, film and television ser serializer sige:c sillicon germanium carbon smat v satellite master antenna television smd surface mounted device spdt single pole, double throw sym symmetrical design of doherty (main and peak device are the same type of transistor) td-scdma time division-synchronous code division multiple access tcas traffic collision avoidance systems tma tower mounted amplifier ttff time to first fix tx transmit uhf ultra high frequency (470-860 mhz) umts universal mobile telecommunications system vco voltage controlled oscillator vga variable gain amplifier vhf very high frequency (30-300 mhz) voip voice over internet protocol vsat very small aperture terminal wcdma wideband code division multiple access wimax worldwide interoperability for microwave access wlan wireless local area network abbreviations
125 nxp semiconductors rf manual 16 th edition contacts and web links 8. contacts and web links authorized distributors asia pacific: http://www.nxp.com/profile/sales/asia_pacific_dist europe / africa / middle east: http://www.nxp.com/profile/sales/europe_dist north america: http://www.nxp.com/profile/sales/northamerica_dist local nxp offices asia pacific: http://www.nxp.com/profile/sales/asia_pacific europe / africa / middle east: http://www.nxp.com/profile/sales/europe north america: http://www.nxp.com/profile/sales/northamerica web links nxp semiconductors: http://www.nxp.com nxp rf manual web page: http://www.nxp.com/rfmanual nxp varicaps: http://www.nxp.com/varicaps nxp rf pin diodes: http://www.nxp.com/pindiodes nxp rf schottky diodes: http://www.nxp.com/rfschottkydiodes nxp rf mmics: http://www.nxp.com/mmics nxp rf wideband transistors: http://www.nxp.com/rftransistors nxp rf power & base stations: http://www.nxp.com/rfpower nxp rf fets: http://www.nxp.com/rffets nxp rf catv electrical & optical: http://www.nxp.com/catv nxp rf applications: http://www.nxp.com/rf nxp application notes: http://www.nxp.com/technical-support-portal/50812/50961 nxp cross-references: http://www.nxp.com nxp packaging: http://www.nxp.com/package nxp end-of-life: http://www.nxp.com/products/eol nxp quality handbook: http://www.standardics.nxp.com/quality/handbook nxp literature: http://www.nxp.com/products/discretes/documentation nxp sales offices and distributors: http://www.nxp.com/profile/sales how to contact your authorized distributor or local nxp representative.
126 nxp semiconductors rf manual 16 th edition product index type portfolio chapter 1ps10sb82 3.2.4 1ps66sb17 3.2.4 1ps66sb82 3.2.4 1ps70sb82 3.2.4 1ps70sb84 3.2.4 1ps70sb85 3.2.4 1ps70sb86 3.2.4 1ps76sb17 3.2.4 1ps79sb17 3.2.4 1ps88sb82 3.2.4 ba277 3.2.3 ba591 3.2.3 ba891 3.2.3 bap1321-02 3.2.2 bap1321-03 3.2.2 bap1321-04 3.2.2 bap1321lx 3.2.2 bap142lx 3.2.2 bap50-02 3.2.2 bap50-03 3.2.2 bap50-04 3.2.2 bap50-04w 3.2.2 bap50-05 3.2.2 bap50-05w 3.2.2 bap50lx 3.2.2 bap51-02 3.2.2 bap51-03 3.2.2 bap51-04w 3.2.2 bap51-05w 3.2.2 bap51-06w 3.2.2 bap51l x 3.2.2 bap55lx 3.2.2 bap63-02 3.2.2 bap63-03 3.2.2 bap63-05w 3.2.2 bap63lx 3.2.2 bap64-02 3.2.2 bap64-03 3.2.2 bap64-04 3.2.2 bap64-04w 3.2.2 bap64-05 3.2.2 bap64-05w 3.2.2 bap64-06 3.2.2 bap64-06w 3.2.2 bap64lx 3.2.2 bap64q 3.2.2 bap65-02 3.2.2 bap65-03 3.2.2 bap65-05 3.2.2 bap65-05w 3.2.2 bap65lx 3.2.2 bap70-02 3.2.2 bap70-03 3.2.2 bap70-04w 3.2.2 bap70-05 3.2.2 bap70am 3.2.2 type portfolio chapter bap70q 3.2.2 bat17 3.2.4 bat18 3.2.3 bb131 3.2.1 bb135 3.2.1 bb145b 3.2.1 bb148 3.2.1 bb149 3.2.1 bb149a 3.2.1 bb152 3.2.1 bb153 3.2.1 bb156 3.2.1 bb178 3.2.1 bb178l x 3.2.1 bb179 3.2.1 bb179b 3.2.1 bb179blx 3.2.1 bb179l x 3.2.1 bb181 3.2.1 bb182 3.2.1 bb184 3.2.1 bb187 3.2.1 bb187lx 3.2.1 bb189 3.2.1 bb198 3.2.1 bb199 3.2.1 bb201 3.2.1 bb202 3.2.1 bb207 3.2.1 bb208-02 3.2.1 bb208-03 3.2.1 bby40 3.2.1 bf1102(r) 3.5.2 bf1105 3.5.2 bf1105r 3.5.2 bf1105 wr 3.5.2 bf1107 3.5.2 bf110 8 3.5.2 bf110 8r 3.5.2 bf110 8w 3.5.2 bf110 8wr 3.5.2 bf1118 3.5.2 bf1118r 3.5.2 bf1118w 3.5.2 bf1118wr 3.5.2 bf1201 3.5.2 bf1201r 3.5.2 bf1201wr 3.5.2 bf1202 3.5.2 bf1202r 3.5.2 bf1202wr 3.5.2 bf1203 3.5.2 bf1204 3.5.2 bf1206 3.5.2 bf1207 3.5.2 bf1208 3.5.2 type portfolio chapter bf1208d 3.5.2 bf1210 3.5.2 bf1211 3.5.2 bf1211r 3.5.2 bf1211wr 3.5.2 bf1212 3.5.2 bf1212r 3.5.2 bf1212wr 3.5.2 bf1214 3.5.2 bf1215 3.5.2 bf1216 3.5.2 bf1217 3.5.2 bf1218 3.5.2 bf510 3.5.1 bf511 3.5.1 bf512 3.5.1 bf513 3.5.1 bf545a 3.5.1 bf545b 3.5.1 bf545c 3.5.1 bf556a 3.5.1 bf556b 3.5.1 bf556c 3.5.1 bf861a 3.5.1 bf861b 3.5.1 bf861c 3.5.1 bf862 3.5.1 bf904a 3.5.2 bf904ar 3.5.2 bf904awr 3.5.2 bf908 3.5.2 bf908r 3.5.2 bf908wr 3.5.2 bf909a 3.5.2 bf909ar 3.5.2 bf909awr 3.5.2 bf991 3.5.2 bf992 3.5.2 bf994s 3.5.2 bf996s 3.5.2 bf998 3.5.2 bf998r 3.5.2 bf998wr 3.5.2 bfg10 3.3.1 bfg10/x 3.3.1 bfg10w/x 3.3.1 bfg135 3.3.1 bfg198 3.3.1 bfg21w 3.3.1 bfg25a/x 3.3.1 bfg25aw 3.3.1 bfg25aw/x 3.3.1 bfg31 3.3.1 bfg310/xr 3.3.1 bfg310w/xr 3.3.1 bfg325/xr 3.3.1 type portfolio chapter bfg325w/xr 3.3.1 bfg35 3.3.1 bfg403w 3.3.1 bfg410w 3.3.1 bfg424f 3.3.1 bfg424w 3.3.1 bfg425w 3.3.1 bfg480w 3.3.1 bfg505 3.3.1 bfg505/x 3.3.1 bfg505w 3.3.1 bfg505w/x 3.3.1 bfg505w/xr 3.3.1 bfg520 3.3.1 bfg520/x 3.3.1 bfg520/xr 3.3.1 bfg520w 3.3.1 bfg520w/x 3.3.1 bfg540 3.3.1 bfg540/x 3.3.1 bfg540/xr 3.3.1 bfg540w 3.3.1 bfg540w/x 3.3.1 bfg540w/xr 3.3.1 bfg541 3.3.1 bfg590 3.3.1 bfg590/x 3.3.1 bfg591 3.3.1 bfg67 3.3.1 bfg67/ x 3.3.1 bfg92a/x 3.3.1 bfg93a 3.3.1 bfg93a/x 3.3.1 bfg94 3.3.1 bfg97 3.3.1 bfm505 3.3.1 bfm520 3.3.1 bfm540 3.3.1 bfq149 3.3.1 bfq18a 3.3.1 bfq19 3.3.1 bfq591 3.3.1 bfq67 3.3.1 bfq67w 3.3.1 bfr106 3.3.1 bfr30 3.5.1 bfr31 3.5.1 bfr505 3.3.1 bfr505t 3.3.1 bfr520 3.3.1 bfr520t 3.3.1 bfr540 3.3.1 bfr92a 3.3.1 bfr92aw 3.3.1 bfr93a 3.3.1 bfr93ar 3.3.1 9. product index
127 nxp semiconductors rf manual 16 th edition product index type portfolio chapter bfr93aw 3.3.1 bfr94a 3.3.1 bfr94aw 3.3.1 bfs17 3.3.1 bfs17a 3.3.1 BFS17W 3.3.1 bfs25a 3.3.1 bfs505 3.3.1 bfs520 3.3.1 bfs540 3.3.1 bft25 3.3.1 bft25a 3.3.1 bf t4 6 3.5.1 bft92 3.3.1 bft92w 3.3.1 bft93 3.3.1 bft93w 3.3.1 bfu610f 3.3.1 bfu630f 3.3.1 bfu660f 3.3.1 bfu690f 3.3.1 bfu710f 3.3.1 bfu725f/n1 3.3.1 bfu730f 3.3.1 bfu730lx 3.3.1 bfu760f 3.3.1 bfu790f 3.3.1 bga2001 3.4.1 bga2002 3.4.1 bga2003 3.4.1 bga 2011 3.4.1 bga2012 3.4.1 bga2022 3.4.1 bga2031/1 3.4.1 bga2709 3.4.1 bga2712 3.4.1 bga2714 3.4.1 bga2715 3.4.1 bga2716 3.4.1 bga2717 3.4.1 bga2748 3.4.1 bga2776 3.4.1 bga2800 3.4.1 bga2801 3.4.1 bga2802 3.4.1 bga2803 3.4.1 bga2815 3.4.1 bga2817 3.4.1 bga2818 3.4.1 bga2819 3.4.1 bga2850 3.4.1 bga2851 3.4.1 bga2865 3.4.1 bga2866 3.4.1 bga2867 3.4.1 bga2868 3.4.1 bga2869 3.4.1 bga2870 3.4.1 bga2874 3.4.1 bga6101 3.4.1 type portfolio chapter bga6102 3.4.1 bga6104 3.4.1 bga6289 3.4.1 bga6489 3.4.1 bga6589 3.4.1 bga7014 3.4.1 bga7017 3.4.1 bga7020 3.4.1 bga7024 3.4.1 bga7027 3.4.1 bga7124 3.4.1 bga7127 3.4.1 bga7130 3.4.1 bga7204 3.4.1 bga7210 3.4.1 bga7350 3.4.1 bga7351 3.4.1 bgd712 3.6.3 bgd712c 3.6.3 bgd714 3.6.3 bgd812 3.6.3 bgd814 3.6.3 bgd816l 3.6.3 bge787b 3.6.1 bge788c 3.6.1 bge885 3.6.1 bgm1013 3.4.1 bgm1014 3.4.1 bgo807c 3.6.4 bgo807ce 3.6.4 bgr269 3.6.5 bgu6101 3.4.1 bgu6102 3.4.1 bgu6104 3.4.1 bgu7003 3.4.1 bgu7003w 3.4.1 bgu7004 3.4.1 bgu7005 3.4.1 bgu7007 3.4.1 bgu7008 3.4.1 bgu7031 3.4.1 bgu7032 3.4.1 bgu7033 3.4.1 bgu7041 3.4.1 bgu7042 3.4.1 bgu7044 3.4.1 bgu7045 3.4.1 bgu7051 3.4.1 bgu7052 3.4.1 bgu7053 3.4.1 bgu7060 3.4.1 bgu7061 3.4.1 bgu7062 3.4.1 bgu7063 3.4.1 bgu8006 3.4.1 bgu8007 3.4.1 bgx7100 3.4.2 bgx7101 3.4.2 bgx7220 3.4.2 bgx7221 3.4.2 type portfolio chapter bgx7300 3.4.2 bgx885n 3.6.1 bgy588c 3.6.1 bgy66b 3.6.5 bgy67 3.6.5 bgy67a 3.6.5 bgy68 3.6.5 bgy785a 3.6.1 bgy787 3.6.1 bgy835c 3.6.1 bgy885a 3.6.1 bgy887 3.6.1 bgy887b 3.6.1 bgy888 3.6.1 bl a0912-250r 3.7.3.1 bla1011-10 3.7.3.1 bl a1011-2 3.7.3.1 bl a1011-3 0 0 3.7.3.1 bla1011(s)-200r 3.7.3.1 bl a6g1011-20 0 r 3.7.3.1 bl a6g1011l s -20 0 rg 3.7.3.1 bla6h0912-500 3.7.3.1 bl a6h1011- 6 0 0 3.7.3.1 bld6g21l(s)-50 3 .7.1. 3 bld6g22l(s)-50 3 .7.1. 4 blf174xr(s) 3 .7. 2 blf178xr(s) 3 .7. 2 blf2425m6l(s)180p 3 .7. 2 blf2425m7l(s)140 3 .7. 2 blf2425m7l(s)200 3 .7. 2 blf2425m7l(s)250p 3 .7. 2 blf25m612(g) 3 .7. 2 blf369 3 .7. 2 .1 blf3g21-30 3 .7.1. 4 blf3g21-6 3 .7.1. 4 blf571 3 .7. 2 .1 blf572xr(s) 3 .7. 2 blf573(s) 3 .7. 2 .1 blf574 3 .7. 2 .1 blf574xr(s) 3 .7. 2 blf578 3 .7. 2 .1 blf578xr(s) 3 .7. 2 blf642 3.7.2.2 blf645 3 .7. 2 .1 blf647 3 .7. 2 .1 blf647p(s) 3 .7. 2 blf6g10(ls)-135rn 3.7.1.1 blf6g10(ls)-160rn 3.7.1.1 blf6g10(ls)-200rn 3.7.1.1 blf6g10(s)-45 3.7.1.1 blf6g10l-40brn 3.7.1.1 blf6g10l(s)-260prn 3.7.1.1 blf6g15l-250pbrn 3 .7.1. 2 blf6g15l-40brn 3 .7.1. 2 blf6g15l(s)-40rn 3 .7.1 blf6g20(ls)-110 3 .7.1. 3 blf6g20(ls)-180rn 3 .7.1. 3 blf6g20(ls)-75 3 .7.1. 3 blf6g20(s)-45 3 .7.1. 3 blf6g20ls-140 3 .7.1. 3 type portfolio chapter blf6g20s-230prn 3 .7.1. 3 blf6g21-10g 3 .7.1. 2 blf6g22(ls)-180pn 3 .7.1. 4 blf6g22(ls)-180rn 3 .7.1. 4 blf6g22(s)-45 3 .7.1. 4 blf6g22l-40bn 3 .7.1. 4 blf6g22l(s)-40p 3 .7.1. 4 blf6g22ls-10 0 3 .7.1. 4 blf6g22ls-130 3 .7.1. 4 blf6g22ls-75 3 .7.1. 4 blf6g27-10(g) 3 .7.1. 5 blf6g27(ls)-100 3.7.1.6 blf6g27(ls)-135 3.7.1.6 blf6g27(ls)-75 3.7.1.6 blf6g27(s)-45 3.7.1.6 blf6g27l(s)-40p 3.7.1.6 blf6g27l(s)-50bn 3.7.1.6 blf6g38-10(g) 3.7.1.7 blf6g38(ls)-100 3.7.1.7 blf6g38(ls)-50 3.7.1.7 blf6g38(s)-25 3.7.1.7 blf6h10l(s)-160 3 .7.1 blf7g10l(s)-250 3.7.1.1 blf7g15ls-20 0 3 .7.1. 2 blf7g15ls-30 0p 3 .7.1. 2 blf7g20l(s)-200 3 .7.1. 3 blf7g20l(s)-250p 3 .7.1. 3 blf7g20l(s)-90p 3 .7.1. 3 blf7g20ls-140p 3 .7.1. 3 blf7g20ls-260a 3 .7.1 blf7g21l(s)-160p 3 .7.1. 4 blf7g21ls-160 3 .7.1. 4 blf7g22l(s)-100p 3 .7.1. 4 blf7g22l(s)-130 3 .7.1. 4 blf7g22l(s)-160 3 .7.1. 4 blf7g22l(s)-200 3 .7.1. 4 blf7g22l(s)-250p 3 .7.1. 4 blf7g24l(s)-100 3 .7.1. 5 blf7g24l(s)-140 3 .7.1. 5 blf7g24l(s)-160p 3 .7.1 blf7g27l-200pb 3.7.1.6 blf7g27l(s)-100 3.7.1.6 blf7g27l(s)-140 3.7.1.6 blf7g27l(s)-150p 3.7.1.6 blf7g27l(s)-75p 3.7.1.6 blf7g27l(s)-90p 3.7.1.6 blf7g27ls-90pg 3 .7.1 blf861a 3 .7. 2 .1 blf871(s) 3 .7. 2 .1 blf878 3.7.2.2 blf879p 3.7.2.2 blf881(s) 3.7.2.2 blf884p(s) 3.7.2.2 blf888 3.7.2.2 blf888a(s) 3.7.2.2 blf888b(s) 3.7.2.2 blf8g10l(s)-160 3.7.1.1 blf8g10l(s)-160v 3 .7.1 blf8g10l(s)-300p 3 .7.1 blf8g10ls-200gv 3 .7.1
128 nxp semiconductors rf manual 16 th edition type portfolio chapter blf8g10ls-270gv 3 .7.1 blf8g10ls-400pgv 3 .7.1 blf8g20l(s)-200v 3 .7.1 blf8g20ls-270gv 3 .7.1 blf8g20ls-270pgv 3 .7.1 blf8g22ls-160bv 3 .7.1 blf8g22ls-200gv 3 .7.1 blf8g22ls-270gv 3 .7.1 blf8g22ls-400pgv 3 .7.1 blf8g24l(s)-200p 3 .7.1 blf8g27ls-140 3.7.1.6 blf8g27ls-140g 3 .7.1 blf8g27ls-140v 3 .7.1 blf8g27ls-200pgv 3 .7.1 blf8g27ls-280pgv 3 .7.1 bll1214-250r 3.7.3.2 bll1214-35 3.7.3.2 bll6g1214l-250 3.7.3.2 bll6g1214ls-250 3 .7. 3 bll6h0514-25 3.7.3.2 bll6h0514l(s)-130 3.7.3.2 bll6h1214(ls)-500 3.7.3.2 bll6h1214l(s)-250 3.7.3.2 bll6h1214ls-500 3 .7. 3 blm6g10 -30(g) 3.7.1.1 blm6g22-30(g) 3 .7.1. 4 blm7g22s-60pb(g) 3 .7.1 blp7g07s-140p(g) 3 .7.1 blp7g09s-140p(g) 3 .7.1 blp7g22-10 3 .7.1 blp7g22-10* 3 .7.1. 4 bls2933-100 3.7.3.3 bls6g2731-6g 3.7.3.3 bls6g2731(s)-120 3.7.3.3 bls6g2731s-130 3.7.3.3 bls6g2735l(s)-30 3 .7. 3 bls6g2933s-130 3.7.3.3 bls6g3135(s)-120 3.7.3.3 bls6g3135(s)-20 3.7.3.3 bls7g2325l-105 3.7.3.3 bls7g2729l(s)-350p 3 .7. 3 bls7g2933s-150 3.7.3.3 bls7g3135l(s)-350p 3 .7. 3 blt50 3.3.1 blt70 3.3.1 type portfolio chapter blt80 3.3.1 blt81 3.3.1 blu6h0410l(s)-600p 3 .7. 3 bsr56 3.5.1 bsr57 3.5.1 bsr58 3.5.1 bss83 3.5.2 cgd1040hi 3.6.3 cgd1042h 3.6.3 cgd1042hi 3.6.3 cgd1044h 3.6.3 cgd1044hi 3.6.3 cgd1046hi 3.6.3 cgd942c 3.6.3 cgd944c 3.6.3 cgd982hci 3.6.3 cgd985hci 3.6.3 cgd987hci 3.6.3 cgy1032 3.6.2 cgy1041 3.6.2 cgy1043 3.6.2 cgy1047 3.6.2 cgy1049 3.6.2 cgy1085a 3.6.2 cgy888c 3.6.1 clf1g0035-100 3 .7. 4 clf1g0035-50 3 .7. 4 clf1g0060-10 3 .7. 4 clf1g0060-30 3 .7. 4 jennet 3.8 jennet-ip 3.8 jn5142-001 3.8 jn5142-j01 3.8 jn5148-001 3.8 jn5148-001-m00 3.8 jn5148-001-m03 3.8 jn5148-001-m04 3.8 jn5148-j01 3.8 jn5148-z01 3.8 pbr941 3.3.1 pbr951 3.3.1 pmbd353 3.2.4 pmbd354 3.2.4 pmbf4391 3.5.1 pmbf4392 3.5.1 type portfolio chapter pmbf4393 3.5.1 pmbfj108 3.5.1 pmbfj109 3.5.1 pmbfj110 3.5.1 pmbfj111 3.5.1 pmbfj112 3.5.1 pmbfj113 3.5.1 pmbfj174 3.5.1 pmbfj175 3.5.1 pmbfj176 3.5.1 pmbfj177 3.5.1 pmbfj308 3.5.1 pmbfj309 3.5.1 pmbfj310 3.5.1 pmbfj620 3.5.1 prf947 3.3.1 prf949 3.3.1 prf957 3.3.1 tff1003hn 3.4.4 tff1007hn 3.4.4 tff1014hn 3.4.3 tff1015hn 3.4.3 tff1017hn 3.4.3 tff11070hn 3.4.4 tff11073hn 3.4.4 tff11077hn 3.4.4 tff11080hn 3.4.4 tff110 8 4hn 3.4.4 tff110 8 8hn 3.4.4 tff110 92hn 3.4.4 tff110 94hn 3.4.4 tff11096hn 3.4.4 tff11101hn 3.4.4 tff11105hn 3.4.4 tff11110 hn 3.4.4 tff11115hn 3.4.4 tff11121hn 3.4.4 tff11126hn 3.4.4 tff11132hn 3.4.4 tff11139hn 3.4.4 tff11145hn 3.4.4 tff11152hn 3.4.4 zigbee pro 3.8
129 nxp semiconductors rf manual 16 th edition notes
130 nxp semiconductors rf manual 16 th edition notes
www.nxp.com date of release: june 2012 document order number: 9397 750 1 7272 printed in the netherlands ? 2012 nxp b.v. all rights reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 53520-1205-1011 www.climatepartner.com

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